Abstract

We analytically characterize the temperature dependence of Raman amplification, Raman attenuation, and parametric Raman wavelength conversion (PRWC) in submicrometer silicon waveguides (WGs) over the temperature range of 100 to 500K, near the O-band and C-band wavelengths of 1.33 and 1.55μm. The efficiencies of Raman amplification/attenuation and PRWC are studied in the context of how the interplay among the Raman gain, two-photon absorption, free-carrier absorption, sidewall roughness, pump-signal-input intensity ratio, and phase matching condition influences the wave propagation in the submicrometer WG at different temperatures. Our results show that the effects of temperature variation can be harnessed to enhance and tune the Raman amplification/attenuation and PRWC. This offers a more dynamic control of the Raman performances of submicrometer silicon WG devices as compared to conventional silicon Raman WG devices operating at a fixed (room) temperature.

© 2011 Optical Society of America

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