Erbium-doped aluminum oxide integrated optical amplifiers were fabricated on silicon substrates, and their characteristics were investigated for Er concentrations ranging from . Background losses below at were measured. For optimum Er concentrations in the range of , an internal net gain was obtained over a wavelength range of , and a peak gain of was measured at . The broadband and high peak gain are attributed to an optimized fabrication process, improved waveguide design, and pumping at as opposed to . In a -long amplifier, a total internal net gain of up to was measured. By use of a rate-equation model, an internal net gain of at the gain peak and more than for all wavelengths within the telecom C-band are predicted for a launched signal power of when launching of pump power into a -long amplifier. The high optical gain demonstrates that is a competitive technology for active integrated optics.
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