Abstract

Some research groups have realized green laser diodes (LDs) using InGaN-based nitride semiconductors. However, the performances of their devices, in particular wall-plug efficiency, were still one digit lower than those of established red and blue semiconductor LDs. To achieve high-performance green LDs and apply them to LD displays or micro-projectors, the field should focus on improving the internal quantum efficiency (IQE) of green spontaneous emission from InGaN quantum wells (QWs). Green InGaN QWs have completely different features than blue InGaN QWs in terms of growth and concomitant material quality. The exploration of 100% IQE-quality InGaN materials for green emission continues.

© 2010 Optical Society of America

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2010 (5)

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High quality InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Lett. 96, 231912-1–231912-3 (2010).
[CrossRef]

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

2009 (16)

M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, “New developments in green LEDs,” Phys. Status Solidi A 206, 1125–1129 (2009).
[CrossRef]

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm,” Appl. Phys. Lett. 94, 071105-1–071105-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of InGaN∕GaN Laser Diodes on Semipolar (11–22) Plane Gallium Nitrides,” Appl. Phys. Express 2, 021002-1–021002-3 (2009).
[CrossRef]

D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. Zah, “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” Appl. Phys. Express 2, 071001-1–071001-3 (2009).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

S. Nakamura and M. Riorden, “The Dawn of the Miniature Green Lasers,” Scientific American April 2009, 70–75 (2009).
[CrossRef]

T. Miyoshi, S. Takeshi, T. Yamamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201-1–062201-3 (2009).
[CrossRef]

J. S. Speck and S. F. Chichibu, “Nonpolar and semipolar group III nitride-based materials,” MRS Bull. 34, 304–309 (2009).
[CrossRef]

H. Ohta and K. Okamoto, “Nonpolar/semipolar GaN technology for violet, blue, and green laser diodes,” MRS Bull. 34, 324–327 (2009).
[CrossRef]

A. Michiue, T. Miyoshi, T. Yamamoto, T. Kozaki, S. Nagahama, Y. Narukawa, T. Yamada, and T. Mukai, “Recent development of nitride LEDs and LDs,” Proc. SPIE 7216, 72161Z-1–72161Z-6 (2009).
[CrossRef]

T. Kamikawa, Y. Kawaguchi, P. O. Vaccaro, S. Ito, and H. Kawanishi, “Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage,” Appl. Phys. Lett. 95, 031106-1–031106-3 (2009).
[CrossRef]

K. Fujito, S. Kubo, and I. Fujimura, “Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE,” MRS Bull. 34, 313–317 (2009).
[CrossRef]

2008 (7)

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 011102-1–011102-3 (2008).
[CrossRef]

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

K. Okamoto, T. Tanaka, and M. Kubota, “High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 072201-1–072201-3 (2008).
[CrossRef]

H. K. Nguyen, M. H. Hu, Y. Li, K. Song, N. J. Visovsky, S. Coleman, and C.-E. Zah, “304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode,” Proc. SPIE 6890, 68900I-1–68900I-6 (2008).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 426 nmInGaN∕GaN Laser Diodes Fabricated on Free-Standing Semipolar (11–22) Gallium Nitride Substrates,” Appl. Phys. Express 1, 091102-1–091102-3 (2008).
[CrossRef]

T. Onuma, K. Okatomo, H. Ohta, and S. F. Chichibu, “Anisotropic optical gain in m-plane InxGa1−xN∕GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates,” Appl. Phys. Lett. 93, 091112-1–091112-3 (2008).
[CrossRef]

2007 (3)

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, “Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes,” Jpn. J. Appl. Phys. 46, L187–L189 (2007).
[CrossRef]

K. Okamoto, T. Tanaka, M. Kubota, and H. Ohta, “Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers,” Jpn. J. Appl. Phys. 46, L820–L822 (2007).
[CrossRef]

2006 (2)

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, Green, and Amber InGaN∕GaN Light-Emitting Diodes on Semipolar {11–22} GaN Bulk Substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[CrossRef]

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-Free m-Plane InGaN∕GaN Light-Emitting Diodes on m-Plane GaN Single Crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[CrossRef]

2005 (1)

D. Imanishi, Y. Sato, K. Naganuma, S. Ito, and S. Hirata, “7 W operation of 644 nm wavelength laser diode arrays with index-guided structure,” Electron. Lett. 41, 1172–1173 (2005).
[CrossRef]

1997 (1)

P. Smowton and P. Blood, “The differential efficiency of quantum-well lasers,” IEEE J. Sel. Top. Quantum Electron. 3, pp. 491–498 (1997).
[CrossRef]

1996 (1)

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,” Jpn. J. Appl. Phys. 35, L74–L76 (1996).
[CrossRef]

Adachi, M.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Akita, K.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Asamizu, H.

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of InGaN∕GaN Laser Diodes on Semipolar (11–22) Plane Gallium Nitrides,” Appl. Phys. Express 2, 021002-1–021002-3 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 426 nmInGaN∕GaN Laser Diodes Fabricated on Free-Standing Semipolar (11–22) Gallium Nitride Substrates,” Appl. Phys. Express 1, 091102-1–091102-3 (2008).
[CrossRef]

Avramescu, A.

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

Baur, J.

M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, “New developments in green LEDs,” Phys. Status Solidi A 206, 1125–1129 (2009).
[CrossRef]

Bergbauer, W.

M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, “New developments in green LEDs,” Phys. Status Solidi A 206, 1125–1129 (2009).
[CrossRef]

Bhat, R.

D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. Zah, “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” Appl. Phys. Express 2, 071001-1–071001-3 (2009).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

Blood, P.

P. Smowton and P. Blood, “The differential efficiency of quantum-well lasers,” IEEE J. Sel. Top. Quantum Electron. 3, pp. 491–498 (1997).
[CrossRef]

Breidenassel, A.

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

Bruederl, G.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

Chakraborty, A.

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High quality InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Lett. 96, 231912-1–231912-3 (2010).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

Chang, Y.-C.

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Chichibu, S. F.

J. S. Speck and S. F. Chichibu, “Nonpolar and semipolar group III nitride-based materials,” MRS Bull. 34, 304–309 (2009).
[CrossRef]

T. Onuma, K. Okatomo, H. Ohta, and S. F. Chichibu, “Anisotropic optical gain in m-plane InxGa1−xN∕GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates,” Appl. Phys. Lett. 93, 091112-1–091112-3 (2008).
[CrossRef]

K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, “Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes,” Jpn. J. Appl. Phys. 46, L187–L189 (2007).
[CrossRef]

Chuang, S. L.

S. L. Chuang, Physics of Optoelectronic Devices (Wiley, 1995).

Cohen, D. A.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

Coleman, S.

H. K. Nguyen, M. H. Hu, Y. Li, K. Song, N. J. Visovsky, S. Coleman, and C.-E. Zah, “304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode,” Proc. SPIE 6890, 68900I-1–68900I-6 (2008).
[CrossRef]

Craig, R.

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

DenBaars, S. P.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High quality InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Lett. 96, 231912-1–231912-3 (2010).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of InGaN∕GaN Laser Diodes on Semipolar (11–22) Plane Gallium Nitrides,” Appl. Phys. Express 2, 021002-1–021002-3 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 426 nmInGaN∕GaN Laser Diodes Fabricated on Free-Standing Semipolar (11–22) Gallium Nitride Substrates,” Appl. Phys. Express 1, 091102-1–091102-3 (2008).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Dini, D.

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

Eichler, C.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

Enya, Y.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Farrell, R. M.

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

Farrell1, R. M.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

Fasol, G.

S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story, 2nd edition (Springer, 2000).

Feezell, D. F.

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Fujimura, I.

K. Fujito, S. Kubo, and I. Fujimura, “Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE,” MRS Bull. 34, 313–317 (2009).
[CrossRef]

Fujishiro, Y.

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Fujito, K.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of InGaN∕GaN Laser Diodes on Semipolar (11–22) Plane Gallium Nitrides,” Appl. Phys. Express 2, 021002-1–021002-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

K. Fujito, S. Kubo, and I. Fujimura, “Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE,” MRS Bull. 34, 313–317 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 426 nmInGaN∕GaN Laser Diodes Fabricated on Free-Standing Semipolar (11–22) Gallium Nitride Substrates,” Appl. Phys. Express 1, 091102-1–091102-3 (2008).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

Funato, M.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, Green, and Amber InGaN∕GaN Light-Emitting Diodes on Semipolar {11–22} GaN Bulk Substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[CrossRef]

Gallinat, C.

D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. Zah, “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” Appl. Phys. Express 2, 071001-1–071001-3 (2009).
[CrossRef]

Haeger, D. A.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Hahn, B.

M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, “New developments in green LEDs,” Phys. Status Solidi A 206, 1125–1129 (2009).
[CrossRef]

Hall, E. M.

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Hardy, M. T.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Hirano, Y.

Y. Hirano, T. Sasagawa, T. Yanagisawa, S. Yamamoto, A. Nakamura, T. Yagi, and H. Sugiura, “Solid-State SHG Green Laser for Laser TV,” in International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper PThA3.

Hirata, S.

D. Imanishi, Y. Sato, K. Naganuma, S. Ito, and S. Hirata, “7 W operation of 644 nm wavelength laser diode arrays with index-guided structure,” Electron. Lett. 41, 1172–1173 (2005).
[CrossRef]

Hirukawa, S.

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Holder, C.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

Hsiung, C. L.

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

Hsu, P. S.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Hu, M. H.

H. K. Nguyen, M. H. Hu, Y. Li, K. Song, N. J. Visovsky, S. Coleman, and C.-E. Zah, “304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode,” Proc. SPIE 6890, 68900I-1–68900I-6 (2008).
[CrossRef]

Huang, C. Y.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

Ichihara, J.

K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, “Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes,” Jpn. J. Appl. Phys. 46, L187–L189 (2007).
[CrossRef]

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-Free m-Plane InGaN∕GaN Light-Emitting Diodes on m-Plane GaN Single Crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[CrossRef]

Ikegami, T.

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Imanishi, D.

D. Imanishi, Y. Sato, K. Naganuma, S. Ito, and S. Hirata, “7 W operation of 644 nm wavelength laser diode arrays with index-guided structure,” Electron. Lett. 41, 1172–1173 (2005).
[CrossRef]

Ito, S.

T. Kamikawa, Y. Kawaguchi, P. O. Vaccaro, S. Ito, and H. Kawanishi, “Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage,” Appl. Phys. Lett. 95, 031106-1–031106-3 (2009).
[CrossRef]

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

D. Imanishi, Y. Sato, K. Naganuma, S. Ito, and S. Hirata, “7 W operation of 644 nm wavelength laser diode arrays with index-guided structure,” Electron. Lett. 41, 1172–1173 (2005).
[CrossRef]

Iwasa, N.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,” Jpn. J. Appl. Phys. 35, L74–L76 (1996).
[CrossRef]

Kamikawa, T.

T. Kamikawa, Y. Kawaguchi, P. O. Vaccaro, S. Ito, and H. Kawanishi, “Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage,” Appl. Phys. Lett. 95, 031106-1–031106-3 (2009).
[CrossRef]

Kashiwagi, J.

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm,” Appl. Phys. Lett. 94, 071105-1–071105-3 (2009).
[CrossRef]

Katayama, K.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Kawaguchi, Y.

T. Kamikawa, Y. Kawaguchi, P. O. Vaccaro, S. Ito, and H. Kawanishi, “Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage,” Appl. Phys. Lett. 95, 031106-1–031106-3 (2009).
[CrossRef]

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Kawakami, Y.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, Green, and Amber InGaN∕GaN Light-Emitting Diodes on Semipolar {11–22} GaN Bulk Substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[CrossRef]

Kawanishi, H.

T. Kamikawa, Y. Kawaguchi, P. O. Vaccaro, S. Ito, and H. Kawanishi, “Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage,” Appl. Phys. Lett. 95, 031106-1–031106-3 (2009).
[CrossRef]

Kebort, D.

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Kelchner, K. M.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Kim, K. C.

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

Kiyoku, H.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,” Jpn. J. Appl. Phys. 35, L74–L76 (1996).
[CrossRef]

Kosugi, T.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, Green, and Amber InGaN∕GaN Light-Emitting Diodes on Semipolar {11–22} GaN Bulk Substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[CrossRef]

Kozaki, T.

T. Miyoshi, S. Takeshi, T. Yamamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201-1–062201-3 (2009).
[CrossRef]

A. Michiue, T. Miyoshi, T. Yamamoto, T. Kozaki, S. Nagahama, Y. Narukawa, T. Yamada, and T. Mukai, “Recent development of nitride LEDs and LDs,” Proc. SPIE 7216, 72161Z-1–72161Z-6 (2009).
[CrossRef]

Kubo, S.

K. Fujito, S. Kubo, and I. Fujimura, “Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE,” MRS Bull. 34, 313–317 (2009).
[CrossRef]

Kubota, M.

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm,” Appl. Phys. Lett. 94, 071105-1–071105-3 (2009).
[CrossRef]

K. Okamoto, T. Tanaka, and M. Kubota, “High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 072201-1–072201-3 (2008).
[CrossRef]

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 011102-1–011102-3 (2008).
[CrossRef]

K. Okamoto, T. Tanaka, M. Kubota, and H. Ohta, “Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers,” Jpn. J. Appl. Phys. 46, L820–L822 (2007).
[CrossRef]

Kuo, H. C.

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Kyono, T.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Laubsch, A.

M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, “New developments in green LEDs,” Phys. Status Solidi A 206, 1125–1129 (2009).
[CrossRef]

Lermer, T.

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

Li, Y.

H. K. Nguyen, M. H. Hu, Y. Li, K. Song, N. J. Visovsky, S. Coleman, and C.-E. Zah, “304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode,” Proc. SPIE 6890, 68900I-1–68900I-6 (2008).
[CrossRef]

Lin, Y. D.

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High quality InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Lett. 96, 231912-1–231912-3 (2010).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

Lin, Y.-D.

Y.-D. Lin, Ph.D dissertation (University of California, Santa Barabara, 2010).

Lutgen, S.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

Matsushita, T.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,” Jpn. J. Appl. Phys. 35, L74–L76 (1996).
[CrossRef]

Meyer, T.

M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, “New developments in green LEDs,” Phys. Status Solidi A 206, 1125–1129 (2009).
[CrossRef]

Michiue, A.

A. Michiue, T. Miyoshi, T. Yamamoto, T. Kozaki, S. Nagahama, Y. Narukawa, T. Yamada, and T. Mukai, “Recent development of nitride LEDs and LDs,” Proc. SPIE 7216, 72161Z-1–72161Z-6 (2009).
[CrossRef]

Miyoshi, T.

A. Michiue, T. Miyoshi, T. Yamamoto, T. Kozaki, S. Nagahama, Y. Narukawa, T. Yamada, and T. Mukai, “Recent development of nitride LEDs and LDs,” Proc. SPIE 7216, 72161Z-1–72161Z-6 (2009).
[CrossRef]

T. Miyoshi, S. Takeshi, T. Yamamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201-1–062201-3 (2009).
[CrossRef]

Mukai, T.

A. Michiue, T. Miyoshi, T. Yamamoto, T. Kozaki, S. Nagahama, Y. Narukawa, T. Yamada, and T. Mukai, “Recent development of nitride LEDs and LDs,” Proc. SPIE 7216, 72161Z-1–72161Z-6 (2009).
[CrossRef]

T. Miyoshi, S. Takeshi, T. Yamamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201-1–062201-3 (2009).
[CrossRef]

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, Green, and Amber InGaN∕GaN Light-Emitting Diodes on Semipolar {11–22} GaN Bulk Substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[CrossRef]

Müller, J.

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

Nagahama, S.

T. Miyoshi, S. Takeshi, T. Yamamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201-1–062201-3 (2009).
[CrossRef]

A. Michiue, T. Miyoshi, T. Yamamoto, T. Kozaki, S. Nagahama, Y. Narukawa, T. Yamada, and T. Mukai, “Recent development of nitride LEDs and LDs,” Proc. SPIE 7216, 72161Z-1–72161Z-6 (2009).
[CrossRef]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,” Jpn. J. Appl. Phys. 35, L74–L76 (1996).
[CrossRef]

Naganuma, K.

D. Imanishi, Y. Sato, K. Naganuma, S. Ito, and S. Hirata, “7 W operation of 644 nm wavelength laser diode arrays with index-guided structure,” Electron. Lett. 41, 1172–1173 (2005).
[CrossRef]

Nakagawa, D.

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-Free m-Plane InGaN∕GaN Light-Emitting Diodes on m-Plane GaN Single Crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[CrossRef]

Nakamura, A.

Y. Hirano, T. Sasagawa, T. Yanagisawa, S. Yamamoto, A. Nakamura, T. Yagi, and H. Sugiura, “Solid-State SHG Green Laser for Laser TV,” in International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper PThA3.

Nakamura, S.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High quality InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Lett. 96, 231912-1–231912-3 (2010).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of InGaN∕GaN Laser Diodes on Semipolar (11–22) Plane Gallium Nitrides,” Appl. Phys. Express 2, 021002-1–021002-3 (2009).
[CrossRef]

S. Nakamura and M. Riorden, “The Dawn of the Miniature Green Lasers,” Scientific American April 2009, 70–75 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 426 nmInGaN∕GaN Laser Diodes Fabricated on Free-Standing Semipolar (11–22) Gallium Nitride Substrates,” Appl. Phys. Express 1, 091102-1–091102-3 (2008).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,” Jpn. J. Appl. Phys. 35, L74–L76 (1996).
[CrossRef]

S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story, 2nd edition (Springer, 2000).

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Nakamura, T.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Napierala, J.

D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. Zah, “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” Appl. Phys. Express 2, 071001-1–071001-3 (2009).
[CrossRef]

Narukawa, Y.

A. Michiue, T. Miyoshi, T. Yamamoto, T. Kozaki, S. Nagahama, Y. Narukawa, T. Yamada, and T. Mukai, “Recent development of nitride LEDs and LDs,” Proc. SPIE 7216, 72161Z-1–72161Z-6 (2009).
[CrossRef]

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, Green, and Amber InGaN∕GaN Light-Emitting Diodes on Semipolar {11–22} GaN Bulk Substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[CrossRef]

Nguyen, H. K.

H. K. Nguyen, M. H. Hu, Y. Li, K. Song, N. J. Visovsky, S. Coleman, and C.-E. Zah, “304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode,” Proc. SPIE 6890, 68900I-1–68900I-6 (2008).
[CrossRef]

Ohta, H.

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High quality InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Lett. 96, 231912-1–231912-3 (2010).
[CrossRef]

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

H. Ohta and K. Okamoto, “Nonpolar/semipolar GaN technology for violet, blue, and green laser diodes,” MRS Bull. 34, 324–327 (2009).
[CrossRef]

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 011102-1–011102-3 (2008).
[CrossRef]

T. Onuma, K. Okatomo, H. Ohta, and S. F. Chichibu, “Anisotropic optical gain in m-plane InxGa1−xN∕GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates,” Appl. Phys. Lett. 93, 091112-1–091112-3 (2008).
[CrossRef]

K. Okamoto, T. Tanaka, M. Kubota, and H. Ohta, “Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers,” Jpn. J. Appl. Phys. 46, L820–L822 (2007).
[CrossRef]

K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, “Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes,” Jpn. J. Appl. Phys. 46, L187–L189 (2007).
[CrossRef]

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-Free m-Plane InGaN∕GaN Light-Emitting Diodes on m-Plane GaN Single Crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[CrossRef]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

Ohta, M.

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Okamoto, K.

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm,” Appl. Phys. Lett. 94, 071105-1–071105-3 (2009).
[CrossRef]

H. Ohta and K. Okamoto, “Nonpolar/semipolar GaN technology for violet, blue, and green laser diodes,” MRS Bull. 34, 324–327 (2009).
[CrossRef]

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 011102-1–011102-3 (2008).
[CrossRef]

K. Okamoto, T. Tanaka, and M. Kubota, “High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 072201-1–072201-3 (2008).
[CrossRef]

K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, “Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes,” Jpn. J. Appl. Phys. 46, L187–L189 (2007).
[CrossRef]

K. Okamoto, T. Tanaka, M. Kubota, and H. Ohta, “Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers,” Jpn. J. Appl. Phys. 46, L820–L822 (2007).
[CrossRef]

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-Free m-Plane InGaN∕GaN Light-Emitting Diodes on m-Plane GaN Single Crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[CrossRef]

Okatomo, K.

T. Onuma, K. Okatomo, H. Ohta, and S. F. Chichibu, “Anisotropic optical gain in m-plane InxGa1−xN∕GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates,” Appl. Phys. Lett. 93, 091112-1–091112-3 (2008).
[CrossRef]

Onuma, T.

T. Onuma, K. Okatomo, H. Ohta, and S. F. Chichibu, “Anisotropic optical gain in m-plane InxGa1−xN∕GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates,” Appl. Phys. Lett. 93, 091112-1–091112-3 (2008).
[CrossRef]

Pearton, S.

S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story, 2nd edition (Springer, 2000).

Peter, M.

M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, “New developments in green LEDs,” Phys. Status Solidi A 206, 1125–1129 (2009).
[CrossRef]

Pfister, N.

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Poblenz, C.

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Queren, D.

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

Raring, J. W.

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Riorden, M.

S. Nakamura and M. Riorden, “The Dawn of the Miniature Green Lasers,” Scientific American April 2009, 70–75 (2009).
[CrossRef]

Sabathil, M.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, “New developments in green LEDs,” Phys. Status Solidi A 206, 1125–1129 (2009).
[CrossRef]

Saito, M.

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of InGaN∕GaN Laser Diodes on Semipolar (11–22) Plane Gallium Nitrides,” Appl. Phys. Express 2, 021002-1–021002-3 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 426 nmInGaN∕GaN Laser Diodes Fabricated on Free-Standing Semipolar (11–22) Gallium Nitride Substrates,” Appl. Phys. Express 1, 091102-1–091102-3 (2008).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

Sasagawa, T.

Y. Hirano, T. Sasagawa, T. Yanagisawa, S. Yamamoto, A. Nakamura, T. Yagi, and H. Sugiura, “Solid-State SHG Green Laser for Laser TV,” in International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper PThA3.

Sato, Y.

D. Imanishi, Y. Sato, K. Naganuma, S. Ito, and S. Hirata, “7 W operation of 644 nm wavelength laser diode arrays with index-guided structure,” Electron. Lett. 41, 1172–1173 (2005).
[CrossRef]

Schillgalies, M.

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

Schmidt, M. C.

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Senoh, M.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,” Jpn. J. Appl. Phys. 35, L74–L76 (1996).
[CrossRef]

Sizov, D. S.

D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. Zah, “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” Appl. Phys. Express 2, 071001-1–071001-3 (2009).
[CrossRef]

Smowton, P.

P. Smowton and P. Blood, “The differential efficiency of quantum-well lasers,” IEEE J. Sel. Top. Quantum Electron. 3, pp. 491–498 (1997).
[CrossRef]

Song, K.

D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. Zah, “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” Appl. Phys. Express 2, 071001-1–071001-3 (2009).
[CrossRef]

H. K. Nguyen, M. H. Hu, Y. Li, K. Song, N. J. Visovsky, S. Coleman, and C.-E. Zah, “304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode,” Proc. SPIE 6890, 68900I-1–68900I-6 (2008).
[CrossRef]

Sonobe, M.

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-Free m-Plane InGaN∕GaN Light-Emitting Diodes on m-Plane GaN Single Crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[CrossRef]

Speck, J. S.

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High quality InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Lett. 96, 231912-1–231912-3 (2010).
[CrossRef]

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of InGaN∕GaN Laser Diodes on Semipolar (11–22) Plane Gallium Nitrides,” Appl. Phys. Express 2, 021002-1–021002-3 (2009).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

J. S. Speck and S. F. Chichibu, “Nonpolar and semipolar group III nitride-based materials,” MRS Bull. 34, 304–309 (2009).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 426 nmInGaN∕GaN Laser Diodes Fabricated on Free-Standing Semipolar (11–22) Gallium Nitride Substrates,” Appl. Phys. Express 1, 091102-1–091102-3 (2008).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN∕GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L190–L191 (2007).
[CrossRef]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

Strauss, U.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

S. Lutgen, A. Avramescu, T. Lermer, M. Schillgalies, D. Queren, J. Müller, D. Dini, A. Breidenassel, and U. Strauss, “True green InGaN laser diodes,” Phys. Status Solidi A 207, 1318–1322 (2010).
[CrossRef]

Sugimoto, Y.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,” Jpn. J. Appl. Phys. 35, L74–L76 (1996).
[CrossRef]

Sugiura, H.

Y. Hirano, T. Sasagawa, T. Yanagisawa, S. Yamamoto, A. Nakamura, T. Yagi, and H. Sugiura, “Solid-State SHG Green Laser for Laser TV,” in International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper PThA3.

Sumitomo, T.

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Takahashi, M.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, Green, and Amber InGaN∕GaN Light-Emitting Diodes on Semipolar {11–22} GaN Bulk Substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[CrossRef]

Takahira, Y.

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Takakura, T.

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Takasu, H.

K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, “Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes,” Jpn. J. Appl. Phys. 46, L187–L189 (2007).
[CrossRef]

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-Free m-Plane InGaN∕GaN Light-Emitting Diodes on m-Plane GaN Single Crystals,” Jpn. J. Appl. Phys. 45, L1197–L1199 (2006).
[CrossRef]

Takeshi, S.

T. Miyoshi, S. Takeshi, T. Yamamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201-1–062201-3 (2009).
[CrossRef]

Tanaka, T.

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm,” Appl. Phys. Lett. 94, 071105-1–071105-3 (2009).
[CrossRef]

K. Okamoto, T. Tanaka, and M. Kubota, “High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 072201-1–072201-3 (2008).
[CrossRef]

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 011102-1–011102-3 (2008).
[CrossRef]

K. Okamoto, T. Tanaka, M. Kubota, and H. Ohta, “Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers,” Jpn. J. Appl. Phys. 46, L820–L822 (2007).
[CrossRef]

Tokuyama, S.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Tsuda, Y.

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Tyagi, A.

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

Ueda, M.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, Green, and Amber InGaN∕GaN Light-Emitting Diodes on Semipolar {11–22} GaN Bulk Substrates,” Jpn. J. Appl. Phys. 45, L659–L662 (2006).
[CrossRef]

Ueno, M.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Ueta, Y.

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Vaccaro, P. O.

T. Kamikawa, Y. Kawaguchi, P. O. Vaccaro, S. Ito, and H. Kawanishi, “Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage,” Appl. Phys. Lett. 95, 031106-1–031106-3 (2009).
[CrossRef]

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Visovsky, N. J.

H. K. Nguyen, M. H. Hu, Y. Li, K. Song, N. J. Visovsky, S. Coleman, and C.-E. Zah, “304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode,” Proc. SPIE 6890, 68900I-1–68900I-6 (2008).
[CrossRef]

Wu, F.

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High quality InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Lett. 96, 231912-1–231912-3 (2010).
[CrossRef]

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

Yagi, T.

Y. Hirano, T. Sasagawa, T. Yanagisawa, S. Yamamoto, A. Nakamura, T. Yagi, and H. Sugiura, “Solid-State SHG Green Laser for Laser TV,” in International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper PThA3.

Yamada, T.

A. Michiue, T. Miyoshi, T. Yamamoto, T. Kozaki, S. Nagahama, Y. Narukawa, T. Yamada, and T. Mukai, “Recent development of nitride LEDs and LDs,” Proc. SPIE 7216, 72161Z-1–72161Z-6 (2009).
[CrossRef]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,” Jpn. J. Appl. Phys. 35, L74–L76 (1996).
[CrossRef]

Yamamoto, S.

Y. Hirano, T. Sasagawa, T. Yanagisawa, S. Yamamoto, A. Nakamura, T. Yagi, and H. Sugiura, “Solid-State SHG Green Laser for Laser TV,” in International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper PThA3.

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

Yamamoto, T.

A. Michiue, T. Miyoshi, T. Yamamoto, T. Kozaki, S. Nagahama, Y. Narukawa, T. Yamada, and T. Mukai, “Recent development of nitride LEDs and LDs,” Proc. SPIE 7216, 72161Z-1–72161Z-6 (2009).
[CrossRef]

T. Miyoshi, S. Takeshi, T. Yamamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201-1–062201-3 (2009).
[CrossRef]

Yanagisawa, T.

Y. Hirano, T. Sasagawa, T. Yanagisawa, S. Yamamoto, A. Nakamura, T. Yagi, and H. Sugiura, “Solid-State SHG Green Laser for Laser TV,” in International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper PThA3.

Yoshizumi, Y.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Young, E. C.

A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11–22) GaN free standing substrates,” Appl. Phys. Lett. 95, 251905-1–251905-3 (2009).
[CrossRef]

Yuasa, T.

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

Zah, C.

D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. Zah, “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” Appl. Phys. Express 2, 071001-1–071001-3 (2009).
[CrossRef]

Zah, C.-E.

H. K. Nguyen, M. H. Hu, Y. Li, K. Song, N. J. Visovsky, S. Coleman, and C.-E. Zah, “304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode,” Proc. SPIE 6890, 68900I-1–68900I-6 (2008).
[CrossRef]

Appl. Phys. Express (15)

T. Miyoshi, S. Takeshi, T. Yamamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201-1–062201-3 (2009).
[CrossRef]

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3, 061003-1–061003-3 (2010).
[CrossRef]

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 011102-1–011102-3 (2008).
[CrossRef]

Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa, “Blue Laser Diodes Fabricated on m-Plane GaN Substrates,” Appl. Phys. Express 1, 011104-1–011104-3 (2008).
[CrossRef]

K. Okamoto, T. Tanaka, and M. Kubota, “High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1, 072201-1–072201-3 (2008).
[CrossRef]

K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding,” Appl. Phys. Express 2, 071003-1–071003-3 (2009).
[CrossRef]

Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Blue-Green InGaN∕GaN Laser Diodes on Miscut m-Plane GaN Substrate,” Appl. Phys. Express 2, 082102-1–082102-3 (2009).
[CrossRef]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11–22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1, 091103-1–091103-3 (2008).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 426 nmInGaN∕GaN Laser Diodes Fabricated on Free-Standing Semipolar (11–22) Gallium Nitride Substrates,” Appl. Phys. Express 1, 091102-1–091102-3 (2008).
[CrossRef]

H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of InGaN∕GaN Laser Diodes on Semipolar (11–22) Plane Gallium Nitrides,” Appl. Phys. Express 2, 021002-1–021002-3 (2009).
[CrossRef]

D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. Zah, “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” Appl. Phys. Express 2, 071001-1–071001-3 (2009).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20–21} Free-Standing GaN Substrates,” Appl. Phys. Express 2, 082101-1–082101-3 (2009).
[CrossRef]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, K. Katayama, and T. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 2, 092101-1–092101-3 (2009).
[CrossRef]

A. Tyagi, R. M. Farrell1, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011002-1–011002-3 (2010).
[CrossRef]

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20–21} GaN Substrates,” Appl. Phys. Express 3, 011003-1–011003-3 (2010).
[CrossRef]

Appl. Phys. Lett. (5)

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S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story, 2nd edition (Springer, 2000).

Y. Hirano, T. Sasagawa, T. Yanagisawa, S. Yamamoto, A. Nakamura, T. Yagi, and H. Sugiura, “Solid-State SHG Green Laser for Laser TV,” in International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper PThA3.

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Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura are preparing a manuscript to be called “High quality, InGaN∕AlGaN multiple quantum wells for semipolar InGaN green laser diodes.”

Y.-D. Lin, Ph.D dissertation (University of California, Santa Barabara, 2010).

J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, N. Pfister, D. Kebort, Y.-C. Chang, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing Symposium 2010, 7686–18 (2010); Private communication with J. W. Raring in Kaai, Inc.

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Figures (4)

Fig. 1
Fig. 1

Color range when using 460-, 530-, and 630 - nm laser optical sources plotted on the CIE 1931 color space chromaticity diagram.

Fig. 2
Fig. 2

(a) Maximum output power per single emitter under either pulsed or cw operation as a function of wavelength. (b) Typical wall-plug efficiencies at the maximum output powers corresponding to (a). Note that various active region widths are used. Blue, green, and red points correspond to group-III nitride based-LDs, SHG pumped by IR LDs, and AlGaInP-based LDs, respectively.

Fig. 3
Fig. 3

The relative LED (spontaneous emission) output powers for m-plane and the ( 20 2 ¯ 1 ) plane according to the UCSB after Lin et al. [37].

Fig. 4
Fig. 4

Estimated relative LD output powers as a function of IQE of spontaneous emission ( η i ) under assumption that the threshold current is kept constant by controlling facet reflectivities.

Tables (1)

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Table 1 Summary of the Typical Device Performance of InGaN-Based Green LDs a

Equations (1)

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P = ω q α m α m + α i η d ( I I th ) ,

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