Abstract

Terahertz (THz) time-domain spectroscopy is used as a noncontact method to evaluate a nondoped indium phosphide (InP) wafer for the temperature and frequency ranges of $4.2–300\mathrm{K}$ and $0.2–4\mathrm{THz}$, respectively. The strongly temperature- and frequency-dependent optical constants of the complex refractive index and complex conductivity were observed in the THz region, which were fitted and analyzed with a simple Drude model. The temperature dependence of the carrier density and scattering time are also presented. The shallow donors of impurities are discussed with the obtained results.

© 2009 Optical Society of America

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