Abstract

An efficient way to model the distributed Bragg reflector type of semiconductor devices with residual facet reflectivity is presented. Particularly, to improve the performance of such laser from two different ways of tuning—the differential or simultaneous tuning of two reflectors—the impacts of residual facet reflectivity on the sampled grating, and the static characteristics of such laser, including tuning behavior, output power, and side mode suppression ratio, are discussed. It revealed that the position of the facet relative to the gratings as well as their reflectivities are important parameters and should be carefully designed and fabricated to ensure good performance for such devices.

© 2009 Optical Society of America

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