Abstract

Optical second-harmonic generation from a silicon-on-insulator wafer has been investigated over a broad spectral region. The nonlinear signal shows oscillations with wavelengths that depend on the angle of incidence. A number of characteristic structures are caused by linear multiple reflections in the layered structure at the fundamental and second-harmonic wavelengths. Furthermore, an interference between signals generated by second-harmonic sources at different interfaces appears. Possibilities for isolating signals from buried interfaces through variations of pump wavelength and angle of incidence are discussed.

© 2009 Optical Society of America

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    [CrossRef]
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    [CrossRef]
  3. G. Erley, R. Butz, and W. Daum, “Second-harmonic spectroscopy of interband excitations at the interfaces of strained Si(100)-Si0.85Ge0.15-SiO2 heterostructures,” Phys. Rev. B 59, 2915-2926 (1999).
    [CrossRef]
  4. S. Bergfeld, B. Braunschweig, and W. Daum, “Nonlinear optical spectroscopy at oxidized Si(111) interfaces,” Phys. Rev. Lett. 93, 097402 (2004).
    [CrossRef]
  5. W. Daum, “Optical studies of Si/SiO2 interfaces by second-harmonic generation spectroscopy of silicon interband transitions,” Appl. Phys. A 87, 451-460 (2007).
    [CrossRef]
  6. Y. Q. An, R. Carriles, and M. C. Downer, “Absolute phase and amplitude of second-order nonlinear optical susceptibility components at Si(001) interfaces,” Phys. Rev. B 75, 241307 (2007).
    [CrossRef]
  7. Y. Q. An and S. Cundiff, “Phase inversion in rotational anisotropy of second harmonic generation at Si(001) interfaces,” Phys. Rev. B 67, 193302 (2003).
    [CrossRef]
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    [CrossRef]

2007 (4)

W. Daum, “Optical studies of Si/SiO2 interfaces by second-harmonic generation spectroscopy of silicon interband transitions,” Appl. Phys. A 87, 451-460 (2007).
[CrossRef]

Y. Q. An, R. Carriles, and M. C. Downer, “Absolute phase and amplitude of second-order nonlinear optical susceptibility components at Si(001) interfaces,” Phys. Rev. B 75, 241307 (2007).
[CrossRef]

N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectron. Eng. 84, 2089-2092 (2007).

M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second-harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semicond. Manuf. 20, 107-113 (2007).
[CrossRef]

2004 (3)

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Christoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004).
[CrossRef]

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

S. Bergfeld, B. Braunschweig, and W. Daum, “Nonlinear optical spectroscopy at oxidized Si(111) interfaces,” Phys. Rev. Lett. 93, 097402 (2004).
[CrossRef]

2003 (3)

Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub, “Band offsets measured by internal photoemission-induced second-harmonic generation,” Phys. Rev. B 67, 045302 (2003).
[CrossRef]

G. K. Celler and S. Cristoloveanu, “Frontiers of silicon-on-insulator,” J. Appl. Phys. 93, 4955-4978 (2003).
[CrossRef]

Y. Q. An and S. Cundiff, “Phase inversion in rotational anisotropy of second harmonic generation at Si(001) interfaces,” Phys. Rev. B 67, 193302 (2003).
[CrossRef]

1999 (2)

G. Lüpke, “Characterization of semiconductor interfaces by second-harmonic generation,” Surf. Sci. Rep. 35, 75-161 (1999).
[CrossRef]

G. Erley, R. Butz, and W. Daum, “Second-harmonic spectroscopy of interband excitations at the interfaces of strained Si(100)-Si0.85Ge0.15-SiO2 heterostructures,” Phys. Rev. B 59, 2915-2926 (1999).
[CrossRef]

1996 (1)

J. Bloch, J. G. Mihaychuk, and H. M. van Driel, “Electron photoinjection from silicon to ultrathin SiO2 films via ambient oxygen,” Phys. Rev. Lett. 77, 920-923 (1996).
[CrossRef]

1989 (1)

1987 (2)

J. E. Sipe, D. J. Moss, and H. M. van Driel, “Phenomenological theory of optical second-and third-harmonic generation from cubic centrosymmetric crystals,” Phys. Rev. B 35, 1129-1141 (1987).
[CrossRef]

J. E. Sipe, “New Green-function formalism for surface optics,” J. Opt. Soc. Am. B 4, 481-489 (1987).
[CrossRef]

Alles, M. L.

N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectron. Eng. 84, 2089-2092 (2007).

M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second-harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semicond. Manuf. 20, 107-113 (2007).
[CrossRef]

An, Y. Q.

Y. Q. An, R. Carriles, and M. C. Downer, “Absolute phase and amplitude of second-order nonlinear optical susceptibility components at Si(001) interfaces,” Phys. Rev. B 75, 241307 (2007).
[CrossRef]

Y. Q. An and S. Cundiff, “Phase inversion in rotational anisotropy of second harmonic generation at Si(001) interfaces,” Phys. Rev. B 67, 193302 (2003).
[CrossRef]

Bergfeld, S.

S. Bergfeld, B. Braunschweig, and W. Daum, “Nonlinear optical spectroscopy at oxidized Si(111) interfaces,” Phys. Rev. Lett. 93, 097402 (2004).
[CrossRef]

Bethune, D. S.

Bloch, J.

J. Bloch, J. G. Mihaychuk, and H. M. van Driel, “Electron photoinjection from silicon to ultrathin SiO2 films via ambient oxygen,” Phys. Rev. Lett. 77, 920-923 (1996).
[CrossRef]

Braunschweig, B.

S. Bergfeld, B. Braunschweig, and W. Daum, “Nonlinear optical spectroscopy at oxidized Si(111) interfaces,” Phys. Rev. Lett. 93, 097402 (2004).
[CrossRef]

Bresson, N.

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Christoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004).
[CrossRef]

Brunier, F.

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Christoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004).
[CrossRef]

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

Butz, R.

G. Erley, R. Butz, and W. Daum, “Second-harmonic spectroscopy of interband excitations at the interfaces of strained Si(100)-Si0.85Ge0.15-SiO2 heterostructures,” Phys. Rev. B 59, 2915-2926 (1999).
[CrossRef]

Carriles, R.

Y. Q. An, R. Carriles, and M. C. Downer, “Absolute phase and amplitude of second-order nonlinear optical susceptibility components at Si(001) interfaces,” Phys. Rev. B 75, 241307 (2007).
[CrossRef]

Celler, G. K.

G. K. Celler and S. Cristoloveanu, “Frontiers of silicon-on-insulator,” J. Appl. Phys. 93, 4955-4978 (2003).
[CrossRef]

Christoloveanu, S.

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Christoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004).
[CrossRef]

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

Cristoloveanu, S.

G. K. Celler and S. Cristoloveanu, “Frontiers of silicon-on-insulator,” J. Appl. Phys. 93, 4955-4978 (2003).
[CrossRef]

Cundiff, S.

Y. Q. An and S. Cundiff, “Phase inversion in rotational anisotropy of second harmonic generation at Si(001) interfaces,” Phys. Rev. B 67, 193302 (2003).
[CrossRef]

Daum, W.

W. Daum, “Optical studies of Si/SiO2 interfaces by second-harmonic generation spectroscopy of silicon interband transitions,” Appl. Phys. A 87, 451-460 (2007).
[CrossRef]

S. Bergfeld, B. Braunschweig, and W. Daum, “Nonlinear optical spectroscopy at oxidized Si(111) interfaces,” Phys. Rev. Lett. 93, 097402 (2004).
[CrossRef]

G. Erley, R. Butz, and W. Daum, “Second-harmonic spectroscopy of interband excitations at the interfaces of strained Si(100)-Si0.85Ge0.15-SiO2 heterostructures,” Phys. Rev. B 59, 2915-2926 (1999).
[CrossRef]

Dolan, R. P.

M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second-harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semicond. Manuf. 20, 107-113 (2007).
[CrossRef]

N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectron. Eng. 84, 2089-2092 (2007).

Downer, M. C.

Y. Q. An, R. Carriles, and M. C. Downer, “Absolute phase and amplitude of second-order nonlinear optical susceptibility components at Si(001) interfaces,” Phys. Rev. B 75, 241307 (2007).
[CrossRef]

Erley, G.

G. Erley, R. Butz, and W. Daum, “Second-harmonic spectroscopy of interband excitations at the interfaces of strained Si(100)-Si0.85Ge0.15-SiO2 heterostructures,” Phys. Rev. B 59, 2915-2926 (1999).
[CrossRef]

Fleetwood, D. M.

M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second-harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semicond. Manuf. 20, 107-113 (2007).
[CrossRef]

N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectron. Eng. 84, 2089-2092 (2007).

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Christoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004).
[CrossRef]

Fouillat, M.

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

Jiang, Y.

Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub, “Band offsets measured by internal photoemission-induced second-harmonic generation,” Phys. Rev. B 67, 045302 (2003).
[CrossRef]

Jun, B.

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Christoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004).
[CrossRef]

Kozub, J.

Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub, “Band offsets measured by internal photoemission-induced second-harmonic generation,” Phys. Rev. B 67, 045302 (2003).
[CrossRef]

Lu, X.

N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectron. Eng. 84, 2089-2092 (2007).

M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second-harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semicond. Manuf. 20, 107-113 (2007).
[CrossRef]

Lüpke, G.

G. Lüpke, “Characterization of semiconductor interfaces by second-harmonic generation,” Surf. Sci. Rep. 35, 75-161 (1999).
[CrossRef]

Marka, Z.

Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub, “Band offsets measured by internal photoemission-induced second-harmonic generation,” Phys. Rev. B 67, 045302 (2003).
[CrossRef]

Mihaychuk, J. G.

J. Bloch, J. G. Mihaychuk, and H. M. van Driel, “Electron photoinjection from silicon to ultrathin SiO2 films via ambient oxygen,” Phys. Rev. Lett. 77, 920-923 (1996).
[CrossRef]

Moss, D. J.

J. E. Sipe, D. J. Moss, and H. M. van Driel, “Phenomenological theory of optical second-and third-harmonic generation from cubic centrosymmetric crystals,” Phys. Rev. B 35, 1129-1141 (1987).
[CrossRef]

Pantelides, S. T.

Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub, “Band offsets measured by internal photoemission-induced second-harmonic generation,” Phys. Rev. B 67, 045302 (2003).
[CrossRef]

Pasternak, R.

N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectron. Eng. 84, 2089-2092 (2007).

M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second-harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semicond. Manuf. 20, 107-113 (2007).
[CrossRef]

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub, “Band offsets measured by internal photoemission-induced second-harmonic generation,” Phys. Rev. B 67, 045302 (2003).
[CrossRef]

Rashkeev, S. N.

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub, “Band offsets measured by internal photoemission-induced second-harmonic generation,” Phys. Rev. B 67, 045302 (2003).
[CrossRef]

Roy, P. K.

Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub, “Band offsets measured by internal photoemission-induced second-harmonic generation,” Phys. Rev. B 67, 045302 (2003).
[CrossRef]

Schrimpf, R. D.

N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectron. Eng. 84, 2089-2092 (2007).

M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second-harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semicond. Manuf. 20, 107-113 (2007).
[CrossRef]

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Christoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004).
[CrossRef]

Sipe, J. E.

J. E. Sipe, “New Green-function formalism for surface optics,” J. Opt. Soc. Am. B 4, 481-489 (1987).
[CrossRef]

J. E. Sipe, D. J. Moss, and H. M. van Driel, “Phenomenological theory of optical second-and third-harmonic generation from cubic centrosymmetric crystals,” Phys. Rev. B 35, 1129-1141 (1987).
[CrossRef]

Standley, R. W.

M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second-harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semicond. Manuf. 20, 107-113 (2007).
[CrossRef]

N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectron. Eng. 84, 2089-2092 (2007).

Tolk, N. H.

N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectron. Eng. 84, 2089-2092 (2007).

M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second-harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semicond. Manuf. 20, 107-113 (2007).
[CrossRef]

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Christoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004).
[CrossRef]

Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub, “Band offsets measured by internal photoemission-induced second-harmonic generation,” Phys. Rev. B 67, 045302 (2003).
[CrossRef]

van Driel, H. M.

J. Bloch, J. G. Mihaychuk, and H. M. van Driel, “Electron photoinjection from silicon to ultrathin SiO2 films via ambient oxygen,” Phys. Rev. Lett. 77, 920-923 (1996).
[CrossRef]

J. E. Sipe, D. J. Moss, and H. M. van Driel, “Phenomenological theory of optical second-and third-harmonic generation from cubic centrosymmetric crystals,” Phys. Rev. B 35, 1129-1141 (1987).
[CrossRef]

White, Y. V.

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Christoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second-harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).
[CrossRef]

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Christoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004).
[CrossRef]

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