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Spectroscopic second-harmonic generation from silicon-on-insulator wafers

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Abstract

Optical second-harmonic generation from a silicon-on-insulator wafer has been investigated over a broad spectral region. The nonlinear signal shows oscillations with wavelengths that depend on the angle of incidence. A number of characteristic structures are caused by linear multiple reflections in the layered structure at the fundamental and second-harmonic wavelengths. Furthermore, an interference between signals generated by second-harmonic sources at different interfaces appears. Possibilities for isolating signals from buried interfaces through variations of pump wavelength and angle of incidence are discussed.

© 2009 Optical Society of America

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