Experimental characterization of high-speed 1.55 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers

M. Nadeem Akram; O. Kjebon; M. Chacinski; R. Schatz; J. Berggren; F. Olsson; S. Lourdudoss; A. Berrier

doi:10.1364/JOSAB.26.000318

Experimental characterization of high-speed $1.55 μ m$ buried heterostructure $In Ga As P ∕ In Ga Al As$ quantum-well lasers

M. Nadeem Akram, O. Kjebon, M. Chacinski, R. Schatz, J. Berggren, F. Olsson, S. Lourdudoss, and A. Berrier

Journal of the Optical Society of America B
Vol. 26,
Issue 2,
pp. 318-327
(2009)
•https://doi.org/10.1364/JOSAB.26.000318

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M. Nadeem Akram, O. Kjebon, M. Chacinski, R. Schatz, J. Berggren, F. Olsson, S. Lourdudoss, and A. Berrier, "Experimental characterization of high-speed 1.55 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers," J. Opt. Soc. Am. B 26, 318-327 (2009)

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Table of Contents Category
- Optoelectronics
Optics & Photonics Topics
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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Semiconductor lasers (250.5960)
- Quantum-well, -wire and -dot devices (250.5590)

About this Article
History
- Original Manuscript: September 30, 2008
- Revised Manuscript: October 27, 2008
- Manuscript Accepted: November 2, 2008
- Published: January 27, 2009

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Abstract

Detailed experimental characterization is performed for $1550 nm$ semi-insulating regrown buried heterostructure Fabry–Perot (FP) lasers having 20 $In Ga As P ∕ In Ga Al As$ strain-balanced quantum wells (QWs) in the active region. Light-current-voltage performance, electrical impedance, small-signal response below and above threshold, amplified spontaneous emission spectrum below threshold and relative intensity noise spectrum are measured. Different laser parameters such as external differential quantum efficiency $η_{d}$ , background optical loss $α_{i}$ , K-factor, D-factor, characteristic temperature $T_{0}$ , differential gain $d g ∕ d n$ , gain-compression factor ϵ, carrier density versus current, differential carrier lifetime $τ_{d}$ , optical gain spectrum below threshold, and chirp parameter α are extracted from these measurements. The FP lasers exhibited a high $T_{0}$ $(78 - 86.5 ° C)$ and very high-resonance frequency $(23.7 GHz)$ . The results indicate that appropriately designed lasers having a large number of InGaAsP well/InGaAlAs barrier QWs with shallow valence-band discontinuity can be useful for uncooled high-speed direct-modulated laser applications.

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Laser No.	Cavity Length $μ m$	$I_{th}$ at $20 ° C$ , mA	$I_{th}$ at $80 ° C$ , mA	$J_{th}$ /Well at $20 ° C$ , $A ∕ {cm}^{2}$	$J_{th}$ /Well at $80 ° C$ , $A ∕ {cm}^{2}$	$η_{d}$ at $20 ° C$	$η_{d}$ at $80 ° C$	$T_{0}$ of $I_{th}$ $20 - 80 ° C$	$R_{d}$ at $100 mA$ , Ω
B20-A	$200 μ m$	5.5	16.0	114.5	333.3	0.45	0.29	78.0	7.95
B20-B	$400 μ m$	9.5	20.0	99.0	208.4	0.32	0.24	80.6	6.0
B20-C	$800 μ m$	15.0	32.5	78.1	169.2	0.23	0.18	86.5	4.18

Laser No.	Cavity Length $μ m$	K-factor ns	D-factor $GHz ∕ \sqrt{mA}$	$f_{r - \max}$ GHz	$f_{3 dB - Intrinsic}$ GHz	$f_{3 dB - Thermal}$ GHz	$f_{3 dB - Overall}$ GHz	Measurement Temperature °C
B20-D	150	0.210	3.397	19.43	41.15	30.2	16.98	20
B20-D	150	0.274	2.263	11.81	30.1	18.34	12.28	75
B20-E (etched P-contact	150	0.186	3.054	23.7	43.6	36.82	19.1	20

Laser No.	Bias Current, mA	$R_{p a d}$ , Ω	$R_{s}$ , Ω	$C_{p}$ , pF	$R_{a}$ , Ω	$C_{a}$ , pF	$R_{a} C_{a} = τ_{d}$ , ns
B20-E	1	2.0	9.42	3.3	44.30	37.98	1.682
	2	2.0	8.47	3.3	23.15	46.39	1.074
	3	2.0	7.84	3.3	16.63	47.44	0.789
	4	2.0	7.50	3.3	13.89	49.61	0.689
	5	2.0	7.50	3.3	12.55	51.68	0.649

Laser No.	Cavity Length $μ m$	$I_{th}$ at $20 ° C$ , mA	$I_{th}$ at $80 ° C$ , mA	$J_{th}$ /Well at $20 ° C$ , $A ∕ {cm}^{2}$	$J_{th}$ /Well at $80 ° C$ , $A ∕ {cm}^{2}$	$η_{d}$ at $20 ° C$	$η_{d}$ at $80 ° C$	$T_{0}$ of $I_{th}$ $20 - 80 ° C$	$R_{d}$ at $100 mA$ , Ω
B20-A	$200 μ m$	5.5	16.0	114.5	333.3	0.45	0.29	78.0	7.95
B20-B	$400 μ m$	9.5	20.0	99.0	208.4	0.32	0.24	80.6	6.0
B20-C	$800 μ m$	15.0	32.5	78.1	169.2	0.23	0.18	86.5	4.18

Laser No.	Cavity Length $μ m$	K-factor ns	D-factor $GHz ∕ \sqrt{mA}$	$f_{r - \max}$ GHz	$f_{3 dB - Intrinsic}$ GHz	$f_{3 dB - Thermal}$ GHz	$f_{3 dB - Overall}$ GHz	Measurement Temperature °C
B20-D	150	0.210	3.397	19.43	41.15	30.2	16.98	20
B20-D	150	0.274	2.263	11.81	30.1	18.34	12.28	75
B20-E (etched P-contact	150	0.186	3.054	23.7	43.6	36.82	19.1	20

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