Abstract

A cross-waveguide resonator structure is proposed for silicon electro-optic modulators operating around the near-infrared (NIR) communication wavelength of 1550nm. The device is modeled based on a silicon-on-insulator wafer with a compact surface area of 16μm2 (4μm×4μm) and the modulation is achieved by resonance peak shift caused by carrier injection-based refractive index perturbation. It is shown via numerical study that the modulation speed of the device hits 2.9GHz and 3dB frequency around 4GHz, while the DC power consumption is only 17.3mW. An optimum modulation depth of 5.7dB was found after tuning the optical confinement of the cavity.

© 2009 Optical Society of America

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