Abstract

Optical mode and thermal analysis of an indium phosphide (InP) laser diode using photon scanning tunneling microscopy (PSTM) combined with atomic force microscopy (AFM) techniques are performed for industrial development. Different laser diodes emitting at $\lambda =0.98\mu \mathrm{m}$ and $\lambda =1.55\mu \mathrm{m}$ differentiated by the InP areas doped n or p are characterized. AFM/PSTM analysis provides space localization of the optical modes, identification of doping agents, analysis of the modal structure of the emitting laser diode active area, measurement of losses, and control of the morphology of optical components. The results are corroborated by lateral force imaging.

© 2008 Optical Society of America

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