Abstract

A method for calculation of near-field images of semiconductor surfaces with an inhomogeneous electron distribution is proposed. The method is based on linear response theory. As a result, the solution of the Lippman–Schwinger equation for a self-consistent field is presented via the effective susceptibility. Near-field images of a modulation-doped n-type GaAs surface subjected to illumination with pulses of a strongly focused laser beam are calculated. The developed approach is universal and applicable for the analysis of experimental data on time-resolved near-field microscopy.

© 2007 Optical Society of America

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