Abstract

We present numerical studies of recombination gain in the transition to the ground state of H-like C (21 transition at λ=3.4nm). It is shown that high gain (up to about 180cm1) can be achieved using currently available, relatively compact, laser technology. The model includes the ionization of the plasma by an ultraintense, ultrashort laser pulse, followed by plasma expansion, cooling, and recombination. Transient population inversion is generated during the recombination process. We investigate the behavior of the gain with respect to different plasma parameters and pump pulse parameters and explain how the different properties of the plasma and the pump pulse affect the gain.

© 2007 Optical Society of America

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