The characteristics of silicon-on-insulator (SOI) ridge waveguides are analyzed by using a cylindrical full-vectorial finite-difference method mode solver with a perfectly-matched layer treatment. First, the single-mode condition for an SOI ridge nanowire with different Si core thicknesses is obtained. The obtained single-mode condition is different from that for the conventional micrometrical SOI ridge waveguides with a large cross section. By adjusting the cross section (the core width and the etching depth), one can have a nonbirefringent SOI ridge nanowire. The analysis on the bending loss of SOI ridge nanowires shows that one can have a relatively small bending radius even with a shallow etching (i.e., a small ratio γ between the etching depth and the total thickness). For example, even when one chooses a small ratio , one still has a low bending loss with a small bending radius of for an SOI nanowire with a thin core , which is very different from a conventional large SOI ridge waveguide.
© 2007 Optical Society of AmericaFull Article | PDF Article
Daoxin Dai and Sailing He
J. Opt. Soc. Am. A 21(1) 113-121 (2004)
D.-X. Xu, P. Cheben, D. Dalacu, A. Delâge, S. Janz, B. Lamontagne, M.-J. Picard, and W. N. Ye
Opt. Lett. 29(20) 2384-2386 (2004)
Mee-Koy Chin, Chee-Wei Lee, Shuh-Ying Lee, and Stevanus Darmawan
Appl. Opt. 44(15) 3077-3086 (2005)