Abstract

The limits of the nonlinear Schrödinger equation for the description of propagation of intense laser pulses in the transparent regime of a bulk semiconductor is investigated. Qualitative differences between the nonlinear Schrödinger equation, the optical Bloch equations, and the semiconductor Bloch equations are worked out for the case where the Rabi frequency approaches the detuning between carrier frequency and material transition frequency.

© 2006 Optical Society of America

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