Abstract

Measurements are reported of the spectroscopic properties (absorption and emission spectra, stimulated-emission cross section, and radiative lifetime) of (YbxY1-x)3Al5O12 for nominal x values of 0.025, 0.05, 0.1, 0.2 and 0.3 at temperatures of 15–300 K. The emission cross sections of Yb:YAG with different Yb3+ concentrations were determined by use of the Füchtbauer–Ladenburg formula and the reciprocity method. At low temperatures, the product (στ) of the effective stimulated-emission cross section and the radiative lifetime is greater than at room temperature for all concentrations. Product στ is nearly independent of Yb3+ concentration at a given temperature. These results will aid in the design of high-power thin disk lasers by use of highly doped Yb:YAG.

© 2003 Optical Society of America

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  1. D. P. Bour, D. B. Gilbert, K. B. Fabian, J. P. Bednarz, and M. Ettenberg, “Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers,” IEEE Photon. Technol. Lett. 2, 173–174 (1990).
    [CrossRef]
  2. S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
    [CrossRef]
  3. R. J. Beach, “cw theory of quasi-three level end-pumped laser oscillators,” Opt. Commun. 123, 385–393 (1996).
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  4. C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
    [CrossRef]
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  15. C. D. Marshall, S. A. Payne, L. K. Smith, H. T. Powell, W. F. Krupke, and B. H. T. Chai, “1.047-μm Yb:Sr5(PO4)3F energy storage optical amplifier,” IEEE J. Sel. Top. Quantum Electron. 1, 67–77 (1995).
    [CrossRef]

2001

F. D. Patel, E. C. Honea, J. Speth, S. A. Payne, R. Hutcheson, and R. Equall, “Laser demonstration of Yb3Al5O12 (YbAG) and materials properties of highly doped Yb:YAG,” IEEE J. Quantum Electron. 37, 135–144 (2001).
[CrossRef]

2000

E. C. Honea, R. J. Beach, S. C. Mitchell, J. A. Skidmore, M. A. Emanuel, S. B. Stutton, S. A. Payne, P. V. Avizonis, R. S. Monroe, and D. G. Harris, “High-power dual-rod Yb:YAG laser,” Opt. Lett. 25, 805–807 (2000).
[CrossRef]

T. S. Rutherford, W. M. Tulloch, E. K. Gustafson, and R. L. Byer, “Edge-pumped quasi-three-level slab lasers: design and power scaling,” IEEE J. Quantum Electron. 36, 205–219 (2000).
[CrossRef]

1998

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
[CrossRef]

1997

H. W. Brusselbach, D. S. Sumida, R. A. Reeder, and R. W. Byren, “Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 105–116 (1997).
[CrossRef]

1996

R. J. Beach, “cw theory of quasi-three level end-pumped laser oscillators,” Opt. Commun. 123, 385–393 (1996).
[CrossRef]

1995

C. D. Marshall, S. A. Payne, L. K. Smith, H. T. Powell, W. F. Krupke, and B. H. T. Chai, “1.047-μm Yb:Sr5(PO4)3F energy storage optical amplifier,” IEEE J. Sel. Top. Quantum Electron. 1, 67–77 (1995).
[CrossRef]

1994

D. S. Sumida and T. Y. Fan, “Effect of radiation trapping on fluorescence lifetime and emission cross section measurements in solid-state media,” Opt. Lett. 19, 1343–1345 (1994).
[CrossRef] [PubMed]

X. Giesen, H. Hugel, A. Voss, K. Witting, U. Brauch, and H. Opower, “Scalable concept for diode-pumped high-power solid-state lasers,” Appl. Phys. B 58, 365–372 (1994).
[CrossRef]

1993

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

T. Y. Fan, S. Klunk, and G. Henein, “Diode-pumped Q-switched Yb:YAG laser,” Opt. Lett. 18, 423–425 (1993).
[CrossRef] [PubMed]

1991

1990

D. P. Bour, D. B. Gilbert, K. B. Fabian, J. P. Bednarz, and M. Ettenberg, “Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers,” IEEE Photon. Technol. Lett. 2, 173–174 (1990).
[CrossRef]

1988

T. Y. Fan and R. L. Byer, “Diode laser pumped solid-state laser,” IEEE J. Quantum Electron. 24, 895–912 (1988).
[CrossRef]

Aggarwal, R. L.

Avizonis, P. V.

Baumaum, J. A.

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

Beach, R. J.

E. C. Honea, R. J. Beach, S. C. Mitchell, J. A. Skidmore, M. A. Emanuel, S. B. Stutton, S. A. Payne, P. V. Avizonis, R. S. Monroe, and D. G. Harris, “High-power dual-rod Yb:YAG laser,” Opt. Lett. 25, 805–807 (2000).
[CrossRef]

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
[CrossRef]

R. J. Beach, “cw theory of quasi-three level end-pumped laser oscillators,” Opt. Commun. 123, 385–393 (1996).
[CrossRef]

Bednarz, J. P.

D. P. Bour, D. B. Gilbert, K. B. Fabian, J. P. Bednarz, and M. Ettenberg, “Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers,” IEEE Photon. Technol. Lett. 2, 173–174 (1990).
[CrossRef]

Bibeau, C.

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
[CrossRef]

Bour, D. P.

D. P. Bour, D. B. Gilbert, K. B. Fabian, J. P. Bednarz, and M. Ettenberg, “Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers,” IEEE Photon. Technol. Lett. 2, 173–174 (1990).
[CrossRef]

Brauch, U.

X. Giesen, H. Hugel, A. Voss, K. Witting, U. Brauch, and H. Opower, “Scalable concept for diode-pumped high-power solid-state lasers,” Appl. Phys. B 58, 365–372 (1994).
[CrossRef]

Brusselbach, H. W.

H. W. Brusselbach, D. S. Sumida, R. A. Reeder, and R. W. Byren, “Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 105–116 (1997).
[CrossRef]

Byer, R. L.

T. S. Rutherford, W. M. Tulloch, E. K. Gustafson, and R. L. Byer, “Edge-pumped quasi-three-level slab lasers: design and power scaling,” IEEE J. Quantum Electron. 36, 205–219 (2000).
[CrossRef]

T. Y. Fan and R. L. Byer, “Diode laser pumped solid-state laser,” IEEE J. Quantum Electron. 24, 895–912 (1988).
[CrossRef]

Byren, R. W.

H. W. Brusselbach, D. S. Sumida, R. A. Reeder, and R. W. Byren, “Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 105–116 (1997).
[CrossRef]

Bystrom, K. J.

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

Chai, B. H. T.

C. D. Marshall, S. A. Payne, L. K. Smith, H. T. Powell, W. F. Krupke, and B. H. T. Chai, “1.047-μm Yb:Sr5(PO4)3F energy storage optical amplifier,” IEEE J. Sel. Top. Quantum Electron. 1, 67–77 (1995).
[CrossRef]

Choi, H. K.

Dalby, R. J.

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

Ebbers, C. A.

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
[CrossRef]

Emanuel, M. A.

E. C. Honea, R. J. Beach, S. C. Mitchell, J. A. Skidmore, M. A. Emanuel, S. B. Stutton, S. A. Payne, P. V. Avizonis, R. S. Monroe, and D. G. Harris, “High-power dual-rod Yb:YAG laser,” Opt. Lett. 25, 805–807 (2000).
[CrossRef]

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
[CrossRef]

Equall, R.

F. D. Patel, E. C. Honea, J. Speth, S. A. Payne, R. Hutcheson, and R. Equall, “Laser demonstration of Yb3Al5O12 (YbAG) and materials properties of highly doped Yb:YAG,” IEEE J. Quantum Electron. 37, 135–144 (2001).
[CrossRef]

Ettenberg, M.

D. P. Bour, D. B. Gilbert, K. B. Fabian, J. P. Bednarz, and M. Ettenberg, “Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers,” IEEE Photon. Technol. Lett. 2, 173–174 (1990).
[CrossRef]

Fabian, K. B.

D. P. Bour, D. B. Gilbert, K. B. Fabian, J. P. Bednarz, and M. Ettenberg, “Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers,” IEEE Photon. Technol. Lett. 2, 173–174 (1990).
[CrossRef]

Fan, T. Y.

Giesen, X.

X. Giesen, H. Hugel, A. Voss, K. Witting, U. Brauch, and H. Opower, “Scalable concept for diode-pumped high-power solid-state lasers,” Appl. Phys. B 58, 365–372 (1994).
[CrossRef]

Gilbert, D. B.

D. P. Bour, D. B. Gilbert, K. B. Fabian, J. P. Bednarz, and M. Ettenberg, “Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers,” IEEE Photon. Technol. Lett. 2, 173–174 (1990).
[CrossRef]

Guide, T. S.

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

Gustafson, E. K.

T. S. Rutherford, W. M. Tulloch, E. K. Gustafson, and R. L. Byer, “Edge-pumped quasi-three-level slab lasers: design and power scaling,” IEEE J. Quantum Electron. 36, 205–219 (2000).
[CrossRef]

Harding, C. M.

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

Harris, D. G.

Henein, G.

Honea, E. C.

F. D. Patel, E. C. Honea, J. Speth, S. A. Payne, R. Hutcheson, and R. Equall, “Laser demonstration of Yb3Al5O12 (YbAG) and materials properties of highly doped Yb:YAG,” IEEE J. Quantum Electron. 37, 135–144 (2001).
[CrossRef]

E. C. Honea, R. J. Beach, S. C. Mitchell, J. A. Skidmore, M. A. Emanuel, S. B. Stutton, S. A. Payne, P. V. Avizonis, R. S. Monroe, and D. G. Harris, “High-power dual-rod Yb:YAG laser,” Opt. Lett. 25, 805–807 (2000).
[CrossRef]

Hugel, H.

X. Giesen, H. Hugel, A. Voss, K. Witting, U. Brauch, and H. Opower, “Scalable concept for diode-pumped high-power solid-state lasers,” Appl. Phys. B 58, 365–372 (1994).
[CrossRef]

Hutcheson, R.

F. D. Patel, E. C. Honea, J. Speth, S. A. Payne, R. Hutcheson, and R. Equall, “Laser demonstration of Yb3Al5O12 (YbAG) and materials properties of highly doped Yb:YAG,” IEEE J. Quantum Electron. 37, 135–144 (2001).
[CrossRef]

Jancaitis, K. S.

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
[CrossRef]

Klunk, S.

Krupke, W. F.

C. D. Marshall, S. A. Payne, L. K. Smith, H. T. Powell, W. F. Krupke, and B. H. T. Chai, “1.047-μm Yb:Sr5(PO4)3F energy storage optical amplifier,” IEEE J. Sel. Top. Quantum Electron. 1, 67–77 (1995).
[CrossRef]

Lacovara, P.

Marshall, C. D.

C. D. Marshall, S. A. Payne, L. K. Smith, H. T. Powell, W. F. Krupke, and B. H. T. Chai, “1.047-μm Yb:Sr5(PO4)3F energy storage optical amplifier,” IEEE J. Sel. Top. Quantum Electron. 1, 67–77 (1995).
[CrossRef]

Mitchell, S. C.

E. C. Honea, R. J. Beach, S. C. Mitchell, J. A. Skidmore, M. A. Emanuel, S. B. Stutton, S. A. Payne, P. V. Avizonis, R. S. Monroe, and D. G. Harris, “High-power dual-rod Yb:YAG laser,” Opt. Lett. 25, 805–807 (2000).
[CrossRef]

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
[CrossRef]

Monroe, R. S.

Opower, H.

X. Giesen, H. Hugel, A. Voss, K. Witting, U. Brauch, and H. Opower, “Scalable concept for diode-pumped high-power solid-state lasers,” Appl. Phys. B 58, 365–372 (1994).
[CrossRef]

Patel, F. D.

F. D. Patel, E. C. Honea, J. Speth, S. A. Payne, R. Hutcheson, and R. Equall, “Laser demonstration of Yb3Al5O12 (YbAG) and materials properties of highly doped Yb:YAG,” IEEE J. Quantum Electron. 37, 135–144 (2001).
[CrossRef]

Payne, S. A.

F. D. Patel, E. C. Honea, J. Speth, S. A. Payne, R. Hutcheson, and R. Equall, “Laser demonstration of Yb3Al5O12 (YbAG) and materials properties of highly doped Yb:YAG,” IEEE J. Quantum Electron. 37, 135–144 (2001).
[CrossRef]

E. C. Honea, R. J. Beach, S. C. Mitchell, J. A. Skidmore, M. A. Emanuel, S. B. Stutton, S. A. Payne, P. V. Avizonis, R. S. Monroe, and D. G. Harris, “High-power dual-rod Yb:YAG laser,” Opt. Lett. 25, 805–807 (2000).
[CrossRef]

C. D. Marshall, S. A. Payne, L. K. Smith, H. T. Powell, W. F. Krupke, and B. H. T. Chai, “1.047-μm Yb:Sr5(PO4)3F energy storage optical amplifier,” IEEE J. Sel. Top. Quantum Electron. 1, 67–77 (1995).
[CrossRef]

Powell, H. T.

C. D. Marshall, S. A. Payne, L. K. Smith, H. T. Powell, W. F. Krupke, and B. H. T. Chai, “1.047-μm Yb:Sr5(PO4)3F energy storage optical amplifier,” IEEE J. Sel. Top. Quantum Electron. 1, 67–77 (1995).
[CrossRef]

Reeder, R. A.

H. W. Brusselbach, D. S. Sumida, R. A. Reeder, and R. W. Byren, “Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 105–116 (1997).
[CrossRef]

Rutherford, T. S.

T. S. Rutherford, W. M. Tulloch, E. K. Gustafson, and R. L. Byer, “Edge-pumped quasi-three-level slab lasers: design and power scaling,” IEEE J. Quantum Electron. 36, 205–219 (2000).
[CrossRef]

Serreze, H. B.

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

Shepard, A. H.

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

Skidmore, J.

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
[CrossRef]

Skidmore, J. A.

Smith, L. K.

C. D. Marshall, S. A. Payne, L. K. Smith, H. T. Powell, W. F. Krupke, and B. H. T. Chai, “1.047-μm Yb:Sr5(PO4)3F energy storage optical amplifier,” IEEE J. Sel. Top. Quantum Electron. 1, 67–77 (1995).
[CrossRef]

Solarz, R.

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

Speth, J.

F. D. Patel, E. C. Honea, J. Speth, S. A. Payne, R. Hutcheson, and R. Equall, “Laser demonstration of Yb3Al5O12 (YbAG) and materials properties of highly doped Yb:YAG,” IEEE J. Quantum Electron. 37, 135–144 (2001).
[CrossRef]

Stutton, S. B.

Sumida, D. S.

H. W. Brusselbach, D. S. Sumida, R. A. Reeder, and R. W. Byren, “Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 105–116 (1997).
[CrossRef]

D. S. Sumida and T. Y. Fan, “Effect of radiation trapping on fluorescence lifetime and emission cross section measurements in solid-state media,” Opt. Lett. 19, 1343–1345 (1994).
[CrossRef] [PubMed]

Sutton, S. B.

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore, C. A. Ebbers, S. B. Sutton, and K. S. Jancaitis, “High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser,” IEEE J. Quantum Electron. 34, 2010–2019 (1998).
[CrossRef]

Tulloch, W. M.

T. S. Rutherford, W. M. Tulloch, E. K. Gustafson, and R. L. Byer, “Edge-pumped quasi-three-level slab lasers: design and power scaling,” IEEE J. Quantum Electron. 36, 205–219 (2000).
[CrossRef]

Voss, A.

X. Giesen, H. Hugel, A. Voss, K. Witting, U. Brauch, and H. Opower, “Scalable concept for diode-pumped high-power solid-state lasers,” Appl. Phys. B 58, 365–372 (1994).
[CrossRef]

Walters, R. G.

S. L. Yellin, A. H. Shepard, R. J. Dalby, J. A. Baumaum, H. B. Serreze, T. S. Guide, R. Solarz, K. J. Bystrom, C. M. Harding, and R. G. Walters, “Reliability of GaAs-based semiconductor diode lasers: 0.6–1.1 μm,” IEEE J. Quantum Electron. 29, 2058–2067 (1993).
[CrossRef]

Wang, C. A.

Witting, K.

X. Giesen, H. Hugel, A. Voss, K. Witting, U. Brauch, and H. Opower, “Scalable concept for diode-pumped high-power solid-state lasers,” Appl. Phys. B 58, 365–372 (1994).
[CrossRef]

Yellin, S. L.

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Figures (8)

Fig. 1
Fig. 1

Absorption spectra of Yb:YAG with five Yb concentrations at room temperature.

Fig. 2
Fig. 2

Emission spectra of 10-at. % Yb:YAG at 70 K and at room temperature (293 K).

Fig. 3
Fig. 3

Measured room-temperature fluorescent lifetime of Yb3+ ions in YAG as a function of concentration. The solid curve is the functional form for this dependence that is due to radiation trapping as given in Ref. 15 with 969-nm branching ratio β=0.366 and geometric scaling factor γ=0.203 used as fitting parameters.

Fig. 4
Fig. 4

Measured lifetimes of Yb:YAG crystals as a function of temperature.

Fig. 5
Fig. 5

(a) Measured product στ of Yb:YAG crystals for (a) five Yb3+ ion concentrations as a function of temperature and (b) six temperatures as a function of the concentration of Yb3+ ions.

Fig. 6
Fig. 6

Emission cross sections of Yb:YAG as a function of temperature for five concentrations of Yb. The indicated polynomial fits were obtained by the least-squares method.

Fig. 7
Fig. 7

Linewidths (FWHM) near the peak lasing wavelength of Yb:YAG as a function of temperature for five concentrations of Yb.

Fig. 8
Fig. 8

Peak lasing wavelengths of Yb:YAG as a function of temperature for five concentrations of Yb.

Equations (2)

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σem(λ)=18πλ5n2cτI(λ)I(λ)λdλ,
στ=18πλ5n2cI(λ)I(λ)λdλ

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