Abstract

A theoretical model of continuous-wave Yb3+-doped microchip lasers based on a quasi-four-level system is proposed, and it is applied to the Yb:YAG microchip laser. The theoretical results of calculations are in agreement with those of experiments. Several ways to improve the properties of Yb3+-doped microchip lasers are described. This model is applicable not only to Yb3+-doped microchip lasers but also to other quasi-four-level microchip lasers.

© 2003 Optical Society of America

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