Abstract

The dynamics of pulsed-laser annealing of an ion-implanted GaAs surface is studied by second-harmonic generation in reflection. The results are explained in terms of surface melting. Sum-frequency and second-harmonic generation in reflection are shown to be sensitive, convenient techniques having high temporal and spatial resolution for studying the structure of GaAs surfaces that have been laser annealed or randomized by ion implantation and of laser-induced phase transitions. The tensor nature of the second-order nonlinearity provides an opportunity to make polarizational measurements that are sensitive to small structural changes.

© 1985 Optical Society of America

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