S. N. Rashkeev, S. Limpijumnong, and W. R. L. Lambrecht, “Second-harmonic generation and birefringence of some ternary pnictide semiconductors,” Phys. Rev. B 59, 2737–2748 (1999).

[Crossref]

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).

[Crossref]

M. Brown, “Increased spectral bandwidths in nonlinear conversion processes by use of multicrystal designs,” Opt. Lett. 23, 1591–1593 (1998).

[Crossref]

S. Wang, V. Pasiskevicisius, F. Laurell, and H. Karlsson, “Ultraviolet generation by first-order frequency doubling in periodically poled KTiOPO4,” Opt. Lett. 23, 1883–1885 (1998).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors,” Phys. Rev. B 57, 3905–3919 (1998).

[Crossref]

T. Ishii, Y. Tazoh, and S. Miyazawa, “Single-crystal growth of LiGaO2 for a substrate of GaN thin films,” J. Cryst. Growth 186, 409–419 (1998).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Second-harmonic generation in SiC polytypes,” Phys. Rev. B 57, 9705–9715 (1998).

[Crossref]

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).

[Crossref]

Y. Uchiyama, M. Tsuchiya, H.-F. Liu, and T. Kamiya, “Efficient ultraviolet-light (345-nm) generation in a bulk LiIO3 crystal by frequency doubling of a self-seeded gain-switched AlGaInP Fabry–Perot semiconductor laser,” Opt. Lett. 22, 78–80 (1997).

[Crossref]
[PubMed]

J. L. P. Hughes and J. E. Sipe, “Calculation of linear and second-order optical response in wurtzite GaN and AlN,” Phys. Rev. B 55, 13630–13640 (1997); “Calculation of second-order optical response in semiconductors,” Phys. Rev. B 53, 10751–10763 (1996).

[Crossref]

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 µm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).

[Crossref]

C. Aversa and J. E. Sipe, “Nonlinear optical susceptibilities of semiconductors: results with a length-gauge analysis,” Phys. Rev. B 52, 14636–14645 (1995).

[Crossref]

R. Atanasov, F. Bassani, and V. M. Agranovich, “Second-order nonlinear optical susceptibility of asymmetric quantum wells,” Phys. Rev. B 50, 7809–7819 (1994).

[Crossref]

J. E. Sipe and E. Ghahramani, “Nonlinear optical response of semiconductors in the independent-particle approximation,” Phys. Rev. B 48, 11705–11722 (1993).

[Crossref]

D. A. Roberts, “Simplified characterization of uniaxial and biaxial nonlinear optical crystals: a plea for standardization of nomenclature and conventions,” IEEE J. Quantum Electron. 28, 2057–2074 (1992).

[Crossref]

Z. H. Levine and D. C. Allen, “Optical second-harmonic generation in III-V semiconductors: detailed formulation and computational results,” Phys. Rev. B 44, 12781–12793 (1991).

[Crossref]

L. Tsang and S.-L. Chuang, “Exciton effects on second-order nonlinear susceptibility in a quantum well with an applied electric field,” Phys. Rev. B 42, 5229–5239 (1990).

[Crossref]

O. K. Andersen, “Linear methods in band theory,” Phys. Rev. B 12, 3060–3083 (1975).

[Crossref]

G. A. Slack, “Nonmetallic crystals with high thermal conductivity,” J. Phys. Chem. Solids 34, 321–335 (1973).

[Crossref]

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).

[Crossref]

P. Hohenberg and W. Kohn, “Inhomogeneous electron gas,” Phys. Rev. 136, B864–B871 (1964); W. Kohn and L. J. Sham, “Self-consistent equations including exchange and correlation effects,” Phys. Rev. 140, A1133–A1138 (1965).

[Crossref]

R. Atanasov, F. Bassani, and V. M. Agranovich, “Second-order nonlinear optical susceptibility of asymmetric quantum wells,” Phys. Rev. B 50, 7809–7819 (1994).

[Crossref]

Z. H. Levine and D. C. Allen, “Optical second-harmonic generation in III-V semiconductors: detailed formulation and computational results,” Phys. Rev. B 44, 12781–12793 (1991).

[Crossref]

O. K. Andersen, “Linear methods in band theory,” Phys. Rev. B 12, 3060–3083 (1975).

[Crossref]

R. Atanasov, F. Bassani, and V. M. Agranovich, “Second-order nonlinear optical susceptibility of asymmetric quantum wells,” Phys. Rev. B 50, 7809–7819 (1994).

[Crossref]

C. Aversa and J. E. Sipe, “Nonlinear optical susceptibilities of semiconductors: results with a length-gauge analysis,” Phys. Rev. B 52, 14636–14645 (1995).

[Crossref]

R. Atanasov, F. Bassani, and V. M. Agranovich, “Second-order nonlinear optical susceptibility of asymmetric quantum wells,” Phys. Rev. B 50, 7809–7819 (1994).

[Crossref]

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).

[Crossref]

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).

[Crossref]

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).

[Crossref]

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc.395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc.395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

L. Tsang and S.-L. Chuang, “Exciton effects on second-order nonlinear susceptibility in a quantum well with an applied electric field,” Phys. Rev. B 42, 5229–5239 (1990).

[Crossref]

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 µm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).

[Crossref]

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc.395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).

[Crossref]

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc.395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

J. E. Sipe and E. Ghahramani, “Nonlinear optical response of semiconductors in the independent-particle approximation,” Phys. Rev. B 48, 11705–11722 (1993).

[Crossref]

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc.395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

P. Hohenberg and W. Kohn, “Inhomogeneous electron gas,” Phys. Rev. 136, B864–B871 (1964); W. Kohn and L. J. Sham, “Self-consistent equations including exchange and correlation effects,” Phys. Rev. 140, A1133–A1138 (1965).

[Crossref]

J. L. P. Hughes and J. E. Sipe, “Calculation of linear and second-order optical response in wurtzite GaN and AlN,” Phys. Rev. B 55, 13630–13640 (1997); “Calculation of second-order optical response in semiconductors,” Phys. Rev. B 53, 10751–10763 (1996).

[Crossref]

T. Ishii, Y. Tazoh, and S. Miyazawa, “Single-crystal growth of LiGaO2 for a substrate of GaN thin films,” J. Cryst. Growth 186, 409–419 (1998).

[Crossref]

S. Limpijumnong, W. R. L. Lambrecht, B. Segall, and K. Kim, “Band structure and cation ordering in LiGaO2,” in III-V Nitrides, F. A. Ponce, T. D. Moustakis, I. Akasaki, and B. A. Monemar, eds., Mater. Res. Soc. Symp. Proc.449 (Materials Research Society, Pittsburgh, Pa., 1997), pp. 905–910.

P. Hohenberg and W. Kohn, “Inhomogeneous electron gas,” Phys. Rev. 136, B864–B871 (1964); W. Kohn and L. J. Sham, “Self-consistent equations including exchange and correlation effects,” Phys. Rev. 140, A1133–A1138 (1965).

[Crossref]

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).

[Crossref]

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).

[Crossref]

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).

[Crossref]

S. N. Rashkeev, S. Limpijumnong, and W. R. L. Lambrecht, “Second-harmonic generation and birefringence of some ternary pnictide semiconductors,” Phys. Rev. B 59, 2737–2748 (1999).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Second-harmonic generation in SiC polytypes,” Phys. Rev. B 57, 9705–9715 (1998).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors,” Phys. Rev. B 57, 3905–3919 (1998).

[Crossref]

S. Limpijumnong, W. R. L. Lambrecht, B. Segall, and K. Kim, “Band structure and cation ordering in LiGaO2,” in III-V Nitrides, F. A. Ponce, T. D. Moustakis, I. Akasaki, and B. A. Monemar, eds., Mater. Res. Soc. Symp. Proc.449 (Materials Research Society, Pittsburgh, Pa., 1997), pp. 905–910.

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Ab initio calculations of second order optical response functions in wurtzite GaN and AlN, and their short period superlattices,” in Nitride Semiconductors, F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, eds., Mater. Res. Soc. Symp. Proc.482 (Materials Research Society, Pittsburgh, Pa., 1998), pp. 857–862.

Z. H. Levine and D. C. Allen, “Optical second-harmonic generation in III-V semiconductors: detailed formulation and computational results,” Phys. Rev. B 44, 12781–12793 (1991).

[Crossref]

S. N. Rashkeev, S. Limpijumnong, and W. R. L. Lambrecht, “Second-harmonic generation and birefringence of some ternary pnictide semiconductors,” Phys. Rev. B 59, 2737–2748 (1999).

[Crossref]

S. Limpijumnong, W. R. L. Lambrecht, B. Segall, and K. Kim, “Band structure and cation ordering in LiGaO2,” in III-V Nitrides, F. A. Ponce, T. D. Moustakis, I. Akasaki, and B. A. Monemar, eds., Mater. Res. Soc. Symp. Proc.449 (Materials Research Society, Pittsburgh, Pa., 1997), pp. 905–910.

M. Marezio, “The crystal structure of LiGaO2,” Acta Crystallogr. 18, 481–484 (1965).

[Crossref]

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc.395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).

[Crossref]

T. Ishii, Y. Tazoh, and S. Miyazawa, “Single-crystal growth of LiGaO2 for a substrate of GaN thin films,” J. Cryst. Growth 186, 409–419 (1998).

[Crossref]

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc.395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).

[Crossref]

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc.395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 µm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).

[Crossref]

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).

[Crossref]

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 µm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).

[Crossref]

S. N. Rashkeev, S. Limpijumnong, and W. R. L. Lambrecht, “Second-harmonic generation and birefringence of some ternary pnictide semiconductors,” Phys. Rev. B 59, 2737–2748 (1999).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Second-harmonic generation in SiC polytypes,” Phys. Rev. B 57, 9705–9715 (1998).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors,” Phys. Rev. B 57, 3905–3919 (1998).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Ab initio calculations of second order optical response functions in wurtzite GaN and AlN, and their short period superlattices,” in Nitride Semiconductors, F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, eds., Mater. Res. Soc. Symp. Proc.482 (Materials Research Society, Pittsburgh, Pa., 1998), pp. 857–862.

D. A. Roberts, “Simplified characterization of uniaxial and biaxial nonlinear optical crystals: a plea for standardization of nomenclature and conventions,” IEEE J. Quantum Electron. 28, 2057–2074 (1992).

[Crossref]

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).

[Crossref]

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 µm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Second-harmonic generation in SiC polytypes,” Phys. Rev. B 57, 9705–9715 (1998).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors,” Phys. Rev. B 57, 3905–3919 (1998).

[Crossref]

S. Limpijumnong, W. R. L. Lambrecht, B. Segall, and K. Kim, “Band structure and cation ordering in LiGaO2,” in III-V Nitrides, F. A. Ponce, T. D. Moustakis, I. Akasaki, and B. A. Monemar, eds., Mater. Res. Soc. Symp. Proc.449 (Materials Research Society, Pittsburgh, Pa., 1997), pp. 905–910.

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Ab initio calculations of second order optical response functions in wurtzite GaN and AlN, and their short period superlattices,” in Nitride Semiconductors, F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, eds., Mater. Res. Soc. Symp. Proc.482 (Materials Research Society, Pittsburgh, Pa., 1998), pp. 857–862.

J. L. P. Hughes and J. E. Sipe, “Calculation of linear and second-order optical response in wurtzite GaN and AlN,” Phys. Rev. B 55, 13630–13640 (1997); “Calculation of second-order optical response in semiconductors,” Phys. Rev. B 53, 10751–10763 (1996).

[Crossref]

C. Aversa and J. E. Sipe, “Nonlinear optical susceptibilities of semiconductors: results with a length-gauge analysis,” Phys. Rev. B 52, 14636–14645 (1995).

[Crossref]

J. E. Sipe and E. Ghahramani, “Nonlinear optical response of semiconductors in the independent-particle approximation,” Phys. Rev. B 48, 11705–11722 (1993).

[Crossref]

G. A. Slack, “Nonmetallic crystals with high thermal conductivity,” J. Phys. Chem. Solids 34, 321–335 (1973).

[Crossref]

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).

[Crossref]

T. Ishii, Y. Tazoh, and S. Miyazawa, “Single-crystal growth of LiGaO2 for a substrate of GaN thin films,” J. Cryst. Growth 186, 409–419 (1998).

[Crossref]

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc.395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

L. Tsang and S.-L. Chuang, “Exciton effects on second-order nonlinear susceptibility in a quantum well with an applied electric field,” Phys. Rev. B 42, 5229–5239 (1990).

[Crossref]

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).

[Crossref]

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).

[Crossref]

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).

[Crossref]

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).

[Crossref]

M. Marezio, “The crystal structure of LiGaO2,” Acta Crystallogr. 18, 481–484 (1965).

[Crossref]

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).

[Crossref]

D. A. Roberts, “Simplified characterization of uniaxial and biaxial nonlinear optical crystals: a plea for standardization of nomenclature and conventions,” IEEE J. Quantum Electron. 28, 2057–2074 (1992).

[Crossref]

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 µm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).

[Crossref]

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).

[Crossref]

T. Ishii, Y. Tazoh, and S. Miyazawa, “Single-crystal growth of LiGaO2 for a substrate of GaN thin films,” J. Cryst. Growth 186, 409–419 (1998).

[Crossref]

G. A. Slack, “Nonmetallic crystals with high thermal conductivity,” J. Phys. Chem. Solids 34, 321–335 (1973).

[Crossref]

Y. Uchiyama, M. Tsuchiya, H.-F. Liu, and T. Kamiya, “Efficient ultraviolet-light (345-nm) generation in a bulk LiIO3 crystal by frequency doubling of a self-seeded gain-switched AlGaInP Fabry–Perot semiconductor laser,” Opt. Lett. 22, 78–80 (1997).

[Crossref]
[PubMed]

S. Wang, V. Pasiskevicisius, F. Laurell, and H. Karlsson, “Ultraviolet generation by first-order frequency doubling in periodically poled KTiOPO4,” Opt. Lett. 23, 1883–1885 (1998).

[Crossref]

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).

[Crossref]

M. Brown, “Increased spectral bandwidths in nonlinear conversion processes by use of multicrystal designs,” Opt. Lett. 23, 1591–1593 (1998).

[Crossref]

P. Hohenberg and W. Kohn, “Inhomogeneous electron gas,” Phys. Rev. 136, B864–B871 (1964); W. Kohn and L. J. Sham, “Self-consistent equations including exchange and correlation effects,” Phys. Rev. 140, A1133–A1138 (1965).

[Crossref]

J. E. Sipe and E. Ghahramani, “Nonlinear optical response of semiconductors in the independent-particle approximation,” Phys. Rev. B 48, 11705–11722 (1993).

[Crossref]

C. Aversa and J. E. Sipe, “Nonlinear optical susceptibilities of semiconductors: results with a length-gauge analysis,” Phys. Rev. B 52, 14636–14645 (1995).

[Crossref]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors,” Phys. Rev. B 57, 3905–3919 (1998).

[Crossref]

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