Abstract

First-principles calculations of the frequency-dependent birefringence, second-harmonic generation, and linear electro-optic response are reported for LiGaO2 (which is transparent to as small as 222 nm). Good agreement is obtained with available experimental data in the visible region of the spectrum. The calculated frequency-dependent nonlinear optical responses are surprisingly constant in the entire energy region below the gap and small in absolute value (of the order of 0.2–1.2 pm/V for the various structures considered). Although the birefringence is insufficient for second-harmonic generation into the ultraviolet, opportunities may exist for sum-frequency generation. Angular phase-matching tuning curves are provided. The reasons for the low values of χ(2) are discussed. It is found to be not very sensitive to the structure and to arise in part from a large degree of cancellation between pure interband and mixed intra- and interband contributions.

© 1999 Optical Society of America

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    [CrossRef]
  2. M. Brown, “Increased spectral bandwidths in nonlinear conversion processes by use of multicrystal designs,” Opt. Lett. 23, 1591–1593 (1998).
    [CrossRef]
  3. B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).
    [CrossRef]
  4. Y. Uchiyama, M. Tsuchiya, H.-F. Liu, and T. Kamiya, “Efficient ultraviolet-light (345-nm) generation in a bulk LiIO3 crystal by frequency doubling of a self-seeded gain-switched AlGaInP Fabry–Perot semiconductor laser,” Opt. Lett. 22, 78–80 (1997).
    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef]
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  17. L. Tsang and S.-L. Chuang, “Exciton effects on second-order nonlinear susceptibility in a quantum well with an applied electric field,” Phys. Rev. B 42, 5229–5239 (1990).
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  18. S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Second-harmonic generation in SiC polytypes,” Phys. Rev. B 57, 9705–9715 (1998).
    [CrossRef]
  19. S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Ab initio calculations of second order optical response functions in wurtzite GaN and AlN, and their short period superlattices,” in Nitride Semiconductors, F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, eds., Mater. Res. Soc. Symp. Proc. 482 (Materials Research Society, Pittsburgh, Pa., 1998), pp. 857–862.
  20. S. N. Rashkeev, S. Limpijumnong, and W. R. L. Lambrecht, “Second-harmonic generation and birefringence of some ternary pnictide semiconductors,” Phys. Rev. B 59, 2737–2748 (1999).
    [CrossRef]
  21. O. K. Andersen, “Linear methods in band theory,” Phys. Rev. B 12, 3060–3083 (1975).
    [CrossRef]
  22. J. L. P. Hughes and J. E. Sipe, “Calculation of linear and second-order optical response in wurtzite GaN and AlN,” Phys. Rev. B 55, 13630–13640 (1997); “Calculation of second-order optical response in semiconductors,” Phys. Rev. B 53, 10751–10763 (1996).
    [CrossRef]
  23. M. Marezio, “The crystal structure of LiGaO2,” Acta Crystallogr. 18, 481–484 (1965).
    [CrossRef]
  24. D. A. Roberts, “Simplified characterization of uniaxial and biaxial nonlinear optical crystals: a plea for standardization of nomenclature and conventions,” IEEE J. Quantum Electron. 28, 2057–2074 (1992).
    [CrossRef]
  25. P. V. Lenzo, E. G. Spencer, and J. P. Remeika, “Some optical properties of lithium gallium oxide,” Appl. Opt. 4, 1036–1037 (1965).
    [CrossRef]
  26. D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 μm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).
    [CrossRef]

1999 (1)

S. N. Rashkeev, S. Limpijumnong, and W. R. L. Lambrecht, “Second-harmonic generation and birefringence of some ternary pnictide semiconductors,” Phys. Rev. B 59, 2737–2748 (1999).
[CrossRef]

1998 (6)

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Second-harmonic generation in SiC polytypes,” Phys. Rev. B 57, 9705–9715 (1998).
[CrossRef]

K. Kondo, M. Oka, H. Wada, T. Fukui, N. Umezu, K. Tatsuki, and S. Kubota, “Demonstration of long-term reliability of a 266-nm, continuous-wave, frequency-quadrupled solid-state laser using β-BaB2O4,” Opt. Lett. 23, 195–197 (1998).
[CrossRef]

M. Brown, “Increased spectral bandwidths in nonlinear conversion processes by use of multicrystal designs,” Opt. Lett. 23, 1591–1593 (1998).
[CrossRef]

S. Wang, V. Pasiskevicisius, F. Laurell, and H. Karlsson, “Ultraviolet generation by first-order frequency doubling in periodically poled KTiOPO4,” Opt. Lett. 23, 1883–1885 (1998).
[CrossRef]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors,” Phys. Rev. B 57, 3905–3919 (1998).
[CrossRef]

T. Ishii, Y. Tazoh, and S. Miyazawa, “Single-crystal growth of LiGaO2 for a substrate of GaN thin films,” J. Cryst. Growth 186, 409–419 (1998).
[CrossRef]

1997 (2)

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).
[CrossRef]

Y. Uchiyama, M. Tsuchiya, H.-F. Liu, and T. Kamiya, “Efficient ultraviolet-light (345-nm) generation in a bulk LiIO3 crystal by frequency doubling of a self-seeded gain-switched AlGaInP Fabry–Perot semiconductor laser,” Opt. Lett. 22, 78–80 (1997).
[CrossRef] [PubMed]

1995 (2)

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 μm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).
[CrossRef]

C. Aversa and J. E. Sipe, “Nonlinear optical susceptibilities of semiconductors: results with a length-gauge analysis,” Phys. Rev. B 52, 14636–14645 (1995).
[CrossRef]

1994 (1)

R. Atanasov, F. Bassani, and V. M. Agranovich, “Second-order nonlinear optical susceptibility of asymmetric quantum wells,” Phys. Rev. B 50, 7809–7819 (1994).
[CrossRef]

1993 (1)

J. E. Sipe and E. Ghahramani, “Nonlinear optical response of semiconductors in the independent-particle approximation,” Phys. Rev. B 48, 11705–11722 (1993).
[CrossRef]

1992 (1)

D. A. Roberts, “Simplified characterization of uniaxial and biaxial nonlinear optical crystals: a plea for standardization of nomenclature and conventions,” IEEE J. Quantum Electron. 28, 2057–2074 (1992).
[CrossRef]

1991 (1)

Z. H. Levine and D. C. Allen, “Optical second-harmonic generation in III-V semiconductors: detailed formulation and computational results,” Phys. Rev. B 44, 12781–12793 (1991).
[CrossRef]

1990 (1)

L. Tsang and S.-L. Chuang, “Exciton effects on second-order nonlinear susceptibility in a quantum well with an applied electric field,” Phys. Rev. B 42, 5229–5239 (1990).
[CrossRef]

1975 (1)

O. K. Andersen, “Linear methods in band theory,” Phys. Rev. B 12, 3060–3083 (1975).
[CrossRef]

1973 (1)

G. A. Slack, “Nonmetallic crystals with high thermal conductivity,” J. Phys. Chem. Solids 34, 321–335 (1973).
[CrossRef]

1970 (1)

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).
[CrossRef]

1965 (2)

Agranovich, V. M.

R. Atanasov, F. Bassani, and V. M. Agranovich, “Second-order nonlinear optical susceptibility of asymmetric quantum wells,” Phys. Rev. B 50, 7809–7819 (1994).
[CrossRef]

Allen, D. C.

Z. H. Levine and D. C. Allen, “Optical second-harmonic generation in III-V semiconductors: detailed formulation and computational results,” Phys. Rev. B 44, 12781–12793 (1991).
[CrossRef]

Andersen, O. K.

O. K. Andersen, “Linear methods in band theory,” Phys. Rev. B 12, 3060–3083 (1975).
[CrossRef]

Atanasov, R.

R. Atanasov, F. Bassani, and V. M. Agranovich, “Second-order nonlinear optical susceptibility of asymmetric quantum wells,” Phys. Rev. B 50, 7809–7819 (1994).
[CrossRef]

Aversa, C.

C. Aversa and J. E. Sipe, “Nonlinear optical susceptibilities of semiconductors: results with a length-gauge analysis,” Phys. Rev. B 52, 14636–14645 (1995).
[CrossRef]

Bassani, F.

R. Atanasov, F. Bassani, and V. M. Agranovich, “Second-order nonlinear optical susceptibility of asymmetric quantum wells,” Phys. Rev. B 50, 7809–7819 (1994).
[CrossRef]

Beier, B.

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).
[CrossRef]

Boller, K.-J.

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).
[CrossRef]

Bond, W. L.

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).
[CrossRef]

Brown, M.

Chai, B. H. T.

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc. 395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

Cheng, T. S.

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc. 395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

Chuang, S.-L.

L. Tsang and S.-L. Chuang, “Exciton effects on second-order nonlinear susceptibility in a quantum well with an applied electric field,” Phys. Rev. B 42, 5229–5239 (1990).
[CrossRef]

Fischer, D. W.

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 μm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).
[CrossRef]

Foxon, C. T.

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc. 395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

Fukui, T.

Gallagher, H.

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc. 395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

Ghahramani, E.

J. E. Sipe and E. Ghahramani, “Nonlinear optical response of semiconductors in the independent-particle approximation,” Phys. Rev. B 48, 11705–11722 (1993).
[CrossRef]

Henderson, B.

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc. 395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

Ishii, T.

T. Ishii, Y. Tazoh, and S. Miyazawa, “Single-crystal growth of LiGaO2 for a substrate of GaN thin films,” J. Cryst. Growth 186, 409–419 (1998).
[CrossRef]

Kamiya, T.

Karlsson, H.

Kim, K.

S. Limpijumnong, W. R. L. Lambrecht, B. Segall, and K. Kim, “Band structure and cation ordering in LiGaO2,” in III-V Nitrides, F. A. Ponce, T. D. Moustakis, I. Akasaki, and B. A. Monemar, eds., Mater. Res. Soc. Symp. Proc. 449 (Materials Research Society, Pittsburgh, Pa., 1997), pp. 905–910.

Kolb, E. D.

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).
[CrossRef]

Kondo, K.

Kubota, S.

Lambrecht, W. R. L.

S. N. Rashkeev, S. Limpijumnong, and W. R. L. Lambrecht, “Second-harmonic generation and birefringence of some ternary pnictide semiconductors,” Phys. Rev. B 59, 2737–2748 (1999).
[CrossRef]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Second-harmonic generation in SiC polytypes,” Phys. Rev. B 57, 9705–9715 (1998).
[CrossRef]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors,” Phys. Rev. B 57, 3905–3919 (1998).
[CrossRef]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Ab initio calculations of second order optical response functions in wurtzite GaN and AlN, and their short period superlattices,” in Nitride Semiconductors, F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, eds., Mater. Res. Soc. Symp. Proc. 482 (Materials Research Society, Pittsburgh, Pa., 1998), pp. 857–862.

S. Limpijumnong, W. R. L. Lambrecht, B. Segall, and K. Kim, “Band structure and cation ordering in LiGaO2,” in III-V Nitrides, F. A. Ponce, T. D. Moustakis, I. Akasaki, and B. A. Monemar, eds., Mater. Res. Soc. Symp. Proc. 449 (Materials Research Society, Pittsburgh, Pa., 1997), pp. 905–910.

Laurell, F.

Lenzo, P. V.

Levine, Z. H.

Z. H. Levine and D. C. Allen, “Optical second-harmonic generation in III-V semiconductors: detailed formulation and computational results,” Phys. Rev. B 44, 12781–12793 (1991).
[CrossRef]

Limpijumnong, S.

S. N. Rashkeev, S. Limpijumnong, and W. R. L. Lambrecht, “Second-harmonic generation and birefringence of some ternary pnictide semiconductors,” Phys. Rev. B 59, 2737–2748 (1999).
[CrossRef]

S. Limpijumnong, W. R. L. Lambrecht, B. Segall, and K. Kim, “Band structure and cation ordering in LiGaO2,” in III-V Nitrides, F. A. Ponce, T. D. Moustakis, I. Akasaki, and B. A. Monemar, eds., Mater. Res. Soc. Symp. Proc. 449 (Materials Research Society, Pittsburgh, Pa., 1997), pp. 905–910.

Liu, H.-F.

Marezio, M.

M. Marezio, “The crystal structure of LiGaO2,” Acta Crystallogr. 18, 481–484 (1965).
[CrossRef]

Middleton, P. G.

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc. 395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

Miller, R. C.

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).
[CrossRef]

Miyazawa, S.

T. Ishii, Y. Tazoh, and S. Miyazawa, “Single-crystal growth of LiGaO2 for a substrate of GaN thin films,” J. Cryst. Growth 186, 409–419 (1998).
[CrossRef]

Nicholls, J. F. H.

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc. 395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

Nordland, W. A.

R. C. Miller, W. A. Nordland, E. D. Kolb, and W. L. Bond, “Nonlinear optical properties of lithium gallium oxide,” J. Appl. Phys. 41, 3008–3011 (1970).
[CrossRef]

O’Donnell, L. P.

J. F. H. Nicholls, H. Gallagher, B. Henderson, C. Trager-Cowan, P. G. Middleton, L. P. O’Donnell, T. S. Cheng, C. T. Foxon, and B. H. T. Chai, “Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates,” in Gallium Nitride and Related Materials, F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, eds., Mater. Res. Soc. Symp. Proc. 395 (Materials Research Society, Pittsburgh, Pa., 1996), pp. 535–539.

Ohmer, M. C.

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 μm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).
[CrossRef]

Oka, M.

Pasiskevicisius, V.

Pollak, T. M.

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 μm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).
[CrossRef]

Rashkeev, S. N.

S. N. Rashkeev, S. Limpijumnong, and W. R. L. Lambrecht, “Second-harmonic generation and birefringence of some ternary pnictide semiconductors,” Phys. Rev. B 59, 2737–2748 (1999).
[CrossRef]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Second-harmonic generation in SiC polytypes,” Phys. Rev. B 57, 9705–9715 (1998).
[CrossRef]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors,” Phys. Rev. B 57, 3905–3919 (1998).
[CrossRef]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Ab initio calculations of second order optical response functions in wurtzite GaN and AlN, and their short period superlattices,” in Nitride Semiconductors, F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, eds., Mater. Res. Soc. Symp. Proc. 482 (Materials Research Society, Pittsburgh, Pa., 1998), pp. 857–862.

Remeika, J. P.

Roberts, D. A.

D. A. Roberts, “Simplified characterization of uniaxial and biaxial nonlinear optical crystals: a plea for standardization of nomenclature and conventions,” IEEE J. Quantum Electron. 28, 2057–2074 (1992).
[CrossRef]

Scheidt, M.

B. Beier, D. Woll, M. Scheidt, K.-J. Boller, and R. Wallenstein, “Second harmonic generation of the output of an AlGaAs diode oscillator amplifier system in critically phase matched LiB2O5 and β-BaB2O4,” Appl. Phys. Lett. 71, 315–317 (1997).
[CrossRef]

Schunemann, P. G.

D. W. Fischer, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, “Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 μm using polarized light interference,” J. Appl. Phys. 77, 5942–5945 (1995).
[CrossRef]

Segall, B.

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors,” Phys. Rev. B 57, 3905–3919 (1998).
[CrossRef]

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Second-harmonic generation in SiC polytypes,” Phys. Rev. B 57, 9705–9715 (1998).
[CrossRef]

S. Limpijumnong, W. R. L. Lambrecht, B. Segall, and K. Kim, “Band structure and cation ordering in LiGaO2,” in III-V Nitrides, F. A. Ponce, T. D. Moustakis, I. Akasaki, and B. A. Monemar, eds., Mater. Res. Soc. Symp. Proc. 449 (Materials Research Society, Pittsburgh, Pa., 1997), pp. 905–910.

S. N. Rashkeev, W. R. L. Lambrecht, and B. Segall, “Ab initio calculations of second order optical response functions in wurtzite GaN and AlN, and their short period superlattices,” in Nitride Semiconductors, F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, eds., Mater. Res. Soc. Symp. Proc. 482 (Materials Research Society, Pittsburgh, Pa., 1998), pp. 857–862.

Sipe, J. E.

C. Aversa and J. E. Sipe, “Nonlinear optical susceptibilities of semiconductors: results with a length-gauge analysis,” Phys. Rev. B 52, 14636–14645 (1995).
[CrossRef]

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[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

zzz, zyy (yzy), and zxx (xzx) SHG components for natural LiGaO2. Only the real part of the response function χ(2)(-2ω, ω, ω) is shown.

Fig. 2
Fig. 2

Decomposition of the imaginary part of χ(2) in its inter- and intraband contributions for the type-II phase-matchable yzy component.

Fig. 3
Fig. 3

Calculated refraction indices polarized along the three main axes of the natural orthorhombic LiGaO2.

Fig. 4
Fig. 4

Phase-matching angle Θpm (measured from the y axis) for eoe SFG for a family of curves for different hν1 (e ray) as function of the o-ray frequency hν2. Conversion to wavelength λ is included for convenience.

Fig. 5
Fig. 5

zzz, zyy, (yzy), and zxx (xzx) LEO components (only the electronic part of the response function) for natural LiGaO2. Only the real part of χ(2)(-ω, ω, 0) is shown.

Tables (2)

Tables Icon

Table 1 Second-Harmonic Generation Coefficients of LiGaO2 in the Static Limit (in pm/V)

Tables Icon

Table 2 Inter- and Intraband Contributions to the Static Values of χ(2) (in pm/V)

Equations (10)

Equations on this page are rendered with MathJax. Learn more.

χabc(ω)=χabcee(ω)+χabcei(ω),
χabcee(ω)=C2nml,k fnmωmn-ωg2ωln-g1ωml+C2nml,kfnlg1(ωln-ω)ωml-flmg2(ωml-ω)ωln,
χabcei(ω)=C2nm,k fnm(ωmn-ω)ωmn22p1-l[ωln(g2+g4)-ωml(g1+g3)]+C2nm,k fnm2(ωmn-ω)2ωmn×(p1-p2)-l[ωln(g1+g3)-ωml(g2+g4)],
p1=iΔmnarmnbrmnc,
p2=iΔmncrmnbrmna,
g1=rnmarmlcrlnb,
g2=rnmarmlbrlnc,
g3=rnlarlmcrmnb,
g4=rnlcrlmarmnb.
Δnm=(pnn-pmm)/m

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