Abstract

The infrared emission from an external-cavity-tapered diode laser is frequency doubled in a 5-mm β-BaB2O4 crystal that is placed in a resonant-enhancement cavity. For a coupled diode power of 535 mW, 100 mW of continuous-wave, second-harmonic power is generated at λ=392 nm. The ultraviolet (UV) beam is measured to have a nearly ideal beam-quality parameter, M21, in both meridians even though substantial double refraction is present in the nonlinear crystal. Printing of an array of submicron dots on a phase-change film is demonstrated with this UV beam. Also, by printing on photochemical film we demonstrate that improved film sensitivity is possible when a UV source is used.

© 1999 Optical Society of America

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