Abstract
We check the accuracy of the Kane approximation, relating radiative matrix elements to the conduction-band effective mass. We prove that the Kane approximation is good to better than 1% accuracy in GaAs. Similar accuracy should hold in most applications of the Kane approximation to group iii–iv and group iv semiconductors.
© 1998 Optical Society of America
Full Article |
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Figures (1)
You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Equations (24)
You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription