The luminescence of a neodymium-doped arsenic trisulfide planar waveguide at 1083 nm is reported. The dopant was introduced into the chalcogenide glass by ion implantation. The dopant distribution following ion implantation was predicted by molecular dynamic simulation and measured by Rutherford backscattering spectrometry. The most efficient pump wavelength was determined to be 818 nm. This observation of luminescence from rare-earth-ion implantation into chalcogenide glass, for the first time to the authors’ knowledge, suggests that this technique can be useful for rare-earth-doped devices.
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