## Abstract

The second-order susceptibilities $({d}_{\mathit{ij}})$ of both ordered and disordered ${\mathrm{Ga}}_{0.5}{\mathrm{In}}_{0.5}\mathrm{P}$ semiconductor crystal films epitaxially grown on GaAs substrates are analyzed. Quasi-phase matching based on periodic order–disorder regions is proposed, and the analysis shows that three of the four independent coefficients, namely, ${d}_{33}^{\prime},$
${d}_{31}^{\prime},$ and ${d}_{15}^{\prime},$ but not ${d}_{14}^{\prime},$ can be modulated. Maker-fringe experiments were performed at 1.57 *µ*m to measure these coefficients in the deposited crystals. However, the crystal-film orientation allowed a definitive determination of the ${d}_{14}^{\prime}$ coefficient (110 pm/V) only and an upper limit of 60 pm/V for ${d}_{33}^{\prime}.$ More-sophisticated experimental techniques are proposed for measuring ${d}_{33}^{\prime}.$

© 1997 Optical Society of America

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