A. Moritz, R. Wirth, C. Geng, F. Scholz, and A. Hangleiter, “Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers,” Appl. Phys. Lett. 68, 1217–1219 (1996).

[CrossRef]

Y. Kostoulas, K. B. Ucer, G. W. Wicks, and P. M. Fauchet, “Femtosecond carrier dynamics in low-temperature grown Ga_{0.5}In_{0.5}P,” Appl. Phys. Lett. 67, 3756–3758 (1995).

[CrossRef]

See, e.g., L. E. Myers, R. C. Eckardt, M. M. Fejer, R. L. Beyer, W. R. Bosenberg, and J. W. Pierce, “Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_{3},” J. Opt. Soc. Am. B 12, 2102–2116 (1995).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Schweizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

G. I. Stegeman, M. Sheik-Bahae, E. Van Stryland, and G. Assanto, “Large nonlinear phase shifts in second-order nonlinear-optical processes,” Opt. Lett. 18, 13–15 (1993).

[CrossRef]
[PubMed]

M. L. Sundheimer, Ch. Bosshard, E. W. Van Stryland, G. I. Stegeman, and J. D. Bierlein, “Large nonlinear phase modulation in quasi-phase-matched KTP waveguides as a result of cascaded second-order processes,” Opt. Lett. 18, 1397–1399 (1993).

[CrossRef]
[PubMed]

Y. Ueno, H. Fujii, H. Sawano, K. Kobayashi, K. Hara, A. Gomyo, and K. Endo, “30-mW 690-nm high-power strained-quantum-well AlGaInP laser,” IEEE J. Quantum Electron. 29, 1851–1856 (1993).

[CrossRef]

E. Ghahramani, D. J. Moss, and J. E. Sipe, “Full-band-structure calculation of first-, second-, and third-harmonic optical response coefficients of ZnSe, ZnTe, and CdTe,” Phys. Rev. B 43, 9700–9710 (1991).

[CrossRef]

T. Kurimoto and N. Hamada, “Electronic structure of the (GaP)_{1}/(InP)_{1} (111) strained-layer superlattice,” Phys. Rev. 40, 3889–3895 (1989).

[CrossRef]

A. Mascarenhas, S. Kurtz, A. Kibbler, and J. M. Olson, “Polarized band-edge photoluminescence and ordering in Ga_{0.52}In_{0.48}P,” Phys. Rev. Lett. 63, 2108–2111 (1989).

[CrossRef]
[PubMed]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.49}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

D. E. Aspens, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of Al_{x}Ga_{1−x}As,” J. Appl. Phys. 60, 754–767 (1986).

[CrossRef]

J. Jerphagnon and S. K. Kurtz, “Maker fringes: a detailed comparison of theory and experiment for isotropic and uniaxial crystals,” J. Appl. Phys. 41, 1667–1681 (1970).

[CrossRef]

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.49}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

D. E. Aspens, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of Al_{x}Ga_{1−x}As,” J. Appl. Phys. 60, 754–767 (1986).

[CrossRef]

See, e.g., L. E. Myers, R. C. Eckardt, M. M. Fejer, R. L. Beyer, W. R. Bosenberg, and J. W. Pierce, “Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_{3},” J. Opt. Soc. Am. B 12, 2102–2116 (1995).

[CrossRef]

D. E. Aspens, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of Al_{x}Ga_{1−x}As,” J. Appl. Phys. 60, 754–767 (1986).

[CrossRef]

See, e.g., L. E. Myers, R. C. Eckardt, M. M. Fejer, R. L. Beyer, W. R. Bosenberg, and J. W. Pierce, “Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_{3},” J. Opt. Soc. Am. B 12, 2102–2116 (1995).

[CrossRef]

See, e.g., L. E. Myers, R. C. Eckardt, M. M. Fejer, R. L. Beyer, W. R. Bosenberg, and J. W. Pierce, “Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_{3},” J. Opt. Soc. Am. B 12, 2102–2116 (1995).

[CrossRef]

Y. Ueno, H. Fujii, H. Sawano, K. Kobayashi, K. Hara, A. Gomyo, and K. Endo, “30-mW 690-nm high-power strained-quantum-well AlGaInP laser,” IEEE J. Quantum Electron. 29, 1851–1856 (1993).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Schweizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

Y. Kostoulas, K. B. Ucer, G. W. Wicks, and P. M. Fauchet, “Femtosecond carrier dynamics in low-temperature grown Ga_{0.5}In_{0.5}P,” Appl. Phys. Lett. 67, 3756–3758 (1995).

[CrossRef]

See, e.g., L. E. Myers, R. C. Eckardt, M. M. Fejer, R. L. Beyer, W. R. Bosenberg, and J. W. Pierce, “Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_{3},” J. Opt. Soc. Am. B 12, 2102–2116 (1995).

[CrossRef]

Y. Ueno, H. Fujii, H. Sawano, K. Kobayashi, K. Hara, A. Gomyo, and K. Endo, “30-mW 690-nm high-power strained-quantum-well AlGaInP laser,” IEEE J. Quantum Electron. 29, 1851–1856 (1993).

[CrossRef]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

A. Moritz, R. Wirth, C. Geng, F. Scholz, and A. Hangleiter, “Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers,” Appl. Phys. Lett. 68, 1217–1219 (1996).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Schweizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

E. Ghahramani, D. J. Moss, and J. E. Sipe, “Full-band-structure calculation of first-, second-, and third-harmonic optical response coefficients of ZnSe, ZnTe, and CdTe,” Phys. Rev. B 43, 9700–9710 (1991).

[CrossRef]

Y. Ueno, H. Fujii, H. Sawano, K. Kobayashi, K. Hara, A. Gomyo, and K. Endo, “30-mW 690-nm high-power strained-quantum-well AlGaInP laser,” IEEE J. Quantum Electron. 29, 1851–1856 (1993).

[CrossRef]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

T. Kurimoto and N. Hamada, “Electronic structure of the (GaP)_{1}/(InP)_{1} (111) strained-layer superlattice,” Phys. Rev. 40, 3889–3895 (1989).

[CrossRef]

A. Moritz, R. Wirth, C. Geng, F. Scholz, and A. Hangleiter, “Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers,” Appl. Phys. Lett. 68, 1217–1219 (1996).

[CrossRef]

Y. Ueno, H. Fujii, H. Sawano, K. Kobayashi, K. Hara, A. Gomyo, and K. Endo, “30-mW 690-nm high-power strained-quantum-well AlGaInP laser,” IEEE J. Quantum Electron. 29, 1851–1856 (1993).

[CrossRef]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

J. Jerphagnon and S. K. Kurtz, “Maker fringes: a detailed comparison of theory and experiment for isotropic and uniaxial crystals,” J. Appl. Phys. 41, 1667–1681 (1970).

[CrossRef]

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.49}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

D. E. Aspens, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of Al_{x}Ga_{1−x}As,” J. Appl. Phys. 60, 754–767 (1986).

[CrossRef]

A. Mascarenhas, S. Kurtz, A. Kibbler, and J. M. Olson, “Polarized band-edge photoluminescence and ordering in Ga_{0.52}In_{0.48}P,” Phys. Rev. Lett. 63, 2108–2111 (1989).

[CrossRef]
[PubMed]

Y. Ueno, H. Fujii, H. Sawano, K. Kobayashi, K. Hara, A. Gomyo, and K. Endo, “30-mW 690-nm high-power strained-quantum-well AlGaInP laser,” IEEE J. Quantum Electron. 29, 1851–1856 (1993).

[CrossRef]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

Y. Kostoulas, K. B. Ucer, G. W. Wicks, and P. M. Fauchet, “Femtosecond carrier dynamics in low-temperature grown Ga_{0.5}In_{0.5}P,” Appl. Phys. Lett. 67, 3756–3758 (1995).

[CrossRef]

T. Kurimoto and N. Hamada, “Electronic structure of the (GaP)_{1}/(InP)_{1} (111) strained-layer superlattice,” Phys. Rev. 40, 3889–3895 (1989).

[CrossRef]

A. Mascarenhas, S. Kurtz, A. Kibbler, and J. M. Olson, “Polarized band-edge photoluminescence and ordering in Ga_{0.52}In_{0.48}P,” Phys. Rev. Lett. 63, 2108–2111 (1989).

[CrossRef]
[PubMed]

J. Jerphagnon and S. K. Kurtz, “Maker fringes: a detailed comparison of theory and experiment for isotropic and uniaxial crystals,” J. Appl. Phys. 41, 1667–1681 (1970).

[CrossRef]

D. E. Aspens, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of Al_{x}Ga_{1−x}As,” J. Appl. Phys. 60, 754–767 (1986).

[CrossRef]

A. Mascarenhas, S. Kurtz, A. Kibbler, and J. M. Olson, “Polarized band-edge photoluminescence and ordering in Ga_{0.52}In_{0.48}P,” Phys. Rev. Lett. 63, 2108–2111 (1989).

[CrossRef]
[PubMed]

A. Moritz, R. Wirth, C. Geng, F. Scholz, and A. Hangleiter, “Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers,” Appl. Phys. Lett. 68, 1217–1219 (1996).

[CrossRef]

E. Ghahramani, D. J. Moss, and J. E. Sipe, “Full-band-structure calculation of first-, second-, and third-harmonic optical response coefficients of ZnSe, ZnTe, and CdTe,” Phys. Rev. B 43, 9700–9710 (1991).

[CrossRef]

See, e.g., L. E. Myers, R. C. Eckardt, M. M. Fejer, R. L. Beyer, W. R. Bosenberg, and J. W. Pierce, “Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_{3},” J. Opt. Soc. Am. B 12, 2102–2116 (1995).

[CrossRef]

A. Mascarenhas, S. Kurtz, A. Kibbler, and J. M. Olson, “Polarized band-edge photoluminescence and ordering in Ga_{0.52}In_{0.48}P,” Phys. Rev. Lett. 63, 2108–2111 (1989).

[CrossRef]
[PubMed]

See, e.g., L. E. Myers, R. C. Eckardt, M. M. Fejer, R. L. Beyer, W. R. Bosenberg, and J. W. Pierce, “Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_{3},” J. Opt. Soc. Am. B 12, 2102–2116 (1995).

[CrossRef]

Y. Ueno, H. Fujii, H. Sawano, K. Kobayashi, K. Hara, A. Gomyo, and K. Endo, “30-mW 690-nm high-power strained-quantum-well AlGaInP laser,” IEEE J. Quantum Electron. 29, 1851–1856 (1993).

[CrossRef]

A. Moritz, R. Wirth, C. Geng, F. Scholz, and A. Hangleiter, “Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers,” Appl. Phys. Lett. 68, 1217–1219 (1996).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Schweizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Schweizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

G. I. Stegeman, M. Sheik-Bahae, E. Van Stryland, and G. Assanto, “Large nonlinear phase shifts in second-order nonlinear-optical processes,” Opt. Lett. 18, 13–15 (1993).

[CrossRef]
[PubMed]

R. DeSalvo, D. J. Hagan, M. Sheik-Bahae, G. I. Stegeman, and E. W. Van Stryland, “Self-focusing and self-defocusing by cascaded second-order effects in KTP,” Opt. Lett. 17, 28–30 (1992).

[CrossRef]
[PubMed]

E. Ghahramani, D. J. Moss, and J. E. Sipe, “Full-band-structure calculation of first-, second-, and third-harmonic optical response coefficients of ZnSe, ZnTe, and CdTe,” Phys. Rev. B 43, 9700–9710 (1991).

[CrossRef]

R. Schiek, M. L. Sundheimer, D. Y. Kim, Y. Baek, G. I. Stegeman, H. Seibert, and W. Sohler, “Direct measurement of cascaded nonlinearity in lithium niobate channel waveguides,” Opt. Lett. 19, 1949–1951 (1994).

[CrossRef]
[PubMed]

G. I. Stegeman, M. Sheik-Bahae, E. Van Stryland, and G. Assanto, “Large nonlinear phase shifts in second-order nonlinear-optical processes,” Opt. Lett. 18, 13–15 (1993).

[CrossRef]
[PubMed]

M. L. Sundheimer, Ch. Bosshard, E. W. Van Stryland, G. I. Stegeman, and J. D. Bierlein, “Large nonlinear phase modulation in quasi-phase-matched KTP waveguides as a result of cascaded second-order processes,” Opt. Lett. 18, 1397–1399 (1993).

[CrossRef]
[PubMed]

R. DeSalvo, D. J. Hagan, M. Sheik-Bahae, G. I. Stegeman, and E. W. Van Stryland, “Self-focusing and self-defocusing by cascaded second-order effects in KTP,” Opt. Lett. 17, 28–30 (1992).

[CrossRef]
[PubMed]

R. Schiek, M. L. Sundheimer, D. Y. Kim, Y. Baek, G. I. Stegeman, H. Seibert, and W. Sohler, “Direct measurement of cascaded nonlinearity in lithium niobate channel waveguides,” Opt. Lett. 19, 1949–1951 (1994).

[CrossRef]
[PubMed]

M. L. Sundheimer, Ch. Bosshard, E. W. Van Stryland, G. I. Stegeman, and J. D. Bierlein, “Large nonlinear phase modulation in quasi-phase-matched KTP waveguides as a result of cascaded second-order processes,” Opt. Lett. 18, 1397–1399 (1993).

[CrossRef]
[PubMed]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.49}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

Y. Kostoulas, K. B. Ucer, G. W. Wicks, and P. M. Fauchet, “Femtosecond carrier dynamics in low-temperature grown Ga_{0.5}In_{0.5}P,” Appl. Phys. Lett. 67, 3756–3758 (1995).

[CrossRef]

Y. Ueno, H. Fujii, H. Sawano, K. Kobayashi, K. Hara, A. Gomyo, and K. Endo, “30-mW 690-nm high-power strained-quantum-well AlGaInP laser,” IEEE J. Quantum Electron. 29, 1851–1856 (1993).

[CrossRef]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

M. L. Sundheimer, Ch. Bosshard, E. W. Van Stryland, G. I. Stegeman, and J. D. Bierlein, “Large nonlinear phase modulation in quasi-phase-matched KTP waveguides as a result of cascaded second-order processes,” Opt. Lett. 18, 1397–1399 (1993).

[CrossRef]
[PubMed]

R. DeSalvo, D. J. Hagan, M. Sheik-Bahae, G. I. Stegeman, and E. W. Van Stryland, “Self-focusing and self-defocusing by cascaded second-order effects in KTP,” Opt. Lett. 17, 28–30 (1992).

[CrossRef]
[PubMed]

Y. Kostoulas, K. B. Ucer, G. W. Wicks, and P. M. Fauchet, “Femtosecond carrier dynamics in low-temperature grown Ga_{0.5}In_{0.5}P,” Appl. Phys. Lett. 67, 3756–3758 (1995).

[CrossRef]

A. Moritz, R. Wirth, C. Geng, F. Scholz, and A. Hangleiter, “Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers,” Appl. Phys. Lett. 68, 1217–1219 (1996).

[CrossRef]

A. Moritz, R. Wirth, C. Geng, F. Scholz, and A. Hangleiter, “Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers,” Appl. Phys. Lett. 68, 1217–1219 (1996).

[CrossRef]

Y. Kostoulas, K. B. Ucer, G. W. Wicks, and P. M. Fauchet, “Femtosecond carrier dynamics in low-temperature grown Ga_{0.5}In_{0.5}P,” Appl. Phys. Lett. 67, 3756–3758 (1995).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Schweizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

Y. Ueno, H. Fujii, H. Sawano, K. Kobayashi, K. Hara, A. Gomyo, and K. Endo, “30-mW 690-nm high-power strained-quantum-well AlGaInP laser,” IEEE J. Quantum Electron. 29, 1851–1856 (1993).

[CrossRef]

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.49}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

D. E. Aspens, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of Al_{x}Ga_{1−x}As,” J. Appl. Phys. 60, 754–767 (1986).

[CrossRef]

J. Jerphagnon and S. K. Kurtz, “Maker fringes: a detailed comparison of theory and experiment for isotropic and uniaxial crystals,” J. Appl. Phys. 41, 1667–1681 (1970).

[CrossRef]

See, e.g., L. E. Myers, R. C. Eckardt, M. M. Fejer, R. L. Beyer, W. R. Bosenberg, and J. W. Pierce, “Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_{3},” J. Opt. Soc. Am. B 12, 2102–2116 (1995).

[CrossRef]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino, “Nonexistence of long-range order in Ga_{0.5}In_{0.5}P epitaxial layers grown on (111)B and (110)GaAs substrates,” Jpn. J. Appl. Phys. 27, L2370–L2372 (1988).

[CrossRef]

R. DeSalvo, D. J. Hagan, M. Sheik-Bahae, G. I. Stegeman, and E. W. Van Stryland, “Self-focusing and self-defocusing by cascaded second-order effects in KTP,” Opt. Lett. 17, 28–30 (1992).

[CrossRef]
[PubMed]

G. I. Stegeman, M. Sheik-Bahae, E. Van Stryland, and G. Assanto, “Large nonlinear phase shifts in second-order nonlinear-optical processes,” Opt. Lett. 18, 13–15 (1993).

[CrossRef]
[PubMed]

M. L. Sundheimer, Ch. Bosshard, E. W. Van Stryland, G. I. Stegeman, and J. D. Bierlein, “Large nonlinear phase modulation in quasi-phase-matched KTP waveguides as a result of cascaded second-order processes,” Opt. Lett. 18, 1397–1399 (1993).

[CrossRef]
[PubMed]

R. Schiek, M. L. Sundheimer, D. Y. Kim, Y. Baek, G. I. Stegeman, H. Seibert, and W. Sohler, “Direct measurement of cascaded nonlinearity in lithium niobate channel waveguides,” Opt. Lett. 19, 1949–1951 (1994).

[CrossRef]
[PubMed]

T. Kurimoto and N. Hamada, “Electronic structure of the (GaP)_{1}/(InP)_{1} (111) strained-layer superlattice,” Phys. Rev. 40, 3889–3895 (1989).

[CrossRef]

E. Ghahramani, D. J. Moss, and J. E. Sipe, “Full-band-structure calculation of first-, second-, and third-harmonic optical response coefficients of ZnSe, ZnTe, and CdTe,” Phys. Rev. B 43, 9700–9710 (1991).

[CrossRef]

A. Mascarenhas, S. Kurtz, A. Kibbler, and J. M. Olson, “Polarized band-edge photoluminescence and ordering in Ga_{0.52}In_{0.48}P,” Phys. Rev. Lett. 63, 2108–2111 (1989).

[CrossRef]
[PubMed]

H. Fujii, Y. Ueno, A. Gomyo, K. Endo, and T. Suzuki, “Observation of stripe-direction dependence of threshold current density for AlGaInP laser diodes with CuPt-type natural superlattice in Ga_{0.5}In_{0.5}P active layer,” Appl. Phys. Lett. 61, 737–739 (1992); Y. Ueno, “Oscillator strength enhancement for [110]-polarized light in compressively strained GaInP ordered crystals used in AlGaInP laser,” Appl. Phys. Lett. 62, 553–555 (1993).

[CrossRef]

Y. Ueno, K. Endo, H. Fujii, K. Kobayashi, K. Hara, and T. Yuasa, “Continuous-wave high-power (75 mW) operation of a transverse-mode stabilized window structure 680-nm AlGaInP visible laser diode,” Electron. Lett. 26, 1726–1727 (1990); Y. Hämisch, R. Steffen, P. Röntgen, and A. Forchel, “Implantation induced order-disorder transition in Ga_{0.52}In_{0.48}P/(Al_{0.35}Ga_{0.65})_{0.5}In_{0.5}P heterostructures,” Jpn. J.Appl. Phys. 32, L1492–L1495 (1993).

[CrossRef]

Y. Ueno, V. Ricci, and G. I. Stegeman, “Phase-matchable second-order susceptibility of GaInP crystals at 1.5-μm,” 7th Topical Meeting of the European Optical Society, Vol. 7 of EOS Topical Meetings Digest Series (European Optical Society, Orsay, France, 1996), pp. 185–186; V. Ricci, Y. Ueno, and G. I. Stegeman, “Measurement of the second-order susceptibility of GaInP films at 1.5 μm,” in Quantum Electronics and Laser Science Conference (QELS’96), Vol. 10 of 1996 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1996), pp. 21–22.

S. Singh, “Second-harmonic coefficients,” in CRC Handbook of Laser Science and Technology, M. J. Weber, ed. (CRC Press, Boca Raton, Fla., 1986), Vol. 3, Part 1, p. 88, Table 1.1.16.

J. Khurgin, “Second-order nonlinear effects in asymmetric quantum-well structures,” Phys. Rev. B 38, 4056–4066 (1988); C. Kelaidis, D. C. Hutchings, and J. M. Arnold, “Asymmetric two-step GaAlAs quantum well for cascaded second-order processes,” IEEE J. Quantum Electron. 30, 2998–3005 (1994).

[CrossRef]

M. J. Angell, R. M. Emerson, J. L. Hoyt, J. F. Gibbons, L. A. Eyres, M. L. Bortz, and M. M. Fejer, “Growth of alternating 〈100〉/〈111〉-oriented II–VI regions for quasi-phase-matched nonlinear optical devices on GaAs substrates,” Appl. Phys. Lett. 64, 3107–3109 (1994); S. J. Yoo, R. Bhat, C. Caneau, and M. A. Koza, “Quasi-phase-matched second-harmonic generation in AlGaAs waveguides with periodic domain inversion achieved by wafer-bonding,” Appl. Phys. Lett. 66, 3410–3412 (1995).

[CrossRef]

A. Gomyo, T. Suzuki, and S. Iijima, “Observation of strong ordering in Ga_{x}In_{1−x}P alloy semiconductors,” Phys. Rev. Lett. 60, 2645–2648 (1988); A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, and I. Hino, “Evidence for the existence of an ordered state in Ga_{0.5}In_{0.5}P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy,” Appl. Phys. Lett. 50, 673–675 (1987); O. Ueda, M. Takikawa, J. Komeno, and I. Umebu, “Atomic structure of ordered InGaP crystals on (0, 0, 1) GaAs substrates by metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. JAPNDE 26, L1824–L1827 (1987).

[CrossRef]
[PubMed]

See, e.g., F. A. Hopf and G. I. Stegeman, Applied Classical Electrodynamics (Wiley, New York, 1986), Vol. 2, p. 14; R. W. Boyd, Nonlinear Optics (Academic, Boston, 1992), p. 46.

T_{d} crystals have three IC_{4} axes and four C_{3} axes. Because of the Ga–In ordering, ordered GaInP loses all IC_{4} axes and three of the four C_{3} axes, which causes symmetry breakdown to C_{3ν}.

In a few measurements we observed sharp Fabry–Perot fringes corresponding to the distance of 150 μm between GaInP and GaAs surfaces, in addition to Maker fringes, which correspond to the GaInP thickness of 1.2 μm. In most of our measurements, however, the fundamental lights are believed to be incoherently multireflected between GaInP and GaAs surfaces.

Domain-mixed ordered GaInP crystal has been used as the active layer for the above-mentioned red lasers in Ref. 10. Thus the domain-mixed crystal is supposed to be stable, even under a high-density carrier injection of approximately 2 kA/cm^{2}.

The volume of the one domain equals that of the other, because these two domains are equivalent with respect to the (001) surface. In contrast, the one domain dominates the other when grown on surfaces tilted from (001). Refer to A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, H. Hotta, and I. Hino, “Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga_{0.5}In_{0.5}P,” NEC Res. Dev. 35, 134–143 (1994).

C_{3ν} GaInP has one C_{3} axis and three σ_{ν} planes for symmetry operations. The average owing to the domain mixture causes the crystal to lose the C_{3} axis and two of the three σ_{ν} planes and to gain a new (1¯, 1, 0) σ_{ν} plane and one [0, 0, 1] C_{2} axis. The (1, 1, 0) σ_{ν} plane remains. Consequently, a set of symmetry operations with one C_{2} axis and two σ_{ν} planes corresponds to the C_{2ν} symmetry.

V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, eds., Handbook of Nonlinear Optical Crystals (Springer-Verlag, Berlin, 1991).