Abstract

We determine the differential refractive-index spectra and the spectral dependence of the α parameter of mode-locked external-cavity semiconductor lasers by analyzing the spectral and temporal dynamics of the residual Fabry–Perot modes present in the temporal-gain spectra, which are measured by an electrical-pump–optical-probe technique. The influence of material and resonator contributions on chirp and pulsewidth performances are discussed.

© 1997 Optical Society of America

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  1. J. Manning, R. Olshansky, and Ch. B. Su, “The carrier-induced index change in AlGaAs and 1.3 μm InGaAsP diodelasers,” IEEE J. Quantum Electron. QE-19, 1525 (1983).
    [CrossRef]
  2. N. K. Dutta, N. A. Olsson, and W. T. Tsang, “Carrier induced refractive index change in AlGaAs quantum well lasers,” Appl. Phys. Lett. 45, 836 (1984).
    [CrossRef]
  3. P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
    [CrossRef]
  4. P. Vasil'ev, “Ultrashort pulse generation in diode lasers,” Opt. Quantum Electron. 24, 801 (1992).
    [CrossRef]
  5. M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
    [CrossRef]
  6. M. Hofmann, Ph.D. dissertation (Philipp University, Marburg, Germany, 1994).
  7. P. Miltenyi, M. Koch, M. Hofmann, H. Jung, and W. Elsäβer, “Spectrally and temporally resolved gain dynamics in mode locked semiconductorlasers,” Appl. Phys. Lett. 70, 1506 (1997).
    [CrossRef]
  8. Th. Elsässer, J. Shah, L. Rota, and P. Lugli, “Initial thermalization of photoexcited carriers in GaAs studies byfemtosecond luminescence spectroscopy,” Phys. Rev. Lett. 66, 1757 (1991).
    [CrossRef]
  9. W. Z. Lin, J. G. Fujimoto, and E. P. Ippen, “Femtosecond dynamics of highly excited carriers in AlxGa1−xAs,” Appl. Phys. Lett. 51, 161 (1987).
    [CrossRef]
  10. G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses insemiconductor laser amplifiers,” IEEE J. Quantum Electron. QE-25, 2297 (1989).
    [CrossRef]
  11. G. P. Agrawal and N. K. Dutta, Long-WavelengthSemiconductor Lasers (Van Nostrand Reinhold, New York, 1986).
  12. P. Vasil'ev, Ultrafast Diode Lasers(Artech House, Boston, 1995).
  13. J. Kuhl, M. Serenyi, and E. O. Göbel, “Bandwidth-limited picosecond pulse generation in an actively mode-lockedGaAs laser with intracavity chirp compensation,” Opt. Lett. 12, 334 (1987).
    [CrossRef] [PubMed]
  14. D. M. Bird, R. M. Fatah, M. K. Cox, P. D. Constantine, J. C. Regnault, and K. H. Cameron, “Miniature packaged actively mode-locked semiconductor laser with tunable20 ps transform limited pulses,” Electron. Lett. 26, 2086 (1990).
    [CrossRef]
  15. W. W. Chow, S. W. Koch, M. Sargent III, Semiconductor Laser Physics (Springer-Verlag, Berlin, 1994).
  16. C. K. Sun, H. K. Choi, C. A. Wang, and J. G. Fujimoto, “Studies of carrier heating in InGaAs/AlGaAs strained-layer quantumwell lasers using a multiple wavelength pump probe technique,” Appl. Phys. Lett. 62, 747 (1992).
    [CrossRef]
  17. K. L. Hall, J. Mark, E. P. Ippen, G. Eisenstein, “Femtosecond gain dynamics in InGaAsP optical amplifiers,” Appl. Phys. Lett. 56, 1740 (1990).
    [CrossRef]
  18. J. Mark and J. Mork, “Subpicosecond gain dynamics in InGaAsP opical amplifiers: experimentand theory,” Appl. Phys. Lett. 61, 2281 (1992).
    [CrossRef]
  19. A. Girndt, A. Knorr, M. Hofmann, and S. W. Koch, “Theoretical analysis of ultrafast pump-probe experiments in semiconductoramplifiers,” Appl. Phys. Lett. 66, 550 (1996).
    [CrossRef]

1997

P. Miltenyi, M. Koch, M. Hofmann, H. Jung, and W. Elsäβer, “Spectrally and temporally resolved gain dynamics in mode locked semiconductorlasers,” Appl. Phys. Lett. 70, 1506 (1997).
[CrossRef]

1996

A. Girndt, A. Knorr, M. Hofmann, and S. W. Koch, “Theoretical analysis of ultrafast pump-probe experiments in semiconductoramplifiers,” Appl. Phys. Lett. 66, 550 (1996).
[CrossRef]

1994

M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
[CrossRef]

1992

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

P. Vasil'ev, “Ultrashort pulse generation in diode lasers,” Opt. Quantum Electron. 24, 801 (1992).
[CrossRef]

C. K. Sun, H. K. Choi, C. A. Wang, and J. G. Fujimoto, “Studies of carrier heating in InGaAs/AlGaAs strained-layer quantumwell lasers using a multiple wavelength pump probe technique,” Appl. Phys. Lett. 62, 747 (1992).
[CrossRef]

J. Mark and J. Mork, “Subpicosecond gain dynamics in InGaAsP opical amplifiers: experimentand theory,” Appl. Phys. Lett. 61, 2281 (1992).
[CrossRef]

1991

Th. Elsässer, J. Shah, L. Rota, and P. Lugli, “Initial thermalization of photoexcited carriers in GaAs studies byfemtosecond luminescence spectroscopy,” Phys. Rev. Lett. 66, 1757 (1991).
[CrossRef]

1990

D. M. Bird, R. M. Fatah, M. K. Cox, P. D. Constantine, J. C. Regnault, and K. H. Cameron, “Miniature packaged actively mode-locked semiconductor laser with tunable20 ps transform limited pulses,” Electron. Lett. 26, 2086 (1990).
[CrossRef]

K. L. Hall, J. Mark, E. P. Ippen, G. Eisenstein, “Femtosecond gain dynamics in InGaAsP optical amplifiers,” Appl. Phys. Lett. 56, 1740 (1990).
[CrossRef]

1989

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses insemiconductor laser amplifiers,” IEEE J. Quantum Electron. QE-25, 2297 (1989).
[CrossRef]

1987

1984

N. K. Dutta, N. A. Olsson, and W. T. Tsang, “Carrier induced refractive index change in AlGaAs quantum well lasers,” Appl. Phys. Lett. 45, 836 (1984).
[CrossRef]

1983

J. Manning, R. Olshansky, and Ch. B. Su, “The carrier-induced index change in AlGaAs and 1.3 μm InGaAsP diodelasers,” IEEE J. Quantum Electron. QE-19, 1525 (1983).
[CrossRef]

Agrawal, G. P.

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses insemiconductor laser amplifiers,” IEEE J. Quantum Electron. QE-25, 2297 (1989).
[CrossRef]

Alphonse, G. A.

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

Andreakis, N. C.

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

Bird, D. M.

D. M. Bird, R. M. Fatah, M. K. Cox, P. D. Constantine, J. C. Regnault, and K. H. Cameron, “Miniature packaged actively mode-locked semiconductor laser with tunable20 ps transform limited pulses,” Electron. Lett. 26, 2086 (1990).
[CrossRef]

Cameron, K. H.

D. M. Bird, R. M. Fatah, M. K. Cox, P. D. Constantine, J. C. Regnault, and K. H. Cameron, “Miniature packaged actively mode-locked semiconductor laser with tunable20 ps transform limited pulses,” Electron. Lett. 26, 2086 (1990).
[CrossRef]

Choi, H. K.

C. K. Sun, H. K. Choi, C. A. Wang, and J. G. Fujimoto, “Studies of carrier heating in InGaAs/AlGaAs strained-layer quantumwell lasers using a multiple wavelength pump probe technique,” Appl. Phys. Lett. 62, 747 (1992).
[CrossRef]

Chow, W. W.

M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
[CrossRef]

Constantine, P. D.

D. M. Bird, R. M. Fatah, M. K. Cox, P. D. Constantine, J. C. Regnault, and K. H. Cameron, “Miniature packaged actively mode-locked semiconductor laser with tunable20 ps transform limited pulses,” Electron. Lett. 26, 2086 (1990).
[CrossRef]

Cox, M. K.

D. M. Bird, R. M. Fatah, M. K. Cox, P. D. Constantine, J. C. Regnault, and K. H. Cameron, “Miniature packaged actively mode-locked semiconductor laser with tunable20 ps transform limited pulses,” Electron. Lett. 26, 2086 (1990).
[CrossRef]

Delfyett, P. J.

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

Dutta, N. K.

N. K. Dutta, N. A. Olsson, and W. T. Tsang, “Carrier induced refractive index change in AlGaAs quantum well lasers,” Appl. Phys. Lett. 45, 836 (1984).
[CrossRef]

Eisenstein, G.

K. L. Hall, J. Mark, E. P. Ippen, G. Eisenstein, “Femtosecond gain dynamics in InGaAsP optical amplifiers,” Appl. Phys. Lett. 56, 1740 (1990).
[CrossRef]

Elsässer, Th.

Th. Elsässer, J. Shah, L. Rota, and P. Lugli, “Initial thermalization of photoexcited carriers in GaAs studies byfemtosecond luminescence spectroscopy,” Phys. Rev. Lett. 66, 1757 (1991).
[CrossRef]

Elsäßer, W.

P. Miltenyi, M. Koch, M. Hofmann, H. Jung, and W. Elsäβer, “Spectrally and temporally resolved gain dynamics in mode locked semiconductorlasers,” Appl. Phys. Lett. 70, 1506 (1997).
[CrossRef]

M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
[CrossRef]

Fatah, R. M.

D. M. Bird, R. M. Fatah, M. K. Cox, P. D. Constantine, J. C. Regnault, and K. H. Cameron, “Miniature packaged actively mode-locked semiconductor laser with tunable20 ps transform limited pulses,” Electron. Lett. 26, 2086 (1990).
[CrossRef]

Feldmann, J.

M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
[CrossRef]

Florez, L. Th.

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

Fujimoto, J. G.

C. K. Sun, H. K. Choi, C. A. Wang, and J. G. Fujimoto, “Studies of carrier heating in InGaAs/AlGaAs strained-layer quantumwell lasers using a multiple wavelength pump probe technique,” Appl. Phys. Lett. 62, 747 (1992).
[CrossRef]

W. Z. Lin, J. G. Fujimoto, and E. P. Ippen, “Femtosecond dynamics of highly excited carriers in AlxGa1−xAs,” Appl. Phys. Lett. 51, 161 (1987).
[CrossRef]

Girndt, A.

A. Girndt, A. Knorr, M. Hofmann, and S. W. Koch, “Theoretical analysis of ultrafast pump-probe experiments in semiconductoramplifiers,” Appl. Phys. Lett. 66, 550 (1996).
[CrossRef]

Gmitter, T.

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

Göbel, E. O.

M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
[CrossRef]

J. Kuhl, M. Serenyi, and E. O. Göbel, “Bandwidth-limited picosecond pulse generation in an actively mode-lockedGaAs laser with intracavity chirp compensation,” Opt. Lett. 12, 334 (1987).
[CrossRef] [PubMed]

Hall, K. L.

K. L. Hall, J. Mark, E. P. Ippen, G. Eisenstein, “Femtosecond gain dynamics in InGaAsP optical amplifiers,” Appl. Phys. Lett. 56, 1740 (1990).
[CrossRef]

Heritage, J. P.

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

Hofmann, M.

P. Miltenyi, M. Koch, M. Hofmann, H. Jung, and W. Elsäβer, “Spectrally and temporally resolved gain dynamics in mode locked semiconductorlasers,” Appl. Phys. Lett. 70, 1506 (1997).
[CrossRef]

A. Girndt, A. Knorr, M. Hofmann, and S. W. Koch, “Theoretical analysis of ultrafast pump-probe experiments in semiconductoramplifiers,” Appl. Phys. Lett. 66, 550 (1996).
[CrossRef]

M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
[CrossRef]

Ippen, E. P.

K. L. Hall, J. Mark, E. P. Ippen, G. Eisenstein, “Femtosecond gain dynamics in InGaAsP optical amplifiers,” Appl. Phys. Lett. 56, 1740 (1990).
[CrossRef]

W. Z. Lin, J. G. Fujimoto, and E. P. Ippen, “Femtosecond dynamics of highly excited carriers in AlxGa1−xAs,” Appl. Phys. Lett. 51, 161 (1987).
[CrossRef]

Jung, H.

P. Miltenyi, M. Koch, M. Hofmann, H. Jung, and W. Elsäβer, “Spectrally and temporally resolved gain dynamics in mode locked semiconductorlasers,” Appl. Phys. Lett. 70, 1506 (1997).
[CrossRef]

Knorr, A.

A. Girndt, A. Knorr, M. Hofmann, and S. W. Koch, “Theoretical analysis of ultrafast pump-probe experiments in semiconductoramplifiers,” Appl. Phys. Lett. 66, 550 (1996).
[CrossRef]

Koch, M.

P. Miltenyi, M. Koch, M. Hofmann, H. Jung, and W. Elsäβer, “Spectrally and temporally resolved gain dynamics in mode locked semiconductorlasers,” Appl. Phys. Lett. 70, 1506 (1997).
[CrossRef]

M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
[CrossRef]

Koch, S. W.

A. Girndt, A. Knorr, M. Hofmann, and S. W. Koch, “Theoretical analysis of ultrafast pump-probe experiments in semiconductoramplifiers,” Appl. Phys. Lett. 66, 550 (1996).
[CrossRef]

M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
[CrossRef]

Kuhl, J.

Lin, W. Z.

W. Z. Lin, J. G. Fujimoto, and E. P. Ippen, “Femtosecond dynamics of highly excited carriers in AlxGa1−xAs,” Appl. Phys. Lett. 51, 161 (1987).
[CrossRef]

Lugli, P.

Th. Elsässer, J. Shah, L. Rota, and P. Lugli, “Initial thermalization of photoexcited carriers in GaAs studies byfemtosecond luminescence spectroscopy,” Phys. Rev. Lett. 66, 1757 (1991).
[CrossRef]

Manning, J.

J. Manning, R. Olshansky, and Ch. B. Su, “The carrier-induced index change in AlGaAs and 1.3 μm InGaAsP diodelasers,” IEEE J. Quantum Electron. QE-19, 1525 (1983).
[CrossRef]

Mark, J.

J. Mark and J. Mork, “Subpicosecond gain dynamics in InGaAsP opical amplifiers: experimentand theory,” Appl. Phys. Lett. 61, 2281 (1992).
[CrossRef]

K. L. Hall, J. Mark, E. P. Ippen, G. Eisenstein, “Femtosecond gain dynamics in InGaAsP optical amplifiers,” Appl. Phys. Lett. 56, 1740 (1990).
[CrossRef]

Miltenyi, P.

P. Miltenyi, M. Koch, M. Hofmann, H. Jung, and W. Elsäβer, “Spectrally and temporally resolved gain dynamics in mode locked semiconductorlasers,” Appl. Phys. Lett. 70, 1506 (1997).
[CrossRef]

Mork, J.

J. Mark and J. Mork, “Subpicosecond gain dynamics in InGaAsP opical amplifiers: experimentand theory,” Appl. Phys. Lett. 61, 2281 (1992).
[CrossRef]

Olshansky, R.

J. Manning, R. Olshansky, and Ch. B. Su, “The carrier-induced index change in AlGaAs and 1.3 μm InGaAsP diodelasers,” IEEE J. Quantum Electron. QE-19, 1525 (1983).
[CrossRef]

Olsson, N. A.

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses insemiconductor laser amplifiers,” IEEE J. Quantum Electron. QE-25, 2297 (1989).
[CrossRef]

N. K. Dutta, N. A. Olsson, and W. T. Tsang, “Carrier induced refractive index change in AlGaAs quantum well lasers,” Appl. Phys. Lett. 45, 836 (1984).
[CrossRef]

Regnault, J. C.

D. M. Bird, R. M. Fatah, M. K. Cox, P. D. Constantine, J. C. Regnault, and K. H. Cameron, “Miniature packaged actively mode-locked semiconductor laser with tunable20 ps transform limited pulses,” Electron. Lett. 26, 2086 (1990).
[CrossRef]

Rota, L.

Th. Elsässer, J. Shah, L. Rota, and P. Lugli, “Initial thermalization of photoexcited carriers in GaAs studies byfemtosecond luminescence spectroscopy,” Phys. Rev. Lett. 66, 1757 (1991).
[CrossRef]

Serenyi, M.

Shah, J.

Th. Elsässer, J. Shah, L. Rota, and P. Lugli, “Initial thermalization of photoexcited carriers in GaAs studies byfemtosecond luminescence spectroscopy,” Phys. Rev. Lett. 66, 1757 (1991).
[CrossRef]

Silberberg, Y.

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

Stoffel, N.

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

Su, Ch. B.

J. Manning, R. Olshansky, and Ch. B. Su, “The carrier-induced index change in AlGaAs and 1.3 μm InGaAsP diodelasers,” IEEE J. Quantum Electron. QE-19, 1525 (1983).
[CrossRef]

Sun, C. K.

C. K. Sun, H. K. Choi, C. A. Wang, and J. G. Fujimoto, “Studies of carrier heating in InGaAs/AlGaAs strained-layer quantumwell lasers using a multiple wavelength pump probe technique,” Appl. Phys. Lett. 62, 747 (1992).
[CrossRef]

Tsang, W. T.

N. K. Dutta, N. A. Olsson, and W. T. Tsang, “Carrier induced refractive index change in AlGaAs quantum well lasers,” Appl. Phys. Lett. 45, 836 (1984).
[CrossRef]

Vasil'ev, P.

P. Vasil'ev, “Ultrashort pulse generation in diode lasers,” Opt. Quantum Electron. 24, 801 (1992).
[CrossRef]

Wang, C. A.

C. K. Sun, H. K. Choi, C. A. Wang, and J. G. Fujimoto, “Studies of carrier heating in InGaAs/AlGaAs strained-layer quantumwell lasers using a multiple wavelength pump probe technique,” Appl. Phys. Lett. 62, 747 (1992).
[CrossRef]

Appl. Phys. Lett.

N. K. Dutta, N. A. Olsson, and W. T. Tsang, “Carrier induced refractive index change in AlGaAs quantum well lasers,” Appl. Phys. Lett. 45, 836 (1984).
[CrossRef]

W. Z. Lin, J. G. Fujimoto, and E. P. Ippen, “Femtosecond dynamics of highly excited carriers in AlxGa1−xAs,” Appl. Phys. Lett. 51, 161 (1987).
[CrossRef]

P. Miltenyi, M. Koch, M. Hofmann, H. Jung, and W. Elsäβer, “Spectrally and temporally resolved gain dynamics in mode locked semiconductorlasers,” Appl. Phys. Lett. 70, 1506 (1997).
[CrossRef]

C. K. Sun, H. K. Choi, C. A. Wang, and J. G. Fujimoto, “Studies of carrier heating in InGaAs/AlGaAs strained-layer quantumwell lasers using a multiple wavelength pump probe technique,” Appl. Phys. Lett. 62, 747 (1992).
[CrossRef]

K. L. Hall, J. Mark, E. P. Ippen, G. Eisenstein, “Femtosecond gain dynamics in InGaAsP optical amplifiers,” Appl. Phys. Lett. 56, 1740 (1990).
[CrossRef]

J. Mark and J. Mork, “Subpicosecond gain dynamics in InGaAsP opical amplifiers: experimentand theory,” Appl. Phys. Lett. 61, 2281 (1992).
[CrossRef]

A. Girndt, A. Knorr, M. Hofmann, and S. W. Koch, “Theoretical analysis of ultrafast pump-probe experiments in semiconductoramplifiers,” Appl. Phys. Lett. 66, 550 (1996).
[CrossRef]

Electron. Lett.

D. M. Bird, R. M. Fatah, M. K. Cox, P. D. Constantine, J. C. Regnault, and K. H. Cameron, “Miniature packaged actively mode-locked semiconductor laser with tunable20 ps transform limited pulses,” Electron. Lett. 26, 2086 (1990).
[CrossRef]

IEEE J. Quantum Electron.

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses insemiconductor laser amplifiers,” IEEE J. Quantum Electron. QE-25, 2297 (1989).
[CrossRef]

P. J. Delfyett, L. Th. Florez, N. Stoffel, T. Gmitter, N. C. Andreakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, “High-power ultrafast laser diodes,” IEEE J. Quantum Electron. QE-28, 2203 (1992).
[CrossRef]

M. Hofmann, M. Koch, J. Feldmann, W. Elsäβer, E. O. Göbel, W. W. Chow, and S. W. Koch, “Picosecond gain dynamics of an actively mode-locked external-cavityLaser Diode,” IEEE J. Quantum Electron. QE-30, 1756 (1994).
[CrossRef]

J. Manning, R. Olshansky, and Ch. B. Su, “The carrier-induced index change in AlGaAs and 1.3 μm InGaAsP diodelasers,” IEEE J. Quantum Electron. QE-19, 1525 (1983).
[CrossRef]

Opt. Lett.

Opt. Quantum Electron.

P. Vasil'ev, “Ultrashort pulse generation in diode lasers,” Opt. Quantum Electron. 24, 801 (1992).
[CrossRef]

Phys. Rev. Lett.

Th. Elsässer, J. Shah, L. Rota, and P. Lugli, “Initial thermalization of photoexcited carriers in GaAs studies byfemtosecond luminescence spectroscopy,” Phys. Rev. Lett. 66, 1757 (1991).
[CrossRef]

Other

W. W. Chow, S. W. Koch, M. Sargent III, Semiconductor Laser Physics (Springer-Verlag, Berlin, 1994).

M. Hofmann, Ph.D. dissertation (Philipp University, Marburg, Germany, 1994).

G. P. Agrawal and N. K. Dutta, Long-WavelengthSemiconductor Lasers (Van Nostrand Reinhold, New York, 1986).

P. Vasil'ev, Ultrafast Diode Lasers(Artech House, Boston, 1995).

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Figures (5)

Fig. 1
Fig. 1

Upper: Optical gain as a function of time for a probe wavelength of 810 nm. Lower: Three-dimensional depiction of the gain as a function of time and wavelength in the vicinity of the temporal position of the pulse emission (the solid curve indicates the temporal evolution at a wavelength of 860.7 nm).

Fig. 2
Fig. 2

Spectral dependence of the gain before, during, and after the emission of the mode-locked pulse. The inset shows on an enlarged scale the gain modulation before (upper curve) and after (lower curve) the pulse emission; Δλ is the mode spacing, and δλ is the mode shift induced by the stimulated emission.

Fig. 3
Fig. 3

Differential refractive index as a function of wavelength.

Fig. 4
Fig. 4

Pulse intensity (left scale) and pulsewidth (right scale) as a function of wavelength for the grating external-cavity configuration.

Fig. 5
Fig. 5

Spectrum of the α parameter of the multi-quantum-well laser.

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

Δ n = n   δ λ λ = λ 2 2 L ( Δ λ ) 2 δ λ λ = λ δ λ 2 L ( Δ λ ) 2 .
ω inst = ω 0 - ω 0 L c n ( t ) t , Δ λ = λ L c n ( t ) t .
λ = 2 nL m .

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