Abstract

Simultaneous measurements of the photorefractive and the absorptive grating gain components in GaAs:EL2 are made and are shown to display qualitative behavior consistent with linearized solutions of a two-carrier rate equation model. These two components, together with the linear absorption coefficient, permit determination of four independent material parameters, e.g., the ionized and the nonionized EL2 densities, the hole photoionization cross section (σ<sub><i>h</i></sub>), and the electro-optic coefficient (<i>r</i><sub>41</sub>). Data obtained at optical wavelengths of 0.96 and 1.06 µm indicate that σ<sub><i>h</i></sub> and <i>r</i><sub>41</sub> are larger than published values.

© 1996 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Metrics

You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription