Abstract

Ultrafast dynamics of the transient velocity overshoot in GaAs and Si have been studied through the use of measurements of radiated and guided terahertz pulses whose time-domain waveforms are proportional to the acceleration and the velocity of carriers, respectively. These measurements have been compared with each other and also with a Monte Carlo simulation. The field-dependent free-space and guided waveforms are qualitatively consistent with Monte Carlo calculations. By correlation of the calculated velocities with a sampling gate function the observed ratio of peak-to-steady-state velocities is found to be in reasonable quantitative agreement. Also, by detecting the free-space radiation from a Si p-i-n structure, we have made the first, to our knowledge, direct experimental observation of transient velocity overshoot in Si.

© 1994 Optical Society of America

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