Abstract

A rigorous theory of optical rectification in zinc-blende semiconductors is developed. This theory combines the bonding-orbitals representation of the electrons in the semiconductor with the band-structure representation. It is shown that when the semiconductor is excited above the absorption edge there is a strong resonant enhancement of the optical rectification signal and of the terahertz-radiation emission related to it. Both the magnitude and the temporal characteristics of this signal are closely related to the intraband relaxation processes in the valence band.

© 1994 Optical Society of America

Dispersion and anisotropy of optical rectification in zinc blende quantum wells

Jacob B. Khurgin
J. Opt. Soc. Am. B 13(10) 2129-2140 (1996)

Scaling of terahertz radiation from large-aperture biased photoconductors

P. K. Benicewicz, J. P. Roberts, and A. J. Taylor
J. Opt. Soc. Am. B 11(12) 2533-2546 (1994)

Coherent terahertz emission from coupled quantum wells with exciton effects

Chaiyuth Chansungsan, Leung Tsang, and S. L. Chuang
J. Opt. Soc. Am. B 11(12) 2508-2518 (1994)

Nonlinear response of the semiconductor quantum-confined structures near and below the middle of the band gap

Jacob B. Khurgin
J. Opt. Soc. Am. B 11(4) 624-631 (1994)

Coherent control of terahertz emission and carrier populations in semiconductor heterostructures

I. Brener, P. C. M. Planken, M. C. Nuss, Marie S. C. Luo, Shun Lien Chuang, L. Pfeiffer, D. E. Leaird, and A. M. Weiner
J. Opt. Soc. Am. B 11(12) 2457-2469 (1994)