Abstract

Measurements have been made at wavelengths between 1486 and 1600 nm of nonlinear refraction and absorption in an InGaAs single quantum well centered in an InGaAsP waveguide. Band-edge resonant nonlinear refractive cross sections as large as σ_n = −5.0 × 10⁻²⁰ cm³ have been deduced with a characteristic saturation carrier density of ~2 × 10¹³ cm⁻³. For all pulse lengths used (≤ 15 ms) the electronic transition nonlinearity appeared always to dominate any thermally induced refractive-index changes.

© 1993 Optical Society of America

Finite-element formalism for linear and nonlinear guided waves in multiple-quantum-well waveguides

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