Abstract

An infrared free-electron laser has been used to measure the first photoluminescence excitation spectrum well below the optical absorption edge in a thin-film amorphous semiconductor. This method should be useful for probing below-gap absorption mechanisms that contribute to photoluminescence in a wide class of amorphous semiconducting films.

© 1989 Optical Society of America

Ultrafast carrier relaxation in hydrogenated amorphous silicon

P. M. Fauchet and D. Hulin
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