Abstract
Polarization-resolved reflections from ordered and bunched silicon nanowire arrays are measured and compared. It is shown that the reflections reduce considerably in bunched nanowires for the -polarized input while not changing considerably for the -polarized input between the ordered and bunched nanowires. The reflection is less than 9% for the whole 230–1000 nm wavelength excitation range for the bunched nanowires in the -polarized input. Frequency-selective reflection features are observed in the ordered nanowires. Results are explained using effective index approximation and finite difference time domain simulations.
© 2012 Optical Society of America
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