## Abstract

Fourier transform infrared (FTIR) spectroscopy combined with a computer code for optical analysis of multilayer structures is implemented in this study as a nondestructive depth profiling tool. High-energy $\left(1.2\phantom{\rule{0.2em}{0ex}}\mathrm{MeV}\right)$ P implanted Si is examined in the as-implanted state and after annealing at $950\xb0\mathrm{C}$. Ion implantation led to the formation of a buried amorphous layer with transition regions that can be described by half-Gaussian segments. Annealing yielded a free carrier concentration profile that can be modeled by a Pearson distribution as confirmed by spreading resistance profilometry (SRP). The proposed optical analysis model incorporates mobility variation versus depth, and the validity of replacing the varying mobility with a constant average value in the analysis of FTIR data is tested.

© 2008 Optical Society of America

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