Abstract

An analytical theory based on a model of the internal quantum efficiency of the silicon photodiode and the temperature dependence of the absorption coefficient of silicon is developed to predict the temperature dependence of the spectral responsivity in the wavelength range from 400 to 1020 nm near room temperature. The influence of the various parameters of the model on the temperature coefficient is investigated theoretically. Comparison of measurements and prediction shows good agreement. The developed model permits further improvement of accuracy in spectral-responsivity scales based on silicon photodiodes, especially in the near-infrared wavelength region.

© 2001 Optical Society of America

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