Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T.-Y. Seong, “Quantum wells due to ordering in GaInP,” Appl. Phys. Lett. 73, 3905–3907 (1998).

[CrossRef]

B. Fluegel, A. Mascarenhas, J. F. Geisz, and J. M. Olson, “Second harmonic generation in ordered Ga_{1−x}In_{x}P,” Phys. Rev. B 57, R6787–R6790 (1998).

[CrossRef]

T.-Y. Seong, J. H. Kim, Y. S. Chun, and G. B. Stringfellow, “Effects of III/V ratio on ordering and anti-phase in GaInP layers,” Appl. Phys. Lett. 70, 3137–3139 (1997).

[CrossRef]

Y. Ueno, V. Ricci, and G. I. Stegeman, “Second-order susceptibility of Ga_{0.5}In_{0.5}P crystals at 1.5 μm and their feasibility for wave guide quasi-phase matching,” J. Opt. Soc. Am. B 14, 1428–1436 (1997).

[CrossRef]

I. Shoji, T. Kondo, A. Kitamoto, M. Shirane, and R. Ito, “Absolute scale of second-order nonlinear-optical coefficients,” J. Opt. Soc. Am. B 14, 2268–2294 (1997).

[CrossRef]

C. Simonneau, J. D. Debray, J. C. Harmand, P. Vidakovic, D. J. Lovering, and J. A. Levenson, “Second-harmonic generation in a doubly resonant semiconductor microcavity,” Opt. Lett. 22, 1775–1777 (1997).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Scheizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, H. Hotta, and I. Hino, “Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga_{0.5}In_{0.5}P,” NEC Res. Dev. 35, 134 (1994).

S.-H. Wei, B. Laks, and A. Zunger, “Dependence of the optical properties of semiconductors alloys on the degree of long-range order,” Appl. Phys. Lett. 62, 1937–1939 (1993).

[CrossRef]

P. Guyot-Sionnest and Y. R. Shen, “Bulk contribution in surface second harmonic generation,” Phys. Rev. B 38, 7985–7996 (1988).

[CrossRef]

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.45}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.45}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T.-Y. Seong, “Quantum wells due to ordering in GaInP,” Appl. Phys. Lett. 73, 3905–3907 (1998).

[CrossRef]

T.-Y. Seong, J. H. Kim, Y. S. Chun, and G. B. Stringfellow, “Effects of III/V ratio on ordering and anti-phase in GaInP layers,” Appl. Phys. Lett. 70, 3137–3139 (1997).

[CrossRef]

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T.-Y. Seong, “Quantum wells due to ordering in GaInP,” Appl. Phys. Lett. 73, 3905–3907 (1998).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Scheizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

B. Fluegel, A. Mascarenhas, J. F. Geisz, and J. M. Olson, “Second harmonic generation in ordered Ga_{1−x}In_{x}P,” Phys. Rev. B 57, R6787–R6790 (1998).

[CrossRef]

B. Fluegel, A. Mascarenhas, J. F. Geisz, and J. M. Olson, “Second harmonic generation in ordered Ga_{1−x}In_{x}P,” Phys. Rev. B 57, R6787–R6790 (1998).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Scheizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, H. Hotta, and I. Hino, “Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga_{0.5}In_{0.5}P,” NEC Res. Dev. 35, 134 (1994).

P. Guyot-Sionnest and Y. R. Shen, “Bulk contribution in surface second harmonic generation,” Phys. Rev. B 38, 7985–7996 (1988).

[CrossRef]

A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, H. Hotta, and I. Hino, “Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga_{0.5}In_{0.5}P,” NEC Res. Dev. 35, 134 (1994).

A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, H. Hotta, and I. Hino, “Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga_{0.5}In_{0.5}P,” NEC Res. Dev. 35, 134 (1994).

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T.-Y. Seong, “Quantum wells due to ordering in GaInP,” Appl. Phys. Lett. 73, 3905–3907 (1998).

[CrossRef]

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T.-Y. Seong, “Quantum wells due to ordering in GaInP,” Appl. Phys. Lett. 73, 3905–3907 (1998).

[CrossRef]

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.45}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, H. Hotta, and I. Hino, “Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga_{0.5}In_{0.5}P,” NEC Res. Dev. 35, 134 (1994).

T.-Y. Seong, J. H. Kim, Y. S. Chun, and G. B. Stringfellow, “Effects of III/V ratio on ordering and anti-phase in GaInP layers,” Appl. Phys. Lett. 70, 3137–3139 (1997).

[CrossRef]

A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, H. Hotta, and I. Hino, “Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga_{0.5}In_{0.5}P,” NEC Res. Dev. 35, 134 (1994).

S.-H. Wei, B. Laks, and A. Zunger, “Dependence of the optical properties of semiconductors alloys on the degree of long-range order,” Appl. Phys. Lett. 62, 1937–1939 (1993).

[CrossRef]

B. Fluegel, A. Mascarenhas, J. F. Geisz, and J. M. Olson, “Second harmonic generation in ordered Ga_{1−x}In_{x}P,” Phys. Rev. B 57, R6787–R6790 (1998).

[CrossRef]

B. Fluegel, A. Mascarenhas, J. F. Geisz, and J. M. Olson, “Second harmonic generation in ordered Ga_{1−x}In_{x}P,” Phys. Rev. B 57, R6787–R6790 (1998).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Scheizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Scheizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T.-Y. Seong, “Quantum wells due to ordering in GaInP,” Appl. Phys. Lett. 73, 3905–3907 (1998).

[CrossRef]

T.-Y. Seong, J. H. Kim, Y. S. Chun, and G. B. Stringfellow, “Effects of III/V ratio on ordering and anti-phase in GaInP layers,” Appl. Phys. Lett. 70, 3137–3139 (1997).

[CrossRef]

P. Guyot-Sionnest and Y. R. Shen, “Bulk contribution in surface second harmonic generation,” Phys. Rev. B 38, 7985–7996 (1988).

[CrossRef]

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T.-Y. Seong, “Quantum wells due to ordering in GaInP,” Appl. Phys. Lett. 73, 3905–3907 (1998).

[CrossRef]

T.-Y. Seong, J. H. Kim, Y. S. Chun, and G. B. Stringfellow, “Effects of III/V ratio on ordering and anti-phase in GaInP layers,” Appl. Phys. Lett. 70, 3137–3139 (1997).

[CrossRef]

A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, H. Hotta, and I. Hino, “Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga_{0.5}In_{0.5}P,” NEC Res. Dev. 35, 134 (1994).

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.45}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T.-Y. Seong, “Quantum wells due to ordering in GaInP,” Appl. Phys. Lett. 73, 3905–3907 (1998).

[CrossRef]

S.-H. Wei, B. Laks, and A. Zunger, “Dependence of the optical properties of semiconductors alloys on the degree of long-range order,” Appl. Phys. Lett. 62, 1937–1939 (1993).

[CrossRef]

S.-H. Wei, B. Laks, and A. Zunger, “Dependence of the optical properties of semiconductors alloys on the degree of long-range order,” Appl. Phys. Lett. 62, 1937–1939 (1993).

[CrossRef]

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, and T.-Y. Seong, “Quantum wells due to ordering in GaInP,” Appl. Phys. Lett. 73, 3905–3907 (1998).

[CrossRef]

P. Ernst, C. Geng, F. Scholz, and H. Scheizer, “Band-gap reduction and valence-band splitting of ordered GaInP_{2},” Appl. Phys. Lett. 67, 2347–2349 (1995).

[CrossRef]

T.-Y. Seong, J. H. Kim, Y. S. Chun, and G. B. Stringfellow, “Effects of III/V ratio on ordering and anti-phase in GaInP layers,” Appl. Phys. Lett. 70, 3137–3139 (1997).

[CrossRef]

S.-H. Wei, B. Laks, and A. Zunger, “Dependence of the optical properties of semiconductors alloys on the degree of long-range order,” Appl. Phys. Lett. 62, 1937–1939 (1993).

[CrossRef]

H. Tanaka, Y. Kawamura, and H. Asahi, “Refractive indices of In_{0.45}Ga_{0.51−x}Al_{x}P lattice matched to GaAs,” J. Appl. Phys. 59, 985–986 (1986).

[CrossRef]

Y. Ueno, V. Ricci, and G. I. Stegeman, “Second-order susceptibility of Ga_{0.5}In_{0.5}P crystals at 1.5 μm and their feasibility for wave guide quasi-phase matching,” J. Opt. Soc. Am. B 14, 1428–1436 (1997).

[CrossRef]

I. Shoji, T. Kondo, A. Kitamoto, M. Shirane, and R. Ito, “Absolute scale of second-order nonlinear-optical coefficients,” J. Opt. Soc. Am. B 14, 2268–2294 (1997).

[CrossRef]

A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, H. Hotta, and I. Hino, “Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga_{0.5}In_{0.5}P,” NEC Res. Dev. 35, 134 (1994).

B. Fluegel, A. Mascarenhas, J. F. Geisz, and J. M. Olson, “Second harmonic generation in ordered Ga_{1−x}In_{x}P,” Phys. Rev. B 57, R6787–R6790 (1998).

[CrossRef]

P. Guyot-Sionnest and Y. R. Shen, “Bulk contribution in surface second harmonic generation,” Phys. Rev. B 38, 7985–7996 (1988).

[CrossRef]

In spite of the high index of GaAs, which results in small internal angles, the effective susceptibility of GaAs can be as high as 0.6 d_{14} for an external 45° angle of incidence.

Y. R. Shen, The Principles of Nonlinear Optics (Wiley, New York, 1984).

P. N. Butcher and D. Cotter, The Elements of Nonlinear Optics (Cambridge U. Press, Cambridge, 1991).