Abstract

We report on the observation of spatiotemporal dynamics on picosecond time scales for an antireflection-coated ridge waveguide laser diode that is only 5 µm wide. Depending on the applied current, three dynamic regimes can be distinguished, showing the transition from regular to irregular spatiotemporal emission. We discuss the underlying mechanisms and develop a comprehensive understanding of this dynamic behavior. First, for moderate pumping, we find a typical relaxation oscillation behavior of the fundamental lateral mode. Second, at intermediate current levels, we observe lateral high-frequency switching of the output intensity between the left-hand and the right-hand parts of the active region. The switching frequency increases linearly with the excitation current and is of the order of 10 GHz. We give evidence that this switching behavior results from the coexistence and interaction of fundamental and first-order lateral modes that belong to different longitudinal mode families. The observed dependence of the switching frequency on the bias current can be attributed to a change in the width of the emission profile. Third, at high pumping levels, irregular spatiotemporal dynamics with the coexistence of low- and high-frequency spatial switching and temporal pulsations can be found. Finally, the influence of waveguide design and consequences for applications are considered and discussed.

© 1999 Optical Society of America

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  21. R. K. DeFrees, D. J. Bossert, N. Yu, K. Harnett, and R. A. Elliot, “Spectral and picosecond temporal properties of flared guide Y-coupled phase-locked laser arrays,” Appl. Phys. Lett. 53, 2380–2382 (1988).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  30. M. Homar, J. V. Moloney, and M. San Miguel, “Traveling wave model of a multimode Fabry–Pérot laser in free running and external cavity configurations,” IEEE J. Quantum Electron. 32, 553–566 (1996).
    [CrossRef]
  31. A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
    [CrossRef]
  32. A. Klehr, R. Müller, M. Voss, and A. Bärwolf, “Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation,” Appl. Phys. Lett. 64, 830–832 (1994).
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    [CrossRef]

1999 (1)

T. Burkhard, M. O. Ziegler, I. Fischer, and W. Elsässer, “Spatio-temporal dynamics of broad area semiconductor lasers and its characterization,” Chaos Solitons Fractals 10, 845–850 (1999).

1997 (3)

M. Münkel, F. Kaiser, and O. Hess, “Stabilization of spatio-temporally chaotic laser arrays by means of delayed optical feedback,” Phys. Rev. E 56, 3868–3875 (1997).
[CrossRef]

J. Hashimoto, I. Yoshida, M. Murata, and T. Katsuyama, “Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-μm GaInAs–GaInP strained quantum-well laser,” IEEE J. Quantum Electron. 33, 66–70 (1997).
[CrossRef]

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

1996 (5)

I. Fischer, G. H. M. van Tartwijk, A. M. Levine, W. Elsässer, E. Göbel, and D. Lenstra, “Fast pulsing and chaotic itinerancy with a drift in the coherence collapse of semiconductor lasers,” Phys. Rev. Lett. 76, 220–223 (1996).
[CrossRef] [PubMed]

M. Homar, J. V. Moloney, and M. San Miguel, “Traveling wave model of a multimode Fabry–Pérot laser in free running and external cavity configurations,” IEEE J. Quantum Electron. 32, 553–566 (1996).
[CrossRef]

P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, and R. Murison, “High-performance 980-nm strained-layer GaInAs–GaInAsP–GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy,” IEEE Photon. Technol. Lett. 8, 986–988 (1996).
[CrossRef]

I. Fischer, O. Hess, W. Elsässer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

M. Münkel, F. Kaiser, and O. Hess, “Spatio-temporal dynamics of multi-stripe semiconductor lasers with delayed optical feedback,” Phys. Lett. A 222, 67–75 (1996).
[CrossRef]

1995 (2)

O. Hess, S. W. Koch, and J. V. Moloney, “Filamentation and beam propagation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 31, 35–43 (1995).
[CrossRef]

M. Toivonen, M. Jalonen, A. Salokatve, J. N. Näppi, P. Savolainen, M. Pessa, and H. Asonen, “All solid source molecular beam epitaxy growth of strained layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm),” Appl. Phys. Lett. 67, 2332–2334 (1995).
[CrossRef]

1994 (4)

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “980-nm aluminum-free InGaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers,” IEEE J. Quantum Electron. 30, 408–414 (1994).
[CrossRef]

H. Asonen, A. Ovtchinnikov, G. Zhang, J. N. Näppi, P. Savolainen, and M. Pessa, “Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers,” IEEE J. Quantum Electron. 30, 415–423 (1994).
[CrossRef]

O. Hess, “Spatio-temporal complexity in multi-stripe and broad-area semiconductor lasers,” Chaos Solitons Fractals 4, 1597–1618 (1994).
[CrossRef]

A. Klehr, R. Müller, M. Voss, and A. Bärwolf, “Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation,” Appl. Phys. Lett. 64, 830–832 (1994).
[CrossRef]

1993 (2)

M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, and H. Asonen, “Aluminum-free 980-nm laser diodes,” Mater. Sci. Eng. 21, 2111–2116 (1993).
[CrossRef]

H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, “High-power operation of aluminum-free (λ=980 nm) pump laser for erbium-doped fiber amplifier,” IEEE Photon. Technol. Lett. 5, 589–591 (1993).
[CrossRef]

1992 (1)

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “Aluminum free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-QW lasers at 0.98 μm,” Electron. Lett. 28, 1149–1150 (1992).
[CrossRef]

1991 (1)

A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
[CrossRef]

1989 (2)

L. K. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, and G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25, 1385–1392 (1989).
[CrossRef]

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes, and A. E. Kibbler, “Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces,” Appl. Phys. Lett. 55, 1208–1210 (1989).
[CrossRef]

1988 (1)

R. K. DeFrees, D. J. Bossert, N. Yu, K. Harnett, and R. A. Elliot, “Spectral and picosecond temporal properties of flared guide Y-coupled phase-locked laser arrays,” Appl. Phys. Lett. 53, 2380–2382 (1988).
[CrossRef]

1987 (1)

T. Ohtoshi, K. Yamagushi, C. Nagaoka, T. Uda, M. Murayama, and N. Chinone, “A two-dimensional device simulator of semiconductor lasers,” Solid-State Electron. 30, 627–638 (1987).
[CrossRef]

1982 (1)

R. F. Kazarinov, C. H. Henry, and R. A. Logan, “Longitudinal mode self-stabilization in semiconductor lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[CrossRef]

1981 (1)

1976 (1)

P. A. Kirkby and G. H. B. Thompson, “Channeled substrate buried heterostructure GaAs–(GaAl)As injection lasers,” J. Appl. Phys. 47, 4578–4589 (1976).
[CrossRef]

Ahrenkiel, R. K.

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes, and A. E. Kibbler, “Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces,” Appl. Phys. Lett. 55, 1208–1210 (1989).
[CrossRef]

Amann, M. C.

Asonen, H.

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, and R. Murison, “High-performance 980-nm strained-layer GaInAs–GaInAsP–GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy,” IEEE Photon. Technol. Lett. 8, 986–988 (1996).
[CrossRef]

M. Toivonen, M. Jalonen, A. Salokatve, J. N. Näppi, P. Savolainen, M. Pessa, and H. Asonen, “All solid source molecular beam epitaxy growth of strained layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm),” Appl. Phys. Lett. 67, 2332–2334 (1995).
[CrossRef]

H. Asonen, A. Ovtchinnikov, G. Zhang, J. N. Näppi, P. Savolainen, and M. Pessa, “Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers,” IEEE J. Quantum Electron. 30, 415–423 (1994).
[CrossRef]

M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, and H. Asonen, “Aluminum-free 980-nm laser diodes,” Mater. Sci. Eng. 21, 2111–2116 (1993).
[CrossRef]

H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, “High-power operation of aluminum-free (λ=980 nm) pump laser for erbium-doped fiber amplifier,” IEEE Photon. Technol. Lett. 5, 589–591 (1993).
[CrossRef]

Bärwolf, A.

A. Klehr, R. Müller, M. Voss, and A. Bärwolf, “Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation,” Appl. Phys. Lett. 64, 830–832 (1994).
[CrossRef]

A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
[CrossRef]

Bossert, D. J.

R. K. DeFrees, D. J. Bossert, N. Yu, K. Harnett, and R. A. Elliot, “Spectral and picosecond temporal properties of flared guide Y-coupled phase-locked laser arrays,” Appl. Phys. Lett. 53, 2380–2382 (1988).
[CrossRef]

Burkhard, T.

T. Burkhard, M. O. Ziegler, I. Fischer, and W. Elsässer, “Spatio-temporal dynamics of broad area semiconductor lasers and its characterization,” Chaos Solitons Fractals 10, 845–850 (1999).

Chinone, N.

T. Ohtoshi, K. Yamagushi, C. Nagaoka, T. Uda, M. Murayama, and N. Chinone, “A two-dimensional device simulator of semiconductor lasers,” Solid-State Electron. 30, 627–638 (1987).
[CrossRef]

DeFrees, R. K.

R. K. DeFrees, D. J. Bossert, N. Yu, K. Harnett, and R. A. Elliot, “Spectral and picosecond temporal properties of flared guide Y-coupled phase-locked laser arrays,” Appl. Phys. Lett. 53, 2380–2382 (1988).
[CrossRef]

Dunlavy, D. J.

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes, and A. E. Kibbler, “Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces,” Appl. Phys. Lett. 55, 1208–1210 (1989).
[CrossRef]

Elliot, R. A.

R. K. DeFrees, D. J. Bossert, N. Yu, K. Harnett, and R. A. Elliot, “Spectral and picosecond temporal properties of flared guide Y-coupled phase-locked laser arrays,” Appl. Phys. Lett. 53, 2380–2382 (1988).
[CrossRef]

Elsässer, W.

T. Burkhard, M. O. Ziegler, I. Fischer, and W. Elsässer, “Spatio-temporal dynamics of broad area semiconductor lasers and its characterization,” Chaos Solitons Fractals 10, 845–850 (1999).

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

I. Fischer, G. H. M. van Tartwijk, A. M. Levine, W. Elsässer, E. Göbel, and D. Lenstra, “Fast pulsing and chaotic itinerancy with a drift in the coherence collapse of semiconductor lasers,” Phys. Rev. Lett. 76, 220–223 (1996).
[CrossRef] [PubMed]

I. Fischer, O. Hess, W. Elsässer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
[CrossRef]

I. Fischer, O. Hess, and W. Elsässer, “Nonlinear spatio-temporal emission dynamics of broad-area laser diodes,” in A Perspective Look at Nonlinear Media: From Physics to Biology and Social Sciences, J. Parisi, St. C. Müller, and W. Zimmermann, eds., Vol. LPN503 of Lecture Notes in Physics (Springer-Verlag, Berlin, 1998), pp. 362–369.
[CrossRef]

Fischer, I.

T. Burkhard, M. O. Ziegler, I. Fischer, and W. Elsässer, “Spatio-temporal dynamics of broad area semiconductor lasers and its characterization,” Chaos Solitons Fractals 10, 845–850 (1999).

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

I. Fischer, G. H. M. van Tartwijk, A. M. Levine, W. Elsässer, E. Göbel, and D. Lenstra, “Fast pulsing and chaotic itinerancy with a drift in the coherence collapse of semiconductor lasers,” Phys. Rev. Lett. 76, 220–223 (1996).
[CrossRef] [PubMed]

I. Fischer, O. Hess, W. Elsässer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

I. Fischer, O. Hess, and W. Elsässer, “Nonlinear spatio-temporal emission dynamics of broad-area laser diodes,” in A Perspective Look at Nonlinear Media: From Physics to Biology and Social Sciences, J. Parisi, St. C. Müller, and W. Zimmermann, eds., Vol. LPN503 of Lecture Notes in Physics (Springer-Verlag, Berlin, 1998), pp. 362–369.
[CrossRef]

Göbel, E.

I. Fischer, O. Hess, W. Elsässer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

I. Fischer, G. H. M. van Tartwijk, A. M. Levine, W. Elsässer, E. Göbel, and D. Lenstra, “Fast pulsing and chaotic itinerancy with a drift in the coherence collapse of semiconductor lasers,” Phys. Rev. Lett. 76, 220–223 (1996).
[CrossRef] [PubMed]

Göbel, E. O.

A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
[CrossRef]

Greif, J.

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

Harnett, K.

R. K. DeFrees, D. J. Bossert, N. Yu, K. Harnett, and R. A. Elliot, “Spectral and picosecond temporal properties of flared guide Y-coupled phase-locked laser arrays,” Appl. Phys. Lett. 53, 2380–2382 (1988).
[CrossRef]

Hashimoto, J.

J. Hashimoto, I. Yoshida, M. Murata, and T. Katsuyama, “Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-μm GaInAs–GaInP strained quantum-well laser,” IEEE J. Quantum Electron. 33, 66–70 (1997).
[CrossRef]

Henry, C. H.

R. F. Kazarinov, C. H. Henry, and R. A. Logan, “Longitudinal mode self-stabilization in semiconductor lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[CrossRef]

Hess, O.

M. Münkel, F. Kaiser, and O. Hess, “Stabilization of spatio-temporally chaotic laser arrays by means of delayed optical feedback,” Phys. Rev. E 56, 3868–3875 (1997).
[CrossRef]

I. Fischer, O. Hess, W. Elsässer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

M. Münkel, F. Kaiser, and O. Hess, “Spatio-temporal dynamics of multi-stripe semiconductor lasers with delayed optical feedback,” Phys. Lett. A 222, 67–75 (1996).
[CrossRef]

O. Hess, S. W. Koch, and J. V. Moloney, “Filamentation and beam propagation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 31, 35–43 (1995).
[CrossRef]

O. Hess, “Spatio-temporal complexity in multi-stripe and broad-area semiconductor lasers,” Chaos Solitons Fractals 4, 1597–1618 (1994).
[CrossRef]

I. Fischer, O. Hess, and W. Elsässer, “Nonlinear spatio-temporal emission dynamics of broad-area laser diodes,” in A Perspective Look at Nonlinear Media: From Physics to Biology and Social Sciences, J. Parisi, St. C. Müller, and W. Zimmermann, eds., Vol. LPN503 of Lecture Notes in Physics (Springer-Verlag, Berlin, 1998), pp. 362–369.
[CrossRef]

Homar, M.

M. Homar, J. V. Moloney, and M. San Miguel, “Traveling wave model of a multimode Fabry–Pérot laser in free running and external cavity configurations,” IEEE J. Quantum Electron. 32, 553–566 (1996).
[CrossRef]

Ijichi, T.

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “980-nm aluminum-free InGaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers,” IEEE J. Quantum Electron. 30, 408–414 (1994).
[CrossRef]

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “Aluminum free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-QW lasers at 0.98 μm,” Electron. Lett. 28, 1149–1150 (1992).
[CrossRef]

Iketani, A.

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “980-nm aluminum-free InGaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers,” IEEE J. Quantum Electron. 30, 408–414 (1994).
[CrossRef]

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “Aluminum free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-QW lasers at 0.98 μm,” Electron. Lett. 28, 1149–1150 (1992).
[CrossRef]

Jalonen, M.

M. Toivonen, M. Jalonen, A. Salokatve, J. N. Näppi, P. Savolainen, M. Pessa, and H. Asonen, “All solid source molecular beam epitaxy growth of strained layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm),” Appl. Phys. Lett. 67, 2332–2334 (1995).
[CrossRef]

Jennemann, G.

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

Kaiser, F.

M. Münkel, F. Kaiser, and O. Hess, “Stabilization of spatio-temporally chaotic laser arrays by means of delayed optical feedback,” Phys. Rev. E 56, 3868–3875 (1997).
[CrossRef]

M. Münkel, F. Kaiser, and O. Hess, “Spatio-temporal dynamics of multi-stripe semiconductor lasers with delayed optical feedback,” Phys. Lett. A 222, 67–75 (1996).
[CrossRef]

Katsuyama, T.

J. Hashimoto, I. Yoshida, M. Murata, and T. Katsuyama, “Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-μm GaInAs–GaInP strained quantum-well laser,” IEEE J. Quantum Electron. 33, 66–70 (1997).
[CrossRef]

Kazarinov, R. F.

R. F. Kazarinov, C. H. Henry, and R. A. Logan, “Longitudinal mode self-stabilization in semiconductor lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[CrossRef]

Keyes, B.

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes, and A. E. Kibbler, “Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces,” Appl. Phys. Lett. 55, 1208–1210 (1989).
[CrossRef]

Kibbler, A. E.

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes, and A. E. Kibbler, “Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces,” Appl. Phys. Lett. 55, 1208–1210 (1989).
[CrossRef]

Kikuta, T.

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “980-nm aluminum-free InGaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers,” IEEE J. Quantum Electron. 30, 408–414 (1994).
[CrossRef]

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “Aluminum free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-QW lasers at 0.98 μm,” Electron. Lett. 28, 1149–1150 (1992).
[CrossRef]

Kirkby, P. A.

P. A. Kirkby and G. H. B. Thompson, “Channeled substrate buried heterostructure GaAs–(GaAl)As injection lasers,” J. Appl. Phys. 47, 4578–4589 (1976).
[CrossRef]

Klehr, A.

A. Klehr, R. Müller, M. Voss, and A. Bärwolf, “Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation,” Appl. Phys. Lett. 64, 830–832 (1994).
[CrossRef]

A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
[CrossRef]

Koch, S. W.

O. Hess, S. W. Koch, and J. V. Moloney, “Filamentation and beam propagation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 31, 35–43 (1995).
[CrossRef]

Kuindersma, P. I.

L. K. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, and G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25, 1385–1392 (1989).
[CrossRef]

Lenstra, D.

I. Fischer, G. H. M. van Tartwijk, A. M. Levine, W. Elsässer, E. Göbel, and D. Lenstra, “Fast pulsing and chaotic itinerancy with a drift in the coherence collapse of semiconductor lasers,” Phys. Rev. Lett. 76, 220–223 (1996).
[CrossRef] [PubMed]

Levine, A. M.

I. Fischer, G. H. M. van Tartwijk, A. M. Levine, W. Elsässer, E. Göbel, and D. Lenstra, “Fast pulsing and chaotic itinerancy with a drift in the coherence collapse of semiconductor lasers,” Phys. Rev. Lett. 76, 220–223 (1996).
[CrossRef] [PubMed]

Logan, R. A.

R. F. Kazarinov, C. H. Henry, and R. A. Logan, “Longitudinal mode self-stabilization in semiconductor lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[CrossRef]

Miltényi, E.

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

Moloney, J. V.

M. Homar, J. V. Moloney, and M. San Miguel, “Traveling wave model of a multimode Fabry–Pérot laser in free running and external cavity configurations,” IEEE J. Quantum Electron. 32, 553–566 (1996).
[CrossRef]

O. Hess, S. W. Koch, and J. V. Moloney, “Filamentation and beam propagation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 31, 35–43 (1995).
[CrossRef]

Müller, R.

A. Klehr, R. Müller, M. Voss, and A. Bärwolf, “Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation,” Appl. Phys. Lett. 64, 830–832 (1994).
[CrossRef]

A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
[CrossRef]

Münkel, M.

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

M. Münkel, F. Kaiser, and O. Hess, “Stabilization of spatio-temporally chaotic laser arrays by means of delayed optical feedback,” Phys. Rev. E 56, 3868–3875 (1997).
[CrossRef]

M. Münkel, F. Kaiser, and O. Hess, “Spatio-temporal dynamics of multi-stripe semiconductor lasers with delayed optical feedback,” Phys. Lett. A 222, 67–75 (1996).
[CrossRef]

Murata, M.

J. Hashimoto, I. Yoshida, M. Murata, and T. Katsuyama, “Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-μm GaInAs–GaInP strained quantum-well laser,” IEEE J. Quantum Electron. 33, 66–70 (1997).
[CrossRef]

Murayama, M.

T. Ohtoshi, K. Yamagushi, C. Nagaoka, T. Uda, M. Murayama, and N. Chinone, “A two-dimensional device simulator of semiconductor lasers,” Solid-State Electron. 30, 627–638 (1987).
[CrossRef]

Murison, R.

P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, and R. Murison, “High-performance 980-nm strained-layer GaInAs–GaInAsP–GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy,” IEEE Photon. Technol. Lett. 8, 986–988 (1996).
[CrossRef]

Nagaoka, C.

T. Ohtoshi, K. Yamagushi, C. Nagaoka, T. Uda, M. Murayama, and N. Chinone, “A two-dimensional device simulator of semiconductor lasers,” Solid-State Electron. 30, 627–638 (1987).
[CrossRef]

Näppi, J.

M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, and H. Asonen, “Aluminum-free 980-nm laser diodes,” Mater. Sci. Eng. 21, 2111–2116 (1993).
[CrossRef]

H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, “High-power operation of aluminum-free (λ=980 nm) pump laser for erbium-doped fiber amplifier,” IEEE Photon. Technol. Lett. 5, 589–591 (1993).
[CrossRef]

Näppi, J. N.

M. Toivonen, M. Jalonen, A. Salokatve, J. N. Näppi, P. Savolainen, M. Pessa, and H. Asonen, “All solid source molecular beam epitaxy growth of strained layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm),” Appl. Phys. Lett. 67, 2332–2334 (1995).
[CrossRef]

H. Asonen, A. Ovtchinnikov, G. Zhang, J. N. Näppi, P. Savolainen, and M. Pessa, “Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers,” IEEE J. Quantum Electron. 30, 415–423 (1994).
[CrossRef]

Ohkubo, M.

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “980-nm aluminum-free InGaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers,” IEEE J. Quantum Electron. 30, 408–414 (1994).
[CrossRef]

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “Aluminum free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-QW lasers at 0.98 μm,” Electron. Lett. 28, 1149–1150 (1992).
[CrossRef]

Ohtoshi, T.

T. Ohtoshi, K. Yamagushi, C. Nagaoka, T. Uda, M. Murayama, and N. Chinone, “A two-dimensional device simulator of semiconductor lasers,” Solid-State Electron. 30, 627–638 (1987).
[CrossRef]

Olson, J. M.

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes, and A. E. Kibbler, “Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces,” Appl. Phys. Lett. 55, 1208–1210 (1989).
[CrossRef]

Ovtchinnikov, A.

H. Asonen, A. Ovtchinnikov, G. Zhang, J. N. Näppi, P. Savolainen, and M. Pessa, “Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers,” IEEE J. Quantum Electron. 30, 415–423 (1994).
[CrossRef]

H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, “High-power operation of aluminum-free (λ=980 nm) pump laser for erbium-doped fiber amplifier,” IEEE Photon. Technol. Lett. 5, 589–591 (1993).
[CrossRef]

M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, and H. Asonen, “Aluminum-free 980-nm laser diodes,” Mater. Sci. Eng. 21, 2111–2116 (1993).
[CrossRef]

Pessa, M.

P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, and R. Murison, “High-performance 980-nm strained-layer GaInAs–GaInAsP–GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy,” IEEE Photon. Technol. Lett. 8, 986–988 (1996).
[CrossRef]

M. Toivonen, M. Jalonen, A. Salokatve, J. N. Näppi, P. Savolainen, M. Pessa, and H. Asonen, “All solid source molecular beam epitaxy growth of strained layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm),” Appl. Phys. Lett. 67, 2332–2334 (1995).
[CrossRef]

H. Asonen, A. Ovtchinnikov, G. Zhang, J. N. Näppi, P. Savolainen, and M. Pessa, “Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers,” IEEE J. Quantum Electron. 30, 415–423 (1994).
[CrossRef]

M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, and H. Asonen, “Aluminum-free 980-nm laser diodes,” Mater. Sci. Eng. 21, 2111–2116 (1993).
[CrossRef]

H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, “High-power operation of aluminum-free (λ=980 nm) pump laser for erbium-doped fiber amplifier,” IEEE Photon. Technol. Lett. 5, 589–591 (1993).
[CrossRef]

Ries, R.

H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, “High-power operation of aluminum-free (λ=980 nm) pump laser for erbium-doped fiber amplifier,” IEEE Photon. Technol. Lett. 5, 589–591 (1993).
[CrossRef]

Rikken, G. L. J.

L. K. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, and G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25, 1385–1392 (1989).
[CrossRef]

Sacher, J.

A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
[CrossRef]

Salokatve, A.

M. Toivonen, M. Jalonen, A. Salokatve, J. N. Näppi, P. Savolainen, M. Pessa, and H. Asonen, “All solid source molecular beam epitaxy growth of strained layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm),” Appl. Phys. Lett. 67, 2332–2334 (1995).
[CrossRef]

San Miguel, M.

M. Homar, J. V. Moloney, and M. San Miguel, “Traveling wave model of a multimode Fabry–Pérot laser in free running and external cavity configurations,” IEEE J. Quantum Electron. 32, 553–566 (1996).
[CrossRef]

Savolainen, P.

P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, and R. Murison, “High-performance 980-nm strained-layer GaInAs–GaInAsP–GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy,” IEEE Photon. Technol. Lett. 8, 986–988 (1996).
[CrossRef]

M. Toivonen, M. Jalonen, A. Salokatve, J. N. Näppi, P. Savolainen, M. Pessa, and H. Asonen, “All solid source molecular beam epitaxy growth of strained layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm),” Appl. Phys. Lett. 67, 2332–2334 (1995).
[CrossRef]

H. Asonen, A. Ovtchinnikov, G. Zhang, J. N. Näppi, P. Savolainen, and M. Pessa, “Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers,” IEEE J. Quantum Electron. 30, 415–423 (1994).
[CrossRef]

H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, “High-power operation of aluminum-free (λ=980 nm) pump laser for erbium-doped fiber amplifier,” IEEE Photon. Technol. Lett. 5, 589–591 (1993).
[CrossRef]

Steegmuller, B.

Thijs, P. J. A.

L. K. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, and G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25, 1385–1392 (1989).
[CrossRef]

Thompson, G. H. B.

P. A. Kirkby and G. H. B. Thompson, “Channeled substrate buried heterostructure GaAs–(GaAl)As injection lasers,” J. Appl. Phys. 47, 4578–4589 (1976).
[CrossRef]

Tiemeijer, L. K.

L. K. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, and G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25, 1385–1392 (1989).
[CrossRef]

Toivonen, M.

P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, and R. Murison, “High-performance 980-nm strained-layer GaInAs–GaInAsP–GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy,” IEEE Photon. Technol. Lett. 8, 986–988 (1996).
[CrossRef]

M. Toivonen, M. Jalonen, A. Salokatve, J. N. Näppi, P. Savolainen, M. Pessa, and H. Asonen, “All solid source molecular beam epitaxy growth of strained layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm),” Appl. Phys. Lett. 67, 2332–2334 (1995).
[CrossRef]

Uda, T.

T. Ohtoshi, K. Yamagushi, C. Nagaoka, T. Uda, M. Murayama, and N. Chinone, “A two-dimensional device simulator of semiconductor lasers,” Solid-State Electron. 30, 627–638 (1987).
[CrossRef]

van Tartwijk, G. H. M.

I. Fischer, G. H. M. van Tartwijk, A. M. Levine, W. Elsässer, E. Göbel, and D. Lenstra, “Fast pulsing and chaotic itinerancy with a drift in the coherence collapse of semiconductor lasers,” Phys. Rev. Lett. 76, 220–223 (1996).
[CrossRef] [PubMed]

Voss, M.

A. Klehr, R. Müller, M. Voss, and A. Bärwolf, “Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation,” Appl. Phys. Lett. 64, 830–832 (1994).
[CrossRef]

A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
[CrossRef]

Yamagushi, K.

T. Ohtoshi, K. Yamagushi, C. Nagaoka, T. Uda, M. Murayama, and N. Chinone, “A two-dimensional device simulator of semiconductor lasers,” Solid-State Electron. 30, 627–638 (1987).
[CrossRef]

Yoshida, I.

J. Hashimoto, I. Yoshida, M. Murata, and T. Katsuyama, “Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-μm GaInAs–GaInP strained quantum-well laser,” IEEE J. Quantum Electron. 33, 66–70 (1997).
[CrossRef]

Yu, N.

R. K. DeFrees, D. J. Bossert, N. Yu, K. Harnett, and R. A. Elliot, “Spectral and picosecond temporal properties of flared guide Y-coupled phase-locked laser arrays,” Appl. Phys. Lett. 53, 2380–2382 (1988).
[CrossRef]

Zhang, G.

H. Asonen, A. Ovtchinnikov, G. Zhang, J. N. Näppi, P. Savolainen, and M. Pessa, “Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers,” IEEE J. Quantum Electron. 30, 415–423 (1994).
[CrossRef]

H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, “High-power operation of aluminum-free (λ=980 nm) pump laser for erbium-doped fiber amplifier,” IEEE Photon. Technol. Lett. 5, 589–591 (1993).
[CrossRef]

M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, and H. Asonen, “Aluminum-free 980-nm laser diodes,” Mater. Sci. Eng. 21, 2111–2116 (1993).
[CrossRef]

Ziegler, M. O.

T. Burkhard, M. O. Ziegler, I. Fischer, and W. Elsässer, “Spatio-temporal dynamics of broad area semiconductor lasers and its characterization,” Chaos Solitons Fractals 10, 845–850 (1999).

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

Appl. Opt. (1)

Appl. Phys. Lett. (4)

M. Toivonen, M. Jalonen, A. Salokatve, J. N. Näppi, P. Savolainen, M. Pessa, and H. Asonen, “All solid source molecular beam epitaxy growth of strained layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm),” Appl. Phys. Lett. 67, 2332–2334 (1995).
[CrossRef]

R. K. DeFrees, D. J. Bossert, N. Yu, K. Harnett, and R. A. Elliot, “Spectral and picosecond temporal properties of flared guide Y-coupled phase-locked laser arrays,” Appl. Phys. Lett. 53, 2380–2382 (1988).
[CrossRef]

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes, and A. E. Kibbler, “Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces,” Appl. Phys. Lett. 55, 1208–1210 (1989).
[CrossRef]

A. Klehr, R. Müller, M. Voss, and A. Bärwolf, “Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation,” Appl. Phys. Lett. 64, 830–832 (1994).
[CrossRef]

Chaos Solitons Fractals (2)

O. Hess, “Spatio-temporal complexity in multi-stripe and broad-area semiconductor lasers,” Chaos Solitons Fractals 4, 1597–1618 (1994).
[CrossRef]

T. Burkhard, M. O. Ziegler, I. Fischer, and W. Elsässer, “Spatio-temporal dynamics of broad area semiconductor lasers and its characterization,” Chaos Solitons Fractals 10, 845–850 (1999).

Electron. Lett. (2)

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “Aluminum free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-QW lasers at 0.98 μm,” Electron. Lett. 28, 1149–1150 (1992).
[CrossRef]

A. Klehr, A. Bärwolf, R. Müller, M. Voss, J. Sacher, W. Elsässer, and E. O. Göbel, “Ultrafast polarization switching in ridge waveguide laser diodes,” Electron. Lett. 27, 1680–1682 (1991).
[CrossRef]

Europhys. Lett. (1)

I. Fischer, O. Hess, W. Elsässer, and E. Göbel, “Complex spatio-temporal dynamics in the near-field of a broad-area semiconductor laser,” Europhys. Lett. 35, 579–584 (1996).
[CrossRef]

IEEE J. Quantum Electron. (6)

J. Hashimoto, I. Yoshida, M. Murata, and T. Katsuyama, “Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-μm GaInAs–GaInP strained quantum-well laser,” IEEE J. Quantum Electron. 33, 66–70 (1997).
[CrossRef]

M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, “980-nm aluminum-free InGaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers,” IEEE J. Quantum Electron. 30, 408–414 (1994).
[CrossRef]

H. Asonen, A. Ovtchinnikov, G. Zhang, J. N. Näppi, P. Savolainen, and M. Pessa, “Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers,” IEEE J. Quantum Electron. 30, 415–423 (1994).
[CrossRef]

L. K. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, and G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25, 1385–1392 (1989).
[CrossRef]

M. Homar, J. V. Moloney, and M. San Miguel, “Traveling wave model of a multimode Fabry–Pérot laser in free running and external cavity configurations,” IEEE J. Quantum Electron. 32, 553–566 (1996).
[CrossRef]

O. Hess, S. W. Koch, and J. V. Moloney, “Filamentation and beam propagation in broad-area semiconductor lasers,” IEEE J. Quantum Electron. 31, 35–43 (1995).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, and R. Murison, “High-performance 980-nm strained-layer GaInAs–GaInAsP–GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy,” IEEE Photon. Technol. Lett. 8, 986–988 (1996).
[CrossRef]

H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, “High-power operation of aluminum-free (λ=980 nm) pump laser for erbium-doped fiber amplifier,” IEEE Photon. Technol. Lett. 5, 589–591 (1993).
[CrossRef]

J. Appl. Phys. (2)

R. F. Kazarinov, C. H. Henry, and R. A. Logan, “Longitudinal mode self-stabilization in semiconductor lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[CrossRef]

P. A. Kirkby and G. H. B. Thompson, “Channeled substrate buried heterostructure GaAs–(GaAl)As injection lasers,” J. Appl. Phys. 47, 4578–4589 (1976).
[CrossRef]

Lecture Notes in Physics (1)

I. Fischer, O. Hess, and W. Elsässer, “Nonlinear spatio-temporal emission dynamics of broad-area laser diodes,” in A Perspective Look at Nonlinear Media: From Physics to Biology and Social Sciences, J. Parisi, St. C. Müller, and W. Zimmermann, eds., Vol. LPN503 of Lecture Notes in Physics (Springer-Verlag, Berlin, 1998), pp. 362–369.
[CrossRef]

Mater. Sci. Eng. (1)

M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, and H. Asonen, “Aluminum-free 980-nm laser diodes,” Mater. Sci. Eng. 21, 2111–2116 (1993).
[CrossRef]

Phys. Lett. A (1)

M. Münkel, F. Kaiser, and O. Hess, “Spatio-temporal dynamics of multi-stripe semiconductor lasers with delayed optical feedback,” Phys. Lett. A 222, 67–75 (1996).
[CrossRef]

Phys. Rev. E (1)

M. Münkel, F. Kaiser, and O. Hess, “Stabilization of spatio-temporally chaotic laser arrays by means of delayed optical feedback,” Phys. Rev. E 56, 3868–3875 (1997).
[CrossRef]

Phys. Rev. Lett. (1)

I. Fischer, G. H. M. van Tartwijk, A. M. Levine, W. Elsässer, E. Göbel, and D. Lenstra, “Fast pulsing and chaotic itinerancy with a drift in the coherence collapse of semiconductor lasers,” Phys. Rev. Lett. 76, 220–223 (1996).
[CrossRef] [PubMed]

Proc. SPIE (1)

M. O. Ziegler, E. Miltényi, M. Münkel, J. Greif, G. Jennemann, I. Fischer, H. Asonen, and W. Elsässer, “Spatio-temporal dynamics in the near-field of a 980-nm ridge waveguide pump laser diode,” in Physics and Simulation of Optoelectronic Devices V, M. Osinski and W. Chow, eds., Proc. SPIE 2994, 572–579 (1997).
[CrossRef]

Solid-State Electron. (1)

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T. Ijichi, M. Ohkubo, N. Matsumoto, and H. Okamoto, “High-power cw operation of aluminum-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers,” in Proceedings of the 12th IEEE International Semiconductor Laser Conference (IEEE, Piscataway, N.J., 1990), pp. 44–45.

H. Asonen, Tampere University of Technology, Tampere, Finland (personal communication, 1997).

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Figures (7)

Fig. 1
Fig. 1

Experimental setup for near-field measurements of a RW laser. MO, microscope objective; the other abbreviations are defined in the text.

Fig. 2
Fig. 2

Spatiotemporal near-field traces of the emitted light intensity at currents of (a) I=350 mA and (b) I=550 mA. The length of the time windows is 1 ns, with a delay to the first relaxation oscillation of 7 ns. (c) Dependence of the oscillation frequency on the laser current. The double plus signs indicate the spread in uncertainty.

Fig. 3
Fig. 3

Calculated spatiotemporal near field of the emitted light intensity at I/Ith=10. The length of the time window is 0.05 ns, with a delay to the turn-on of the current pulse of 8 ns.

Fig. 4
Fig. 4

(a) Real part of the eigenmodes Pj of the calculated data for the fundamental and the first lateral eigenmodes, depending on the lateral position. (b) Spectrum of the fundamental and the first lateral modes.

Fig. 5
Fig. 5

Measured output spectrum at a current of I=500 mA. The indices q, i of some lateral modes are shown in accordance with our theoretical calculations.

Fig. 6
Fig. 6

Dependence of the inverse square of the width of the emission profile on the applied current for several single-shot traces. The various data points for one current indicate the spread in measurement uncertainty.

Fig. 7
Fig. 7

Streak-camera images of the near field of the emitted light intensity for an applied current of I=1000 mA. (a) Turn-on behavior, (b) 5 ns later. The length of the time windows is 5 ns.

Tables (1)

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Table 1 Parameters Used for Simulations of the Ridge Waveguide Laser

Equations (8)

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nlctE=iDpx2E-[γE+iη(x)]E+Γ(x)[g(N)+ik0δn(N)]E,
tN=Λ(x)+Dfx2N-γNRN-20cω0nlg(N)|E|2.
g(N)=gN(N-N0),
δn=-αgNN/k0,
γE=-lnR1R22L,
E(x, t)=jaj(t)Pj(x),
Ck,l=1T0TE*(xk, t)E(xl, t)dt,k, l=1Nx,
Dpx2E(x, t),Dp=cλ4πnlβw2.

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