Abstract

We have investigated exciton dynamics and spin relaxation in a GaAs/AlAs multiple quantum well and in tensile-strained GaAs1−xPx/Al0.35Ga0.65As quantum wells. The studies have been done by picosecond time-resolved photoluminescence spectroscopy. The strain introduced by the presence of phosphorous in the GaAs1−xPx/Al0.35Ga0.65As quantum wells modifies the subband dispersions, permitting access to new structures that include the possibility of the light-hole exciton’s being the first excited state of the system. Our studies have focused on the influence of the different subband dispersions on exciton dynamics and spin relaxation. We have found that the exciton formation and the spin relaxation times decrease for the quasi-degenerate heavy-hole–light-hole excitonic ground state and that the recombination time depends essentially on the character of the excitonic ground state.

© 1996 Optical Society of America

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  1. J. Kusano, Y. Segawa, Y. Aoyagi, S. Namba, and H. Okamoto, “Extremely slow energy relaxation of a two dimensional exciton in a GaAs superlattice structure,” Phys. Rev. B 40, 1685–1691 (1989).
    [Crossref]
  2. T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham, and J. M. Kuo, “Dynamics of exciton formation and relaxation in GaAs quantum wells,” Phys. Rev. B 42, 7434–7438 (1990).
    [Crossref]
  3. R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher, and K. Ploog, “Exciton dynamics in a GaAs quantum well,” Phys. Rev. B 44, 1395–1398 (1991).
    [Crossref]
  4. B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Semarge, and D. S. Katzer, “Enhanced radiative recombination of free excitons in GaAs quantum wells,” Phys. Rev. Lett. 67, 2355–2358 (1991).
    [Crossref] [PubMed]
  5. Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, and M. Colocci, “Dynamics of exciton relaxation in GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. B 45, 6965–6968 (1992).
    [Crossref]
  6. P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter, “Selective exciton formation in thin GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. Lett. 71, 3878–3881 (1993).
    [Crossref] [PubMed]
  7. B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
    [Crossref]
  8. A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
    [Crossref]
  9. T. Uenoyama and L. J. Sham, “Hole relaxation and luminescence polarization in doped and undoped quantum wells,” Phys. Rev. Lett. 64, 3070–3073 (1990); T. Uenoyama and L. J. Sham, “Carrier relaxation and luminescence polarization in quantum wells,” Phys. Rev. B 42, 7114–7123 (1990).
    [Crossref] [PubMed]
  10. R. Ferreira and G. Bastard, “Spin–flip scattering of holes in semiconductor quantum wells,” Phys. Rev. B 43, 9687–9691 (1991).
    [Crossref]
  11. T. C. Damen, L. Viña, J. E. Cunningham, J. Shah, and L. J. Sham, “Subpicosecond spin relaxation dynamics of exciton and free carriers in GaAs quantum wells,” Phys. Rev. Lett. 67, 3432–3435 (1991).
    [Crossref] [PubMed]
  12. G. Bastard and R. Ferreira, “Spin– flip scattering times in semiconductor quantum wells,” Surf. Sci. 267, 335–341 (1992).
    [Crossref]
  13. Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
    [Crossref]
  14. M. Z. Maialle, E. A. de Andrada e Silva, and L. J. Sham, “Exciton spin dynamics in quantum wells,” Phys. Rev. B 47, 15776–15788 (1993).
    [Crossref]
  15. L. Muñoz, E. Pérez, L. Viña, and K. Ploog, “Spin relaxation in intrinsic GaAs quantum wells: influence of excitonic localization,” Phys. Rev. B 51, 4247–4257 (1995).
    [Crossref]
  16. B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
    [Crossref]
  17. E. P. O’Reilly, “Valence band engineering in strained-layer structures,” Semicond. Sci. Technol. 4, 121–137 (1989).
    [Crossref]
  18. B. D. C. Berolet, J. Hsu, and K. M. Lau, “Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition,” Appl. Phys. Lett. 53, 2501–2503 (1988).
    [Crossref]
  19. E. S. Koteles, D. A. Owens, D. C. Bertolet, J. Hsu, and K. M. Lau, “Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells,” Surf. Sci. 228, 314–317 (1990).
    [Crossref]
  20. L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, D. C. Bertolet, and K. M. Lau, “Magneto-optical properties of biaxially strained quantum wells,” Philos. Mag. B 70, 397–408 (1994).
    [Crossref]
  21. L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
    [Crossref]
  22. R. F. Schnabel, R. Zimmermann, B. Bimberg, H. Nickel, R. Lösch, and W. Schlapp, “Influence of exciton localization on recombination line shapes: Inx Ga1−x As/GaAs quantum wells as a model,” Phys. Rev. B 46, 9873–9876 (1992).
    [Crossref]
  23. The generation of the second harmonic of the delayed pulse in the upconversion spectrometer hinders the observation of the PL.
  24. L. Muñoz, E. Pérez, L. Viña, J. Fernández-Rossier, C. Tejedor, and K. Ploog, “Spin splitting of excitons in GaAs quantum wells at zero magnetic field,” Solid-State Electron. (to be published).

1995 (2)

L. Muñoz, E. Pérez, L. Viña, and K. Ploog, “Spin relaxation in intrinsic GaAs quantum wells: influence of excitonic localization,” Phys. Rev. B 51, 4247–4257 (1995).
[Crossref]

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

1994 (3)

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
[Crossref]

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, D. C. Bertolet, and K. M. Lau, “Magneto-optical properties of biaxially strained quantum wells,” Philos. Mag. B 70, 397–408 (1994).
[Crossref]

1993 (3)

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

M. Z. Maialle, E. A. de Andrada e Silva, and L. J. Sham, “Exciton spin dynamics in quantum wells,” Phys. Rev. B 47, 15776–15788 (1993).
[Crossref]

P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter, “Selective exciton formation in thin GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. Lett. 71, 3878–3881 (1993).
[Crossref] [PubMed]

1992 (4)

Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, and M. Colocci, “Dynamics of exciton relaxation in GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. B 45, 6965–6968 (1992).
[Crossref]

G. Bastard and R. Ferreira, “Spin– flip scattering times in semiconductor quantum wells,” Surf. Sci. 267, 335–341 (1992).
[Crossref]

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

R. F. Schnabel, R. Zimmermann, B. Bimberg, H. Nickel, R. Lösch, and W. Schlapp, “Influence of exciton localization on recombination line shapes: Inx Ga1−x As/GaAs quantum wells as a model,” Phys. Rev. B 46, 9873–9876 (1992).
[Crossref]

1991 (4)

R. Ferreira and G. Bastard, “Spin–flip scattering of holes in semiconductor quantum wells,” Phys. Rev. B 43, 9687–9691 (1991).
[Crossref]

T. C. Damen, L. Viña, J. E. Cunningham, J. Shah, and L. J. Sham, “Subpicosecond spin relaxation dynamics of exciton and free carriers in GaAs quantum wells,” Phys. Rev. Lett. 67, 3432–3435 (1991).
[Crossref] [PubMed]

R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher, and K. Ploog, “Exciton dynamics in a GaAs quantum well,” Phys. Rev. B 44, 1395–1398 (1991).
[Crossref]

B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Semarge, and D. S. Katzer, “Enhanced radiative recombination of free excitons in GaAs quantum wells,” Phys. Rev. Lett. 67, 2355–2358 (1991).
[Crossref] [PubMed]

1990 (3)

T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham, and J. M. Kuo, “Dynamics of exciton formation and relaxation in GaAs quantum wells,” Phys. Rev. B 42, 7434–7438 (1990).
[Crossref]

T. Uenoyama and L. J. Sham, “Hole relaxation and luminescence polarization in doped and undoped quantum wells,” Phys. Rev. Lett. 64, 3070–3073 (1990); T. Uenoyama and L. J. Sham, “Carrier relaxation and luminescence polarization in quantum wells,” Phys. Rev. B 42, 7114–7123 (1990).
[Crossref] [PubMed]

E. S. Koteles, D. A. Owens, D. C. Bertolet, J. Hsu, and K. M. Lau, “Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells,” Surf. Sci. 228, 314–317 (1990).
[Crossref]

1989 (2)

J. Kusano, Y. Segawa, Y. Aoyagi, S. Namba, and H. Okamoto, “Extremely slow energy relaxation of a two dimensional exciton in a GaAs superlattice structure,” Phys. Rev. B 40, 1685–1691 (1989).
[Crossref]

E. P. O’Reilly, “Valence band engineering in strained-layer structures,” Semicond. Sci. Technol. 4, 121–137 (1989).
[Crossref]

1988 (1)

B. D. C. Berolet, J. Hsu, and K. M. Lau, “Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition,” Appl. Phys. Lett. 53, 2501–2503 (1988).
[Crossref]

Amand, T.

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

Aoyagi, Y.

J. Kusano, Y. Segawa, Y. Aoyagi, S. Namba, and H. Okamoto, “Extremely slow energy relaxation of a two dimensional exciton in a GaAs superlattice structure,” Phys. Rev. B 40, 1685–1691 (1989).
[Crossref]

Bacquet, G.

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

Barrau, J.

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

Bastard, G.

G. Bastard and R. Ferreira, “Spin– flip scattering times in semiconductor quantum wells,” Surf. Sci. 267, 335–341 (1992).
[Crossref]

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

R. Ferreira and G. Bastard, “Spin–flip scattering of holes in semiconductor quantum wells,” Phys. Rev. B 43, 9687–9691 (1991).
[Crossref]

Baylac, B.

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

Berolet, B. D. C.

B. D. C. Berolet, J. Hsu, and K. M. Lau, “Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition,” Appl. Phys. Lett. 53, 2501–2503 (1988).
[Crossref]

Bertolet, D. C.

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, D. C. Bertolet, and K. M. Lau, “Magneto-optical properties of biaxially strained quantum wells,” Philos. Mag. B 70, 397–408 (1994).
[Crossref]

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

E. S. Koteles, D. A. Owens, D. C. Bertolet, J. Hsu, and K. M. Lau, “Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells,” Surf. Sci. 228, 314–317 (1990).
[Crossref]

Bimberg, B.

R. F. Schnabel, R. Zimmermann, B. Bimberg, H. Nickel, R. Lösch, and W. Schlapp, “Influence of exciton localization on recombination line shapes: Inx Ga1−x As/GaAs quantum wells as a model,” Phys. Rev. B 46, 9873–9876 (1992).
[Crossref]

Blom, P. W. M.

P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter, “Selective exciton formation in thin GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. Lett. 71, 3878–3881 (1993).
[Crossref] [PubMed]

Brosseau, M.

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

Carraresi, L.

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, and M. Colocci, “Dynamics of exciton relaxation in GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. B 45, 6965–6968 (1992).
[Crossref]

Chemla, D. S.

T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham, and J. M. Kuo, “Dynamics of exciton formation and relaxation in GaAs quantum wells,” Phys. Rev. B 42, 7434–7438 (1990).
[Crossref]

Clérot, F.

B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Semarge, and D. S. Katzer, “Enhanced radiative recombination of free excitons in GaAs quantum wells,” Phys. Rev. Lett. 67, 2355–2358 (1991).
[Crossref] [PubMed]

Colocci, M.

Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, and M. Colocci, “Dynamics of exciton relaxation in GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. B 45, 6965–6968 (1992).
[Crossref]

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

Cunningham, J. E.

T. C. Damen, L. Viña, J. E. Cunningham, J. Shah, and L. J. Sham, “Subpicosecond spin relaxation dynamics of exciton and free carriers in GaAs quantum wells,” Phys. Rev. Lett. 67, 3432–3435 (1991).
[Crossref] [PubMed]

T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham, and J. M. Kuo, “Dynamics of exciton formation and relaxation in GaAs quantum wells,” Phys. Rev. B 42, 7434–7438 (1990).
[Crossref]

Cuypers, J. P.

P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter, “Selective exciton formation in thin GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. Lett. 71, 3878–3881 (1993).
[Crossref] [PubMed]

Damen, T. C.

A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
[Crossref]

T. C. Damen, L. Viña, J. E. Cunningham, J. Shah, and L. J. Sham, “Subpicosecond spin relaxation dynamics of exciton and free carriers in GaAs quantum wells,” Phys. Rev. Lett. 67, 3432–3435 (1991).
[Crossref] [PubMed]

T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham, and J. M. Kuo, “Dynamics of exciton formation and relaxation in GaAs quantum wells,” Phys. Rev. B 42, 7434–7438 (1990).
[Crossref]

Dareys, B.

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

de Andrada e Silva, E. A.

M. Z. Maialle, E. A. de Andrada e Silva, and L. J. Sham, “Exciton spin dynamics in quantum wells,” Phys. Rev. B 47, 15776–15788 (1993).
[Crossref]

Delalande, C.

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, and M. Colocci, “Dynamics of exciton relaxation in GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. B 45, 6965–6968 (1992).
[Crossref]

Deveaud, B.

B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Semarge, and D. S. Katzer, “Enhanced radiative recombination of free excitons in GaAs quantum wells,” Phys. Rev. Lett. 67, 2355–2358 (1991).
[Crossref] [PubMed]

Dunstan, D. J.

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

Eccleston, R.

R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher, and K. Ploog, “Exciton dynamics in a GaAs quantum well,” Phys. Rev. B 44, 1395–1398 (1991).
[Crossref]

Etienne, B.

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

Fernández-Rossier, J.

L. Muñoz, E. Pérez, L. Viña, J. Fernández-Rossier, C. Tejedor, and K. Ploog, “Spin splitting of excitons in GaAs quantum wells at zero magnetic field,” Solid-State Electron. (to be published).

Ferreira, R.

G. Bastard and R. Ferreira, “Spin– flip scattering times in semiconductor quantum wells,” Surf. Sci. 267, 335–341 (1992).
[Crossref]

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

R. Ferreira and G. Bastard, “Spin–flip scattering of holes in semiconductor quantum wells,” Phys. Rev. B 43, 9687–9691 (1991).
[Crossref]

Feuerbacher, B. F.

R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher, and K. Ploog, “Exciton dynamics in a GaAs quantum well,” Phys. Rev. B 44, 1395–1398 (1991).
[Crossref]

Ghiti, A.

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

Hsu, J.

E. S. Koteles, D. A. Owens, D. C. Bertolet, J. Hsu, and K. M. Lau, “Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells,” Surf. Sci. 228, 314–317 (1990).
[Crossref]

B. D. C. Berolet, J. Hsu, and K. M. Lau, “Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition,” Appl. Phys. Lett. 53, 2501–2503 (1988).
[Crossref]

Katzer, D. S.

B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Semarge, and D. S. Katzer, “Enhanced radiative recombination of free excitons in GaAs quantum wells,” Phys. Rev. Lett. 67, 2355–2358 (1991).
[Crossref] [PubMed]

Kim, D. S.

A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
[Crossref]

Koteles, E. S.

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, D. C. Bertolet, and K. M. Lau, “Magneto-optical properties of biaxially strained quantum wells,” Philos. Mag. B 70, 397–408 (1994).
[Crossref]

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

E. S. Koteles, D. A. Owens, D. C. Bertolet, J. Hsu, and K. M. Lau, “Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells,” Surf. Sci. 228, 314–317 (1990).
[Crossref]

Kuhl, J.

R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher, and K. Ploog, “Exciton dynamics in a GaAs quantum well,” Phys. Rev. B 44, 1395–1398 (1991).
[Crossref]

Kuo, J. M.

T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham, and J. M. Kuo, “Dynamics of exciton formation and relaxation in GaAs quantum wells,” Phys. Rev. B 42, 7434–7438 (1990).
[Crossref]

Kusano, J.

J. Kusano, Y. Segawa, Y. Aoyagi, S. Namba, and H. Okamoto, “Extremely slow energy relaxation of a two dimensional exciton in a GaAs superlattice structure,” Phys. Rev. B 40, 1685–1691 (1989).
[Crossref]

Lau, K. M.

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, D. C. Bertolet, and K. M. Lau, “Magneto-optical properties of biaxially strained quantum wells,” Philos. Mag. B 70, 397–408 (1994).
[Crossref]

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

E. S. Koteles, D. A. Owens, D. C. Bertolet, J. Hsu, and K. M. Lau, “Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells,” Surf. Sci. 228, 314–317 (1990).
[Crossref]

B. D. C. Berolet, J. Hsu, and K. M. Lau, “Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition,” Appl. Phys. Lett. 53, 2501–2503 (1988).
[Crossref]

Lösch, R.

R. F. Schnabel, R. Zimmermann, B. Bimberg, H. Nickel, R. Lösch, and W. Schlapp, “Influence of exciton localization on recombination line shapes: Inx Ga1−x As/GaAs quantum wells as a model,” Phys. Rev. B 46, 9873–9876 (1992).
[Crossref]

Maialle, M. Z.

A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
[Crossref]

M. Z. Maialle, E. A. de Andrada e Silva, and L. J. Sham, “Exciton spin dynamics in quantum wells,” Phys. Rev. B 47, 15776–15788 (1993).
[Crossref]

Marie, X.

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

Martínez-Pastor, J.

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

Mestres, N.

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, D. C. Bertolet, and K. M. Lau, “Magneto-optical properties of biaxially strained quantum wells,” Philos. Mag. B 70, 397–408 (1994).
[Crossref]

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

Muñoz, L.

L. Muñoz, E. Pérez, L. Viña, and K. Ploog, “Spin relaxation in intrinsic GaAs quantum wells: influence of excitonic localization,” Phys. Rev. B 51, 4247–4257 (1995).
[Crossref]

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, D. C. Bertolet, and K. M. Lau, “Magneto-optical properties of biaxially strained quantum wells,” Philos. Mag. B 70, 397–408 (1994).
[Crossref]

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

L. Muñoz, E. Pérez, L. Viña, J. Fernández-Rossier, C. Tejedor, and K. Ploog, “Spin splitting of excitons in GaAs quantum wells at zero magnetic field,” Solid-State Electron. (to be published).

Namba, S.

J. Kusano, Y. Segawa, Y. Aoyagi, S. Namba, and H. Okamoto, “Extremely slow energy relaxation of a two dimensional exciton in a GaAs superlattice structure,” Phys. Rev. B 40, 1685–1691 (1989).
[Crossref]

Nickel, H.

R. F. Schnabel, R. Zimmermann, B. Bimberg, H. Nickel, R. Lösch, and W. Schlapp, “Influence of exciton localization on recombination line shapes: Inx Ga1−x As/GaAs quantum wells as a model,” Phys. Rev. B 46, 9873–9876 (1992).
[Crossref]

O’Reilly, E. P.

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

E. P. O’Reilly, “Valence band engineering in strained-layer structures,” Semicond. Sci. Technol. 4, 121–137 (1989).
[Crossref]

Oberli, D. Y.

T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham, and J. M. Kuo, “Dynamics of exciton formation and relaxation in GaAs quantum wells,” Phys. Rev. B 42, 7434–7438 (1990).
[Crossref]

Okamoto, H.

J. Kusano, Y. Segawa, Y. Aoyagi, S. Namba, and H. Okamoto, “Extremely slow energy relaxation of a two dimensional exciton in a GaAs superlattice structure,” Phys. Rev. B 40, 1685–1691 (1989).
[Crossref]

Owens, D. A.

E. S. Koteles, D. A. Owens, D. C. Bertolet, J. Hsu, and K. M. Lau, “Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells,” Surf. Sci. 228, 314–317 (1990).
[Crossref]

Palmier, J. F.

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

Pérez, E.

L. Muñoz, E. Pérez, L. Viña, and K. Ploog, “Spin relaxation in intrinsic GaAs quantum wells: influence of excitonic localization,” Phys. Rev. B 51, 4247–4257 (1995).
[Crossref]

L. Muñoz, E. Pérez, L. Viña, J. Fernández-Rossier, C. Tejedor, and K. Ploog, “Spin splitting of excitons in GaAs quantum wells at zero magnetic field,” Solid-State Electron. (to be published).

Pfeiffer, L. N.

A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
[Crossref]

Planel, R.

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

Ploog, K.

L. Muñoz, E. Pérez, L. Viña, and K. Ploog, “Spin relaxation in intrinsic GaAs quantum wells: influence of excitonic localization,” Phys. Rev. B 51, 4247–4257 (1995).
[Crossref]

R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher, and K. Ploog, “Exciton dynamics in a GaAs quantum well,” Phys. Rev. B 44, 1395–1398 (1991).
[Crossref]

L. Muñoz, E. Pérez, L. Viña, J. Fernández-Rossier, C. Tejedor, and K. Ploog, “Spin splitting of excitons in GaAs quantum wells at zero magnetic field,” Solid-State Electron. (to be published).

Razdobreev, I.

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

Rolland, P.

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

Roussignol, Ph.

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, and M. Colocci, “Dynamics of exciton relaxation in GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. B 45, 6965–6968 (1992).
[Crossref]

Roy, N.

B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Semarge, and D. S. Katzer, “Enhanced radiative recombination of free excitons in GaAs quantum wells,” Phys. Rev. Lett. 67, 2355–2358 (1991).
[Crossref] [PubMed]

Rühle, W. W.

R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher, and K. Ploog, “Exciton dynamics in a GaAs quantum well,” Phys. Rev. B 44, 1395–1398 (1991).
[Crossref]

Satzke, K.

B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Semarge, and D. S. Katzer, “Enhanced radiative recombination of free excitons in GaAs quantum wells,” Phys. Rev. Lett. 67, 2355–2358 (1991).
[Crossref] [PubMed]

Schlapp, W.

R. F. Schnabel, R. Zimmermann, B. Bimberg, H. Nickel, R. Lösch, and W. Schlapp, “Influence of exciton localization on recombination line shapes: Inx Ga1−x As/GaAs quantum wells as a model,” Phys. Rev. B 46, 9873–9876 (1992).
[Crossref]

Schnabel, R. F.

R. F. Schnabel, R. Zimmermann, B. Bimberg, H. Nickel, R. Lösch, and W. Schlapp, “Influence of exciton localization on recombination line shapes: Inx Ga1−x As/GaAs quantum wells as a model,” Phys. Rev. B 46, 9873–9876 (1992).
[Crossref]

Segawa, Y.

J. Kusano, Y. Segawa, Y. Aoyagi, S. Namba, and H. Okamoto, “Extremely slow energy relaxation of a two dimensional exciton in a GaAs superlattice structure,” Phys. Rev. B 40, 1685–1691 (1989).
[Crossref]

Semarge, B.

B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Semarge, and D. S. Katzer, “Enhanced radiative recombination of free excitons in GaAs quantum wells,” Phys. Rev. Lett. 67, 2355–2358 (1991).
[Crossref] [PubMed]

Shah, J.

A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
[Crossref]

T. C. Damen, L. Viña, J. E. Cunningham, J. Shah, and L. J. Sham, “Subpicosecond spin relaxation dynamics of exciton and free carriers in GaAs quantum wells,” Phys. Rev. Lett. 67, 3432–3435 (1991).
[Crossref] [PubMed]

T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham, and J. M. Kuo, “Dynamics of exciton formation and relaxation in GaAs quantum wells,” Phys. Rev. B 42, 7434–7438 (1990).
[Crossref]

Sham, L. J.

A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
[Crossref]

M. Z. Maialle, E. A. de Andrada e Silva, and L. J. Sham, “Exciton spin dynamics in quantum wells,” Phys. Rev. B 47, 15776–15788 (1993).
[Crossref]

T. C. Damen, L. Viña, J. E. Cunningham, J. Shah, and L. J. Sham, “Subpicosecond spin relaxation dynamics of exciton and free carriers in GaAs quantum wells,” Phys. Rev. Lett. 67, 3432–3435 (1991).
[Crossref] [PubMed]

T. Uenoyama and L. J. Sham, “Hole relaxation and luminescence polarization in doped and undoped quantum wells,” Phys. Rev. Lett. 64, 3070–3073 (1990); T. Uenoyama and L. J. Sham, “Carrier relaxation and luminescence polarization in quantum wells,” Phys. Rev. B 42, 7114–7123 (1990).
[Crossref] [PubMed]

Smit, C.

P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter, “Selective exciton formation in thin GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. Lett. 71, 3878–3881 (1993).
[Crossref] [PubMed]

Strobel, R.

R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher, and K. Ploog, “Exciton dynamics in a GaAs quantum well,” Phys. Rev. B 44, 1395–1398 (1991).
[Crossref]

Tejedor, C.

L. Muñoz, E. Pérez, L. Viña, J. Fernández-Rossier, C. Tejedor, and K. Ploog, “Spin splitting of excitons in GaAs quantum wells at zero magnetic field,” Solid-State Electron. (to be published).

Uenoyama, T.

T. Uenoyama and L. J. Sham, “Hole relaxation and luminescence polarization in doped and undoped quantum wells,” Phys. Rev. Lett. 64, 3070–3073 (1990); T. Uenoyama and L. J. Sham, “Carrier relaxation and luminescence polarization in quantum wells,” Phys. Rev. B 42, 7114–7123 (1990).
[Crossref] [PubMed]

van Hall, P. J.

P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter, “Selective exciton formation in thin GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. Lett. 71, 3878–3881 (1993).
[Crossref] [PubMed]

Viña, L.

L. Muñoz, E. Pérez, L. Viña, and K. Ploog, “Spin relaxation in intrinsic GaAs quantum wells: influence of excitonic localization,” Phys. Rev. B 51, 4247–4257 (1995).
[Crossref]

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, D. C. Bertolet, and K. M. Lau, “Magneto-optical properties of biaxially strained quantum wells,” Philos. Mag. B 70, 397–408 (1994).
[Crossref]

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

T. C. Damen, L. Viña, J. E. Cunningham, J. Shah, and L. J. Sham, “Subpicosecond spin relaxation dynamics of exciton and free carriers in GaAs quantum wells,” Phys. Rev. Lett. 67, 3432–3435 (1991).
[Crossref] [PubMed]

L. Muñoz, E. Pérez, L. Viña, J. Fernández-Rossier, C. Tejedor, and K. Ploog, “Spin splitting of excitons in GaAs quantum wells at zero magnetic field,” Solid-State Electron. (to be published).

Vinattieri, A.

A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
[Crossref]

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, and M. Colocci, “Dynamics of exciton relaxation in GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. B 45, 6965–6968 (1992).
[Crossref]

Wolter, J. H.

P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter, “Selective exciton formation in thin GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. Lett. 71, 3878–3881 (1993).
[Crossref] [PubMed]

Zimmermann, R.

R. F. Schnabel, R. Zimmermann, B. Bimberg, H. Nickel, R. Lösch, and W. Schlapp, “Influence of exciton localization on recombination line shapes: Inx Ga1−x As/GaAs quantum wells as a model,” Phys. Rev. B 46, 9873–9876 (1992).
[Crossref]

Appl. Phys. Lett. (1)

B. D. C. Berolet, J. Hsu, and K. M. Lau, “Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition,” Appl. Phys. Lett. 53, 2501–2503 (1988).
[Crossref]

Philos. Mag. B (1)

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, D. C. Bertolet, and K. M. Lau, “Magneto-optical properties of biaxially strained quantum wells,” Philos. Mag. B 70, 397–408 (1994).
[Crossref]

Phys. Rev. B (11)

L. Viña, L. Muñoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O’Reilly, D. C. Bertolet, and K. M. Lau, “Valence-band-shape modification due to band coupling in strained quantum wells,” Phys. Rev. B 47, 13926–13929 (1993).
[Crossref]

R. F. Schnabel, R. Zimmermann, B. Bimberg, H. Nickel, R. Lösch, and W. Schlapp, “Influence of exciton localization on recombination line shapes: Inx Ga1−x As/GaAs quantum wells as a model,” Phys. Rev. B 46, 9873–9876 (1992).
[Crossref]

R. Ferreira and G. Bastard, “Spin–flip scattering of holes in semiconductor quantum wells,” Phys. Rev. B 43, 9687–9691 (1991).
[Crossref]

Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martínez-Pastor, L. Carraresi, M. Colocci, J. F. Palmier, and B. Etienne, “Hole polarization and slow hole-spin relaxation in an n-doped quantum well structure,” Phys. Rev. B 46, 7292–7295 (1992).
[Crossref]

M. Z. Maialle, E. A. de Andrada e Silva, and L. J. Sham, “Exciton spin dynamics in quantum wells,” Phys. Rev. B 47, 15776–15788 (1993).
[Crossref]

L. Muñoz, E. Pérez, L. Viña, and K. Ploog, “Spin relaxation in intrinsic GaAs quantum wells: influence of excitonic localization,” Phys. Rev. B 51, 4247–4257 (1995).
[Crossref]

J. Kusano, Y. Segawa, Y. Aoyagi, S. Namba, and H. Okamoto, “Extremely slow energy relaxation of a two dimensional exciton in a GaAs superlattice structure,” Phys. Rev. B 40, 1685–1691 (1989).
[Crossref]

T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham, and J. M. Kuo, “Dynamics of exciton formation and relaxation in GaAs quantum wells,” Phys. Rev. B 42, 7434–7438 (1990).
[Crossref]

R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher, and K. Ploog, “Exciton dynamics in a GaAs quantum well,” Phys. Rev. B 44, 1395–1398 (1991).
[Crossref]

Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, and M. Colocci, “Dynamics of exciton relaxation in GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. B 45, 6965–6968 (1992).
[Crossref]

A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton dynamics in GaAs quantum wells under resonant excitation,” Phys. Rev. B 50, 10868–10879 (1994).
[Crossref]

Phys. Rev. Lett. (4)

T. Uenoyama and L. J. Sham, “Hole relaxation and luminescence polarization in doped and undoped quantum wells,” Phys. Rev. Lett. 64, 3070–3073 (1990); T. Uenoyama and L. J. Sham, “Carrier relaxation and luminescence polarization in quantum wells,” Phys. Rev. B 42, 7114–7123 (1990).
[Crossref] [PubMed]

P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter, “Selective exciton formation in thin GaAs/Alx Ga1−x As quantum wells,” Phys. Rev. Lett. 71, 3878–3881 (1993).
[Crossref] [PubMed]

B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Semarge, and D. S. Katzer, “Enhanced radiative recombination of free excitons in GaAs quantum wells,” Phys. Rev. Lett. 67, 2355–2358 (1991).
[Crossref] [PubMed]

T. C. Damen, L. Viña, J. E. Cunningham, J. Shah, and L. J. Sham, “Subpicosecond spin relaxation dynamics of exciton and free carriers in GaAs quantum wells,” Phys. Rev. Lett. 67, 3432–3435 (1991).
[Crossref] [PubMed]

Semicond. Sci. Technol. (2)

B. Baylac, T. Amand, M. Brosseau, X. Marie, B. Dareys, G. Bacquet, J. Barrau, and R. Planel, “Exciton spin relaxation in the 2D dense excitonic phase: the role of exchange interaction,” Semicond. Sci. Technol. 10, 295–301 (1995).
[Crossref]

E. P. O’Reilly, “Valence band engineering in strained-layer structures,” Semicond. Sci. Technol. 4, 121–137 (1989).
[Crossref]

Solid State Commun. (1)

B. Dareys, X. Marie, T. Amand, B. Baylac, J. Barrau, I. Razdobreev, M. Brosseau, and D. J. Dunstan, “Exciton formation in quantum wells,” Solid State Commun. 90, 237–240 (1994).
[Crossref]

Surf. Sci. (2)

G. Bastard and R. Ferreira, “Spin– flip scattering times in semiconductor quantum wells,” Surf. Sci. 267, 335–341 (1992).
[Crossref]

E. S. Koteles, D. A. Owens, D. C. Bertolet, J. Hsu, and K. M. Lau, “Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells,” Surf. Sci. 228, 314–317 (1990).
[Crossref]

Other (2)

The generation of the second harmonic of the delayed pulse in the upconversion spectrometer hinders the observation of the PL.

L. Muñoz, E. Pérez, L. Viña, J. Fernández-Rossier, C. Tejedor, and K. Ploog, “Spin splitting of excitons in GaAs quantum wells at zero magnetic field,” Solid-State Electron. (to be published).

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Figures (5)

Fig. 1
Fig. 1

Time evolution of the sum of the σ+ and the σ components of the luminescence of the GaAs/AlAs MQW. Curve (a), excitation at 1.617 eV (filled circles). Curve (b), excitation at 1.630 eV (open circles). The inset shows the cw PL (thick curve), and the PLE spectra (thin curve) of the GaAs/AlAs sample.

Fig. 2
Fig. 2

Time evolution of the sum of the σ+ and the σ components of the luminescence of the GaAs/AlAs MQW for two different excitation energies, 1.625 eV (filled squares) and 1.666 eV (open squares).

Fig. 3
Fig. 3

PLE spectra of GaAs1−xPx/Al0.35Ga0.65As QW’s of 80- and 120-Å widths (filled and open circles, respectively), and of different phosphorous contents, x. The measurements were performed at 2 K, with excitation by σ+-polarized light and detection of the σ+ emission.

Fig. 4
Fig. 4

Normalized time evolution of the sum of the σ+ and the σ components of the PL for the 80-Å wide WQ’s with P contents of 8% (dotted curve) and 5% (solid curve). In both cases the excitation was done above the continuum edge.

Fig. 5
Fig. 5

Dependence of the polarization decay time (filled circles) as a function of excitation energy for the GaAs/AlAs MQW. The solid curve depicts the PLE spectrum. The inset shows the time evolution of the polarization (open circles) and the best fit to a monoexponential decay (line) exciting at 1.63 eV.

Tables (1)

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Table 1 Values Obtained by Excitation above the Continuum Edgea

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