Abstract

Ellipsometry is often used for determining the dielectric constant and thickness of a layer on a substrate. Typical curves for constant values of the coefficient of ellipticity and the Brewster angle in the dielectric constant-layer-thickness plane for nonabsorbing layers on a silicon substrate are presented. These isoellipsometric curves provide an immediate graphical solution for the characteristic properties of the layer for a measured pair of ellipsometric parameters and also an estimate of the errors in the deduced values.

© 1991 Optical Society of America

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