Abstract

We present a new model in which the drift of photoinduced carriers in the transverse direction of a Bi12SiO20 single-crystal plate is newly taken into account in addition to the drift in the longitudinal direction considered with the previous models. According to the new model, the charge distributions in the crystal plate are calculated by an iterative method and the electric potentials in the device by the boundary element method. The modulation transfer function curve is obtained from the potentials and compared with the experimental one. The calculated result agrees fairly well with the experimental result in the entire region of spatial frequency. It is shown that the transverse drift of carriers in the crystal plate plays an important role in the write-in process of a Pockels readout optical modulator device and under certain operational conditions cannot be disregarded in the calculation of the modulation transfer function curve of the device.

© 1989 Optical Society of America

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