Abstract

Dielectric waveguide resonant underlayers are employed in ultra-high NA interference photolithography to effectively double the depth of field. Generally a single high refractive index waveguiding layer is employed. Here multilayer Herpin effective medium methods are explored to develop equivalent multilayer waveguiding layers. Herpin equivalent resonant underlayers are shown to be suitable replacements provided at least one layer within the Herpin trilayer supports propagating fields. In addition, a method of increasing the intensity incident upon the photoresist using resonant overlayers is also developed. This method is shown to greatly enhance the intensity within the photoresist making the use of thicker, safer, non-absorbing, low refractive index matching liquids potentially suitable for large-scale applications.

© 2017 Optical Society of America

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