Abstract

The multiple-angle-of-incidence ellipsometric study of polycrystalline Si deposited on oxidized single-crystal Si is presented. The complex index of refraction of polycrystalline Si, 3.936 + i.040 at 632.8 nm, and the film thicknesses are obtained with high precision for the optimum thicknesses of a SiO2 layer predicted numerically.

© 1985 Optical Society of America

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