Abstract

We describe a postgrowth method to produce passband filters with different center wavelengths from a single growth run by irreversibly changing the refractive index of a layer or a series of layers within the filter. This leads to a new type of filter, the passband-shifting filter, whose center wavelength can be irreversibly shifted from λ0 to λ0-Δλ after the filter has been grown. The passband shift can be controlled exactly by proper design of the multilayer. We present the theory behind passband-shifting-filter design along with transfer-matrix simulations and preliminary experimental results for a two-cavity filter, using lateral oxidation of AlxGa1-xAs-based materials to effect the passband shift.

© 2002 Optical Society of America

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  14. M. Ochiai, G. E. Giudice, H. Temkin, J. W. Scott, T. M. Cockerill, “Kinetics of thermal oxidation of AlAs in water vapor,” Appl. Phys. Lett. 68, 1898–1900 (1996).
    [CrossRef]
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    [CrossRef]
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  18. K. D. Choquette, K. L. Lear, R. P. Schneider, K. M. Geib, J. J. Figiel, R. Hull, “Wavelength insensitive performance of robust selectively oxidized vertical-cavity lasers,” IEEE Photonics Technol. Lett. 7, 1237–1239 (1995).
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  23. S. Guha, F. Agahi, B. Pezeshki, J. A. Kash, D. W. Kisker, N. A. Bojarczuk, “Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation,” Appl. Phys. Lett. 68, 906–908 (1996).
    [CrossRef]
  24. R. L. Naone, L. A. Coldren, “Surface energy model for the thickness dependence of the lateral oxidation of AlAs,” J. Appl. Phys. 82, 2277–2280 (1997).
    [CrossRef]
  25. R. J. Deri, M. A. Emanuel, “Consistent formula for the refractive index of AlxGa1-xAs below the band edge,” J. Appl. Phys. 77, 4667–4672 (1995).
    [CrossRef]
  26. R. J. Deri, TeraWave Communications, Inc., 30680 Huntwood Avenue, Hayward, Calif. 94544 (personal communication, 1999).
  27. R. R. Patel, “Development of components for wavelength division multiplexing over parallel optical interconnects,” Ph.D. dissertation (University of California, Davis, Calif., 2001).
  28. O. Blum, C. I. H. Ashby, H. Q. Hou, “Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements,” Appl. Phys. Lett. 70, 2870–2872 (1997).
    [CrossRef]

2000 (1)

S. Toyoda, N. Ooba, A. Kaneko, M. Hikita, T. Kurihara, T. Maruno, “Wideband polymer thermo-optic wavelength tunable filter with fast response for WDM systems,” Electron. Lett. 36, 658–660 (2000).
[CrossRef]

1999 (1)

C. I. H. Ashby, M. M. Bridges, A. A. Allerman, B. E. Hammons, H. Q. Hong, “Origin of the time dependence of wet oxidation of AlGaAs,” Appl. Phys. Lett. 75, 73–75 (1999).
[CrossRef]

1998 (1)

A. Fiore, A. Akulova, J. Ko, E. R. Hegblom, L. A. Coldren, “Multiple-wavelength ertical-cavity laser arrays based on post-growth lateral–vertical oxidation of AlGaAs,” Appl. Phys. Lett. 73, 282–284 (1998).
[CrossRef]

1997 (4)

M. H. MacDougal, P. D. Dapkus, “Wavelength shift of selectively oxidized AlxOy–AlGaAs–GaAs distributed Bragg reflectors,” IEEE Photon. Technol. Lett. 9, 884–886 (1997).
[CrossRef]

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

R. L. Naone, L. A. Coldren, “Surface energy model for the thickness dependence of the lateral oxidation of AlAs,” J. Appl. Phys. 82, 2277–2280 (1997).
[CrossRef]

O. Blum, C. I. H. Ashby, H. Q. Hou, “Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements,” Appl. Phys. Lett. 70, 2870–2872 (1997).
[CrossRef]

1996 (5)

J. H. Kim, D. H. Lim, K. S. Kim, G. M. Yang, K. Y. Lim, H. J. Lee, “Lateral wet oxidation of AlxGa1-xAs depending on its structures,” Appl. Phys. Lett. 69, 3357–3359 (1996).
[CrossRef]

S. Guha, F. Agahi, B. Pezeshki, J. A. Kash, D. W. Kisker, N. A. Bojarczuk, “Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation,” Appl. Phys. Lett. 68, 906–908 (1996).
[CrossRef]

M. Ochiai, G. E. Giudice, H. Temkin, J. W. Scott, T. M. Cockerill, “Kinetics of thermal oxidation of AlAs in water vapor,” Appl. Phys. Lett. 68, 1898–1900 (1996).
[CrossRef]

R. D. Twesten, D. M. Follstaedt, K. D. Choquette, R. P. Schneider, “Microstructure of laterally oxidized AlxGa1-xAs layers in vertical-cavity lasers,” Appl. Phys. Lett. 69, 19–21 (1996).
[CrossRef]

K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, R. Hull, “Selective oxidation of AlGaAs versus AlAs,” Appl. Phys. Lett. 69, 1385–1387 (1996).
[CrossRef]

1995 (2)

K. D. Choquette, K. L. Lear, R. P. Schneider, K. M. Geib, J. J. Figiel, R. Hull, “Wavelength insensitive performance of robust selectively oxidized vertical-cavity lasers,” IEEE Photonics Technol. Lett. 7, 1237–1239 (1995).
[CrossRef]

R. J. Deri, M. A. Emanuel, “Consistent formula for the refractive index of AlxGa1-xAs below the band edge,” J. Appl. Phys. 77, 4667–4672 (1995).
[CrossRef]

1994 (2)

R. S. Burton, T. E. Schlesinger, “Wet thermal oxidation of AlxGa1-xAs compounds,” J. Appl. Phys. 76, 5503–5507 (1994).
[CrossRef]

D. L. Huffaker, D. G. Deppe, K. Kumar, T. J. Rogers, “Native-oxide defined ring contact for low threshold vertical-cavity lasers,” Appl. Phys. Lett. 65, 97–99 (1994).
[CrossRef]

1993 (1)

A. R. Sugg, E. I. Chen, N. Holonyak, K. C. Hsieh, J. E. Baker, N. Finnegan, “Effects of low-temperature an-nealing on the native oxide of AlxGa1-xAs,” J. Appl. Phys. 74, 3880–3885 (1993).
[CrossRef]

1991 (1)

J. M. Dallesasse, N. Holonyak, “Native-oxide stripe-geometry AlxGa1-xAs–GaAs quantum well heterostructure lasers,” Appl. Phys. Lett. 58, 394–396 (1991).
[CrossRef]

1990 (1)

J. M. Dallesasse, N. Holonyak, A. R. Sugg, T. A. Richard, N. El-Zein, “Hydrolyzation oxidation of AlxGa1-xAs–AlAs-GaAs quantum well heterostructures and super lattices,” Appl. Phys. Lett. 57, 2844–2846 (1990).
[CrossRef]

1978 (1)

1966 (1)

A. Thelen, “Equivalent layers in multilayer filters,” J. Opt. Soc. Am. 56, 533–538 (1966).
[CrossRef]

1965 (1)

B. E. Deal, A. S. Grove, “General relationship for the thermal oxidation of silicon,” J. Appl. Phys. 36, 3770–3778 (1965).
[CrossRef]

1964 (1)

R. H. Doremus, “Exchange and diffusion of ions in glass,” J. Phys. Chem. 68, 2212–2218 (1964).
[CrossRef]

1952 (1)

1947 (1)

A. Herpin, “Calcul du pouvoir réflecteur d’un système stratifié quelconque,” C. R. Acad. Sci. 225, 182–183 (1947).

Agahi, F.

S. Guha, F. Agahi, B. Pezeshki, J. A. Kash, D. W. Kisker, N. A. Bojarczuk, “Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation,” Appl. Phys. Lett. 68, 906–908 (1996).
[CrossRef]

Akulova, A.

A. Fiore, A. Akulova, J. Ko, E. R. Hegblom, L. A. Coldren, “Multiple-wavelength ertical-cavity laser arrays based on post-growth lateral–vertical oxidation of AlGaAs,” Appl. Phys. Lett. 73, 282–284 (1998).
[CrossRef]

Allerman, A. A.

C. I. H. Ashby, M. M. Bridges, A. A. Allerman, B. E. Hammons, H. Q. Hong, “Origin of the time dependence of wet oxidation of AlGaAs,” Appl. Phys. Lett. 75, 73–75 (1999).
[CrossRef]

Ashby, C. I. H.

C. I. H. Ashby, M. M. Bridges, A. A. Allerman, B. E. Hammons, H. Q. Hong, “Origin of the time dependence of wet oxidation of AlGaAs,” Appl. Phys. Lett. 75, 73–75 (1999).
[CrossRef]

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

O. Blum, C. I. H. Ashby, H. Q. Hou, “Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements,” Appl. Phys. Lett. 70, 2870–2872 (1997).
[CrossRef]

Baker, J. E.

A. R. Sugg, E. I. Chen, N. Holonyak, K. C. Hsieh, J. E. Baker, N. Finnegan, “Effects of low-temperature an-nealing on the native oxide of AlxGa1-xAs,” J. Appl. Phys. 74, 3880–3885 (1993).
[CrossRef]

Blum, O.

O. Blum, C. I. H. Ashby, H. Q. Hou, “Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements,” Appl. Phys. Lett. 70, 2870–2872 (1997).
[CrossRef]

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

Bojarczuk, N. A.

S. Guha, F. Agahi, B. Pezeshki, J. A. Kash, D. W. Kisker, N. A. Bojarczuk, “Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation,” Appl. Phys. Lett. 68, 906–908 (1996).
[CrossRef]

Boyd, R. W.

R. W. Boyd, Nonlinear Optics (Academic, San Diego, Calif., 1992).

Bridges, M. M.

C. I. H. Ashby, M. M. Bridges, A. A. Allerman, B. E. Hammons, H. Q. Hong, “Origin of the time dependence of wet oxidation of AlGaAs,” Appl. Phys. Lett. 75, 73–75 (1999).
[CrossRef]

Burton, R. S.

R. S. Burton, T. E. Schlesinger, “Wet thermal oxidation of AlxGa1-xAs compounds,” J. Appl. Phys. 76, 5503–5507 (1994).
[CrossRef]

Chen, E. I.

A. R. Sugg, E. I. Chen, N. Holonyak, K. C. Hsieh, J. E. Baker, N. Finnegan, “Effects of low-temperature an-nealing on the native oxide of AlxGa1-xAs,” J. Appl. Phys. 74, 3880–3885 (1993).
[CrossRef]

Choquette, K. D.

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

R. D. Twesten, D. M. Follstaedt, K. D. Choquette, R. P. Schneider, “Microstructure of laterally oxidized AlxGa1-xAs layers in vertical-cavity lasers,” Appl. Phys. Lett. 69, 19–21 (1996).
[CrossRef]

K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, R. Hull, “Selective oxidation of AlGaAs versus AlAs,” Appl. Phys. Lett. 69, 1385–1387 (1996).
[CrossRef]

K. D. Choquette, K. L. Lear, R. P. Schneider, K. M. Geib, J. J. Figiel, R. Hull, “Wavelength insensitive performance of robust selectively oxidized vertical-cavity lasers,” IEEE Photonics Technol. Lett. 7, 1237–1239 (1995).
[CrossRef]

Chui, H. C.

K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, R. Hull, “Selective oxidation of AlGaAs versus AlAs,” Appl. Phys. Lett. 69, 1385–1387 (1996).
[CrossRef]

Cockerill, T. M.

M. Ochiai, G. E. Giudice, H. Temkin, J. W. Scott, T. M. Cockerill, “Kinetics of thermal oxidation of AlAs in water vapor,” Appl. Phys. Lett. 68, 1898–1900 (1996).
[CrossRef]

Coldren, L. A.

A. Fiore, A. Akulova, J. Ko, E. R. Hegblom, L. A. Coldren, “Multiple-wavelength ertical-cavity laser arrays based on post-growth lateral–vertical oxidation of AlGaAs,” Appl. Phys. Lett. 73, 282–284 (1998).
[CrossRef]

R. L. Naone, L. A. Coldren, “Surface energy model for the thickness dependence of the lateral oxidation of AlAs,” J. Appl. Phys. 82, 2277–2280 (1997).
[CrossRef]

Dallesasse, J. M.

J. M. Dallesasse, N. Holonyak, “Native-oxide stripe-geometry AlxGa1-xAs–GaAs quantum well heterostructure lasers,” Appl. Phys. Lett. 58, 394–396 (1991).
[CrossRef]

J. M. Dallesasse, N. Holonyak, A. R. Sugg, T. A. Richard, N. El-Zein, “Hydrolyzation oxidation of AlxGa1-xAs–AlAs-GaAs quantum well heterostructures and super lattices,” Appl. Phys. Lett. 57, 2844–2846 (1990).
[CrossRef]

Dapkus, P. D.

M. H. MacDougal, P. D. Dapkus, “Wavelength shift of selectively oxidized AlxOy–AlGaAs–GaAs distributed Bragg reflectors,” IEEE Photon. Technol. Lett. 9, 884–886 (1997).
[CrossRef]

Deal, B. E.

B. E. Deal, A. S. Grove, “General relationship for the thermal oxidation of silicon,” J. Appl. Phys. 36, 3770–3778 (1965).
[CrossRef]

Deppe, D. G.

D. L. Huffaker, D. G. Deppe, K. Kumar, T. J. Rogers, “Native-oxide defined ring contact for low threshold vertical-cavity lasers,” Appl. Phys. Lett. 65, 97–99 (1994).
[CrossRef]

Deri, R. J.

R. J. Deri, M. A. Emanuel, “Consistent formula for the refractive index of AlxGa1-xAs below the band edge,” J. Appl. Phys. 77, 4667–4672 (1995).
[CrossRef]

R. J. Deri, TeraWave Communications, Inc., 30680 Huntwood Avenue, Hayward, Calif. 94544 (personal communication, 1999).

Doremus, R. H.

R. H. Doremus, “Exchange and diffusion of ions in glass,” J. Phys. Chem. 68, 2212–2218 (1964).
[CrossRef]

Drummond, T. J.

K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, R. Hull, “Selective oxidation of AlGaAs versus AlAs,” Appl. Phys. Lett. 69, 1385–1387 (1996).
[CrossRef]

El-Zein, N.

J. M. Dallesasse, N. Holonyak, A. R. Sugg, T. A. Richard, N. El-Zein, “Hydrolyzation oxidation of AlxGa1-xAs–AlAs-GaAs quantum well heterostructures and super lattices,” Appl. Phys. Lett. 57, 2844–2846 (1990).
[CrossRef]

Emanuel, M. A.

R. J. Deri, M. A. Emanuel, “Consistent formula for the refractive index of AlxGa1-xAs below the band edge,” J. Appl. Phys. 77, 4667–4672 (1995).
[CrossRef]

Epstein, L. I.

Figiel, J. J.

K. D. Choquette, K. L. Lear, R. P. Schneider, K. M. Geib, J. J. Figiel, R. Hull, “Wavelength insensitive performance of robust selectively oxidized vertical-cavity lasers,” IEEE Photonics Technol. Lett. 7, 1237–1239 (1995).
[CrossRef]

Finnegan, N.

A. R. Sugg, E. I. Chen, N. Holonyak, K. C. Hsieh, J. E. Baker, N. Finnegan, “Effects of low-temperature an-nealing on the native oxide of AlxGa1-xAs,” J. Appl. Phys. 74, 3880–3885 (1993).
[CrossRef]

Fiore, A.

A. Fiore, A. Akulova, J. Ko, E. R. Hegblom, L. A. Coldren, “Multiple-wavelength ertical-cavity laser arrays based on post-growth lateral–vertical oxidation of AlGaAs,” Appl. Phys. Lett. 73, 282–284 (1998).
[CrossRef]

Follstaedt, D. M.

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

R. D. Twesten, D. M. Follstaedt, K. D. Choquette, R. P. Schneider, “Microstructure of laterally oxidized AlxGa1-xAs layers in vertical-cavity lasers,” Appl. Phys. Lett. 69, 19–21 (1996).
[CrossRef]

Geib, K. M.

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, R. Hull, “Selective oxidation of AlGaAs versus AlAs,” Appl. Phys. Lett. 69, 1385–1387 (1996).
[CrossRef]

K. D. Choquette, K. L. Lear, R. P. Schneider, K. M. Geib, J. J. Figiel, R. Hull, “Wavelength insensitive performance of robust selectively oxidized vertical-cavity lasers,” IEEE Photonics Technol. Lett. 7, 1237–1239 (1995).
[CrossRef]

Giudice, G. E.

M. Ochiai, G. E. Giudice, H. Temkin, J. W. Scott, T. M. Cockerill, “Kinetics of thermal oxidation of AlAs in water vapor,” Appl. Phys. Lett. 68, 1898–1900 (1996).
[CrossRef]

Grove, A. S.

B. E. Deal, A. S. Grove, “General relationship for the thermal oxidation of silicon,” J. Appl. Phys. 36, 3770–3778 (1965).
[CrossRef]

Guha, S.

S. Guha, F. Agahi, B. Pezeshki, J. A. Kash, D. W. Kisker, N. A. Bojarczuk, “Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation,” Appl. Phys. Lett. 68, 906–908 (1996).
[CrossRef]

Hammons, B. E.

C. I. H. Ashby, M. M. Bridges, A. A. Allerman, B. E. Hammons, H. Q. Hong, “Origin of the time dependence of wet oxidation of AlGaAs,” Appl. Phys. Lett. 75, 73–75 (1999).
[CrossRef]

K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, R. Hull, “Selective oxidation of AlGaAs versus AlAs,” Appl. Phys. Lett. 69, 1385–1387 (1996).
[CrossRef]

Hammons, E. B.

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

Hegblom, E. R.

A. Fiore, A. Akulova, J. Ko, E. R. Hegblom, L. A. Coldren, “Multiple-wavelength ertical-cavity laser arrays based on post-growth lateral–vertical oxidation of AlGaAs,” Appl. Phys. Lett. 73, 282–284 (1998).
[CrossRef]

Herpin, A.

A. Herpin, “Calcul du pouvoir réflecteur d’un système stratifié quelconque,” C. R. Acad. Sci. 225, 182–183 (1947).

Hikita, M.

S. Toyoda, N. Ooba, A. Kaneko, M. Hikita, T. Kurihara, T. Maruno, “Wideband polymer thermo-optic wavelength tunable filter with fast response for WDM systems,” Electron. Lett. 36, 658–660 (2000).
[CrossRef]

Holonyak, N.

A. R. Sugg, E. I. Chen, N. Holonyak, K. C. Hsieh, J. E. Baker, N. Finnegan, “Effects of low-temperature an-nealing on the native oxide of AlxGa1-xAs,” J. Appl. Phys. 74, 3880–3885 (1993).
[CrossRef]

J. M. Dallesasse, N. Holonyak, “Native-oxide stripe-geometry AlxGa1-xAs–GaAs quantum well heterostructure lasers,” Appl. Phys. Lett. 58, 394–396 (1991).
[CrossRef]

J. M. Dallesasse, N. Holonyak, A. R. Sugg, T. A. Richard, N. El-Zein, “Hydrolyzation oxidation of AlxGa1-xAs–AlAs-GaAs quantum well heterostructures and super lattices,” Appl. Phys. Lett. 57, 2844–2846 (1990).
[CrossRef]

Hong, H. Q.

C. I. H. Ashby, M. M. Bridges, A. A. Allerman, B. E. Hammons, H. Q. Hong, “Origin of the time dependence of wet oxidation of AlGaAs,” Appl. Phys. Lett. 75, 73–75 (1999).
[CrossRef]

Hou, H. Q.

O. Blum, C. I. H. Ashby, H. Q. Hou, “Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements,” Appl. Phys. Lett. 70, 2870–2872 (1997).
[CrossRef]

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, R. Hull, “Selective oxidation of AlGaAs versus AlAs,” Appl. Phys. Lett. 69, 1385–1387 (1996).
[CrossRef]

Hsieh, K. C.

A. R. Sugg, E. I. Chen, N. Holonyak, K. C. Hsieh, J. E. Baker, N. Finnegan, “Effects of low-temperature an-nealing on the native oxide of AlxGa1-xAs,” J. Appl. Phys. 74, 3880–3885 (1993).
[CrossRef]

Huffaker, D. L.

D. L. Huffaker, D. G. Deppe, K. Kumar, T. J. Rogers, “Native-oxide defined ring contact for low threshold vertical-cavity lasers,” Appl. Phys. Lett. 65, 97–99 (1994).
[CrossRef]

Hull, R.

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, R. Hull, “Selective oxidation of AlGaAs versus AlAs,” Appl. Phys. Lett. 69, 1385–1387 (1996).
[CrossRef]

K. D. Choquette, K. L. Lear, R. P. Schneider, K. M. Geib, J. J. Figiel, R. Hull, “Wavelength insensitive performance of robust selectively oxidized vertical-cavity lasers,” IEEE Photonics Technol. Lett. 7, 1237–1239 (1995).
[CrossRef]

Kaneko, A.

S. Toyoda, N. Ooba, A. Kaneko, M. Hikita, T. Kurihara, T. Maruno, “Wideband polymer thermo-optic wavelength tunable filter with fast response for WDM systems,” Electron. Lett. 36, 658–660 (2000).
[CrossRef]

Kash, J. A.

S. Guha, F. Agahi, B. Pezeshki, J. A. Kash, D. W. Kisker, N. A. Bojarczuk, “Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation,” Appl. Phys. Lett. 68, 906–908 (1996).
[CrossRef]

Kim, J. H.

J. H. Kim, D. H. Lim, K. S. Kim, G. M. Yang, K. Y. Lim, H. J. Lee, “Lateral wet oxidation of AlxGa1-xAs depending on its structures,” Appl. Phys. Lett. 69, 3357–3359 (1996).
[CrossRef]

Kim, K. S.

J. H. Kim, D. H. Lim, K. S. Kim, G. M. Yang, K. Y. Lim, H. J. Lee, “Lateral wet oxidation of AlxGa1-xAs depending on its structures,” Appl. Phys. Lett. 69, 3357–3359 (1996).
[CrossRef]

Kisker, D. W.

S. Guha, F. Agahi, B. Pezeshki, J. A. Kash, D. W. Kisker, N. A. Bojarczuk, “Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation,” Appl. Phys. Lett. 68, 906–908 (1996).
[CrossRef]

Ko, J.

A. Fiore, A. Akulova, J. Ko, E. R. Hegblom, L. A. Coldren, “Multiple-wavelength ertical-cavity laser arrays based on post-growth lateral–vertical oxidation of AlGaAs,” Appl. Phys. Lett. 73, 282–284 (1998).
[CrossRef]

Kumar, K.

D. L. Huffaker, D. G. Deppe, K. Kumar, T. J. Rogers, “Native-oxide defined ring contact for low threshold vertical-cavity lasers,” Appl. Phys. Lett. 65, 97–99 (1994).
[CrossRef]

Kurihara, T.

S. Toyoda, N. Ooba, A. Kaneko, M. Hikita, T. Kurihara, T. Maruno, “Wideband polymer thermo-optic wavelength tunable filter with fast response for WDM systems,” Electron. Lett. 36, 658–660 (2000).
[CrossRef]

Lear, K. L.

K. D. Choquette, K. L. Lear, R. P. Schneider, K. M. Geib, J. J. Figiel, R. Hull, “Wavelength insensitive performance of robust selectively oxidized vertical-cavity lasers,” IEEE Photonics Technol. Lett. 7, 1237–1239 (1995).
[CrossRef]

Lee, H. J.

J. H. Kim, D. H. Lim, K. S. Kim, G. M. Yang, K. Y. Lim, H. J. Lee, “Lateral wet oxidation of AlxGa1-xAs depending on its structures,” Appl. Phys. Lett. 69, 3357–3359 (1996).
[CrossRef]

Lim, D. H.

J. H. Kim, D. H. Lim, K. S. Kim, G. M. Yang, K. Y. Lim, H. J. Lee, “Lateral wet oxidation of AlxGa1-xAs depending on its structures,” Appl. Phys. Lett. 69, 3357–3359 (1996).
[CrossRef]

Lim, K. Y.

J. H. Kim, D. H. Lim, K. S. Kim, G. M. Yang, K. Y. Lim, H. J. Lee, “Lateral wet oxidation of AlxGa1-xAs depending on its structures,” Appl. Phys. Lett. 69, 3357–3359 (1996).
[CrossRef]

MacDougal, M. H.

M. H. MacDougal, P. D. Dapkus, “Wavelength shift of selectively oxidized AlxOy–AlGaAs–GaAs distributed Bragg reflectors,” IEEE Photon. Technol. Lett. 9, 884–886 (1997).
[CrossRef]

Maruno, T.

S. Toyoda, N. Ooba, A. Kaneko, M. Hikita, T. Kurihara, T. Maruno, “Wideband polymer thermo-optic wavelength tunable filter with fast response for WDM systems,” Electron. Lett. 36, 658–660 (2000).
[CrossRef]

Mathes, D.

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

Naone, R. L.

R. L. Naone, L. A. Coldren, “Surface energy model for the thickness dependence of the lateral oxidation of AlAs,” J. Appl. Phys. 82, 2277–2280 (1997).
[CrossRef]

Ochiai, M.

M. Ochiai, G. E. Giudice, H. Temkin, J. W. Scott, T. M. Cockerill, “Kinetics of thermal oxidation of AlAs in water vapor,” Appl. Phys. Lett. 68, 1898–1900 (1996).
[CrossRef]

Ohmer, M. C.

Ooba, N.

S. Toyoda, N. Ooba, A. Kaneko, M. Hikita, T. Kurihara, T. Maruno, “Wideband polymer thermo-optic wavelength tunable filter with fast response for WDM systems,” Electron. Lett. 36, 658–660 (2000).
[CrossRef]

Patel, R. R.

R. R. Patel, “Development of components for wavelength division multiplexing over parallel optical interconnects,” Ph.D. dissertation (University of California, Davis, Calif., 2001).

Pezeshki, B.

S. Guha, F. Agahi, B. Pezeshki, J. A. Kash, D. W. Kisker, N. A. Bojarczuk, “Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation,” Appl. Phys. Lett. 68, 906–908 (1996).
[CrossRef]

Richard, T. A.

J. M. Dallesasse, N. Holonyak, A. R. Sugg, T. A. Richard, N. El-Zein, “Hydrolyzation oxidation of AlxGa1-xAs–AlAs-GaAs quantum well heterostructures and super lattices,” Appl. Phys. Lett. 57, 2844–2846 (1990).
[CrossRef]

Rogers, T. J.

D. L. Huffaker, D. G. Deppe, K. Kumar, T. J. Rogers, “Native-oxide defined ring contact for low threshold vertical-cavity lasers,” Appl. Phys. Lett. 65, 97–99 (1994).
[CrossRef]

Schlesinger, T. E.

R. S. Burton, T. E. Schlesinger, “Wet thermal oxidation of AlxGa1-xAs compounds,” J. Appl. Phys. 76, 5503–5507 (1994).
[CrossRef]

Schneider, R. P.

R. D. Twesten, D. M. Follstaedt, K. D. Choquette, R. P. Schneider, “Microstructure of laterally oxidized AlxGa1-xAs layers in vertical-cavity lasers,” Appl. Phys. Lett. 69, 19–21 (1996).
[CrossRef]

K. D. Choquette, K. L. Lear, R. P. Schneider, K. M. Geib, J. J. Figiel, R. Hull, “Wavelength insensitive performance of robust selectively oxidized vertical-cavity lasers,” IEEE Photonics Technol. Lett. 7, 1237–1239 (1995).
[CrossRef]

Scott, J. W.

M. Ochiai, G. E. Giudice, H. Temkin, J. W. Scott, T. M. Cockerill, “Kinetics of thermal oxidation of AlAs in water vapor,” Appl. Phys. Lett. 68, 1898–1900 (1996).
[CrossRef]

Sugg, A. R.

A. R. Sugg, E. I. Chen, N. Holonyak, K. C. Hsieh, J. E. Baker, N. Finnegan, “Effects of low-temperature an-nealing on the native oxide of AlxGa1-xAs,” J. Appl. Phys. 74, 3880–3885 (1993).
[CrossRef]

J. M. Dallesasse, N. Holonyak, A. R. Sugg, T. A. Richard, N. El-Zein, “Hydrolyzation oxidation of AlxGa1-xAs–AlAs-GaAs quantum well heterostructures and super lattices,” Appl. Phys. Lett. 57, 2844–2846 (1990).
[CrossRef]

Temkin, H.

M. Ochiai, G. E. Giudice, H. Temkin, J. W. Scott, T. M. Cockerill, “Kinetics of thermal oxidation of AlAs in water vapor,” Appl. Phys. Lett. 68, 1898–1900 (1996).
[CrossRef]

Thelen, A.

A. Thelen, “Equivalent layers in multilayer filters,” J. Opt. Soc. Am. 56, 533–538 (1966).
[CrossRef]

Toyoda, S.

S. Toyoda, N. Ooba, A. Kaneko, M. Hikita, T. Kurihara, T. Maruno, “Wideband polymer thermo-optic wavelength tunable filter with fast response for WDM systems,” Electron. Lett. 36, 658–660 (2000).
[CrossRef]

Twesten, R. D.

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

R. D. Twesten, D. M. Follstaedt, K. D. Choquette, R. P. Schneider, “Microstructure of laterally oxidized AlxGa1-xAs layers in vertical-cavity lasers,” Appl. Phys. Lett. 69, 19–21 (1996).
[CrossRef]

Yang, G. M.

J. H. Kim, D. H. Lim, K. S. Kim, G. M. Yang, K. Y. Lim, H. J. Lee, “Lateral wet oxidation of AlxGa1-xAs depending on its structures,” Appl. Phys. Lett. 69, 3357–3359 (1996).
[CrossRef]

Appl. Phys. Lett. (11)

R. D. Twesten, D. M. Follstaedt, K. D. Choquette, R. P. Schneider, “Microstructure of laterally oxidized AlxGa1-xAs layers in vertical-cavity lasers,” Appl. Phys. Lett. 69, 19–21 (1996).
[CrossRef]

K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, R. Hull, “Selective oxidation of AlGaAs versus AlAs,” Appl. Phys. Lett. 69, 1385–1387 (1996).
[CrossRef]

M. Ochiai, G. E. Giudice, H. Temkin, J. W. Scott, T. M. Cockerill, “Kinetics of thermal oxidation of AlAs in water vapor,” Appl. Phys. Lett. 68, 1898–1900 (1996).
[CrossRef]

C. I. H. Ashby, M. M. Bridges, A. A. Allerman, B. E. Hammons, H. Q. Hong, “Origin of the time dependence of wet oxidation of AlGaAs,” Appl. Phys. Lett. 75, 73–75 (1999).
[CrossRef]

J. M. Dallesasse, N. Holonyak, “Native-oxide stripe-geometry AlxGa1-xAs–GaAs quantum well heterostructure lasers,” Appl. Phys. Lett. 58, 394–396 (1991).
[CrossRef]

D. L. Huffaker, D. G. Deppe, K. Kumar, T. J. Rogers, “Native-oxide defined ring contact for low threshold vertical-cavity lasers,” Appl. Phys. Lett. 65, 97–99 (1994).
[CrossRef]

J. H. Kim, D. H. Lim, K. S. Kim, G. M. Yang, K. Y. Lim, H. J. Lee, “Lateral wet oxidation of AlxGa1-xAs depending on its structures,” Appl. Phys. Lett. 69, 3357–3359 (1996).
[CrossRef]

S. Guha, F. Agahi, B. Pezeshki, J. A. Kash, D. W. Kisker, N. A. Bojarczuk, “Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation,” Appl. Phys. Lett. 68, 906–908 (1996).
[CrossRef]

A. Fiore, A. Akulova, J. Ko, E. R. Hegblom, L. A. Coldren, “Multiple-wavelength ertical-cavity laser arrays based on post-growth lateral–vertical oxidation of AlGaAs,” Appl. Phys. Lett. 73, 282–284 (1998).
[CrossRef]

O. Blum, C. I. H. Ashby, H. Q. Hou, “Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements,” Appl. Phys. Lett. 70, 2870–2872 (1997).
[CrossRef]

J. M. Dallesasse, N. Holonyak, A. R. Sugg, T. A. Richard, N. El-Zein, “Hydrolyzation oxidation of AlxGa1-xAs–AlAs-GaAs quantum well heterostructures and super lattices,” Appl. Phys. Lett. 57, 2844–2846 (1990).
[CrossRef]

C. R. Acad. Sci. (1)

A. Herpin, “Calcul du pouvoir réflecteur d’un système stratifié quelconque,” C. R. Acad. Sci. 225, 182–183 (1947).

Electron. Lett. (1)

S. Toyoda, N. Ooba, A. Kaneko, M. Hikita, T. Kurihara, T. Maruno, “Wideband polymer thermo-optic wavelength tunable filter with fast response for WDM systems,” Electron. Lett. 36, 658–660 (2000).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, E. B. Hammons, D. Mathes, R. Hull, “Advances in selective wet oxidation of AlGaAs alloys,” IEEE J. Sel. Top. Quantum Electron. 3, 916–926 (1997).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

M. H. MacDougal, P. D. Dapkus, “Wavelength shift of selectively oxidized AlxOy–AlGaAs–GaAs distributed Bragg reflectors,” IEEE Photon. Technol. Lett. 9, 884–886 (1997).
[CrossRef]

IEEE Photonics Technol. Lett. (1)

K. D. Choquette, K. L. Lear, R. P. Schneider, K. M. Geib, J. J. Figiel, R. Hull, “Wavelength insensitive performance of robust selectively oxidized vertical-cavity lasers,” IEEE Photonics Technol. Lett. 7, 1237–1239 (1995).
[CrossRef]

J. Appl. Phys. (5)

R. S. Burton, T. E. Schlesinger, “Wet thermal oxidation of AlxGa1-xAs compounds,” J. Appl. Phys. 76, 5503–5507 (1994).
[CrossRef]

A. R. Sugg, E. I. Chen, N. Holonyak, K. C. Hsieh, J. E. Baker, N. Finnegan, “Effects of low-temperature an-nealing on the native oxide of AlxGa1-xAs,” J. Appl. Phys. 74, 3880–3885 (1993).
[CrossRef]

R. L. Naone, L. A. Coldren, “Surface energy model for the thickness dependence of the lateral oxidation of AlAs,” J. Appl. Phys. 82, 2277–2280 (1997).
[CrossRef]

R. J. Deri, M. A. Emanuel, “Consistent formula for the refractive index of AlxGa1-xAs below the band edge,” J. Appl. Phys. 77, 4667–4672 (1995).
[CrossRef]

B. E. Deal, A. S. Grove, “General relationship for the thermal oxidation of silicon,” J. Appl. Phys. 36, 3770–3778 (1965).
[CrossRef]

J. Opt. Soc. Am. (3)

J. Phys. Chem. (1)

R. H. Doremus, “Exchange and diffusion of ions in glass,” J. Phys. Chem. 68, 2212–2218 (1964).
[CrossRef]

Other (3)

R. J. Deri, TeraWave Communications, Inc., 30680 Huntwood Avenue, Hayward, Calif. 94544 (personal communication, 1999).

R. R. Patel, “Development of components for wavelength division multiplexing over parallel optical interconnects,” Ph.D. dissertation (University of California, Davis, Calif., 2001).

R. W. Boyd, Nonlinear Optics (Academic, San Diego, Calif., 1992).

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