Abstract

We analyze theoretically the feasibility of what we believe to be a novel two-dimensional SiGe/Si strained-layer waveguide. The new geometry can be grown by selective epitaxy and has loosened cutoff and critical-thickness restrictions. This geometry could be applied for waveguide-active devices such as LED’s, photodetectors, and modulators. Owing to the high cross section of the guided mode, these devices could be easily interfaced in practice with optical fibers.

© 1999 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. R. D. Lareau, L. Friedman, R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26, 1653–1655 (1990).
    [CrossRef]
  2. B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
    [CrossRef]
  3. R. A. Soref, F. Namavar, J. P. Lorenzo, “Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon,” Opt. Lett. 15, 270–272 (1990).
    [CrossRef] [PubMed]
  4. S. F. Pesarcik, G. V. Treyz, S. S. Iyer, J. M. Halbout, “SiGe optical waveguides with 0.5 db/cm losses for single mode fibre optic systems,” Electron. Lett. 28, 159–160 (1990).
    [CrossRef]
  5. A. Splett, J. Schmidtchen, B. Schüppert, K. Petermann, “Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon,” Electron. Lett. 26, 1035–1036 (1990).
    [CrossRef]
  6. Y. M. Liu, P. R. Prucnal, “Deeply etched singlemode SiGe RIB waveguides for Si based optoelectronic integration,” Electron. Lett. 28, 1434–1435 (1992).
    [CrossRef]
  7. J. Schmidtchen, B. Schüppert, K. Petermann, “Passive integrated optical waveguide structures by Ge diffusion in Si,” J. Lightwave Technol. 12, 842–848 (1994).
    [CrossRef]
  8. E. Lea, B. L. Weiss, “Characteristics of photoelastic waveguides in SiGe/Si heterostructures,” Electron. Lett. 33, 292–293 (1997).
    [CrossRef]
  9. Z. Yang, B. L. Weiss, G. Shao, F. Namavar, “Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides,” J. Appl. Phys. 77, 2254–2257 (1995).
    [CrossRef]
  10. F. Namavar, R. A. Soref, “Optical waveguiding in Si/SiGe/Si heterostructures,” J. Appl. Phys. 70, 3370–3372 (1991).
    [CrossRef]
  11. M. S. Ünlü, K. Kishino, H. J. Liaw, H. Markoç, “A theoretical study of resonant cavity-enhanced photodetectors with Ge and Si active regions,” J. Appl. Phys. 71, 4049–4057 (1992).
    [CrossRef]
  12. A. Vonsovici, L. Vescan, R. Apetz, A. Koster, K. Schmidt, “Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy,” IEEE Trans. Electron Devices 45, 538–542 (1998).
    [CrossRef]
  13. A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
    [CrossRef]
  14. A. Splett, “Integriert-optische Wellenleiter-Photodtektoren-Kombinationen in Silizium-Germanium-Legierungen,” Ph.D dissertation (Technische Universität, Berlin, D83, 1994).
  15. T. Stoica, L. Vescan, M. Goryll, “Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation,” J. Appl. Phys. 83, 3367–3373 (1998).
    [CrossRef]
  16. R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Electroluminescence from strained Si/SiGe/Si heterostructure diodes,” in Proceedings of the 24th European Solid State Device Research Conference (Edinburgh, Scotland, September 11–15, 1994), p. 653.
  17. R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Pho-toluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett. 66, 445–447 (1995).
    [CrossRef]
  18. R. A. Soref, J. Schmidtchen, K. Petermann, “Large single mode RIB waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27, 1971–1974 (1991).
    [CrossRef]
  19. K. Petermann, “Properties of optical RIB waveguides with large cross section,” Archiv Electronik Ubertragungstechnik AEU-30, 139–140 (1976).
  20. S. P. Pogossian, L. Vescan, A. Vonsovici, “The single mode condition for semiconductor rib waveguides with large cross-section,” J. Lightwave Technol. 16, 1851–1853 (1998).
    [CrossRef]
  21. C. G. Van de Walle, R. M. Martin, “Theoretical calculations of heterojunction discontinuities in the Si/Ge system,” Phys. Rev. B 34, 5621–5634 (1986).
    [CrossRef]
  22. H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, “Ge0.6Si0.4 rib waveguide avalanche photodetector for 1.3 µm operation,” Appl. Phys. Lett. 49, 809–811 (1986).
    [CrossRef]
  23. H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi, “GexSi1-x strained layer superlattice waveguide photodetectors operating near 1.3 µm,” Appl. Phys. Lett. 48, 963–965 (1986).
    [CrossRef]
  24. L. Vescan, “Selective epitaxial growth of SiGe alloys—influence of growth parameters on film properties,” Mater. Sci. Eng., B 28, 1–8 (1994).
    [CrossRef]
  25. L. Vescan, T. Stoica, M. Goryll, K. Grimm, “Selective epitaxial growth of strained SiGe/Si for optoelectronic devices,” Mater. Sci. Eng., B 51, 166–169 (1998).
    [CrossRef]
  26. J. W. Matthews, A. E. Blakeslee, “Defects in epitaxial multilayers I. Misfit dislocations,” J. Cryst. Growth 27, 118–125 (1974).
  27. T. Stoica, L. Vescan, “Misfit dislocations in finite lateral size Si1-xGex films grown by selective epitaxy,” J. Cryst. Growth 131, 32–40 (1993).
    [CrossRef]
  28. R. M. Knox, P. P. Tulios, “Integrated circuits for millimeter through optical frequency range,” in Proceedings of the Magnetic Resonance Imaging Symposium on Submillimeter Waves, Y. Fox, ed. (Polytechnic Press, Brooklyn, N.Y., 1970), pp. 497–516.
  29. S. P. Pogossian, H. Le Gall, J. Gieraltowski, J. Loaëc, “Determination of the parameters of rectangular waveguides by new effective index methods,” J. Mod. Opt. 42, 403–409 (1995).
    [CrossRef]
  30. P. N. Robson, P. C. Kendall, Rib Waveguide Theory by the Spectral Index Method (Research Studies Press, ltd., Taunton, Somerset, UK, 1990).
  31. A. Vonsovici, “Structures à guides d’ondes optique Si sur isolant (SIMOX) et Si1-xGex/Si pour la modulation optique à λ = 1,3 µm,” Ph.D. thesis (Université Paris Sud, Orsay, France, 1996).
  32. W. Chen, R. Westhoff, R. Reif, “Determination of optical constants of strained Si1-xGex epitaxial layers in the spectral range 0.75–2.75 ev,” Appl. Phys. Lett. 71, 1525–1527 (1997).
    [CrossRef]
  33. J. C. G. de Sande, A. Rodriguez, T. Rodriguez, “Spectroscopic ellipsometry determination of the refractive index of strained Si1-xGex layers in the near infrared wave-length range (0.9–1.7),” Appl. Phys. Lett. 67, 3402–3404 (1995).
    [CrossRef]

1998 (4)

A. Vonsovici, L. Vescan, R. Apetz, A. Koster, K. Schmidt, “Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy,” IEEE Trans. Electron Devices 45, 538–542 (1998).
[CrossRef]

T. Stoica, L. Vescan, M. Goryll, “Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation,” J. Appl. Phys. 83, 3367–3373 (1998).
[CrossRef]

L. Vescan, T. Stoica, M. Goryll, K. Grimm, “Selective epitaxial growth of strained SiGe/Si for optoelectronic devices,” Mater. Sci. Eng., B 51, 166–169 (1998).
[CrossRef]

S. P. Pogossian, L. Vescan, A. Vonsovici, “The single mode condition for semiconductor rib waveguides with large cross-section,” J. Lightwave Technol. 16, 1851–1853 (1998).
[CrossRef]

1997 (2)

W. Chen, R. Westhoff, R. Reif, “Determination of optical constants of strained Si1-xGex epitaxial layers in the spectral range 0.75–2.75 ev,” Appl. Phys. Lett. 71, 1525–1527 (1997).
[CrossRef]

E. Lea, B. L. Weiss, “Characteristics of photoelastic waveguides in SiGe/Si heterostructures,” Electron. Lett. 33, 292–293 (1997).
[CrossRef]

1996 (1)

B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
[CrossRef]

1995 (4)

J. C. G. de Sande, A. Rodriguez, T. Rodriguez, “Spectroscopic ellipsometry determination of the refractive index of strained Si1-xGex layers in the near infrared wave-length range (0.9–1.7),” Appl. Phys. Lett. 67, 3402–3404 (1995).
[CrossRef]

S. P. Pogossian, H. Le Gall, J. Gieraltowski, J. Loaëc, “Determination of the parameters of rectangular waveguides by new effective index methods,” J. Mod. Opt. 42, 403–409 (1995).
[CrossRef]

Z. Yang, B. L. Weiss, G. Shao, F. Namavar, “Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides,” J. Appl. Phys. 77, 2254–2257 (1995).
[CrossRef]

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Pho-toluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett. 66, 445–447 (1995).
[CrossRef]

1994 (3)

L. Vescan, “Selective epitaxial growth of SiGe alloys—influence of growth parameters on film properties,” Mater. Sci. Eng., B 28, 1–8 (1994).
[CrossRef]

A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
[CrossRef]

J. Schmidtchen, B. Schüppert, K. Petermann, “Passive integrated optical waveguide structures by Ge diffusion in Si,” J. Lightwave Technol. 12, 842–848 (1994).
[CrossRef]

1993 (1)

T. Stoica, L. Vescan, “Misfit dislocations in finite lateral size Si1-xGex films grown by selective epitaxy,” J. Cryst. Growth 131, 32–40 (1993).
[CrossRef]

1992 (2)

Y. M. Liu, P. R. Prucnal, “Deeply etched singlemode SiGe RIB waveguides for Si based optoelectronic integration,” Electron. Lett. 28, 1434–1435 (1992).
[CrossRef]

M. S. Ünlü, K. Kishino, H. J. Liaw, H. Markoç, “A theoretical study of resonant cavity-enhanced photodetectors with Ge and Si active regions,” J. Appl. Phys. 71, 4049–4057 (1992).
[CrossRef]

1991 (2)

R. A. Soref, J. Schmidtchen, K. Petermann, “Large single mode RIB waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27, 1971–1974 (1991).
[CrossRef]

F. Namavar, R. A. Soref, “Optical waveguiding in Si/SiGe/Si heterostructures,” J. Appl. Phys. 70, 3370–3372 (1991).
[CrossRef]

1990 (4)

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, J. M. Halbout, “SiGe optical waveguides with 0.5 db/cm losses for single mode fibre optic systems,” Electron. Lett. 28, 159–160 (1990).
[CrossRef]

A. Splett, J. Schmidtchen, B. Schüppert, K. Petermann, “Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon,” Electron. Lett. 26, 1035–1036 (1990).
[CrossRef]

R. D. Lareau, L. Friedman, R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26, 1653–1655 (1990).
[CrossRef]

R. A. Soref, F. Namavar, J. P. Lorenzo, “Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon,” Opt. Lett. 15, 270–272 (1990).
[CrossRef] [PubMed]

1986 (3)

C. G. Van de Walle, R. M. Martin, “Theoretical calculations of heterojunction discontinuities in the Si/Ge system,” Phys. Rev. B 34, 5621–5634 (1986).
[CrossRef]

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, “Ge0.6Si0.4 rib waveguide avalanche photodetector for 1.3 µm operation,” Appl. Phys. Lett. 49, 809–811 (1986).
[CrossRef]

H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi, “GexSi1-x strained layer superlattice waveguide photodetectors operating near 1.3 µm,” Appl. Phys. Lett. 48, 963–965 (1986).
[CrossRef]

1976 (1)

K. Petermann, “Properties of optical RIB waveguides with large cross section,” Archiv Electronik Ubertragungstechnik AEU-30, 139–140 (1976).

1974 (1)

J. W. Matthews, A. E. Blakeslee, “Defects in epitaxial multilayers I. Misfit dislocations,” J. Cryst. Growth 27, 118–125 (1974).

Antreasyan, A.

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, “Ge0.6Si0.4 rib waveguide avalanche photodetector for 1.3 µm operation,” Appl. Phys. Lett. 49, 809–811 (1986).
[CrossRef]

Apetz, R.

A. Vonsovici, L. Vescan, R. Apetz, A. Koster, K. Schmidt, “Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy,” IEEE Trans. Electron Devices 45, 538–542 (1998).
[CrossRef]

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Pho-toluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett. 66, 445–447 (1995).
[CrossRef]

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Electroluminescence from strained Si/SiGe/Si heterostructure diodes,” in Proceedings of the 24th European Solid State Device Research Conference (Edinburgh, Scotland, September 11–15, 1994), p. 653.

Bean, J. C.

H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi, “GexSi1-x strained layer superlattice waveguide photodetectors operating near 1.3 µm,” Appl. Phys. Lett. 48, 963–965 (1986).
[CrossRef]

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, “Ge0.6Si0.4 rib waveguide avalanche photodetector for 1.3 µm operation,” Appl. Phys. Lett. 49, 809–811 (1986).
[CrossRef]

Blakeslee, A. E.

J. W. Matthews, A. E. Blakeslee, “Defects in epitaxial multilayers I. Misfit dislocations,” J. Cryst. Growth 27, 118–125 (1974).

Carius, R.

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Pho-toluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett. 66, 445–447 (1995).
[CrossRef]

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Electroluminescence from strained Si/SiGe/Si heterostructure diodes,” in Proceedings of the 24th European Solid State Device Research Conference (Edinburgh, Scotland, September 11–15, 1994), p. 653.

Chen, W.

W. Chen, R. Westhoff, R. Reif, “Determination of optical constants of strained Si1-xGex epitaxial layers in the spectral range 0.75–2.75 ev,” Appl. Phys. Lett. 71, 1525–1527 (1997).
[CrossRef]

de Sande, J. C. G.

J. C. G. de Sande, A. Rodriguez, T. Rodriguez, “Spectroscopic ellipsometry determination of the refractive index of strained Si1-xGex layers in the near infrared wave-length range (0.9–1.7),” Appl. Phys. Lett. 67, 3402–3404 (1995).
[CrossRef]

Fischer, U.

B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
[CrossRef]

Friedman, L.

R. D. Lareau, L. Friedman, R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26, 1653–1655 (1990).
[CrossRef]

Gieraltowski, J.

S. P. Pogossian, H. Le Gall, J. Gieraltowski, J. Loaëc, “Determination of the parameters of rectangular waveguides by new effective index methods,” J. Mod. Opt. 42, 403–409 (1995).
[CrossRef]

Goryll, M.

L. Vescan, T. Stoica, M. Goryll, K. Grimm, “Selective epitaxial growth of strained SiGe/Si for optoelectronic devices,” Mater. Sci. Eng., B 51, 166–169 (1998).
[CrossRef]

T. Stoica, L. Vescan, M. Goryll, “Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation,” J. Appl. Phys. 83, 3367–3373 (1998).
[CrossRef]

Grimm, K.

L. Vescan, T. Stoica, M. Goryll, K. Grimm, “Selective epitaxial growth of strained SiGe/Si for optoelectronic devices,” Mater. Sci. Eng., B 51, 166–169 (1998).
[CrossRef]

Halbout, J. M.

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, J. M. Halbout, “SiGe optical waveguides with 0.5 db/cm losses for single mode fibre optic systems,” Electron. Lett. 28, 159–160 (1990).
[CrossRef]

Herzog, H. J.

A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
[CrossRef]

Iyer, S. S.

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, J. M. Halbout, “SiGe optical waveguides with 0.5 db/cm losses for single mode fibre optic systems,” Electron. Lett. 28, 159–160 (1990).
[CrossRef]

Kasper, E.

A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
[CrossRef]

Kendall, P. C.

P. N. Robson, P. C. Kendall, Rib Waveguide Theory by the Spectral Index Method (Research Studies Press, ltd., Taunton, Somerset, UK, 1990).

Kibbel, H.

A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
[CrossRef]

Kishino, K.

M. S. Ünlü, K. Kishino, H. J. Liaw, H. Markoç, “A theoretical study of resonant cavity-enhanced photodetectors with Ge and Si active regions,” J. Appl. Phys. 71, 4049–4057 (1992).
[CrossRef]

Knox, R. M.

R. M. Knox, P. P. Tulios, “Integrated circuits for millimeter through optical frequency range,” in Proceedings of the Magnetic Resonance Imaging Symposium on Submillimeter Waves, Y. Fox, ed. (Polytechnic Press, Brooklyn, N.Y., 1970), pp. 497–516.

Koster, A.

A. Vonsovici, L. Vescan, R. Apetz, A. Koster, K. Schmidt, “Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy,” IEEE Trans. Electron Devices 45, 538–542 (1998).
[CrossRef]

Lareau, R. D.

R. D. Lareau, L. Friedman, R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26, 1653–1655 (1990).
[CrossRef]

Le Gall, H.

S. P. Pogossian, H. Le Gall, J. Gieraltowski, J. Loaëc, “Determination of the parameters of rectangular waveguides by new effective index methods,” J. Mod. Opt. 42, 403–409 (1995).
[CrossRef]

Lea, E.

E. Lea, B. L. Weiss, “Characteristics of photoelastic waveguides in SiGe/Si heterostructures,” Electron. Lett. 33, 292–293 (1997).
[CrossRef]

Liaw, H. J.

M. S. Ünlü, K. Kishino, H. J. Liaw, H. Markoç, “A theoretical study of resonant cavity-enhanced photodetectors with Ge and Si active regions,” J. Appl. Phys. 71, 4049–4057 (1992).
[CrossRef]

Liu, Y. M.

Y. M. Liu, P. R. Prucnal, “Deeply etched singlemode SiGe RIB waveguides for Si based optoelectronic integration,” Electron. Lett. 28, 1434–1435 (1992).
[CrossRef]

Loaëc, J.

S. P. Pogossian, H. Le Gall, J. Gieraltowski, J. Loaëc, “Determination of the parameters of rectangular waveguides by new effective index methods,” J. Mod. Opt. 42, 403–409 (1995).
[CrossRef]

Logan, R. A.

H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi, “GexSi1-x strained layer superlattice waveguide photodetectors operating near 1.3 µm,” Appl. Phys. Lett. 48, 963–965 (1986).
[CrossRef]

Loo, R.

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Pho-toluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett. 66, 445–447 (1995).
[CrossRef]

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Electroluminescence from strained Si/SiGe/Si heterostructure diodes,” in Proceedings of the 24th European Solid State Device Research Conference (Edinburgh, Scotland, September 11–15, 1994), p. 653.

Lorenzo, J. P.

Luryi, S.

H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi, “GexSi1-x strained layer superlattice waveguide photodetectors operating near 1.3 µm,” Appl. Phys. Lett. 48, 963–965 (1986).
[CrossRef]

Lüth, H.

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Pho-toluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett. 66, 445–447 (1995).
[CrossRef]

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Electroluminescence from strained Si/SiGe/Si heterostructure diodes,” in Proceedings of the 24th European Solid State Device Research Conference (Edinburgh, Scotland, September 11–15, 1994), p. 653.

Markoç, H.

M. S. Ünlü, K. Kishino, H. J. Liaw, H. Markoç, “A theoretical study of resonant cavity-enhanced photodetectors with Ge and Si active regions,” J. Appl. Phys. 71, 4049–4057 (1992).
[CrossRef]

Martin, R. M.

C. G. Van de Walle, R. M. Martin, “Theoretical calculations of heterojunction discontinuities in the Si/Ge system,” Phys. Rev. B 34, 5621–5634 (1986).
[CrossRef]

Matthews, J. W.

J. W. Matthews, A. E. Blakeslee, “Defects in epitaxial multilayers I. Misfit dislocations,” J. Cryst. Growth 27, 118–125 (1974).

Moosburger, R.

B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
[CrossRef]

Namavar, F.

Z. Yang, B. L. Weiss, G. Shao, F. Namavar, “Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides,” J. Appl. Phys. 77, 2254–2257 (1995).
[CrossRef]

F. Namavar, R. A. Soref, “Optical waveguiding in Si/SiGe/Si heterostructures,” J. Appl. Phys. 70, 3370–3372 (1991).
[CrossRef]

R. A. Soref, F. Namavar, J. P. Lorenzo, “Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon,” Opt. Lett. 15, 270–272 (1990).
[CrossRef] [PubMed]

Olsson, N. A.

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, “Ge0.6Si0.4 rib waveguide avalanche photodetector for 1.3 µm operation,” Appl. Phys. Lett. 49, 809–811 (1986).
[CrossRef]

Pearsall, T. P.

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, “Ge0.6Si0.4 rib waveguide avalanche photodetector for 1.3 µm operation,” Appl. Phys. Lett. 49, 809–811 (1986).
[CrossRef]

H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi, “GexSi1-x strained layer superlattice waveguide photodetectors operating near 1.3 µm,” Appl. Phys. Lett. 48, 963–965 (1986).
[CrossRef]

Pesarcik, S. F.

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, J. M. Halbout, “SiGe optical waveguides with 0.5 db/cm losses for single mode fibre optic systems,” Electron. Lett. 28, 159–160 (1990).
[CrossRef]

Petermann, K.

B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
[CrossRef]

A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
[CrossRef]

J. Schmidtchen, B. Schüppert, K. Petermann, “Passive integrated optical waveguide structures by Ge diffusion in Si,” J. Lightwave Technol. 12, 842–848 (1994).
[CrossRef]

R. A. Soref, J. Schmidtchen, K. Petermann, “Large single mode RIB waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27, 1971–1974 (1991).
[CrossRef]

A. Splett, J. Schmidtchen, B. Schüppert, K. Petermann, “Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon,” Electron. Lett. 26, 1035–1036 (1990).
[CrossRef]

K. Petermann, “Properties of optical RIB waveguides with large cross section,” Archiv Electronik Ubertragungstechnik AEU-30, 139–140 (1976).

Pogossian, S. P.

S. P. Pogossian, L. Vescan, A. Vonsovici, “The single mode condition for semiconductor rib waveguides with large cross-section,” J. Lightwave Technol. 16, 1851–1853 (1998).
[CrossRef]

S. P. Pogossian, H. Le Gall, J. Gieraltowski, J. Loaëc, “Determination of the parameters of rectangular waveguides by new effective index methods,” J. Mod. Opt. 42, 403–409 (1995).
[CrossRef]

Presting, H.

A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
[CrossRef]

Prucnal, P. R.

Y. M. Liu, P. R. Prucnal, “Deeply etched singlemode SiGe RIB waveguides for Si based optoelectronic integration,” Electron. Lett. 28, 1434–1435 (1992).
[CrossRef]

Reif, R.

W. Chen, R. Westhoff, R. Reif, “Determination of optical constants of strained Si1-xGex epitaxial layers in the spectral range 0.75–2.75 ev,” Appl. Phys. Lett. 71, 1525–1527 (1997).
[CrossRef]

Robson, P. N.

P. N. Robson, P. C. Kendall, Rib Waveguide Theory by the Spectral Index Method (Research Studies Press, ltd., Taunton, Somerset, UK, 1990).

Rodriguez, A.

J. C. G. de Sande, A. Rodriguez, T. Rodriguez, “Spectroscopic ellipsometry determination of the refractive index of strained Si1-xGex layers in the near infrared wave-length range (0.9–1.7),” Appl. Phys. Lett. 67, 3402–3404 (1995).
[CrossRef]

Rodriguez, T.

J. C. G. de Sande, A. Rodriguez, T. Rodriguez, “Spectroscopic ellipsometry determination of the refractive index of strained Si1-xGex layers in the near infrared wave-length range (0.9–1.7),” Appl. Phys. Lett. 67, 3402–3404 (1995).
[CrossRef]

Schmidt, K.

A. Vonsovici, L. Vescan, R. Apetz, A. Koster, K. Schmidt, “Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy,” IEEE Trans. Electron Devices 45, 538–542 (1998).
[CrossRef]

Schmidtchen, J.

B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
[CrossRef]

J. Schmidtchen, B. Schüppert, K. Petermann, “Passive integrated optical waveguide structures by Ge diffusion in Si,” J. Lightwave Technol. 12, 842–848 (1994).
[CrossRef]

R. A. Soref, J. Schmidtchen, K. Petermann, “Large single mode RIB waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27, 1971–1974 (1991).
[CrossRef]

A. Splett, J. Schmidtchen, B. Schüppert, K. Petermann, “Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon,” Electron. Lett. 26, 1035–1036 (1990).
[CrossRef]

Schüppert, B.

B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
[CrossRef]

J. Schmidtchen, B. Schüppert, K. Petermann, “Passive integrated optical waveguide structures by Ge diffusion in Si,” J. Lightwave Technol. 12, 842–848 (1994).
[CrossRef]

A. Splett, J. Schmidtchen, B. Schüppert, K. Petermann, “Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon,” Electron. Lett. 26, 1035–1036 (1990).
[CrossRef]

Shao, G.

Z. Yang, B. L. Weiss, G. Shao, F. Namavar, “Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides,” J. Appl. Phys. 77, 2254–2257 (1995).
[CrossRef]

Soref, R. A.

F. Namavar, R. A. Soref, “Optical waveguiding in Si/SiGe/Si heterostructures,” J. Appl. Phys. 70, 3370–3372 (1991).
[CrossRef]

R. A. Soref, J. Schmidtchen, K. Petermann, “Large single mode RIB waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27, 1971–1974 (1991).
[CrossRef]

R. D. Lareau, L. Friedman, R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26, 1653–1655 (1990).
[CrossRef]

R. A. Soref, F. Namavar, J. P. Lorenzo, “Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon,” Opt. Lett. 15, 270–272 (1990).
[CrossRef] [PubMed]

Splett, A.

B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
[CrossRef]

A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
[CrossRef]

A. Splett, J. Schmidtchen, B. Schüppert, K. Petermann, “Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon,” Electron. Lett. 26, 1035–1036 (1990).
[CrossRef]

A. Splett, “Integriert-optische Wellenleiter-Photodtektoren-Kombinationen in Silizium-Germanium-Legierungen,” Ph.D dissertation (Technische Universität, Berlin, D83, 1994).

Stoica, T.

T. Stoica, L. Vescan, M. Goryll, “Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation,” J. Appl. Phys. 83, 3367–3373 (1998).
[CrossRef]

L. Vescan, T. Stoica, M. Goryll, K. Grimm, “Selective epitaxial growth of strained SiGe/Si for optoelectronic devices,” Mater. Sci. Eng., B 51, 166–169 (1998).
[CrossRef]

T. Stoica, L. Vescan, “Misfit dislocations in finite lateral size Si1-xGex films grown by selective epitaxy,” J. Cryst. Growth 131, 32–40 (1993).
[CrossRef]

Temkin, H.

H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi, “GexSi1-x strained layer superlattice waveguide photodetectors operating near 1.3 µm,” Appl. Phys. Lett. 48, 963–965 (1986).
[CrossRef]

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, “Ge0.6Si0.4 rib waveguide avalanche photodetector for 1.3 µm operation,” Appl. Phys. Lett. 49, 809–811 (1986).
[CrossRef]

Treyz, G. V.

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, J. M. Halbout, “SiGe optical waveguides with 0.5 db/cm losses for single mode fibre optic systems,” Electron. Lett. 28, 159–160 (1990).
[CrossRef]

Tulios, P. P.

R. M. Knox, P. P. Tulios, “Integrated circuits for millimeter through optical frequency range,” in Proceedings of the Magnetic Resonance Imaging Symposium on Submillimeter Waves, Y. Fox, ed. (Polytechnic Press, Brooklyn, N.Y., 1970), pp. 497–516.

Ünlü, M. S.

M. S. Ünlü, K. Kishino, H. J. Liaw, H. Markoç, “A theoretical study of resonant cavity-enhanced photodetectors with Ge and Si active regions,” J. Appl. Phys. 71, 4049–4057 (1992).
[CrossRef]

Van de Walle, C. G.

C. G. Van de Walle, R. M. Martin, “Theoretical calculations of heterojunction discontinuities in the Si/Ge system,” Phys. Rev. B 34, 5621–5634 (1986).
[CrossRef]

Vescan, L.

A. Vonsovici, L. Vescan, R. Apetz, A. Koster, K. Schmidt, “Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy,” IEEE Trans. Electron Devices 45, 538–542 (1998).
[CrossRef]

S. P. Pogossian, L. Vescan, A. Vonsovici, “The single mode condition for semiconductor rib waveguides with large cross-section,” J. Lightwave Technol. 16, 1851–1853 (1998).
[CrossRef]

L. Vescan, T. Stoica, M. Goryll, K. Grimm, “Selective epitaxial growth of strained SiGe/Si for optoelectronic devices,” Mater. Sci. Eng., B 51, 166–169 (1998).
[CrossRef]

T. Stoica, L. Vescan, M. Goryll, “Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation,” J. Appl. Phys. 83, 3367–3373 (1998).
[CrossRef]

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Pho-toluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett. 66, 445–447 (1995).
[CrossRef]

L. Vescan, “Selective epitaxial growth of SiGe alloys—influence of growth parameters on film properties,” Mater. Sci. Eng., B 28, 1–8 (1994).
[CrossRef]

T. Stoica, L. Vescan, “Misfit dislocations in finite lateral size Si1-xGex films grown by selective epitaxy,” J. Cryst. Growth 131, 32–40 (1993).
[CrossRef]

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Electroluminescence from strained Si/SiGe/Si heterostructure diodes,” in Proceedings of the 24th European Solid State Device Research Conference (Edinburgh, Scotland, September 11–15, 1994), p. 653.

Vonsovici, A.

S. P. Pogossian, L. Vescan, A. Vonsovici, “The single mode condition for semiconductor rib waveguides with large cross-section,” J. Lightwave Technol. 16, 1851–1853 (1998).
[CrossRef]

A. Vonsovici, L. Vescan, R. Apetz, A. Koster, K. Schmidt, “Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy,” IEEE Trans. Electron Devices 45, 538–542 (1998).
[CrossRef]

A. Vonsovici, “Structures à guides d’ondes optique Si sur isolant (SIMOX) et Si1-xGex/Si pour la modulation optique à λ = 1,3 µm,” Ph.D. thesis (Université Paris Sud, Orsay, France, 1996).

Weiss, B. L.

E. Lea, B. L. Weiss, “Characteristics of photoelastic waveguides in SiGe/Si heterostructures,” Electron. Lett. 33, 292–293 (1997).
[CrossRef]

Z. Yang, B. L. Weiss, G. Shao, F. Namavar, “Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides,” J. Appl. Phys. 77, 2254–2257 (1995).
[CrossRef]

Westhoff, R.

W. Chen, R. Westhoff, R. Reif, “Determination of optical constants of strained Si1-xGex epitaxial layers in the spectral range 0.75–2.75 ev,” Appl. Phys. Lett. 71, 1525–1527 (1997).
[CrossRef]

Yang, Z.

Z. Yang, B. L. Weiss, G. Shao, F. Namavar, “Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides,” J. Appl. Phys. 77, 2254–2257 (1995).
[CrossRef]

Zinke, T.

B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
[CrossRef]

A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
[CrossRef]

Appl. Phys. Lett. (5)

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Pho-toluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett. 66, 445–447 (1995).
[CrossRef]

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, “Ge0.6Si0.4 rib waveguide avalanche photodetector for 1.3 µm operation,” Appl. Phys. Lett. 49, 809–811 (1986).
[CrossRef]

H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi, “GexSi1-x strained layer superlattice waveguide photodetectors operating near 1.3 µm,” Appl. Phys. Lett. 48, 963–965 (1986).
[CrossRef]

W. Chen, R. Westhoff, R. Reif, “Determination of optical constants of strained Si1-xGex epitaxial layers in the spectral range 0.75–2.75 ev,” Appl. Phys. Lett. 71, 1525–1527 (1997).
[CrossRef]

J. C. G. de Sande, A. Rodriguez, T. Rodriguez, “Spectroscopic ellipsometry determination of the refractive index of strained Si1-xGex layers in the near infrared wave-length range (0.9–1.7),” Appl. Phys. Lett. 67, 3402–3404 (1995).
[CrossRef]

Archiv Electronik Ubertragungstechnik (1)

K. Petermann, “Properties of optical RIB waveguides with large cross section,” Archiv Electronik Ubertragungstechnik AEU-30, 139–140 (1976).

Electron. Lett. (5)

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, J. M. Halbout, “SiGe optical waveguides with 0.5 db/cm losses for single mode fibre optic systems,” Electron. Lett. 28, 159–160 (1990).
[CrossRef]

A. Splett, J. Schmidtchen, B. Schüppert, K. Petermann, “Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon,” Electron. Lett. 26, 1035–1036 (1990).
[CrossRef]

Y. M. Liu, P. R. Prucnal, “Deeply etched singlemode SiGe RIB waveguides for Si based optoelectronic integration,” Electron. Lett. 28, 1434–1435 (1992).
[CrossRef]

E. Lea, B. L. Weiss, “Characteristics of photoelastic waveguides in SiGe/Si heterostructures,” Electron. Lett. 33, 292–293 (1997).
[CrossRef]

R. D. Lareau, L. Friedman, R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26, 1653–1655 (1990).
[CrossRef]

IEEE J. Quantum Electron. (1)

R. A. Soref, J. Schmidtchen, K. Petermann, “Large single mode RIB waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27, 1971–1974 (1991).
[CrossRef]

IEEE Photonics Technol. Lett. (1)

A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, H. Presting, “Integration of waveguide and photodetectors in SiGe for 1.3 µm operation,” IEEE Photonics Technol. Lett. 6, 59–61 (1994).
[CrossRef]

IEEE Trans. Electron Devices (1)

A. Vonsovici, L. Vescan, R. Apetz, A. Koster, K. Schmidt, “Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy,” IEEE Trans. Electron Devices 45, 538–542 (1998).
[CrossRef]

J. Appl. Phys. (4)

T. Stoica, L. Vescan, M. Goryll, “Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation,” J. Appl. Phys. 83, 3367–3373 (1998).
[CrossRef]

Z. Yang, B. L. Weiss, G. Shao, F. Namavar, “Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides,” J. Appl. Phys. 77, 2254–2257 (1995).
[CrossRef]

F. Namavar, R. A. Soref, “Optical waveguiding in Si/SiGe/Si heterostructures,” J. Appl. Phys. 70, 3370–3372 (1991).
[CrossRef]

M. S. Ünlü, K. Kishino, H. J. Liaw, H. Markoç, “A theoretical study of resonant cavity-enhanced photodetectors with Ge and Si active regions,” J. Appl. Phys. 71, 4049–4057 (1992).
[CrossRef]

J. Cryst. Growth (2)

J. W. Matthews, A. E. Blakeslee, “Defects in epitaxial multilayers I. Misfit dislocations,” J. Cryst. Growth 27, 118–125 (1974).

T. Stoica, L. Vescan, “Misfit dislocations in finite lateral size Si1-xGex films grown by selective epitaxy,” J. Cryst. Growth 131, 32–40 (1993).
[CrossRef]

J. Lightwave Technol. (3)

S. P. Pogossian, L. Vescan, A. Vonsovici, “The single mode condition for semiconductor rib waveguides with large cross-section,” J. Lightwave Technol. 16, 1851–1853 (1998).
[CrossRef]

B. Schüppert, J. Schmidtchen, A. Splett, U. Fischer, T. Zinke, R. Moosburger, K. Petermann, “Integrated optics in silicon and SiGe heterostructures,” J. Lightwave Technol. 14, 2311–2323 (1996).
[CrossRef]

J. Schmidtchen, B. Schüppert, K. Petermann, “Passive integrated optical waveguide structures by Ge diffusion in Si,” J. Lightwave Technol. 12, 842–848 (1994).
[CrossRef]

J. Mod. Opt. (1)

S. P. Pogossian, H. Le Gall, J. Gieraltowski, J. Loaëc, “Determination of the parameters of rectangular waveguides by new effective index methods,” J. Mod. Opt. 42, 403–409 (1995).
[CrossRef]

Mater. Sci. Eng., B (2)

L. Vescan, “Selective epitaxial growth of SiGe alloys—influence of growth parameters on film properties,” Mater. Sci. Eng., B 28, 1–8 (1994).
[CrossRef]

L. Vescan, T. Stoica, M. Goryll, K. Grimm, “Selective epitaxial growth of strained SiGe/Si for optoelectronic devices,” Mater. Sci. Eng., B 51, 166–169 (1998).
[CrossRef]

Opt. Lett. (1)

Phys. Rev. B (1)

C. G. Van de Walle, R. M. Martin, “Theoretical calculations of heterojunction discontinuities in the Si/Ge system,” Phys. Rev. B 34, 5621–5634 (1986).
[CrossRef]

Other (5)

R. Apetz, L. Vescan, R. Loo, R. Carius, H. Lüth, “Electroluminescence from strained Si/SiGe/Si heterostructure diodes,” in Proceedings of the 24th European Solid State Device Research Conference (Edinburgh, Scotland, September 11–15, 1994), p. 653.

A. Splett, “Integriert-optische Wellenleiter-Photodtektoren-Kombinationen in Silizium-Germanium-Legierungen,” Ph.D dissertation (Technische Universität, Berlin, D83, 1994).

P. N. Robson, P. C. Kendall, Rib Waveguide Theory by the Spectral Index Method (Research Studies Press, ltd., Taunton, Somerset, UK, 1990).

A. Vonsovici, “Structures à guides d’ondes optique Si sur isolant (SIMOX) et Si1-xGex/Si pour la modulation optique à λ = 1,3 µm,” Ph.D. thesis (Université Paris Sud, Orsay, France, 1996).

R. M. Knox, P. P. Tulios, “Integrated circuits for millimeter through optical frequency range,” in Proceedings of the Magnetic Resonance Imaging Symposium on Submillimeter Waves, Y. Fox, ed. (Polytechnic Press, Brooklyn, N.Y., 1970), pp. 497–516.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1

(a) Planar SiGe asymmetric and (b) symmetric waveguide configurations on a Si substrate.

Fig. 2
Fig. 2

SiGe 2D waveguide configurations: (a) rib, (b) stripe, (c) ridge, (d) symmetrized ridge.

Fig. 3
Fig. 3

Symmetric stripe SiGe 2D waveguide on Si substrate after selective epitaxy. The SiO2 is removed afterward.

Fig. 4
Fig. 4

Influence of the Si cap layer on the field confinement in the symmetric stripe 2D waveguide on a Si substrate. The waveguides are presented on the same scale. The width of the waveguide is 8 µm, the Si buffer layer is 0.08 µm, the SiGe thickness is 0.3 µm, and Si cap layer thickness has values 0.5, 1, and 1.5 µm, respectively in (a), (b), and (c). The inside circle is the region limited by 0.98Imax. The second circle is limited by 0.81Imax, and the third through ninth by 0.64Imax, 0.49Imax, 0.36Imax, 0.25Imax, 0.16Imax, 0.09Imax, 0.04Imax, and finally 0.01Imax.

Fig. 5
Fig. 5

Cutoff condition dependence of the Si cap layer thickness versus the thickness of the Si0.8Ge0.2 film, simulated by the SI and the EI methods and for a planar waveguide (infinitely large stripes). The waveguiding is ensured for a cap layer thickness above the corresponding curves.

Equations (1)

Equations on this page are rendered with MathJax. Learn more.

n[Si1-xGex]=n[Si]+0.18x.

Metrics