Abstract

A new ray picture model based on the multiple interference of light waves in dielectric resonant grating–waveguide structures is presented. The model clearly elucidates the phase relationship between the incident plane wave and the waves diffracted from the resonant grating structure that is responsible for the interference of these waves. As a result of this interference process the incident wave can be totally reflected at a certain wavelength and orientation angle. The model is used to describe and analyze this resonance behavior of the grating–waveguide structures as a function of wavelength and incidence angle. The analysis is verified experimentally with semiconductor (InGaAsP/InP) structures at wavelengths of 1.55 μm and also with dielectric (silicon nitride/SiO2) structures at wavelengths of 0.6 μm. All of the structures were formed by electron beam lithography and chemical vapor deposition. The measured results reveal that subnanometer resonance bandwidths and finesses as large as 6000 can be achieved at contrast ratios of 50 with relatively compact structures.

© 1997 Optical Society of America

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