Abstract

The optical Hall effect is a physical phenomenon that describes the occurrence of magnetic-field-induced dielectric displacement at optical wavelengths, transverse and longitudinal to the incident electric field, and analogous to the static electrical Hall effect. The electrical Hall effect and certain cases of the optical Hall effect observations can be explained by extensions of the classic Drude model for the transport of electrons in metals. The optical Hall effect is most useful for characterization of electrical properties in semiconductors. Among many advantages, while the optical Hall effect dispenses with the need of electrical contacts, electrical material properties such as effective mass and mobility parameters, including their anisotropy as well as carrier type and density, can be determined from the optical Hall effect. Measurement of the optical Hall effect can be performed within the concept of generalized ellipsometry at an oblique angle of incidence. In this paper, we review and discuss physical model equations, which can be used to calculate the optical Hall effect in single- and multiple-layered structures of semiconductor materials. We define the optical Hall effect dielectric function tensor, demonstrate diagonalization approaches, and show requirements for the optical Hall effect tensor from energy conservation. We discuss both continuum and quantum approaches, and we provide a brief description of the generalized ellipsometry concept, the Mueller matrix calculus, and a 4×4 matrix algebra to calculate data accessible by experiment. In a follow-up paper, we will discuss strategies and approaches for experimental data acquisition and analysis.

© 2016 Optical Society of America

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  1. M. Schubert, T. Hofmann, and C. M. Herzinger, “Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs,” J. Opt. Soc. Am. A 20, 347–356 (2003).
    [Crossref]
  2. T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
    [Crossref]
  3. T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).
  4. M. Schubert, T. Hofmann, and C. M. Herzinger, “Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures,” Thin Solid Films 455–456, 563–570 (2004).
    [Crossref]
  5. T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
    [Crossref]
  6. M. Schubert, “Another century of ellipsometry,” Ann. Phys. 15, 480–497 (2006).
    [Crossref]
  7. T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
    [Crossref]
  8. T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
    [Crossref]
  9. T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
    [Crossref]
  10. T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch, “Electron effective mass and phonon modes in GaAs incorporating Boron and Indium,” Appl. Phys. Lett. 90, 182110 (2007).
    [Crossref]
  11. T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert, “Optical Hall effect studies on modulation-doped AlxGa1−xAs:Si/GaAs quantum wells,” Phys. Stat. Solidi C 5, 1386–1390 (2008).
    [Crossref]
  12. T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
    [Crossref]
  13. T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
    [Crossref]
  14. S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
    [Crossref]
  15. T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
    [Crossref]
  16. P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).
  17. T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
    [Crossref]
  18. T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
    [Crossref]
  19. S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
    [Crossref]
  20. P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
    [Crossref]
  21. S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
    [Crossref]
  22. P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
    [Crossref]
  23. S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
    [Crossref]
  24. B. Kumara and S.-W. Kim, “Recent advances in power generation through piezoelectric nanogenerators,” J. Mater. Chem. 21, 18946–18958 (2011).
    [Crossref]
  25. L. T. Berger and K. Iniewski, Smart Grid Applications, Communications, and Security (Wiley, 2012).
  26. M. Groover, Automation, Production Systems, and Computer-Integrated Manufacturing (Prentice-Hall, 2007).
  27. L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
    [Crossref]
  28. M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
    [Crossref]
  29. https://newsroom.intel.com/news-releases/intel-and-micron-produce-breakthrough-memory-technology/ .
  30. Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
    [Crossref]
  31. B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, “Current saturation and voltage gain in bilayer graphene field effect transistors,” Nano Lett. 12, 1324–1328 (2012).
    [Crossref]
  32. G. E. Moore, “Cramming more components onto integrated circuits,” Proc. IEEE 86, 82–85 (1998).
  33. S. Borkar, “The exascale challenge,” in International Symposium on VLSI Design Automation and Test (2010), pp. 2–3.
  34. http://www.intel.com/content/www/us/en/silicon-innovations/intel-14nm-technology.html .
  35. R. Roy, V. G. Hill, and E. F. Osborn, “Polymorphism of Ga2O3 and the system Ga2O3,” J. Am. Chem. Soc. 74, 719–722 (1952).
    [Crossref]
  36. H. H. Tippins, “Optical absorption and photoconductivity in the band edge of β−Ga2O3,” Phys. Rev. 140A, A316–A319 (1965).
    [Crossref]
  37. J. F. Wager, “Transparent electronics,” Science 300, 1245–1246 (2003).
    [Crossref]
  38. K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “MBE grown Ga2O3 and its power device applications,” J. Cryst. Growth 378, 591–595 (2013).
    [Crossref]
  39. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Stat. Solidi A 211, 21–26 (2014).
    [Crossref]
  40. M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
    [Crossref]
  41. A. Parisini and R. Fornari, “Analysis of the scattering mechanisms controlling electron mobility in β−Ga2O3 crystals,” Semicond. Sci. Technol. 31, 035023 (2016).
    [Crossref]
  42. P. Drude, “Üeber die Gesetze der Reflexion und Brechung des Lichtes an der Grenze absorbirender Krystalle,” Ann. Phys. 268, 584–625 (1887).
    [Crossref]
  43. P. Drude, “Beobachtungen über die Reflexion des Lichtes am Antimonglanz,” Ann. Phys. 270, 489–531 (1888).
    [Crossref]
  44. P. Drude, “Bestimmung der optischen Constanten der Metalle,” Ann. Phys. Chem. 275, 481–554 (1890).
    [Crossref]
  45. H. Fujiwara, Spectroscopic Ellipsometry (Wiley, 2007).
  46. R. M. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, 1984).
  47. M. Schubert, Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons and Polaritons, Vol. 209 of Springer Tracts in Modern Physics (Springer, 2004).
  48. T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
    [Crossref]
  49. A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
    [Crossref]
  50. G. B. Wright and B. Lax, “Magnetoreflection experiments in intermetallics,” J. Appl. Phys. 32, 2113–2117 (1961).
    [Crossref]
  51. N. Hindley, “Cyclotron resonance and the free-carrier magneto-optical properties of a semiconductor,” Phys. Stat. Solidi B 7, 67–80 (1964).
    [Crossref]
  52. P. R. Schroeder, M. S. Dresselhaus, and A. Javan, “Location of electron and hole carriers in graphite from laser magnetoreflection data,” Phys. Rev. Lett. 20, 1292–1295 (1968).
    [Crossref]
  53. D. A. Platts, D. D. L. Chung, and M. S. Dresselhaus, “Far-infrared magnetoreflection studies of graphite intercalated with bromide,” Phys. Rev. B 15, 1087–1092 (1977).
    [Crossref]
  54. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, “Methods for magnetotransport characterization of IR detector materials,” Semicond. Sci. Technol. 8, 805–823 (1993).
    [Crossref]
  55. Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
    [Crossref]
  56. O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, “Faraday ellipticity and Faraday rotation of a doped-silicon wafer studied by terahertz time-domain spectroscopy,” J. Appl. Phys. 100, 033105 (2006).
    [Crossref]
  57. D. S. L. Abergel and V. I. Fal’ko, “Optical and magneto-optical far-infrared properties of bilayer graphene,” Phys. Rev. B 75, 155430 (2007).
    [Crossref]
  58. M. L. Sadowski, G. Martinez, M. Potemski, C. Berger, and W. A. de Heer, “Infrared magnetospectroscopy of two-dimensional electrons in epitaxial graphene,” AIP Conf. Proc. 893, 619–620 (2007).
  59. O. L. Berman, G. Gumbs, and Y. E. Lozovik, “Magnetoplasmons in layered graphene structures,” Phys. Rev. B 78, 085401 (2008).
    [Crossref]
  60. M. Koshino and T. Ando, “Magneto-optical properties of multilayer graphene,” Phys. Rev. B 77, 115313 (2008).
    [Crossref]
  61. M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
    [Crossref]
  62. I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko, “Multicomponent magneto-optical conductivity of multilayer graphene on SiC,” Phys. Rev. B 84, 035103 (2011).
    [Crossref]
  63. N. A. Goncharuk, L. Nádvorník, C. Faugeras, M. Orlita, and L. Smrčka, “Infrared magnetospectroscopy of graphite in tilted fields,” Phys. Rev. B 86, 155409 (2012).
    [Crossref]
  64. M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
    [Crossref]
  65. J. T. Devreese, ed., Theoretical Aspects and New Developments in Magneto-Optics (Springer, 1979).
  66. C. Pidgeon, “Free carrier optical properties of semiconductors,” in Handbook on Semiconductors, M. Balkanski, ed. (North-Holland, 1980).
  67. B. Rheinländer, “Der Einfluss der Energieverteilung der Ladungsträger in Halbleitern auf die Bestimmung ihrer effektiven Masse aus der Infrarot-Plasma-Reflexion,” Phys. Lett. 29A, 420–421 (1969).
    [Crossref]
  68. B. Rheinländer and H. Neumann, “Faraday rotation in n-type AlAs,” Phys. Stat. Solidi B 45, K9–K13 (1971).
    [Crossref]
  69. B. Rheinländer, H. Neumann, P. Fischer, and G. Kühn, “Anisotropic effective masses of electrons in AlAs,” Phys. Stat. Solidi B 49, K167–K169 (1972).
    [Crossref]
  70. M. E. Brodwin and R. J. Vernon, “Free-carrier magneto-microwave Kerr effect in semiconductors,” Phys. Rev. 140, A1390–A1400 (1965).
    [Crossref]
  71. G. Dresselhaus, A. F. Kip, and C. Kittel, “Cyclotron resonance of electrons and holes in silicon and germanium crystals,” Phys. Rev. 98, 368–384 (1955).
    [Crossref]
  72. K. Suzuki and J. C. Hensel, “Quantum resonances in the valence bands of germanium,” Phys. Rev. B 9, 4184–4218 (1974).
    [Crossref]
  73. N. Miura, Physics of Semiconductors in High Magnetic Fields (University, 2008).
  74. D. Some and A. Nurmikko, “Real-time electron cyclotron oscillations observed by terahertz techniques in semiconductor heterostructures,” Appl. Phys. Lett. 65, 3377–3379 (1994).
    [Crossref]
  75. X. Wang, D. J. Hilton, L. Rein, D. M. Mittleman, J. Kono, and J. L. Reno, “Coherent THz cyclotron oscillations in a two-dimensional electron gas,” Opt. Lett. 32, 1845–1847 (2007).
    [Crossref]
  76. X. Wang, D. J. Hilton, J. L. Reno, D. M. Mittleman, and J. Kono, “Direct measurement of cyclotron coherence times of high-mobility two-dimensional electron gases,” Opt. Express 18, 12354–12361 (2010).
    [Crossref]
  77. O. Morikawa, M. Tonouchi, and M. Hangyo, “Sub-THz spectroscopic system using a multimode laser diode and photoconductive antenna,” Appl. Phys. Lett. 75, 3772–3774 (1999).
    [Crossref]
  78. O. Morikawa, M. Tonouchi, and M. Hangyo, “A cross-correlation spectroscopy in subterahertz region using an incoherent light source,” Appl. Phys. Lett. 76, 1519–1521 (2000).
    [Crossref]
  79. M. Tonouchi, “Cutting-edge terahertz technology,” Nat. Photonics 1, 97–105 (2007).
    [Crossref]
  80. H. Sumikura, T. Nagashima, H. Kitahara, and M. Hangyo, “Development of a cryogen-free terahertz time-domain magnetooptical measurement system,” Jpn. J. Appl. Phys. 46, 1739–1744 (2007).
    [Crossref]
  81. W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
    [Crossref]
  82. D. Molter, F. Ellrich, T. Weinland, S. George, M. Goiran, F. Keilmann, R. Beigang, and J. Lèotin, “High-speed terahertz time-domain spectroscopy of cyclotron resonance in pulsed magnetic field,” Opt. Express 18, 26163–26168 (2010).
    [Crossref]
  83. D. Molter, G. Torosyan, G. Ballon, L. Drigo, R. Beigang, and J. Léotin, “Step-scan time-domain terahertz magneto-spectroscopy,” Opt. Express 20, 5993–6002 (2012).
    [Crossref]
  84. B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
    [Crossref]
  85. R. Shimano, Y. Ino, Y. P. Svirko, and M. Kuwata-Gonokami, “Terahertz frequency Hall measurement by magneto-optical Kerr spectroscopy in InAs,” Appl. Phys. Lett. 81, 199–201 (2002).
    [Crossref]
  86. I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
    [Crossref]
  87. C. M. Morris, R. V. Aguilar, A. V. Stier, and N. P. Armitage, “Polarization modulation time-domain terahertz polarimetry,” Opt. Express 20, 12303–12317 (2012).
    [Crossref]
  88. D. K. George, A. V. Stier, C. T. Ellis, B. D. McCombe, J. Černe, and A. G. Markelz, “Terahertz magneto-optical polarization modulation spectroscopy,” J. Opt. Soc. Am. B 29, 1406–1412 (2012).
    [Crossref]
  89. M. Neshat and N. P. Armitage, “Terahertz time-domain spectroscopic ellipsometry: instrumentation and calibration,” Opt. Express 20, 29063–29075 (2012).
    [Crossref]
  90. Y. Lubashevsky, L. Pan, T. Kirzhner, G. Koren, and N. Armitage, “Optical birefringence and dichroism of cuprate superconductors in the THz regime,” Phys. Rev. Lett. 112, 147001 (2014).
    [Crossref]
  91. Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
    [Crossref]
  92. W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
    [Crossref]
  93. M. A. Zudov, R. R. Du, J. A. Simmons, and J. L. Reno, “Shubnikov-de Haas-like oscillations in millimeter wave photoconductivity in a high-mobility two-dimensional electron gas,” Phys. Rev. B 64, 201311 (2001).
    [Crossref]
  94. T. Nagashima, M. Tani, and M. Hangyo, “Polarization-sensitive THz-TDS and its application to anisotropy sensing,” J. Infrared Millim. Terahertz Waves 34, 740–775 (2013).
    [Crossref]
  95. L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
    [Crossref]
  96. Y. Ino, R. Shimano, Y. Svirko, and M. Kuwata-Gonokami, “Terahertz time domain magneto-optical ellipsometry in reflection geometry,” Phys. Rev. B 70, 155101 (2004).
    [Crossref]
  97. K. Yatsugi, N. Matsumoto, T. Nagashima, and M. Hangyo, “Transport properties of free carriers in semiconductors studied by terahertz time domain magneto-optical ellipsometry,” Appl. Phys. Lett. 98, 212108 (2011).
    [Crossref]
  98. Y. Ikebe, T. Morimoto, R. Masutomi, T. Okamoto, H. Aoki, and R. Shimano, “Optical Hall effect in the integer quantum Hall regime,” Phys. Rev. Lett. 104, 256802 (2010).
    [Crossref]
  99. J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
    [Crossref]
  100. N. Ubrig, I. Crassee, J. Levallois, I. O. Nedoliuk, F. Fromm, M. Kaiser, T. Seyller, and A. B. Kuzmenko, “Fabry–Perot enhanced Faraday rotation in graphene,” Opt. Express 21, 24736–24741 (2013).
    [Crossref]
  101. J. Lloyd-Hughes, “Terahertz spectroscopy of quantum 2D electron systems,” J. Phys. D 47, 374006 (2014).
    [Crossref]
  102. W. S. Weiglhofer and A. Lakhtakia, Introduction to Complex Mediums for Optics and Electromagnetics (SPIE, 2003).
  103. E. D. Palik, S. Teitler, and R. F. Wallis, “Free carrier cyclotron resonance, Faraday rotation, and Voigt double refraction in compound semiconductors,” J. Appl. Phys. 32, 2132–2136 (1961).
    [Crossref]
  104. J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Theory of magnetoplasmons in semiconductors,” Phys. Rev. Lett. 28, 1455–1458 (1972).
    [Crossref]
  105. J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Interaction of surface magnetoplasmons and surface optical phonons in polar semiconductors,” Surf. Sci. 34, 73–80 (1973).
    [Crossref]
  106. R. F. Wallis, J. J. Brion, E. Burstein, and A. Hartstein, “Theory of surface polaritons in anisotropic dielectric media with application to surface magnetoplasmons in semiconductors,” Phys. Rev. B 9, 3424–3437 (1974).
    [Crossref]
  107. E. H. Hall, “On a new action of the magnet on electric currents,” Amer. J. Math. 2, 287–292 (1879).
    [Crossref]
  108. The electrical Hall effect is well known and has been described in many textbooks. It is beyond the scope of this paper to provide an in-depth review of the electrical Hall effect. The primary limitation in the electrical Hall effect is the physical requirement of ohmic contacts. Due to the fact that proper electric contact formation requires precise knowledge of surface potential functions for any given material and appropriate technological procedures, it is commonly difficult to provide equal contacts to multiple layered structures. Usually, contacts are made to the surface or bottom layer. Often, the actual passage, which the driving currents will take within the sample structure, is difficult to ascertain and hampers accurate data analysis.
  109. P. Drude, “Zur Ionentheorie der Metalle,” Physikal. Z. 1, 161–165 (1900).
  110. P. Drude, “Zur Elektronentheorie der Metalle,” Ann. Phys. 306, 566–613 (1900).
    [Crossref]
  111. J. K. Galt, W. A. Yager, and H. W. Dail, “Cyclotron resonance effects in graphite,” Phys. Rev. 103, 1586–1587 (1956).
    [Crossref]
  112. W. G. Spitzer and H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882–890 (1957).
    [Crossref]
  113. P. Nozières, “Cyclotron resonance in graphite,” Phys. Rev. 109, 1510–1521 (1958).
    [Crossref]
  114. M. Cardona, “Electron effective masses of InAs and GaAs as a function of temperature and doping,” Phys. Rev. 121, 752–758 (1961).
    [Crossref]
  115. P. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, 1999).
  116. T. Hofmann, M. Schubert, and C. M. Herzinger, “Far-infrared magneto-optic generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Proc. SPIE 4779, 90–97 (2002).
    [Crossref]
  117. T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
    [Crossref]
  118. H. Mueller, “Memorandum on the polarization optics of the photoelastic shutter,” Report of the OSRD project (Massachusetts Institute of Technology, 1943).
  119. R. C. Jones, “A new calculus for the treatment of optical systems V. a more general formulation, and description of another calculus,” J. Opt. Soc. Am. 37, 107–110 (1947).
    [Crossref]
  120. H. Mueller, “The foundation of optics (in the Proceedings of the Winter Meeting of the Optical Society of Americas, p. 660),” J. Opt. Soc. Am. 38, 657–670 (1948).
  121. E. Hecht, Optics (Addison-Wesley, 1987).
  122. P. S. Hauge, “Mueller matrix ellipsometry with imperfect compensators,” J. Opt. Soc. Am. 68, 1519–1528 (1978).
    [Crossref]
  123. M. Schubert, B. Rheinländer, J. A. Woollam, B. Johs, and C. M. Herzinger, “Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2,” J. Opt. Soc. Am. A 13, 875–883 (1996).
    [Crossref]
  124. M. Schubert, “Polarization-dependent optical parameters of arbitrarily anisotropic homogeneous layered systems,” Phys. Rev. B 53, 4265–4274 (1996).
    [Crossref]
  125. G. E. Jellison and F. Modine, “Two-modulator generalized ellipsometry: experiment and calibration,” Appl. Opt. 36, 8184–8189 (1997).
    [Crossref]
  126. G. E. Jellison and F. A. Modine, “Two-modulator generalized ellipsometry: theory,” Appl. Opt. 36, 8190–8198 (1997).
    [Crossref]
  127. T. E. Tiwald and M. Schubert, “Measurement of rutile TiO2 dielectric tensor from 0.148 to 33 μm using generalized ellipsometry,” Proc. SPIE 4103, 19–29 (2000).
    [Crossref]
  128. M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
    [Crossref]
  129. M. Schubert, “Generalized ellipsometry,” in Introduction to Complex Mediums for Optics and Electromagnetics, W. S. Weiglhofer and A. Lakhtakia, eds. (SPIE, 2003), pp. 677–710.
  130. H. Thompkins and E. A. Irene, eds., Handbook of Ellipsometry (William Andrew, 2004).
  131. G. E. Jellison, J. D. Hunn, and C. M. Rouleau, “Normal-incidence generalized ellipsometry using the two-modulator generalized ellipsometry microscope,” Appl. Opt. 45, 5479–5488 (2006).
    [Crossref]
  132. O. Arteaga, J. Freudenthal, B. Wang, and B. Kahr, “Mueller matrix polarimetry with four photoelastic modulators: theory and calibration,” Appl. Opt. 51, 6805–6817 (2012).
    [Crossref]
  133. O. Arteaga, M. Baldrìs, J. Antó, A. Canillas, E. Pascual, and E. Bertran, “Mueller matrix microscope with a dual continuous rotating compensator setup and digital demodulation,” Appl. Opt. 53, 2236–2245 (2014).
    [Crossref]
  134. Conceptually, a magneto electric optical Hall effect also may exist, where a current driven by the time-harmonic electric field component, under the influence of an external magnetic field, produces in addition to, or separately from a magneto-optic dielectric displacement, a magnetization response.
  135. The dielectric tensor is considered nonlocal in time but local in space, that is, frequency dependent but not wave vector dependent. A charged compressible fluid model resulting in a dielectric tensor for a nonlocal spatial response is described by Weiglhofer. In principle, the optical Hall effect should be observable in semiconductors with very large carrier concentrations where nonlocal spatial effects may need to be considered.
  136. C. Klingshirn, Semiconductor Optics (Springer-Verlag, 1995).
  137. R. H. Muller, “Definitions and conventions in ellipsometry,” Surf. Sci. 16, 14–33 (1969).
    [Crossref]
  138. The transition from the dielectric function tensor of a given anisotropic material into the four indices of refraction is discussed in previous work [124,129].
  139. W. Kleber and H.-J. Bautsch, Einführung in die Kristallographie (de Gruyter, 2010).
  140. T. Hofmann, “Far-infrared spectroscopic ellipsometry on semiconductor heterostructures,” Ph.D. thesis (University of Leipzig, 2004).
  141. A common requirement in theoretical studies of the electromagnetic response of matter consists in the imposition that a specific medium should be Lorentz reciprocal. For a dielectric medium (the magnetic susceptibility tensor being diagonal and unity), this means that the dielectric tensor is equal to its transposed form. The magnetized plasma and more general types of gyrotropic mediums belong to the most prominent representatives of nonreciprocal mediums. A gyrotropic material is a material in which left- and right-rotating elliptical polarizations can propagate at different speeds. The gyrotropic effect caused by a quasi-static magnetic field breaks the time-reversal symmetry as well as the Lorentz reciprocity. For more information see, for example, [102].
  142. Corresponding expressions for arbitrary orientations of the magnetic field are given by EC′=Aφ,θ,ψ(R)EC, with the Euler angles given by B|B|=Aϕ,θ,ψ(R)(0,0,1)T.
  143. Corresponding transformation matrices for arbitrary orientations of the magnetic field are given by (A(C))=(Aϕ,θ,ψ(R))−1A(C)Aϕ,θ,ψ(R), with the Euler angles given by B|B|=Aϕ,θ,ψ(R)(0,0,1)T.
  144. For ΨE=π/4 and ΔE=π/2, the elliptic eigensystem is equivalent to the circular eigensystem A(E)=A(C).
  145. L. Landau and E. Lifšic, Elektrodynamik der Kontinua, Lehrbuch der theoretischen Physik (Akademie Verlag, 1990).
  146. Note that Eq. (17) must hold for any E0; thus, Eq. (17) can be stated for each λk separately.
  147. In the following equation the Einstein notation is used, and the covariance and contravariance are ignored because all coordinate systems are Cartesian. The summation is only executed over pairs of lower indices.
  148. C. Kittel, Introduction to Solid State Physics (Wiley, 2009).
  149. D. W. Berreman and F. C. Unterwald, “Adjusting poles and zeros of dielectric dispersion to fit reststrahlen of PrCl3 and LaCl3,” Phys. Rev. 174, 791–799 (1968).
    [Crossref]
  150. F. Gervais and B. Piriou, “Anharmonicity in several-polar-mode crystals: adjusting phonon self-energy of LO and TO modes in Al2O3 and TiO2 to fit infrared reflectivity,” J. Phys. C 7, 2374–2386 (1974).
  151. M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).
  152. A. S. Barker, “Transverse and longitudinal optic mode study in MgF2 and ZnF2,” Phys. Rev. 136, A1290–A1295 (1964).
    [Crossref]
  153. T. Hofmann, V. Gottschalch, and M. Schubert, “Far-infrared dielectric anisotropy and phonon modes in spontaneously CuPt-ordered Ga0.52In0.48P,” Phys. Rev. B 66, 195204 (2002).
  154. A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
    [Crossref]
  155. M. L. Sadowski, G. Martynez, M. Potemski, C. Berger, and W. A. D. Heer, “Magneto-spectroscopy of epitaxial graphene,” Int. J. Mod. Phys. B 21, 1145–1154 (2007).
    [Crossref]
  156. W. W. Toy, M. S. Dresselhaus, and G. Dresselhaus, “Minority carriers in graphite and the H-point magnetoreflection spectra,” Phys. Rev. B 15, 4077–4090 (1977).
    [Crossref]
  157. P. J. C. Kühne, “The optical Hall effect in three- and two-dimensional materials,” Ph.D. dissertation (University of Nebraska, 2014).
  158. Note that the constant but generally complex amplitude parameter in Eq. (30) also may be augmented with a frequency-dependent imaginary part in order to represent the effect of an harmonic coupling. See also [150].
  159. The same formalism can be used in case of holes but with a different effective mass parameter.
  160. L. Landau, “Diamagnetismus der Metalle,” Z. Phys. 64, 629–637 (1930).
  161. A. Geim and K. Novoselov, “The rise of graphene,” Nat. Mater. 6, 183–191 (2007).
    [Crossref]
  162. M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
    [Crossref]
  163. M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
    [Crossref]
  164. Note that electric field vectors E contain four independent pieces of information if the plane wave is fully coherent and time harmonic. Representing time averages over infinite observation times, the four parameters can be used to characterize the electric field amplitude, absolute phase, ellipticity, and orientation of the polarization ellipse.
  165. R. C. Jones, “A new calculus for the treatment of optical systems,” J. Opt. Soc. Am. 31, 488–493 (1941).
    [Crossref]
  166. A. Gerrard and J. Burch, Introduction to Matrix Methods in Optics, Dover Books on Physics (Dover, 1994).
  167. D. Goldstein, Polarized Light, 3rd ed. (CRC Press, 2011).
  168. Note the four independent pieces of information contained in the Stokes vector. The four parameters can be used to characterize the total light intensity, degree of polarization, ellipticity, and orientation of the polarization ellipse.
  169. A. Röseler, Infrared Spectroscopic Ellipsometry (Akademie-Verlag, 1990).
  170. K. Järrendahl and B. Kahr, “Hans Mueller (1900-1965),” Woollam Annual Newsletter 2011(11), 8–9 (2011).
  171. B. Rheinländer, “Infrarot-Faraday-Effekt an Halbleitern,” Master’s thesis (Universität Leipzig, 1965).
  172. Y. Ikebe and R. Shimano, “Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect,” Appl. Phys. Lett. 92, 012111 (2008).
    [Crossref]
  173. T. Morimoto, M. Koshino, and H. Aoki, “Faraday rotation in bilayer and trilayer graphene in the quantum Hall regime,” Phys. Rev. B 86, 155426 (2012).
    [Crossref]
  174. D. W. Berreman, “Optics in stratified and anisotropic media: 4 × 4-matrix formulation,” J. Opt. Soc. Am. 62, 502–510 (1972).
    [Crossref]
  175. M. Schubert, “Theory and application of generalized ellipsometry,” in Handbook of Ellipsometry, E. Irene and H. Tompkins, eds. (William Andrew, 2004).
  176. H. Wöhler, G. Haas, M. Fritsch, and D. A. Mlynski, “Faster 4 × 4 matrix method for uniaxial inhomogeneous media,” J. Opt. Soc. Am. A 5, 1554–1557 (1988).
    [Crossref]
  177. For example, j=2→{k,l,m}={0,1,3}.
  178. W. Xu, L. Wood, and T. Golding, “Optical degeneracies in anisotropic layered media: Treatment of singularities in a 4 × 4 matrix formalism,” Phys. Rev. B 61, 1740–1743 (2000).
    [Crossref]
  179. For example, explicit expressions for the complex Fresnel transmission coefficients can be found in [45].

2016 (4)

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

A. Parisini and R. Fornari, “Analysis of the scattering mechanisms controlling electron mobility in β−Ga2O3 crystals,” Semicond. Sci. Technol. 31, 035023 (2016).
[Crossref]

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
[Crossref]

2015 (3)

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
[Crossref]

2014 (5)

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Stat. Solidi A 211, 21–26 (2014).
[Crossref]

P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
[Crossref]

Y. Lubashevsky, L. Pan, T. Kirzhner, G. Koren, and N. Armitage, “Optical birefringence and dichroism of cuprate superconductors in the THz regime,” Phys. Rev. Lett. 112, 147001 (2014).
[Crossref]

J. Lloyd-Hughes, “Terahertz spectroscopy of quantum 2D electron systems,” J. Phys. D 47, 374006 (2014).
[Crossref]

O. Arteaga, M. Baldrìs, J. Antó, A. Canillas, E. Pascual, and E. Bertran, “Mueller matrix microscope with a dual continuous rotating compensator setup and digital demodulation,” Appl. Opt. 53, 2236–2245 (2014).
[Crossref]

2013 (7)

N. Ubrig, I. Crassee, J. Levallois, I. O. Nedoliuk, F. Fromm, M. Kaiser, T. Seyller, and A. B. Kuzmenko, “Fabry–Perot enhanced Faraday rotation in graphene,” Opt. Express 21, 24736–24741 (2013).
[Crossref]

T. Nagashima, M. Tani, and M. Hangyo, “Polarization-sensitive THz-TDS and its application to anisotropy sensing,” J. Infrared Millim. Terahertz Waves 34, 740–775 (2013).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “MBE grown Ga2O3 and its power device applications,” J. Cryst. Growth 378, 591–595 (2013).
[Crossref]

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
[Crossref]

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

2012 (9)

N. A. Goncharuk, L. Nádvorník, C. Faugeras, M. Orlita, and L. Smrčka, “Infrared magnetospectroscopy of graphite in tilted fields,” Phys. Rev. B 86, 155409 (2012).
[Crossref]

B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, “Current saturation and voltage gain in bilayer graphene field effect transistors,” Nano Lett. 12, 1324–1328 (2012).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

D. Molter, G. Torosyan, G. Ballon, L. Drigo, R. Beigang, and J. Léotin, “Step-scan time-domain terahertz magneto-spectroscopy,” Opt. Express 20, 5993–6002 (2012).
[Crossref]

C. M. Morris, R. V. Aguilar, A. V. Stier, and N. P. Armitage, “Polarization modulation time-domain terahertz polarimetry,” Opt. Express 20, 12303–12317 (2012).
[Crossref]

D. K. George, A. V. Stier, C. T. Ellis, B. D. McCombe, J. Černe, and A. G. Markelz, “Terahertz magneto-optical polarization modulation spectroscopy,” J. Opt. Soc. Am. B 29, 1406–1412 (2012).
[Crossref]

M. Neshat and N. P. Armitage, “Terahertz time-domain spectroscopic ellipsometry: instrumentation and calibration,” Opt. Express 20, 29063–29075 (2012).
[Crossref]

O. Arteaga, J. Freudenthal, B. Wang, and B. Kahr, “Mueller matrix polarimetry with four photoelastic modulators: theory and calibration,” Appl. Opt. 51, 6805–6817 (2012).
[Crossref]

T. Morimoto, M. Koshino, and H. Aoki, “Faraday rotation in bilayer and trilayer graphene in the quantum Hall regime,” Phys. Rev. B 86, 155426 (2012).
[Crossref]

2011 (10)

K. Järrendahl and B. Kahr, “Hans Mueller (1900-1965),” Woollam Annual Newsletter 2011(11), 8–9 (2011).

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

K. Yatsugi, N. Matsumoto, T. Nagashima, and M. Hangyo, “Transport properties of free carriers in semiconductors studied by terahertz time domain magneto-optical ellipsometry,” Appl. Phys. Lett. 98, 212108 (2011).
[Crossref]

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).

T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]

B. Kumara and S.-W. Kim, “Recent advances in power generation through piezoelectric nanogenerators,” J. Mater. Chem. 21, 18946–18958 (2011).
[Crossref]

I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko, “Multicomponent magneto-optical conductivity of multilayer graphene on SiC,” Phys. Rev. B 84, 035103 (2011).
[Crossref]

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

2010 (5)

D. Molter, F. Ellrich, T. Weinland, S. George, M. Goiran, F. Keilmann, R. Beigang, and J. Lèotin, “High-speed terahertz time-domain spectroscopy of cyclotron resonance in pulsed magnetic field,” Opt. Express 18, 26163–26168 (2010).
[Crossref]

X. Wang, D. J. Hilton, J. L. Reno, D. M. Mittleman, and J. Kono, “Direct measurement of cyclotron coherence times of high-mobility two-dimensional electron gases,” Opt. Express 18, 12354–12361 (2010).
[Crossref]

Y. Ikebe, T. Morimoto, R. Masutomi, T. Okamoto, H. Aoki, and R. Shimano, “Optical Hall effect in the integer quantum Hall regime,” Phys. Rev. Lett. 104, 256802 (2010).
[Crossref]

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]

2009 (1)

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

2008 (8)

O. L. Berman, G. Gumbs, and Y. E. Lozovik, “Magnetoplasmons in layered graphene structures,” Phys. Rev. B 78, 085401 (2008).
[Crossref]

M. Koshino and T. Ando, “Magneto-optical properties of multilayer graphene,” Phys. Rev. B 77, 115313 (2008).
[Crossref]

T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert, “Optical Hall effect studies on modulation-doped AlxGa1−xAs:Si/GaAs quantum wells,” Phys. Stat. Solidi C 5, 1386–1390 (2008).
[Crossref]

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
[Crossref]

T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
[Crossref]

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

Y. Ikebe and R. Shimano, “Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect,” Appl. Phys. Lett. 92, 012111 (2008).
[Crossref]

2007 (9)

A. Geim and K. Novoselov, “The rise of graphene,” Nat. Mater. 6, 183–191 (2007).
[Crossref]

M. L. Sadowski, G. Martynez, M. Potemski, C. Berger, and W. A. D. Heer, “Magneto-spectroscopy of epitaxial graphene,” Int. J. Mod. Phys. B 21, 1145–1154 (2007).
[Crossref]

T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch, “Electron effective mass and phonon modes in GaAs incorporating Boron and Indium,” Appl. Phys. Lett. 90, 182110 (2007).
[Crossref]

M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

D. S. L. Abergel and V. I. Fal’ko, “Optical and magneto-optical far-infrared properties of bilayer graphene,” Phys. Rev. B 75, 155430 (2007).
[Crossref]

M. L. Sadowski, G. Martinez, M. Potemski, C. Berger, and W. A. de Heer, “Infrared magnetospectroscopy of two-dimensional electrons in epitaxial graphene,” AIP Conf. Proc. 893, 619–620 (2007).

M. Tonouchi, “Cutting-edge terahertz technology,” Nat. Photonics 1, 97–105 (2007).
[Crossref]

H. Sumikura, T. Nagashima, H. Kitahara, and M. Hangyo, “Development of a cryogen-free terahertz time-domain magnetooptical measurement system,” Jpn. J. Appl. Phys. 46, 1739–1744 (2007).
[Crossref]

X. Wang, D. J. Hilton, L. Rein, D. M. Mittleman, J. Kono, and J. L. Reno, “Coherent THz cyclotron oscillations in a two-dimensional electron gas,” Opt. Lett. 32, 1845–1847 (2007).
[Crossref]

2006 (6)

O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, “Faraday ellipticity and Faraday rotation of a doped-silicon wafer studied by terahertz time-domain spectroscopy,” J. Appl. Phys. 100, 033105 (2006).
[Crossref]

M. Schubert, “Another century of ellipsometry,” Ann. Phys. 15, 480–497 (2006).
[Crossref]

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
[Crossref]

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]

G. E. Jellison, J. D. Hunn, and C. M. Rouleau, “Normal-incidence generalized ellipsometry using the two-modulator generalized ellipsometry microscope,” Appl. Opt. 45, 5479–5488 (2006).
[Crossref]

2005 (1)

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

2004 (3)

M. Schubert, T. Hofmann, and C. M. Herzinger, “Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures,” Thin Solid Films 455–456, 563–570 (2004).
[Crossref]

M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).

Y. Ino, R. Shimano, Y. Svirko, and M. Kuwata-Gonokami, “Terahertz time domain magneto-optical ellipsometry in reflection geometry,” Phys. Rev. B 70, 155101 (2004).
[Crossref]

2003 (5)

M. Schubert, T. Hofmann, and C. M. Herzinger, “Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs,” J. Opt. Soc. Am. A 20, 347–356 (2003).
[Crossref]

T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
[Crossref]

T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).

J. F. Wager, “Transparent electronics,” Science 300, 1245–1246 (2003).
[Crossref]

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

2002 (4)

R. Shimano, Y. Ino, Y. P. Svirko, and M. Kuwata-Gonokami, “Terahertz frequency Hall measurement by magneto-optical Kerr spectroscopy in InAs,” Appl. Phys. Lett. 81, 199–201 (2002).
[Crossref]

T. Hofmann, M. Schubert, and C. M. Herzinger, “Far-infrared magneto-optic generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Proc. SPIE 4779, 90–97 (2002).
[Crossref]

T. Hofmann, V. Gottschalch, and M. Schubert, “Far-infrared dielectric anisotropy and phonon modes in spontaneously CuPt-ordered Ga0.52In0.48P,” Phys. Rev. B 66, 195204 (2002).

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

2001 (3)

M. A. Zudov, R. R. Du, J. A. Simmons, and J. L. Reno, “Shubnikov-de Haas-like oscillations in millimeter wave photoconductivity in a high-mobility two-dimensional electron gas,” Phys. Rev. B 64, 201311 (2001).
[Crossref]

Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

2000 (4)

O. Morikawa, M. Tonouchi, and M. Hangyo, “A cross-correlation spectroscopy in subterahertz region using an incoherent light source,” Appl. Phys. Lett. 76, 1519–1521 (2000).
[Crossref]

T. E. Tiwald and M. Schubert, “Measurement of rutile TiO2 dielectric tensor from 0.148 to 33 μm using generalized ellipsometry,” Proc. SPIE 4103, 19–29 (2000).
[Crossref]

A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
[Crossref]

W. Xu, L. Wood, and T. Golding, “Optical degeneracies in anisotropic layered media: Treatment of singularities in a 4 × 4 matrix formalism,” Phys. Rev. B 61, 1740–1743 (2000).
[Crossref]

1999 (1)

O. Morikawa, M. Tonouchi, and M. Hangyo, “Sub-THz spectroscopic system using a multimode laser diode and photoconductive antenna,” Appl. Phys. Lett. 75, 3772–3774 (1999).
[Crossref]

1998 (1)

G. E. Moore, “Cramming more components onto integrated circuits,” Proc. IEEE 86, 82–85 (1998).

1997 (3)

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

G. E. Jellison and F. Modine, “Two-modulator generalized ellipsometry: experiment and calibration,” Appl. Opt. 36, 8184–8189 (1997).
[Crossref]

G. E. Jellison and F. A. Modine, “Two-modulator generalized ellipsometry: theory,” Appl. Opt. 36, 8190–8198 (1997).
[Crossref]

1996 (3)

M. Schubert, B. Rheinländer, J. A. Woollam, B. Johs, and C. M. Herzinger, “Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2,” J. Opt. Soc. Am. A 13, 875–883 (1996).
[Crossref]

M. Schubert, “Polarization-dependent optical parameters of arbitrarily anisotropic homogeneous layered systems,” Phys. Rev. B 53, 4265–4274 (1996).
[Crossref]

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

1994 (1)

D. Some and A. Nurmikko, “Real-time electron cyclotron oscillations observed by terahertz techniques in semiconductor heterostructures,” Appl. Phys. Lett. 65, 3377–3379 (1994).
[Crossref]

1993 (1)

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, “Methods for magnetotransport characterization of IR detector materials,” Semicond. Sci. Technol. 8, 805–823 (1993).
[Crossref]

1988 (1)

1978 (1)

1977 (2)

W. W. Toy, M. S. Dresselhaus, and G. Dresselhaus, “Minority carriers in graphite and the H-point magnetoreflection spectra,” Phys. Rev. B 15, 4077–4090 (1977).
[Crossref]

D. A. Platts, D. D. L. Chung, and M. S. Dresselhaus, “Far-infrared magnetoreflection studies of graphite intercalated with bromide,” Phys. Rev. B 15, 1087–1092 (1977).
[Crossref]

1974 (3)

K. Suzuki and J. C. Hensel, “Quantum resonances in the valence bands of germanium,” Phys. Rev. B 9, 4184–4218 (1974).
[Crossref]

F. Gervais and B. Piriou, “Anharmonicity in several-polar-mode crystals: adjusting phonon self-energy of LO and TO modes in Al2O3 and TiO2 to fit infrared reflectivity,” J. Phys. C 7, 2374–2386 (1974).

R. F. Wallis, J. J. Brion, E. Burstein, and A. Hartstein, “Theory of surface polaritons in anisotropic dielectric media with application to surface magnetoplasmons in semiconductors,” Phys. Rev. B 9, 3424–3437 (1974).
[Crossref]

1973 (1)

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Interaction of surface magnetoplasmons and surface optical phonons in polar semiconductors,” Surf. Sci. 34, 73–80 (1973).
[Crossref]

1972 (3)

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Theory of magnetoplasmons in semiconductors,” Phys. Rev. Lett. 28, 1455–1458 (1972).
[Crossref]

D. W. Berreman, “Optics in stratified and anisotropic media: 4 × 4-matrix formulation,” J. Opt. Soc. Am. 62, 502–510 (1972).
[Crossref]

B. Rheinländer, H. Neumann, P. Fischer, and G. Kühn, “Anisotropic effective masses of electrons in AlAs,” Phys. Stat. Solidi B 49, K167–K169 (1972).
[Crossref]

1971 (1)

B. Rheinländer and H. Neumann, “Faraday rotation in n-type AlAs,” Phys. Stat. Solidi B 45, K9–K13 (1971).
[Crossref]

1969 (2)

B. Rheinländer, “Der Einfluss der Energieverteilung der Ladungsträger in Halbleitern auf die Bestimmung ihrer effektiven Masse aus der Infrarot-Plasma-Reflexion,” Phys. Lett. 29A, 420–421 (1969).
[Crossref]

R. H. Muller, “Definitions and conventions in ellipsometry,” Surf. Sci. 16, 14–33 (1969).
[Crossref]

1968 (2)

D. W. Berreman and F. C. Unterwald, “Adjusting poles and zeros of dielectric dispersion to fit reststrahlen of PrCl3 and LaCl3,” Phys. Rev. 174, 791–799 (1968).
[Crossref]

P. R. Schroeder, M. S. Dresselhaus, and A. Javan, “Location of electron and hole carriers in graphite from laser magnetoreflection data,” Phys. Rev. Lett. 20, 1292–1295 (1968).
[Crossref]

1965 (2)

M. E. Brodwin and R. J. Vernon, “Free-carrier magneto-microwave Kerr effect in semiconductors,” Phys. Rev. 140, A1390–A1400 (1965).
[Crossref]

H. H. Tippins, “Optical absorption and photoconductivity in the band edge of β−Ga2O3,” Phys. Rev. 140A, A316–A319 (1965).
[Crossref]

1964 (2)

N. Hindley, “Cyclotron resonance and the free-carrier magneto-optical properties of a semiconductor,” Phys. Stat. Solidi B 7, 67–80 (1964).
[Crossref]

A. S. Barker, “Transverse and longitudinal optic mode study in MgF2 and ZnF2,” Phys. Rev. 136, A1290–A1295 (1964).
[Crossref]

1961 (3)

M. Cardona, “Electron effective masses of InAs and GaAs as a function of temperature and doping,” Phys. Rev. 121, 752–758 (1961).
[Crossref]

E. D. Palik, S. Teitler, and R. F. Wallis, “Free carrier cyclotron resonance, Faraday rotation, and Voigt double refraction in compound semiconductors,” J. Appl. Phys. 32, 2132–2136 (1961).
[Crossref]

G. B. Wright and B. Lax, “Magnetoreflection experiments in intermetallics,” J. Appl. Phys. 32, 2113–2117 (1961).
[Crossref]

1958 (1)

P. Nozières, “Cyclotron resonance in graphite,” Phys. Rev. 109, 1510–1521 (1958).
[Crossref]

1957 (1)

W. G. Spitzer and H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882–890 (1957).
[Crossref]

1956 (1)

J. K. Galt, W. A. Yager, and H. W. Dail, “Cyclotron resonance effects in graphite,” Phys. Rev. 103, 1586–1587 (1956).
[Crossref]

1955 (1)

G. Dresselhaus, A. F. Kip, and C. Kittel, “Cyclotron resonance of electrons and holes in silicon and germanium crystals,” Phys. Rev. 98, 368–384 (1955).
[Crossref]

1952 (1)

R. Roy, V. G. Hill, and E. F. Osborn, “Polymorphism of Ga2O3 and the system Ga2O3,” J. Am. Chem. Soc. 74, 719–722 (1952).
[Crossref]

1948 (1)

1947 (1)

1941 (1)

1930 (1)

L. Landau, “Diamagnetismus der Metalle,” Z. Phys. 64, 629–637 (1930).

1900 (2)

P. Drude, “Zur Ionentheorie der Metalle,” Physikal. Z. 1, 161–165 (1900).

P. Drude, “Zur Elektronentheorie der Metalle,” Ann. Phys. 306, 566–613 (1900).
[Crossref]

1890 (1)

P. Drude, “Bestimmung der optischen Constanten der Metalle,” Ann. Phys. Chem. 275, 481–554 (1890).
[Crossref]

1888 (1)

P. Drude, “Beobachtungen über die Reflexion des Lichtes am Antimonglanz,” Ann. Phys. 270, 489–531 (1888).
[Crossref]

1887 (1)

P. Drude, “Üeber die Gesetze der Reflexion und Brechung des Lichtes an der Grenze absorbirender Krystalle,” Ann. Phys. 268, 584–625 (1887).
[Crossref]

1879 (1)

E. H. Hall, “On a new action of the magnet on electric currents,” Amer. J. Math. 2, 287–292 (1879).
[Crossref]

Abergel, D. S. L.

D. S. L. Abergel and V. I. Fal’ko, “Optical and magneto-optical far-infrared properties of bilayer graphene,” Phys. Rev. B 75, 155430 (2007).
[Crossref]

Acbas, G.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

Agarwal, K. C.

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

Aguilar, R. V.

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

C. M. Morris, R. V. Aguilar, A. V. Stier, and N. P. Armitage, “Polarization modulation time-domain terahertz polarimetry,” Opt. Express 20, 12303–12317 (2012).
[Crossref]

Akasaki, I.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

Alause, H.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Amano, H.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Ambacher, O.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Amono, H.

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

Ando, T.

M. Koshino and T. Ando, “Magneto-optical properties of multilayer graphene,” Phys. Rev. B 77, 115313 (2008).
[Crossref]

Antó, J.

Aoki, H.

T. Morimoto, M. Koshino, and H. Aoki, “Faraday rotation in bilayer and trilayer graphene in the quantum Hall regime,” Phys. Rev. B 86, 155426 (2012).
[Crossref]

Y. Ikebe, T. Morimoto, R. Masutomi, T. Okamoto, H. Aoki, and R. Shimano, “Optical Hall effect in the integer quantum Hall regime,” Phys. Rev. Lett. 104, 256802 (2010).
[Crossref]

Armitage, N.

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

Y. Lubashevsky, L. Pan, T. Kirzhner, G. Koren, and N. Armitage, “Optical birefringence and dichroism of cuprate superconductors in the THz regime,” Phys. Rev. Lett. 112, 147001 (2014).
[Crossref]

Armitage, N. P.

Arnold, D. A.

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, “Methods for magnetotransport characterization of IR detector materials,” Semicond. Sci. Technol. 8, 805–823 (1993).
[Crossref]

Arnold, M. D.

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

Arteaga, O.

As, D. J.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Azzam, R. M.

R. M. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, 1984).

Baldrìs, M.

Ballon, G.

Barker, A. S.

A. S. Barker, “Transverse and longitudinal optic mode study in MgF2 and ZnF2,” Phys. Rev. 136, A1290–A1295 (1964).
[Crossref]

Barra, A.-L.

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

Bartels, A.

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

Bartoli, F. J.

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, “Methods for magnetotransport characterization of IR detector materials,” Semicond. Sci. Technol. 8, 805–823 (1993).
[Crossref]

Bashara, N. M.

R. M. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, 1984).

Bautsch, H.-J.

W. Kleber and H.-J. Bautsch, Einführung in die Kristallographie (de Gruyter, 2010).

Beck, M.

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

Beigang, R.

Bel’akov, V.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Berger, C.

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

M. L. Sadowski, G. Martynez, M. Potemski, C. Berger, and W. A. D. Heer, “Magneto-spectroscopy of epitaxial graphene,” Int. J. Mod. Phys. B 21, 1145–1154 (2007).
[Crossref]

M. L. Sadowski, G. Martinez, M. Potemski, C. Berger, and W. A. de Heer, “Infrared magnetospectroscopy of two-dimensional electrons in epitaxial graphene,” AIP Conf. Proc. 893, 619–620 (2007).

Berger, L. T.

L. T. Berger and K. Iniewski, Smart Grid Applications, Communications, and Security (Wiley, 2012).

Berman, O. L.

O. L. Berman, G. Gumbs, and Y. E. Lozovik, “Magnetoplasmons in layered graphene structures,” Phys. Rev. B 78, 085401 (2008).
[Crossref]

Berreman, D. W.

D. W. Berreman, “Optics in stratified and anisotropic media: 4 × 4-matrix formulation,” J. Opt. Soc. Am. 62, 502–510 (1972).
[Crossref]

D. W. Berreman and F. C. Unterwald, “Adjusting poles and zeros of dielectric dispersion to fit reststrahlen of PrCl3 and LaCl3,” Phys. Rev. 174, 791–799 (1968).
[Crossref]

Bertran, E.

Bonn, M.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Boosalis, A.

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]

Borkar, S.

S. Borkar, “The exascale challenge,” in International Symposium on VLSI Design Automation and Test (2010), pp. 2–3.

Bostwick, A.

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Böttcher, T.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Brahlek, M.

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

Brion, J. J.

R. F. Wallis, J. J. Brion, E. Burstein, and A. Hartstein, “Theory of surface polaritons in anisotropic dielectric media with application to surface magnetoplasmons in semiconductors,” Phys. Rev. B 9, 3424–3437 (1974).
[Crossref]

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Interaction of surface magnetoplasmons and surface optical phonons in polar semiconductors,” Surf. Sci. 34, 73–80 (1973).
[Crossref]

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Theory of magnetoplasmons in semiconductors,” Phys. Rev. Lett. 28, 1455–1458 (1972).
[Crossref]

Brodwin, M. E.

M. E. Brodwin and R. J. Vernon, “Free-carrier magneto-microwave Kerr effect in semiconductors,” Phys. Rev. 140, A1390–A1400 (1965).
[Crossref]

Burch, J.

A. Gerrard and J. Burch, Introduction to Matrix Methods in Optics, Dover Books on Physics (Dover, 1994).

Burstein, E.

R. F. Wallis, J. J. Brion, E. Burstein, and A. Hartstein, “Theory of surface polaritons in anisotropic dielectric media with application to surface magnetoplasmons in semiconductors,” Phys. Rev. B 9, 3424–3437 (1974).
[Crossref]

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Interaction of surface magnetoplasmons and surface optical phonons in polar semiconductors,” Surf. Sci. 34, 73–80 (1973).
[Crossref]

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Theory of magnetoplasmons in semiconductors,” Phys. Rev. Lett. 28, 1455–1458 (1972).
[Crossref]

Camassel, J.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Canillas, A.

Cardona, M.

M. Cardona, “Electron effective masses of InAs and GaAs as a function of temperature and doping,” Phys. Rev. 121, 752–758 (1961).
[Crossref]

P. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, 1999).

Carlin, J.-F.

Casper, F.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Cerne, J.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

D. K. George, A. V. Stier, C. T. Ellis, B. D. McCombe, J. Černe, and A. G. Markelz, “Terahertz magneto-optical polarization modulation spectroscopy,” J. Opt. Soc. Am. B 29, 1406–1412 (2012).
[Crossref]

Chavdarov, T.

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
[Crossref]

Chen, J.-T.

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

Chen, Q.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Cherian, J. G.

J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
[Crossref]

Cho, H.-I.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Christen, H.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

Chumbes, E.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Chung, D. D. L.

D. A. Platts, D. D. L. Chung, and M. S. Dresselhaus, “Far-infrared magnetoreflection studies of graphite intercalated with bromide,” Phys. Rev. B 15, 1087–1092 (1977).
[Crossref]

Contreras, S.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Correia, M. R.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Craford, M.

M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Crassee, I.

N. Ubrig, I. Crassee, J. Levallois, I. O. Nedoliuk, F. Fromm, M. Kaiser, T. Seyller, and A. B. Kuzmenko, “Fabry–Perot enhanced Faraday rotation in graphene,” Opt. Express 21, 24736–24741 (2013).
[Crossref]

I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko, “Multicomponent magneto-optical conductivity of multilayer graphene on SiC,” Phys. Rev. B 84, 035103 (2011).
[Crossref]

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Curtis, J. A.

J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
[Crossref]

Dadgar, A.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Dail, H. W.

J. K. Galt, W. A. Yager, and H. W. Dail, “Cyclotron resonance effects in graphite,” Phys. Rev. 103, 1586–1587 (1956).
[Crossref]

Daniel, B.

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

Danilov, S.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Darakchieva, V.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
[Crossref]

S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
[Crossref]

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
[Crossref]

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
[Crossref]

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Dawson, P.

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

de Heer, W.

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

de Heer, W. A.

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

M. L. Sadowski, G. Martinez, M. Potemski, C. Berger, and W. A. de Heer, “Infrared magnetospectroscopy of two-dimensional electrons in epitaxial graphene,” AIP Conf. Proc. 893, 619–620 (2007).

Dimitrov, R.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Dollase, W.

M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).

Dollase, W. A.

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

Doverspike, K.

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

Dresselhaus, G.

W. W. Toy, M. S. Dresselhaus, and G. Dresselhaus, “Minority carriers in graphite and the H-point magnetoreflection spectra,” Phys. Rev. B 15, 4077–4090 (1977).
[Crossref]

G. Dresselhaus, A. F. Kip, and C. Kittel, “Cyclotron resonance of electrons and holes in silicon and germanium crystals,” Phys. Rev. 98, 368–384 (1955).
[Crossref]

Dresselhaus, M. S.

D. A. Platts, D. D. L. Chung, and M. S. Dresselhaus, “Far-infrared magnetoreflection studies of graphite intercalated with bromide,” Phys. Rev. B 15, 1087–1092 (1977).
[Crossref]

W. W. Toy, M. S. Dresselhaus, and G. Dresselhaus, “Minority carriers in graphite and the H-point magnetoreflection spectra,” Phys. Rev. B 15, 4077–4090 (1977).
[Crossref]

P. R. Schroeder, M. S. Dresselhaus, and A. Javan, “Location of electron and hole carriers in graphite from laser magnetoreflection data,” Phys. Rev. Lett. 20, 1292–1295 (1968).
[Crossref]

Drigo, L.

Drude, P.

P. Drude, “Zur Ionentheorie der Metalle,” Physikal. Z. 1, 161–165 (1900).

P. Drude, “Zur Elektronentheorie der Metalle,” Ann. Phys. 306, 566–613 (1900).
[Crossref]

P. Drude, “Bestimmung der optischen Constanten der Metalle,” Ann. Phys. Chem. 275, 481–554 (1890).
[Crossref]

P. Drude, “Beobachtungen über die Reflexion des Lichtes am Antimonglanz,” Ann. Phys. 270, 489–531 (1888).
[Crossref]

P. Drude, “Üeber die Gesetze der Reflexion und Brechung des Lichtes an der Grenze absorbirender Krystalle,” Ann. Phys. 268, 584–625 (1887).
[Crossref]

Du, R. R.

M. A. Zudov, R. R. Du, J. A. Simmons, and J. L. Reno, “Shubnikov-de Haas-like oscillations in millimeter wave photoconductivity in a high-mobility two-dimensional electron gas,” Phys. Rev. B 64, 201311 (2001).
[Crossref]

Dyakonov, M.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Eastman, L. F.

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Eberhardt, W.

T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]

Eddy, C. R.

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

Einfeldt, S.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
[Crossref]

Ellis, C. T.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

D. K. George, A. V. Stier, C. T. Ellis, B. D. McCombe, J. Černe, and A. G. Markelz, “Terahertz magneto-optical polarization modulation spectroscopy,” J. Opt. Soc. Am. B 29, 1406–1412 (2012).
[Crossref]

Ellrich, F.

Esquinazi, P.

T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]

Fal’ko, V. I.

D. S. L. Abergel and V. I. Fal’ko, “Optical and magneto-optical far-infrared properties of bilayer graphene,” Phys. Rev. B 75, 155430 (2007).
[Crossref]

Fan, H. Y.

W. G. Spitzer and H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882–890 (1957).
[Crossref]

Faugeras, C.

N. A. Goncharuk, L. Nádvorník, C. Faugeras, M. Orlita, and L. Smrčka, “Infrared magnetospectroscopy of graphite in tilted fields,” Phys. Rev. B 86, 155409 (2012).
[Crossref]

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

Faurie, J. P.

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, “Methods for magnetotransport characterization of IR detector materials,” Semicond. Sci. Technol. 8, 805–823 (1993).
[Crossref]

Fiori, G.

B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, “Current saturation and voltage gain in bilayer graphene field effect transistors,” Nano Lett. 12, 1324–1328 (2012).
[Crossref]

Fischer, P.

B. Rheinländer, H. Neumann, P. Fischer, and G. Kühn, “Anisotropic effective masses of electrons in AlAs,” Phys. Stat. Solidi B 49, K167–K169 (1972).
[Crossref]

Fornari, R.

A. Parisini and R. Fornari, “Analysis of the scattering mechanisms controlling electron mobility in β−Ga2O3 crystals,” Semicond. Sci. Technol. 31, 035023 (2016).
[Crossref]

Forsberg, U.

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

Freudenthal, J.

Fritsch, M.

Fromm, F.

Fujiwara, H.

H. Fujiwara, Spectroscopic Ellipsometry (Wiley, 2007).

Galt, J. K.

J. K. Galt, W. A. Yager, and H. W. Dail, “Cyclotron resonance effects in graphite,” Phys. Rev. 103, 1586–1587 (1956).
[Crossref]

Ganicheva, S.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Gaskill, D. K.

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

Geim, A.

A. Geim and K. Novoselov, “The rise of graphene,” Nat. Mater. 6, 183–191 (2007).
[Crossref]

George, D. K.

George, S.

Gerrard, A.

A. Gerrard and J. Burch, Introduction to Matrix Methods in Optics, Dover Books on Physics (Dover, 1994).

Gervais, F.

F. Gervais and B. Piriou, “Anharmonicity in several-polar-mode crystals: adjusting phonon self-energy of LO and TO modes in Al2O3 and TiO2 to fit infrared reflectivity,” J. Phys. C 7, 2374–2386 (1974).

Gogova, D.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

Goiran, M.

D. Molter, F. Ellrich, T. Weinland, S. George, M. Goiran, F. Keilmann, R. Beigang, and J. Lèotin, “High-speed terahertz time-domain spectroscopy of cyclotron resonance in pulsed magnetic field,” Opt. Express 18, 26163–26168 (2010).
[Crossref]

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Golding, T.

W. Xu, L. Wood, and T. Golding, “Optical degeneracies in anisotropic layered media: Treatment of singularities in a 4 × 4 matrix formalism,” Phys. Rev. B 61, 1740–1743 (2000).
[Crossref]

Goldstein, D.

D. Goldstein, Polarized Light, 3rd ed. (CRC Press, 2011).

Golub, L.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Goncharuk, N. A.

N. A. Goncharuk, L. Nádvorník, C. Faugeras, M. Orlita, and L. Smrčka, “Infrared magnetospectroscopy of graphite in tilted fields,” Phys. Rev. B 86, 155409 (2012).
[Crossref]

Goto, K.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

Gottschalch, V.

T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert, “Optical Hall effect studies on modulation-doped AlxGa1−xAs:Si/GaAs quantum wells,” Phys. Stat. Solidi C 5, 1386–1390 (2008).
[Crossref]

T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch, “Electron effective mass and phonon modes in GaAs incorporating Boron and Indium,” Appl. Phys. Lett. 90, 182110 (2007).
[Crossref]

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

T. Hofmann, V. Gottschalch, and M. Schubert, “Far-infrared dielectric anisotropy and phonon modes in spontaneously CuPt-ordered Ga0.52In0.48P,” Phys. Rev. B 66, 195204 (2002).

Graham, D. M.

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

Grandjean, N.

Green, B.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Grill, R.

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

Grill, W.

T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).

Grimm, H.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Groover, M.

M. Groover, Automation, Production Systems, and Computer-Integrated Manufacturing (Prentice-Hall, 2007).

Grundmann, M.

T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).

Guiney, I.

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

Gumbs, G.

O. L. Berman, G. Gumbs, and Y. E. Lozovik, “Magnetoplasmons in layered graphene structures,” Phys. Rev. B 78, 085401 (2008).
[Crossref]

Haas, G.

Hall, E. H.

E. H. Hall, “On a new action of the magnet on electric currents,” Amer. J. Math. 2, 287–292 (1879).
[Crossref]

Hangyo, M.

T. Nagashima, M. Tani, and M. Hangyo, “Polarization-sensitive THz-TDS and its application to anisotropy sensing,” J. Infrared Millim. Terahertz Waves 34, 740–775 (2013).
[Crossref]

K. Yatsugi, N. Matsumoto, T. Nagashima, and M. Hangyo, “Transport properties of free carriers in semiconductors studied by terahertz time domain magneto-optical ellipsometry,” Appl. Phys. Lett. 98, 212108 (2011).
[Crossref]

H. Sumikura, T. Nagashima, H. Kitahara, and M. Hangyo, “Development of a cryogen-free terahertz time-domain magnetooptical measurement system,” Jpn. J. Appl. Phys. 46, 1739–1744 (2007).
[Crossref]

O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, “Faraday ellipticity and Faraday rotation of a doped-silicon wafer studied by terahertz time-domain spectroscopy,” J. Appl. Phys. 100, 033105 (2006).
[Crossref]

O. Morikawa, M. Tonouchi, and M. Hangyo, “A cross-correlation spectroscopy in subterahertz region using an incoherent light source,” Appl. Phys. Lett. 76, 1519–1521 (2000).
[Crossref]

O. Morikawa, M. Tonouchi, and M. Hangyo, “Sub-THz spectroscopic system using a multimode laser diode and photoconductive antenna,” Appl. Phys. Lett. 75, 3772–3774 (1999).
[Crossref]

Harbers, G.

M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Hartstein, A.

R. F. Wallis, J. J. Brion, E. Burstein, and A. Hartstein, “Theory of surface polaritons in anisotropic dielectric media with application to surface magnetoplasmons in semiconductors,” Phys. Rev. B 9, 3424–3437 (1974).
[Crossref]

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Interaction of surface magnetoplasmons and surface optical phonons in polar semiconductors,” Surf. Sci. 34, 73–80 (1973).
[Crossref]

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Theory of magnetoplasmons in semiconductors,” Phys. Rev. Lett. 28, 1455–1458 (1972).
[Crossref]

Hatke, A. T.

J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
[Crossref]

Hauge, P. S.

Hecht, E.

E. Hecht, Optics (Addison-Wesley, 1987).

Heer, W. A. D.

M. L. Sadowski, G. Martynez, M. Potemski, C. Berger, and W. A. D. Heer, “Magneto-spectroscopy of epitaxial graphene,” Int. J. Mod. Phys. B 21, 1145–1154 (2007).
[Crossref]

Hensel, J. C.

K. Suzuki and J. C. Hensel, “Quantum resonances in the valence bands of germanium,” Phys. Rev. B 9, 4184–4218 (1974).
[Crossref]

Herzinger, C. M.

S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
[Crossref]

P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
[Crossref]

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).

T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]

T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
[Crossref]

T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

M. Schubert, T. Hofmann, and C. M. Herzinger, “Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures,” Thin Solid Films 455–456, 563–570 (2004).
[Crossref]

M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).

T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).

T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
[Crossref]

M. Schubert, T. Hofmann, and C. M. Herzinger, “Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs,” J. Opt. Soc. Am. A 20, 347–356 (2003).
[Crossref]

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

T. Hofmann, M. Schubert, and C. M. Herzinger, “Far-infrared magneto-optic generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Proc. SPIE 4779, 90–97 (2002).
[Crossref]

M. Schubert, B. Rheinländer, J. A. Woollam, B. Johs, and C. M. Herzinger, “Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2,” J. Opt. Soc. Am. A 13, 875–883 (1996).
[Crossref]

Hetterich, M.

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

Hibberd, M. T.

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

Higashiwaki, M.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Stat. Solidi A 211, 21–26 (2014).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “MBE grown Ga2O3 and its power device applications,” J. Cryst. Growth 378, 591–595 (2013).
[Crossref]

Hill, V. G.

R. Roy, V. G. Hill, and E. F. Osborn, “Polymorphism of Ga2O3 and the system Ga2O3,” J. Am. Chem. Soc. 74, 719–722 (1952).
[Crossref]

Hilton, D. J.

Hindley, N.

N. Hindley, “Cyclotron resonance and the free-carrier magneto-optical properties of a semiconductor,” Phys. Stat. Solidi B 7, 67–80 (1964).
[Crossref]

Hodgkinson, I. J.

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

Hoffman, C. A.

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, “Methods for magnetotransport characterization of IR detector materials,” Semicond. Sci. Technol. 8, 805–823 (1993).
[Crossref]

Hofmann, T.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
[Crossref]

P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
[Crossref]

S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
[Crossref]

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).

T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]

T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert, “Optical Hall effect studies on modulation-doped AlxGa1−xAs:Si/GaAs quantum wells,” Phys. Stat. Solidi C 5, 1386–1390 (2008).
[Crossref]

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
[Crossref]

T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
[Crossref]

T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch, “Electron effective mass and phonon modes in GaAs incorporating Boron and Indium,” Appl. Phys. Lett. 90, 182110 (2007).
[Crossref]

T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
[Crossref]

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

M. Schubert, T. Hofmann, and C. M. Herzinger, “Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures,” Thin Solid Films 455–456, 563–570 (2004).
[Crossref]

M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).

T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).

T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
[Crossref]

M. Schubert, T. Hofmann, and C. M. Herzinger, “Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs,” J. Opt. Soc. Am. A 20, 347–356 (2003).
[Crossref]

T. Hofmann, M. Schubert, and C. M. Herzinger, “Far-infrared magneto-optic generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Proc. SPIE 4779, 90–97 (2002).
[Crossref]

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

T. Hofmann, V. Gottschalch, and M. Schubert, “Far-infrared dielectric anisotropy and phonon modes in spontaneously CuPt-ordered Ga0.52In0.48P,” Phys. Rev. B 66, 195204 (2002).

T. Hofmann, “Far-infrared spectroscopic ellipsometry on semiconductor heterostructures,” Ph.D. thesis (University of Leipzig, 2004).

Hommel, D.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
[Crossref]

Huant, S.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Humphreys, C. J.

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

Hunn, J. D.

Ibbetson, J.

Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]

Ikebe, Y.

Y. Ikebe, T. Morimoto, R. Masutomi, T. Okamoto, H. Aoki, and R. Shimano, “Optical Hall effect in the integer quantum Hall regime,” Phys. Rev. Lett. 104, 256802 (2010).
[Crossref]

Y. Ikebe and R. Shimano, “Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect,” Appl. Phys. Lett. 92, 012111 (2008).
[Crossref]

Ikedo, T.

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

Iniewski, K.

L. T. Berger and K. Iniewski, Smart Grid Applications, Communications, and Security (Wiley, 2012).

Ino, Y.

Y. Ino, R. Shimano, Y. Svirko, and M. Kuwata-Gonokami, “Terahertz time domain magneto-optical ellipsometry in reflection geometry,” Phys. Rev. B 70, 155101 (2004).
[Crossref]

R. Shimano, Y. Ino, Y. P. Svirko, and M. Kuwata-Gonokami, “Terahertz frequency Hall measurement by magneto-optical Kerr spectroscopy in InAs,” Appl. Phys. Lett. 81, 199–201 (2002).
[Crossref]

Ivchenko, E.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Janzén, E.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

Järrendahl, K.

K. Järrendahl and B. Kahr, “Hans Mueller (1900-1965),” Woollam Annual Newsletter 2011(11), 8–9 (2011).

Javan, A.

P. R. Schroeder, M. S. Dresselhaus, and A. Javan, “Location of electron and hole carriers in graphite from laser magnetoreflection data,” Phys. Rev. Lett. 20, 1292–1295 (1968).
[Crossref]

Jellison, G. E.

Jin, Z.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Johs, B.

Jones, R. C.

Kahr, B.

Kaiser, M.

Kakanakova-Georgieva, A.

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

Kampfrat, T.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Kaplan, R.

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

Kapolnek, D.

Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]

Karaiskaj, D.

J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
[Crossref]

Kasic, A.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
[Crossref]

Keilmann, F.

Keller, B.

Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]

Khan, M. A.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Kim, H.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Kim, M.-H.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

Kim, S.-W.

B. Kumara and S.-W. Kim, “Recent advances in power generation through piezoelectric nanogenerators,” J. Mater. Chem. 21, 18946–18958 (2011).
[Crossref]

Kip, A. F.

G. Dresselhaus, A. F. Kip, and C. Kittel, “Cyclotron resonance of electrons and holes in silicon and germanium crystals,” Phys. Rev. 98, 368–384 (1955).
[Crossref]

Kirzhner, T.

Y. Lubashevsky, L. Pan, T. Kirzhner, G. Koren, and N. Armitage, “Optical birefringence and dichroism of cuprate superconductors in the THz regime,” Phys. Rev. Lett. 112, 147001 (2014).
[Crossref]

Kitahara, H.

H. Sumikura, T. Nagashima, H. Kitahara, and M. Hangyo, “Development of a cryogen-free terahertz time-domain magnetooptical measurement system,” Jpn. J. Appl. Phys. 46, 1739–1744 (2007).
[Crossref]

Kittel, C.

G. Dresselhaus, A. F. Kip, and C. Kittel, “Cyclotron resonance of electrons and holes in silicon and germanium crystals,” Phys. Rev. 98, 368–384 (1955).
[Crossref]

C. Kittel, Introduction to Solid State Physics (Wiley, 2009).

Kläui, M.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Kleber, W.

W. Kleber and H.-J. Bautsch, Einführung in die Kristallographie (de Gruyter, 2010).

Klingshirn, C.

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

C. Klingshirn, Semiconductor Optics (Springer-Verlag, 1995).

Knap, W.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Knight, S.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
[Crossref]

Köhler, U.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Koirala, N.

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

Kono, J.

Kontani, H.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

Koren, G.

Y. Lubashevsky, L. Pan, T. Kirzhner, G. Koren, and N. Armitage, “Optical birefringence and dichroism of cuprate superconductors in the THz regime,” Phys. Rev. Lett. 112, 147001 (2014).
[Crossref]

Korlacki, R.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

Koshino, M.

T. Morimoto, M. Koshino, and H. Aoki, “Faraday rotation in bilayer and trilayer graphene in the quantum Hall regime,” Phys. Rev. B 86, 155426 (2012).
[Crossref]

M. Koshino and T. Ando, “Magneto-optical properties of multilayer graphene,” Phys. Rev. B 77, 115313 (2008).
[Crossref]

Krahmer, C.

T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
[Crossref]

Krames, M.

M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Krost, A.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Kuhn, B.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Kühn, G.

B. Rheinländer, H. Neumann, P. Fischer, and G. Kühn, “Anisotropic effective masses of electrons in AlAs,” Phys. Stat. Solidi B 49, K167–K169 (1972).
[Crossref]

Kühne, P.

S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
[Crossref]

P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
[Crossref]

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

Kühne, P. J. C.

P. J. C. Kühne, “The optical Hall effect in three- and two-dimensional materials,” Ph.D. dissertation (University of Nebraska, 2014).

Kumagai, Y.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

Kumara, B.

B. Kumara and S.-W. Kim, “Recent advances in power generation through piezoelectric nanogenerators,” J. Mater. Chem. 21, 18946–18958 (2011).
[Crossref]

Kuramata, A.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Stat. Solidi A 211, 21–26 (2014).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “MBE grown Ga2O3 and its power device applications,” J. Cryst. Growth 378, 591–595 (2013).
[Crossref]

Kurz, H.

B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, “Current saturation and voltage gain in bilayer graphene field effect transistors,” Nano Lett. 12, 1324–1328 (2012).
[Crossref]

Kuwata-Gonokami, M.

Y. Ino, R. Shimano, Y. Svirko, and M. Kuwata-Gonokami, “Terahertz time domain magneto-optical ellipsometry in reflection geometry,” Phys. Rev. B 70, 155101 (2004).
[Crossref]

R. Shimano, Y. Ino, Y. P. Svirko, and M. Kuwata-Gonokami, “Terahertz frequency Hall measurement by magneto-optical Kerr spectroscopy in InAs,” Appl. Phys. Lett. 81, 199–201 (2002).
[Crossref]

Kuzmenko, A. B.

N. Ubrig, I. Crassee, J. Levallois, I. O. Nedoliuk, F. Fromm, M. Kaiser, T. Seyller, and A. B. Kuzmenko, “Fabry–Perot enhanced Faraday rotation in graphene,” Opt. Express 21, 24736–24741 (2013).
[Crossref]

I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko, “Multicomponent magneto-optical conductivity of multilayer graphene on SiC,” Phys. Rev. B 84, 035103 (2011).
[Crossref]

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Kvon, Z.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Lakhtakia, A.

W. S. Weiglhofer and A. Lakhtakia, Introduction to Complex Mediums for Optics and Electromagnetics (SPIE, 2003).

Landau, L.

L. Landau, “Diamagnetismus der Metalle,” Z. Phys. 64, 629–637 (1930).

L. Landau and E. Lifšic, Elektrodynamik der Kontinua, Lehrbuch der theoretischen Physik (Akademie Verlag, 1990).

Lax, B.

G. B. Wright and B. Lax, “Magnetoreflection experiments in intermetallics,” J. Appl. Phys. 32, 2113–2117 (1961).
[Crossref]

Lee, J.-H.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Leibiger, G.

T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch, “Electron effective mass and phonon modes in GaAs incorporating Boron and Indium,” Appl. Phys. Lett. 90, 182110 (2007).
[Crossref]

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

Leotin, J.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Léotin, J.

Lèotin, J.

Levallois, J.

N. Ubrig, I. Crassee, J. Levallois, I. O. Nedoliuk, F. Fromm, M. Kaiser, T. Seyller, and A. B. Kuzmenko, “Fabry–Perot enhanced Faraday rotation in graphene,” Opt. Express 21, 24736–24741 (2013).
[Crossref]

I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko, “Multicomponent magneto-optical conductivity of multilayer graphene on SiC,” Phys. Rev. B 84, 035103 (2011).
[Crossref]

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Lifšic, E.

L. Landau and E. Lifšic, Elektrodynamik der Kontinua, Lehrbuch der theoretischen Physik (Akademie Verlag, 1990).

Lindsay, A.

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

Lloyd-Hughes, J.

J. Lloyd-Hughes, “Terahertz spectroscopy of quantum 2D electron systems,” J. Phys. D 47, 374006 (2014).
[Crossref]

Lozovik, Y. E.

O. L. Berman, G. Gumbs, and Y. E. Lozovik, “Magnetoplasmons in layered graphene structures,” Phys. Rev. B 78, 085401 (2008).
[Crossref]

Lu, H.

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
[Crossref]

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
[Crossref]

Lubashevsky, Y.

Y. Lubashevsky, L. Pan, T. Kirzhner, G. Koren, and N. Armitage, “Optical birefringence and dichroism of cuprate superconductors in the THz regime,” Phys. Rev. Lett. 112, 147001 (2014).
[Crossref]

Mandrus, D.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

Markelz, A. G.

Martinez, G.

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

M. L. Sadowski, G. Martinez, M. Potemski, C. Berger, and W. A. de Heer, “Infrared magnetospectroscopy of two-dimensional electrons in epitaxial graphene,” AIP Conf. Proc. 893, 619–620 (2007).

Martynez, G.

M. L. Sadowski, G. Martynez, M. Potemski, C. Berger, and W. A. D. Heer, “Magneto-spectroscopy of epitaxial graphene,” Int. J. Mod. Phys. B 21, 1145–1154 (2007).
[Crossref]

Masui, T.

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Stat. Solidi A 211, 21–26 (2014).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “MBE grown Ga2O3 and its power device applications,” J. Cryst. Growth 378, 591–595 (2013).
[Crossref]

Masutomi, R.

Y. Ikebe, T. Morimoto, R. Masutomi, T. Okamoto, H. Aoki, and R. Shimano, “Optical Hall effect in the integer quantum Hall regime,” Phys. Rev. Lett. 104, 256802 (2010).
[Crossref]

Matsumoto, N.

K. Yatsugi, N. Matsumoto, T. Nagashima, and M. Hangyo, “Transport properties of free carriers in semiconductors studied by terahertz time domain magneto-optical ellipsometry,” Appl. Phys. Lett. 98, 212108 (2011).
[Crossref]

Maude, D.

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

Maude, D. K.

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

McCombe, B. D.

McGill, S. A.

J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
[Crossref]

Meyer, J. R.

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, “Methods for magnetotransport characterization of IR detector materials,” Semicond. Sci. Technol. 8, 805–823 (1993).
[Crossref]

Mishra, U. K.

Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]

Mittleman, D. M.

Miura, N.

N. Miura, Physics of Semiconductors in High Magnetic Fields (University, 2008).

Mlynski, D. A.

Modine, F.

Modine, F. A.

Molter, D.

Monemar, B.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
[Crossref]

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Moore, G. E.

G. E. Moore, “Cramming more components onto integrated circuits,” Proc. IEEE 86, 82–85 (1998).

Morikawa, O.

O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, “Faraday ellipticity and Faraday rotation of a doped-silicon wafer studied by terahertz time-domain spectroscopy,” J. Appl. Phys. 100, 033105 (2006).
[Crossref]

O. Morikawa, M. Tonouchi, and M. Hangyo, “A cross-correlation spectroscopy in subterahertz region using an incoherent light source,” Appl. Phys. Lett. 76, 1519–1521 (2000).
[Crossref]

O. Morikawa, M. Tonouchi, and M. Hangyo, “Sub-THz spectroscopic system using a multimode laser diode and photoconductive antenna,” Appl. Phys. Lett. 75, 3772–3774 (1999).
[Crossref]

Morimoto, T.

T. Morimoto, M. Koshino, and H. Aoki, “Faraday rotation in bilayer and trilayer graphene in the quantum Hall regime,” Phys. Rev. B 86, 155426 (2012).
[Crossref]

Y. Ikebe, T. Morimoto, R. Masutomi, T. Okamoto, H. Aoki, and R. Shimano, “Optical Hall effect in the integer quantum Hall regime,” Phys. Rev. Lett. 104, 256802 (2010).
[Crossref]

Morris, C.

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

Morris, C. M.

Mueller, G. O.

M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Mueller, H.

H. Mueller, “The foundation of optics (in the Proceedings of the Winter Meeting of the Optical Society of Americas, p. 660),” J. Opt. Soc. Am. 38, 657–670 (1948).

H. Mueller, “Memorandum on the polarization optics of the photoelastic shutter,” Report of the OSRD project (Massachusetts Institute of Technology, 1943).

Mueller-Mach, R.

M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Mukherjee, A.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

Muller, R. H.

R. H. Muller, “Definitions and conventions in ellipsometry,” Surf. Sci. 16, 14–33 (1969).
[Crossref]

Murakami, H.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

Murphy, M.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Myers-Ward, R. L.

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

Nádvorník, L.

N. A. Goncharuk, L. Nádvorník, C. Faugeras, M. Orlita, and L. Smrčka, “Infrared magnetospectroscopy of graphite in tilted fields,” Phys. Rev. B 86, 155409 (2012).
[Crossref]

Nagashima, T.

T. Nagashima, M. Tani, and M. Hangyo, “Polarization-sensitive THz-TDS and its application to anisotropy sensing,” J. Infrared Millim. Terahertz Waves 34, 740–775 (2013).
[Crossref]

K. Yatsugi, N. Matsumoto, T. Nagashima, and M. Hangyo, “Transport properties of free carriers in semiconductors studied by terahertz time domain magneto-optical ellipsometry,” Appl. Phys. Lett. 98, 212108 (2011).
[Crossref]

H. Sumikura, T. Nagashima, H. Kitahara, and M. Hangyo, “Development of a cryogen-free terahertz time-domain magnetooptical measurement system,” Jpn. J. Appl. Phys. 46, 1739–1744 (2007).
[Crossref]

O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, “Faraday ellipticity and Faraday rotation of a doped-silicon wafer studied by terahertz time-domain spectroscopy,” J. Appl. Phys. 100, 033105 (2006).
[Crossref]

Nanishi, Y.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Nashima, S.

O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, “Faraday ellipticity and Faraday rotation of a doped-silicon wafer studied by terahertz time-domain spectroscopy,” J. Appl. Phys. 100, 033105 (2006).
[Crossref]

Nedoliuk, I. O.

Neshat, M.

Neugebauer, P.

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

Neumaier, D.

B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, “Current saturation and voltage gain in bilayer graphene field effect transistors,” Nano Lett. 12, 1324–1328 (2012).
[Crossref]

Neumann, H.

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

B. Rheinländer, H. Neumann, P. Fischer, and G. Kühn, “Anisotropic effective masses of electrons in AlAs,” Phys. Stat. Solidi B 49, K167–K169 (1972).
[Crossref]

B. Rheinländer and H. Neumann, “Faraday rotation in n-type AlAs,” Phys. Stat. Solidi B 45, K9–K13 (1971).
[Crossref]

Ng, H. K.

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

Nilsson, D.

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

Novoselov, K.

A. Geim and K. Novoselov, “The rise of graphene,” Nat. Mater. 6, 183–191 (2007).
[Crossref]

Nozières, P.

P. Nozières, “Cyclotron resonance in graphite,” Phys. Rev. 109, 1510–1521 (1958).
[Crossref]

Nurmikko, A.

D. Some and A. Nurmikko, “Real-time electron cyclotron oscillations observed by terahertz techniques in semiconductor heterostructures,” Appl. Phys. Lett. 65, 3377–3379 (1994).
[Crossref]

O’Reilly, E.

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

Off, J.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

Oh, S.

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

Ohkubo, I.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

Okamoto, T.

Y. Ikebe, T. Morimoto, R. Masutomi, T. Okamoto, H. Aoki, and R. Shimano, “Optical Hall effect in the integer quantum Hall regime,” Phys. Rev. Lett. 104, 256802 (2010).
[Crossref]

Orlita, M.

N. A. Goncharuk, L. Nádvorník, C. Faugeras, M. Orlita, and L. Smrčka, “Infrared magnetospectroscopy of graphite in tilted fields,” Phys. Rev. B 86, 155409 (2012).
[Crossref]

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

Osborn, E. F.

R. Roy, V. G. Hill, and E. F. Osborn, “Polymorphism of Ga2O3 and the system Ga2O3,” J. Am. Chem. Soc. 74, 719–722 (1952).
[Crossref]

Ostler, M.

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Palik, E. D.

E. D. Palik, S. Teitler, and R. F. Wallis, “Free carrier cyclotron resonance, Faraday rotation, and Voigt double refraction in compound semiconductors,” J. Appl. Phys. 32, 2132–2136 (1961).
[Crossref]

Pan, L.

Y. Lubashevsky, L. Pan, T. Kirzhner, G. Koren, and N. Armitage, “Optical birefringence and dichroism of cuprate superconductors in the THz regime,” Phys. Rev. Lett. 112, 147001 (2014).
[Crossref]

Parikh, P.

Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]

Parisini, A.

A. Parisini and R. Fornari, “Analysis of the scattering mechanisms controlling electron mobility in β−Ga2O3 crystals,” Semicond. Sci. Technol. 31, 035023 (2016).
[Crossref]

Pascual, E.

Pereira, S.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Pidgeon, C.

C. Pidgeon, “Free carrier optical properties of semiconductors,” in Handbook on Semiconductors, M. Balkanski, ed. (North-Holland, 1980).

Pietzonka, I.

T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
[Crossref]

Piriou, B.

F. Gervais and B. Piriou, “Anharmonicity in several-polar-mode crystals: adjusting phonon self-energy of LO and TO modes in Al2O3 and TiO2 to fit infrared reflectivity,” J. Phys. C 7, 2374–2386 (1974).

Platts, D. A.

D. A. Platts, D. D. L. Chung, and M. S. Dresselhaus, “Far-infrared magnetoreflection studies of graphite intercalated with bromide,” Phys. Rev. B 15, 1087–1092 (1977).
[Crossref]

Plochocka, P.

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

Potemski, M.

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

M. L. Sadowski, G. Martynez, M. Potemski, C. Berger, and W. A. D. Heer, “Magneto-spectroscopy of epitaxial graphene,” Int. J. Mod. Phys. B 21, 1145–1154 (2007).
[Crossref]

M. L. Sadowski, G. Martinez, M. Potemski, C. Berger, and W. A. de Heer, “Infrared magnetospectroscopy of two-dimensional electrons in epitaxial graphene,” AIP Conf. Proc. 893, 619–620 (2007).

Prettl, W.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Prunty, T.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Quema, A.

O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, “Faraday ellipticity and Faraday rotation of a doped-silicon wafer studied by terahertz time-domain spectroscopy,” J. Appl. Phys. 100, 033105 (2006).
[Crossref]

Rein, L.

Reno, J. L.

J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
[Crossref]

X. Wang, D. J. Hilton, J. L. Reno, D. M. Mittleman, and J. Kono, “Direct measurement of cyclotron coherence times of high-mobility two-dimensional electron gases,” Opt. Express 18, 12354–12361 (2010).
[Crossref]

X. Wang, D. J. Hilton, L. Rein, D. M. Mittleman, J. Kono, and J. L. Reno, “Coherent THz cyclotron oscillations in a two-dimensional electron gas,” Opt. Lett. 32, 1845–1847 (2007).
[Crossref]

M. A. Zudov, R. R. Du, J. A. Simmons, and J. L. Reno, “Shubnikov-de Haas-like oscillations in millimeter wave photoconductivity in a high-mobility two-dimensional electron gas,” Phys. Rev. B 64, 201311 (2001).
[Crossref]

Rheinländer, B.

M. Schubert, B. Rheinländer, J. A. Woollam, B. Johs, and C. M. Herzinger, “Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2,” J. Opt. Soc. Am. A 13, 875–883 (1996).
[Crossref]

B. Rheinländer, H. Neumann, P. Fischer, and G. Kühn, “Anisotropic effective masses of electrons in AlAs,” Phys. Stat. Solidi B 49, K167–K169 (1972).
[Crossref]

B. Rheinländer and H. Neumann, “Faraday rotation in n-type AlAs,” Phys. Stat. Solidi B 45, K9–K13 (1971).
[Crossref]

B. Rheinländer, “Der Einfluss der Energieverteilung der Ladungsträger in Halbleitern auf die Bestimmung ihrer effektiven Masse aus der Infrarot-Plasma-Reflexion,” Phys. Lett. 29A, 420–421 (1969).
[Crossref]

B. Rheinländer, “Infrarot-Faraday-Effekt an Halbleitern,” Master’s thesis (Universität Leipzig, 1965).

Robert, J. L.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Röseler, A.

A. Röseler, Infrared Spectroscopic Ellipsometry (Akademie-Verlag, 1990).

Rotenberg, E.

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Rouleau, C. M.

Roy, R.

R. Roy, V. G. Hill, and E. F. Osborn, “Polymorphism of Ga2O3 and the system Ga2O3,” J. Am. Chem. Soc. 74, 719–722 (1952).
[Crossref]

Sadowski, M. L.

M. L. Sadowski, G. Martinez, M. Potemski, C. Berger, and W. A. de Heer, “Infrared magnetospectroscopy of two-dimensional electrons in epitaxial graphene,” AIP Conf. Proc. 893, 619–620 (2007).

M. L. Sadowski, G. Martynez, M. Potemski, C. Berger, and W. A. D. Heer, “Magneto-spectroscopy of epitaxial graphene,” Int. J. Mod. Phys. B 21, 1145–1154 (2007).
[Crossref]

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Saito, Y.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Sasaki, K.

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Stat. Solidi A 211, 21–26 (2014).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “MBE grown Ga2O3 and its power device applications,” J. Cryst. Growth 378, 591–595 (2013).
[Crossref]

Schade, U.

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]

Schaff, W.

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
[Crossref]

Schaff, W. J.

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
[Crossref]

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Schall, D.

B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, “Current saturation and voltage gain in bilayer graphene field effect transistors,” Nano Lett. 12, 1324–1328 (2012).
[Crossref]

Schmidt, D.

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

Schneider, J.

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

Schöche, S.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
[Crossref]

S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
[Crossref]

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

Scholz, F.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

Schroeder, P. R.

P. R. Schroeder, M. S. Dresselhaus, and A. Javan, “Location of electron and hole carriers in graphite from laser magnetoreflection data,” Phys. Rev. Lett. 20, 1292–1295 (1968).
[Crossref]

Schubert, E.

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

Schubert, M.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
[Crossref]

P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
[Crossref]

S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
[Crossref]

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]

T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
[Crossref]

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
[Crossref]

T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert, “Optical Hall effect studies on modulation-doped AlxGa1−xAs:Si/GaAs quantum wells,” Phys. Stat. Solidi C 5, 1386–1390 (2008).
[Crossref]

T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch, “Electron effective mass and phonon modes in GaAs incorporating Boron and Indium,” Appl. Phys. Lett. 90, 182110 (2007).
[Crossref]

T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
[Crossref]

M. Schubert, “Another century of ellipsometry,” Ann. Phys. 15, 480–497 (2006).
[Crossref]

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

M. Schubert, T. Hofmann, and C. M. Herzinger, “Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures,” Thin Solid Films 455–456, 563–570 (2004).
[Crossref]

M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).

T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).

M. Schubert, T. Hofmann, and C. M. Herzinger, “Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs,” J. Opt. Soc. Am. A 20, 347–356 (2003).
[Crossref]

T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
[Crossref]

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

T. Hofmann, M. Schubert, and C. M. Herzinger, “Far-infrared magneto-optic generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Proc. SPIE 4779, 90–97 (2002).
[Crossref]

T. Hofmann, V. Gottschalch, and M. Schubert, “Far-infrared dielectric anisotropy and phonon modes in spontaneously CuPt-ordered Ga0.52In0.48P,” Phys. Rev. B 66, 195204 (2002).

A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
[Crossref]

T. E. Tiwald and M. Schubert, “Measurement of rutile TiO2 dielectric tensor from 0.148 to 33 μm using generalized ellipsometry,” Proc. SPIE 4103, 19–29 (2000).
[Crossref]

M. Schubert, B. Rheinländer, J. A. Woollam, B. Johs, and C. M. Herzinger, “Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2,” J. Opt. Soc. Am. A 13, 875–883 (1996).
[Crossref]

M. Schubert, “Polarization-dependent optical parameters of arbitrarily anisotropic homogeneous layered systems,” Phys. Rev. B 53, 4265–4274 (1996).
[Crossref]

M. Schubert, “Generalized ellipsometry,” in Introduction to Complex Mediums for Optics and Electromagnetics, W. S. Weiglhofer and A. Lakhtakia, eds. (SPIE, 2003), pp. 677–710.

M. Schubert, Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons and Polaritons, Vol. 209 of Springer Tracts in Modern Physics (Springer, 2004).

M. Schubert, “Theory and application of generalized ellipsometry,” in Handbook of Ellipsometry, E. Irene and H. Tompkins, eds. (William Andrew, 2004).

Sedrine, N. B.

S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

Seidl, S.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Seyller, T.

N. Ubrig, I. Crassee, J. Levallois, I. O. Nedoliuk, F. Fromm, M. Kaiser, T. Seyller, and A. B. Kuzmenko, “Fabry–Perot enhanced Faraday rotation in graphene,” Opt. Express 21, 24736–24741 (2013).
[Crossref]

I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko, “Multicomponent magneto-optical conductivity of multilayer graphene on SiC,” Phys. Rev. B 84, 035103 (2011).
[Crossref]

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Shchekin, O.

M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Shealy, J.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Shi, J.

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

Shimano, R.

Y. Ikebe, T. Morimoto, R. Masutomi, T. Okamoto, H. Aoki, and R. Shimano, “Optical Hall effect in the integer quantum Hall regime,” Phys. Rev. Lett. 104, 256802 (2010).
[Crossref]

Y. Ikebe and R. Shimano, “Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect,” Appl. Phys. Lett. 92, 012111 (2008).
[Crossref]

Y. Ino, R. Shimano, Y. Svirko, and M. Kuwata-Gonokami, “Terahertz time domain magneto-optical ellipsometry in reflection geometry,” Phys. Rev. B 70, 155101 (2004).
[Crossref]

R. Shimano, Y. Ino, Y. P. Svirko, and M. Kuwata-Gonokami, “Terahertz frequency Hall measurement by magneto-optical Kerr spectroscopy in InAs,” Appl. Phys. Lett. 81, 199–201 (2002).
[Crossref]

Shur, M. S.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Simmons, J. A.

M. A. Zudov, R. R. Du, J. A. Simmons, and J. L. Reno, “Shubnikov-de Haas-like oscillations in millimeter wave photoconductivity in a high-mobility two-dimensional electron gas,” Phys. Rev. B 64, 201311 (2001).
[Crossref]

Sivananthan, S.

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, “Methods for magnetotransport characterization of IR detector materials,” Semicond. Sci. Technol. 8, 805–823 (1993).
[Crossref]

Skierbiszewski, C.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Skomski, R.

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

Smart, J.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Smith, W. F.

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

Smrcka, L.

N. A. Goncharuk, L. Nádvorník, C. Faugeras, M. Orlita, and L. Smrčka, “Infrared magnetospectroscopy of graphite in tilted fields,” Phys. Rev. B 86, 155409 (2012).
[Crossref]

Some, D.

D. Some and A. Nurmikko, “Real-time electron cyclotron oscillations observed by terahertz techniques in semiconductor heterostructures,” Appl. Phys. Lett. 65, 3377–3379 (1994).
[Crossref]

Spencer, B. F.

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

Spetter, V.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Spitzer, W. G.

W. G. Spitzer and H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882–890 (1957).
[Crossref]

Sprinkle, M.

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

Stier, A. V.

Streubel, K.

T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
[Crossref]

Strupinski, W.

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

Sumikura, H.

H. Sumikura, T. Nagashima, H. Kitahara, and M. Hangyo, “Development of a cryogen-free terahertz time-domain magnetooptical measurement system,” Jpn. J. Appl. Phys. 46, 1739–1744 (2007).
[Crossref]

O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, “Faraday ellipticity and Faraday rotation of a doped-silicon wafer studied by terahertz time-domain spectroscopy,” J. Appl. Phys. 100, 033105 (2006).
[Crossref]

Suzuki, K.

K. Suzuki and J. C. Hensel, “Quantum resonances in the valence bands of germanium,” Phys. Rev. B 9, 4184–4218 (1974).
[Crossref]

Svirko, Y.

Y. Ino, R. Shimano, Y. Svirko, and M. Kuwata-Gonokami, “Terahertz time domain magneto-optical ellipsometry in reflection geometry,” Phys. Rev. B 70, 155101 (2004).
[Crossref]

Svirko, Y. P.

R. Shimano, Y. Ino, Y. P. Svirko, and M. Kuwata-Gonokami, “Terahertz frequency Hall measurement by magneto-optical Kerr spectroscopy in InAs,” Appl. Phys. Lett. 81, 199–201 (2002).
[Crossref]

Szafranek, B. N.

B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, “Current saturation and voltage gain in bilayer graphene field effect transistors,” Nano Lett. 12, 1324–1328 (2012).
[Crossref]

Tanaka, T.

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

Tani, M.

T. Nagashima, M. Tani, and M. Hangyo, “Polarization-sensitive THz-TDS and its application to anisotropy sensing,” J. Infrared Millim. Terahertz Waves 34, 740–775 (2013).
[Crossref]

Tedesco, J. D.

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

Tedesco, J. L.

T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

Teitler, S.

E. D. Palik, S. Teitler, and R. F. Wallis, “Free carrier cyclotron resonance, Faraday rotation, and Voigt double refraction in compound semiconductors,” J. Appl. Phys. 32, 2132–2136 (1961).
[Crossref]

Thieu, Q.-T.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

Thomas, A.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Tilak, V.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Tippins, H. H.

H. H. Tippins, “Optical absorption and photoconductivity in the band edge of β−Ga2O3,” Phys. Rev. 140A, A316–A319 (1965).
[Crossref]

Tiwald, T. E.

T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]

T. E. Tiwald and M. Schubert, “Measurement of rutile TiO2 dielectric tensor from 0.148 to 33 μm using generalized ellipsometry,” Proc. SPIE 4103, 19–29 (2000).
[Crossref]

A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
[Crossref]

Tkach, A.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Togashi, R.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

Tokumoto, T.

J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
[Crossref]

Tonouchi, M.

M. Tonouchi, “Cutting-edge terahertz technology,” Nat. Photonics 1, 97–105 (2007).
[Crossref]

O. Morikawa, M. Tonouchi, and M. Hangyo, “A cross-correlation spectroscopy in subterahertz region using an incoherent light source,” Appl. Phys. Lett. 76, 1519–1521 (2000).
[Crossref]

O. Morikawa, M. Tonouchi, and M. Hangyo, “Sub-THz spectroscopic system using a multimode laser diode and photoconductive antenna,” Appl. Phys. Lett. 75, 3772–3774 (1999).
[Crossref]

Torosyan, G.

Toy, W. W.

W. W. Toy, M. S. Dresselhaus, and G. Dresselhaus, “Minority carriers in graphite and the H-point magnetoreflection spectra,” Phys. Rev. B 15, 4077–4090 (1977).
[Crossref]

Tse, W.-K.

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

Turchinovich, D.

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Ubrig, N.

Unterwald, F. C.

D. W. Berreman and F. C. Unterwald, “Adjusting poles and zeros of dielectric dispersion to fit reststrahlen of PrCl3 and LaCl3,” Phys. Rev. 174, 791–799 (1968).
[Crossref]

van der Marel, D.

I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko, “Multicomponent magneto-optical conductivity of multilayer graphene on SiC,” Phys. Rev. B 84, 035103 (2011).
[Crossref]

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Vernon, R. J.

M. E. Brodwin and R. J. Vernon, “Free-carrier magneto-microwave Kerr effect in semiconductors,” Phys. Rev. 140, A1390–A1400 (1965).
[Crossref]

von Middendorff, C.

T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert, “Optical Hall effect studies on modulation-doped AlxGa1−xAs:Si/GaAs quantum wells,” Phys. Stat. Solidi C 5, 1386–1390 (2008).
[Crossref]

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

Wager, J. F.

J. F. Wager, “Transparent electronics,” Science 300, 1245–1246 (2003).
[Crossref]

Wagner, G.

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

Wallis, R. F.

R. F. Wallis, J. J. Brion, E. Burstein, and A. Hartstein, “Theory of surface polaritons in anisotropic dielectric media with application to surface magnetoplasmons in semiconductors,” Phys. Rev. B 9, 3424–3437 (1974).
[Crossref]

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Interaction of surface magnetoplasmons and surface optical phonons in polar semiconductors,” Surf. Sci. 34, 73–80 (1973).
[Crossref]

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Theory of magnetoplasmons in semiconductors,” Phys. Rev. Lett. 28, 1455–1458 (1972).
[Crossref]

E. D. Palik, S. Teitler, and R. F. Wallis, “Free carrier cyclotron resonance, Faraday rotation, and Voigt double refraction in compound semiconductors,” J. Appl. Phys. 32, 2132–2136 (1961).
[Crossref]

Walter, A. L.

I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko, “Multicomponent magneto-optical conductivity of multilayer graphene on SiC,” Phys. Rev. B 84, 035103 (2011).
[Crossref]

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Wang, B.

Wang, X.

Wang, Y. J.

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

Weber, W.

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Weiglhofer, W. S.

W. S. Weiglhofer and A. Lakhtakia, Introduction to Complex Mediums for Optics and Electromagnetics (SPIE, 2003).

Weimann, N.

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Weinland, T.

Wöhler, H.

Wood, L.

W. Xu, L. Wood, and T. Golding, “Optical degeneracies in anisotropic layered media: Treatment of singularities in a 4 × 4 matrix formalism,” Phys. Rev. B 61, 1740–1743 (2000).
[Crossref]

Woollam, J. A.

P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
[Crossref]

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]

M. Schubert, B. Rheinländer, J. A. Woollam, B. Johs, and C. M. Herzinger, “Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2,” J. Opt. Soc. Am. A 13, 875–883 (1996).
[Crossref]

Wright, G. B.

G. B. Wright and B. Lax, “Magnetoreflection experiments in intermetallics,” J. Appl. Phys. 32, 2113–2117 (1961).
[Crossref]

Wu, L.

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

Wu, Y.-F.

Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]

Wysmolek, A.

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

Xu, W.

W. Xu, L. Wood, and T. Golding, “Optical degeneracies in anisotropic layered media: Treatment of singularities in a 4 × 4 matrix formalism,” Phys. Rev. B 61, 1740–1743 (2000).
[Crossref]

Yager, W. A.

J. K. Galt, W. A. Yager, and H. W. Dail, “Cyclotron resonance effects in graphite,” Phys. Rev. 103, 1586–1587 (1956).
[Crossref]

Yakimova, R.

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

Yamakoshi, S.

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Stat. Solidi A 211, 21–26 (2014).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “MBE grown Ga2O3 and its power device applications,” J. Cryst. Growth 378, 591–595 (2013).
[Crossref]

Yang, F. H.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Yang, J.

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

Yatsugi, K.

K. Yatsugi, N. Matsumoto, T. Nagashima, and M. Hangyo, “Transport properties of free carriers in semiconductors studied by terahertz time domain magneto-optical ellipsometry,” Appl. Phys. Lett. 98, 212108 (2011).
[Crossref]

Yoshikawa, A.

S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
[Crossref]

Yu, P.

P. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, 1999).

Zhou, L.

M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

Zudov, M. A.

M. A. Zudov, R. R. Du, J. A. Simmons, and J. L. Reno, “Shubnikov-de Haas-like oscillations in millimeter wave photoconductivity in a high-mobility two-dimensional electron gas,” Phys. Rev. B 64, 201311 (2001).
[Crossref]

AIP Conf. Proc. (2)

T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]

M. L. Sadowski, G. Martinez, M. Potemski, C. Berger, and W. A. de Heer, “Infrared magnetospectroscopy of two-dimensional electrons in epitaxial graphene,” AIP Conf. Proc. 893, 619–620 (2007).

Amer. J. Math. (1)

E. H. Hall, “On a new action of the magnet on electric currents,” Amer. J. Math. 2, 287–292 (1879).
[Crossref]

Ann. Phys. (4)

P. Drude, “Zur Elektronentheorie der Metalle,” Ann. Phys. 306, 566–613 (1900).
[Crossref]

P. Drude, “Üeber die Gesetze der Reflexion und Brechung des Lichtes an der Grenze absorbirender Krystalle,” Ann. Phys. 268, 584–625 (1887).
[Crossref]

P. Drude, “Beobachtungen über die Reflexion des Lichtes am Antimonglanz,” Ann. Phys. 270, 489–531 (1888).
[Crossref]

M. Schubert, “Another century of ellipsometry,” Ann. Phys. 15, 480–497 (2006).
[Crossref]

Ann. Phys. Chem. (1)

P. Drude, “Bestimmung der optischen Constanten der Metalle,” Ann. Phys. Chem. 275, 481–554 (1890).
[Crossref]

Appl. Opt. (5)

Appl. Phys. Lett. (16)

K. Yatsugi, N. Matsumoto, T. Nagashima, and M. Hangyo, “Transport properties of free carriers in semiconductors studied by terahertz time domain magneto-optical ellipsometry,” Appl. Phys. Lett. 98, 212108 (2011).
[Crossref]

O. Morikawa, M. Tonouchi, and M. Hangyo, “Sub-THz spectroscopic system using a multimode laser diode and photoconductive antenna,” Appl. Phys. Lett. 75, 3772–3774 (1999).
[Crossref]

O. Morikawa, M. Tonouchi, and M. Hangyo, “A cross-correlation spectroscopy in subterahertz region using an incoherent light source,” Appl. Phys. Lett. 76, 1519–1521 (2000).
[Crossref]

B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]

R. Shimano, Y. Ino, Y. P. Svirko, and M. Kuwata-Gonokami, “Terahertz frequency Hall measurement by magneto-optical Kerr spectroscopy in InAs,” Appl. Phys. Lett. 81, 199–201 (2002).
[Crossref]

W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. A. Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, “Cyclotron resonance and quantum hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface,” Appl. Phys. Lett. 70, 2123–2125 (1997).
[Crossref]

T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]

D. Some and A. Nurmikko, “Real-time electron cyclotron oscillations observed by terahertz techniques in semiconductor heterostructures,” Appl. Phys. Lett. 65, 3377–3379 (1994).
[Crossref]

T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
[Crossref]

T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]

T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch, “Electron effective mass and phonon modes in GaAs incorporating Boron and Indium,” Appl. Phys. Lett. 90, 182110 (2007).
[Crossref]

S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]

T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]

Y. Ikebe and R. Shimano, “Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect,” Appl. Phys. Lett. 92, 012111 (2008).
[Crossref]

IEEE J. Disp. Technol. (1)

M. Krames, O. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Disp. Technol. 3, 160–175 (2007).
[Crossref]

IEEE Trans. Electron Devices (2)

Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]

L. F. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, H. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. Shealy, “Undoped AlGaN/GaN HEMTs for microwave power amplification,” IEEE Trans. Electron Devices 48, 479–485 (2001).
[Crossref]

Int. J. Mod. Phys. B (1)

M. L. Sadowski, G. Martynez, M. Potemski, C. Berger, and W. A. D. Heer, “Magneto-spectroscopy of epitaxial graphene,” Int. J. Mod. Phys. B 21, 1145–1154 (2007).
[Crossref]

J. Am. Chem. Soc. (1)

R. Roy, V. G. Hill, and E. F. Osborn, “Polymorphism of Ga2O3 and the system Ga2O3,” J. Am. Chem. Soc. 74, 719–722 (1952).
[Crossref]

J. Appl. Phys. (5)

S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
[Crossref]

G. B. Wright and B. Lax, “Magnetoreflection experiments in intermetallics,” J. Appl. Phys. 32, 2113–2117 (1961).
[Crossref]

Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amono, “Magneto-optical studies of GaN and GaN/AlxGa1−xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance,” J. Appl. Phys. 79, 8007–8010 (1996).
[Crossref]

O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, “Faraday ellipticity and Faraday rotation of a doped-silicon wafer studied by terahertz time-domain spectroscopy,” J. Appl. Phys. 100, 033105 (2006).
[Crossref]

E. D. Palik, S. Teitler, and R. F. Wallis, “Free carrier cyclotron resonance, Faraday rotation, and Voigt double refraction in compound semiconductors,” J. Appl. Phys. 32, 2132–2136 (1961).
[Crossref]

J. Cryst. Growth (1)

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “MBE grown Ga2O3 and its power device applications,” J. Cryst. Growth 378, 591–595 (2013).
[Crossref]

J. Electron. Mater. (1)

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
[Crossref]

J. Infrared Millim. Terahertz Waves (1)

T. Nagashima, M. Tani, and M. Hangyo, “Polarization-sensitive THz-TDS and its application to anisotropy sensing,” J. Infrared Millim. Terahertz Waves 34, 740–775 (2013).
[Crossref]

J. Mater. Chem. (1)

B. Kumara and S.-W. Kim, “Recent advances in power generation through piezoelectric nanogenerators,” J. Mater. Chem. 21, 18946–18958 (2011).
[Crossref]

J. Opt. Soc. Am. (5)

J. Opt. Soc. Am. A (3)

J. Opt. Soc. Am. B (1)

J. Phys. C (1)

F. Gervais and B. Piriou, “Anharmonicity in several-polar-mode crystals: adjusting phonon self-energy of LO and TO modes in Al2O3 and TiO2 to fit infrared reflectivity,” J. Phys. C 7, 2374–2386 (1974).

J. Phys. D (1)

J. Lloyd-Hughes, “Terahertz spectroscopy of quantum 2D electron systems,” J. Phys. D 47, 374006 (2014).
[Crossref]

Jpn. J. Appl. Phys. (1)

H. Sumikura, T. Nagashima, H. Kitahara, and M. Hangyo, “Development of a cryogen-free terahertz time-domain magnetooptical measurement system,” Jpn. J. Appl. Phys. 46, 1739–1744 (2007).
[Crossref]

Mater. Res. Soc. Symp. Proc. (1)

T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).

Nano Lett. (1)

B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, “Current saturation and voltage gain in bilayer graphene field effect transistors,” Nano Lett. 12, 1324–1328 (2012).
[Crossref]

Nat. Mater. (1)

A. Geim and K. Novoselov, “The rise of graphene,” Nat. Mater. 6, 183–191 (2007).
[Crossref]

Nat. Photonics (1)

M. Tonouchi, “Cutting-edge terahertz technology,” Nat. Photonics 1, 97–105 (2007).
[Crossref]

Nat. Phys. (2)

I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko, “Giant Faraday rotation in single- and multilayer graphene,” Nat. Phys. 7, 48–51 (2010).
[Crossref]

Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrat, M. Bonn, M. Kläui, and D. Turchinovich, “Accessing the fundamentals of magnetotransport in metals with terahertz probes,” Nat. Phys. 11, 761–766 (2015).
[Crossref]

Opt. Express (6)

Opt. Lett. (2)

Phys. Lett. (1)

B. Rheinländer, “Der Einfluss der Energieverteilung der Ladungsträger in Halbleitern auf die Bestimmung ihrer effektiven Masse aus der Infrarot-Plasma-Reflexion,” Phys. Lett. 29A, 420–421 (1969).
[Crossref]

Phys. Rev. (9)

M. E. Brodwin and R. J. Vernon, “Free-carrier magneto-microwave Kerr effect in semiconductors,” Phys. Rev. 140, A1390–A1400 (1965).
[Crossref]

G. Dresselhaus, A. F. Kip, and C. Kittel, “Cyclotron resonance of electrons and holes in silicon and germanium crystals,” Phys. Rev. 98, 368–384 (1955).
[Crossref]

H. H. Tippins, “Optical absorption and photoconductivity in the band edge of β−Ga2O3,” Phys. Rev. 140A, A316–A319 (1965).
[Crossref]

J. K. Galt, W. A. Yager, and H. W. Dail, “Cyclotron resonance effects in graphite,” Phys. Rev. 103, 1586–1587 (1956).
[Crossref]

W. G. Spitzer and H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882–890 (1957).
[Crossref]

P. Nozières, “Cyclotron resonance in graphite,” Phys. Rev. 109, 1510–1521 (1958).
[Crossref]

M. Cardona, “Electron effective masses of InAs and GaAs as a function of temperature and doping,” Phys. Rev. 121, 752–758 (1961).
[Crossref]

A. S. Barker, “Transverse and longitudinal optic mode study in MgF2 and ZnF2,” Phys. Rev. 136, A1290–A1295 (1964).
[Crossref]

D. W. Berreman and F. C. Unterwald, “Adjusting poles and zeros of dielectric dispersion to fit reststrahlen of PrCl3 and LaCl3,” Phys. Rev. 174, 791–799 (1968).
[Crossref]

Phys. Rev. B (19)

T. Morimoto, M. Koshino, and H. Aoki, “Faraday rotation in bilayer and trilayer graphene in the quantum Hall regime,” Phys. Rev. B 86, 155426 (2012).
[Crossref]

W. Xu, L. Wood, and T. Golding, “Optical degeneracies in anisotropic layered media: Treatment of singularities in a 4 × 4 matrix formalism,” Phys. Rev. B 61, 1740–1743 (2000).
[Crossref]

T. Hofmann, V. Gottschalch, and M. Schubert, “Far-infrared dielectric anisotropy and phonon modes in spontaneously CuPt-ordered Ga0.52In0.48P,” Phys. Rev. B 66, 195204 (2002).

A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
[Crossref]

W. W. Toy, M. S. Dresselhaus, and G. Dresselhaus, “Minority carriers in graphite and the H-point magnetoreflection spectra,” Phys. Rev. B 15, 4077–4090 (1977).
[Crossref]

M. Schubert, “Polarization-dependent optical parameters of arbitrarily anisotropic homogeneous layered systems,” Phys. Rev. B 53, 4265–4274 (1996).
[Crossref]

R. F. Wallis, J. J. Brion, E. Burstein, and A. Hartstein, “Theory of surface polaritons in anisotropic dielectric media with application to surface magnetoplasmons in semiconductors,” Phys. Rev. B 9, 3424–3437 (1974).
[Crossref]

J. A. Curtis, T. Tokumoto, A. T. Hatke, J. G. Cherian, J. L. Reno, S. A. McGill, D. Karaiskaj, and D. J. Hilton, “Cyclotron decay time of a two-dimensional electron gas from 0.4 to 100 K,” Phys. Rev. B 93, 155437 (2016).
[Crossref]

M. A. Zudov, R. R. Du, J. A. Simmons, and J. L. Reno, “Shubnikov-de Haas-like oscillations in millimeter wave photoconductivity in a high-mobility two-dimensional electron gas,” Phys. Rev. B 64, 201311 (2001).
[Crossref]

Y. Ino, R. Shimano, Y. Svirko, and M. Kuwata-Gonokami, “Terahertz time domain magneto-optical ellipsometry in reflection geometry,” Phys. Rev. B 70, 155101 (2004).
[Crossref]

K. Suzuki and J. C. Hensel, “Quantum resonances in the valence bands of germanium,” Phys. Rev. B 9, 4184–4218 (1974).
[Crossref]

O. L. Berman, G. Gumbs, and Y. E. Lozovik, “Magnetoplasmons in layered graphene structures,” Phys. Rev. B 78, 085401 (2008).
[Crossref]

M. Koshino and T. Ando, “Magneto-optical properties of multilayer graphene,” Phys. Rev. B 77, 115313 (2008).
[Crossref]

I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko, “Multicomponent magneto-optical conductivity of multilayer graphene on SiC,” Phys. Rev. B 84, 035103 (2011).
[Crossref]

N. A. Goncharuk, L. Nádvorník, C. Faugeras, M. Orlita, and L. Smrčka, “Infrared magnetospectroscopy of graphite in tilted fields,” Phys. Rev. B 86, 155409 (2012).
[Crossref]

M.-H. Kim, T. Tanaka, C. T. Ellis, A. Mukherjee, G. Acbas, I. Ohkubo, H. Christen, D. Mandrus, H. Kontani, and J. Cerne, “Infrared anomalous Hall effect in CaxSr1−xRuO3 films,” Phys. Rev. B 88, 155101 (2013).
[Crossref]

D. S. L. Abergel and V. I. Fal’ko, “Optical and magneto-optical far-infrared properties of bilayer graphene,” Phys. Rev. B 75, 155430 (2007).
[Crossref]

D. A. Platts, D. D. L. Chung, and M. S. Dresselhaus, “Far-infrared magnetoreflection studies of graphite intercalated with bromide,” Phys. Rev. B 15, 1087–1092 (1977).
[Crossref]

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]

Phys. Rev. Lett. (8)

P. R. Schroeder, M. S. Dresselhaus, and A. Javan, “Location of electron and hole carriers in graphite from laser magnetoreflection data,” Phys. Rev. Lett. 20, 1292–1295 (1968).
[Crossref]

P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]

Y. Ikebe, T. Morimoto, R. Masutomi, T. Okamoto, H. Aoki, and R. Shimano, “Optical Hall effect in the integer quantum Hall regime,” Phys. Rev. Lett. 104, 256802 (2010).
[Crossref]

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Theory of magnetoplasmons in semiconductors,” Phys. Rev. Lett. 28, 1455–1458 (1972).
[Crossref]

Y. Lubashevsky, L. Pan, T. Kirzhner, G. Koren, and N. Armitage, “Optical birefringence and dichroism of cuprate superconductors in the THz regime,” Phys. Rev. Lett. 112, 147001 (2014).
[Crossref]

L. Wu, W.-K. Tse, M. Brahlek, C. Morris, R. V. Aguilar, N. Koirala, S. Oh, and N. Armitage, “High-resolution Faraday rotation and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3,” Phys. Rev. Lett. 115, 217602 (2015).
[Crossref]

M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D. K. Maude, A.-L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, “Approaching the Dirac point in high-mobility multilayer epitaxial graphene,” Phys. Rev. Lett. 101, 267601 (2008).
[Crossref]

M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, and M. Potemski, “Carrier scattering from dynamical magnetoconductivity in quasi-neutral epitaxial graphene,” Phys. Rev. Lett. 107, 216603 (2011).
[Crossref]

Phys. Stat. Solidi A (2)

T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
[Crossref]

M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Development of gallium oxide power devices,” Phys. Stat. Solidi A 211, 21–26 (2014).
[Crossref]

Phys. Stat. Solidi B (3)

N. Hindley, “Cyclotron resonance and the free-carrier magneto-optical properties of a semiconductor,” Phys. Stat. Solidi B 7, 67–80 (1964).
[Crossref]

B. Rheinländer and H. Neumann, “Faraday rotation in n-type AlAs,” Phys. Stat. Solidi B 45, K9–K13 (1971).
[Crossref]

B. Rheinländer, H. Neumann, P. Fischer, and G. Kühn, “Anisotropic effective masses of electrons in AlAs,” Phys. Stat. Solidi B 49, K167–K169 (1972).
[Crossref]

Phys. Stat. Solidi C (3)

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
[Crossref]

T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert, “Optical Hall effect studies on modulation-doped AlxGa1−xAs:Si/GaAs quantum wells,” Phys. Stat. Solidi C 5, 1386–1390 (2008).
[Crossref]

Physikal. Z. (1)

P. Drude, “Zur Ionentheorie der Metalle,” Physikal. Z. 1, 161–165 (1900).

Proc. IEEE (1)

G. E. Moore, “Cramming more components onto integrated circuits,” Proc. IEEE 86, 82–85 (1998).

Proc. SPIE (3)

T. Hofmann, M. Schubert, and C. M. Herzinger, “Far-infrared magneto-optic generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Proc. SPIE 4779, 90–97 (2002).
[Crossref]

T. E. Tiwald and M. Schubert, “Measurement of rutile TiO2 dielectric tensor from 0.148 to 33 μm using generalized ellipsometry,” Proc. SPIE 4103, 19–29 (2000).
[Crossref]

M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]

Rev. Sci. Instrum. (3)

T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]

P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
[Crossref]

T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]

Science (1)

J. F. Wager, “Transparent electronics,” Science 300, 1245–1246 (2003).
[Crossref]

Semicond. Sci. Technol. (2)

A. Parisini and R. Fornari, “Analysis of the scattering mechanisms controlling electron mobility in β−Ga2O3 crystals,” Semicond. Sci. Technol. 31, 035023 (2016).
[Crossref]

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, “Methods for magnetotransport characterization of IR detector materials,” Semicond. Sci. Technol. 8, 805–823 (1993).
[Crossref]

Solid State Commun. (2)

M. Orlita, C. Faugeras, G. Martinez, D. Maude, J. Schneider, M. Sprinkle, C. Berger, W. de Heer, and M. Potemski, “Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison,” Solid State Commun. 149, 1128–1131 (2009).
[Crossref]

W. Weber, S. Seidl, V. Bel’akov, L. Golub, S. Danilov, E. Ivchenko, W. Prettl, Z. Kvon, H.-I. Cho, J.-H. Lee, and S. Ganicheva, “Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems,” Solid State Commun. 145, 56–60 (2008).
[Crossref]

Surf. Sci. (2)

J. J. Brion, R. F. Wallis, A. Hartstein, and E. Burstein, “Interaction of surface magnetoplasmons and surface optical phonons in polar semiconductors,” Surf. Sci. 34, 73–80 (1973).
[Crossref]

R. H. Muller, “Definitions and conventions in ellipsometry,” Surf. Sci. 16, 14–33 (1969).
[Crossref]

Thin Solid Films (4)

M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).

M. Schubert, T. Hofmann, and C. M. Herzinger, “Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures,” Thin Solid Films 455–456, 563–570 (2004).
[Crossref]

P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).

T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]

Woollam Annual Newsletter (1)

K. Järrendahl and B. Kahr, “Hans Mueller (1900-1965),” Woollam Annual Newsletter 2011(11), 8–9 (2011).

Z. Phys. (1)

L. Landau, “Diamagnetismus der Metalle,” Z. Phys. 64, 629–637 (1930).

Other (44)

B. Rheinländer, “Infrarot-Faraday-Effekt an Halbleitern,” Master’s thesis (Universität Leipzig, 1965).

M. Schubert, “Theory and application of generalized ellipsometry,” in Handbook of Ellipsometry, E. Irene and H. Tompkins, eds. (William Andrew, 2004).

Note that electric field vectors E contain four independent pieces of information if the plane wave is fully coherent and time harmonic. Representing time averages over infinite observation times, the four parameters can be used to characterize the electric field amplitude, absolute phase, ellipticity, and orientation of the polarization ellipse.

A. Gerrard and J. Burch, Introduction to Matrix Methods in Optics, Dover Books on Physics (Dover, 1994).

D. Goldstein, Polarized Light, 3rd ed. (CRC Press, 2011).

Note the four independent pieces of information contained in the Stokes vector. The four parameters can be used to characterize the total light intensity, degree of polarization, ellipticity, and orientation of the polarization ellipse.

A. Röseler, Infrared Spectroscopic Ellipsometry (Akademie-Verlag, 1990).

For example, explicit expressions for the complex Fresnel transmission coefficients can be found in [45].

For example, j=2→{k,l,m}={0,1,3}.

S. Borkar, “The exascale challenge,” in International Symposium on VLSI Design Automation and Test (2010), pp. 2–3.

http://www.intel.com/content/www/us/en/silicon-innovations/intel-14nm-technology.html .

L. T. Berger and K. Iniewski, Smart Grid Applications, Communications, and Security (Wiley, 2012).

M. Groover, Automation, Production Systems, and Computer-Integrated Manufacturing (Prentice-Hall, 2007).

https://newsroom.intel.com/news-releases/intel-and-micron-produce-breakthrough-memory-technology/ .

J. T. Devreese, ed., Theoretical Aspects and New Developments in Magneto-Optics (Springer, 1979).

C. Pidgeon, “Free carrier optical properties of semiconductors,” in Handbook on Semiconductors, M. Balkanski, ed. (North-Holland, 1980).

N. Miura, Physics of Semiconductors in High Magnetic Fields (University, 2008).

H. Fujiwara, Spectroscopic Ellipsometry (Wiley, 2007).

R. M. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, 1984).

M. Schubert, Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons and Polaritons, Vol. 209 of Springer Tracts in Modern Physics (Springer, 2004).

P. J. C. Kühne, “The optical Hall effect in three- and two-dimensional materials,” Ph.D. dissertation (University of Nebraska, 2014).

Note that the constant but generally complex amplitude parameter in Eq. (30) also may be augmented with a frequency-dependent imaginary part in order to represent the effect of an harmonic coupling. See also [150].

The same formalism can be used in case of holes but with a different effective mass parameter.

The transition from the dielectric function tensor of a given anisotropic material into the four indices of refraction is discussed in previous work [124,129].

W. Kleber and H.-J. Bautsch, Einführung in die Kristallographie (de Gruyter, 2010).

T. Hofmann, “Far-infrared spectroscopic ellipsometry on semiconductor heterostructures,” Ph.D. thesis (University of Leipzig, 2004).

A common requirement in theoretical studies of the electromagnetic response of matter consists in the imposition that a specific medium should be Lorentz reciprocal. For a dielectric medium (the magnetic susceptibility tensor being diagonal and unity), this means that the dielectric tensor is equal to its transposed form. The magnetized plasma and more general types of gyrotropic mediums belong to the most prominent representatives of nonreciprocal mediums. A gyrotropic material is a material in which left- and right-rotating elliptical polarizations can propagate at different speeds. The gyrotropic effect caused by a quasi-static magnetic field breaks the time-reversal symmetry as well as the Lorentz reciprocity. For more information see, for example, [102].

Corresponding expressions for arbitrary orientations of the magnetic field are given by EC′=Aφ,θ,ψ(R)EC, with the Euler angles given by B|B|=Aϕ,θ,ψ(R)(0,0,1)T.

Corresponding transformation matrices for arbitrary orientations of the magnetic field are given by (A(C))=(Aϕ,θ,ψ(R))−1A(C)Aϕ,θ,ψ(R), with the Euler angles given by B|B|=Aϕ,θ,ψ(R)(0,0,1)T.

For ΨE=π/4 and ΔE=π/2, the elliptic eigensystem is equivalent to the circular eigensystem A(E)=A(C).

L. Landau and E. Lifšic, Elektrodynamik der Kontinua, Lehrbuch der theoretischen Physik (Akademie Verlag, 1990).

Note that Eq. (17) must hold for any E0; thus, Eq. (17) can be stated for each λk separately.

In the following equation the Einstein notation is used, and the covariance and contravariance are ignored because all coordinate systems are Cartesian. The summation is only executed over pairs of lower indices.

C. Kittel, Introduction to Solid State Physics (Wiley, 2009).

H. Mueller, “Memorandum on the polarization optics of the photoelastic shutter,” Report of the OSRD project (Massachusetts Institute of Technology, 1943).

E. Hecht, Optics (Addison-Wesley, 1987).

M. Schubert, “Generalized ellipsometry,” in Introduction to Complex Mediums for Optics and Electromagnetics, W. S. Weiglhofer and A. Lakhtakia, eds. (SPIE, 2003), pp. 677–710.

H. Thompkins and E. A. Irene, eds., Handbook of Ellipsometry (William Andrew, 2004).

Conceptually, a magneto electric optical Hall effect also may exist, where a current driven by the time-harmonic electric field component, under the influence of an external magnetic field, produces in addition to, or separately from a magneto-optic dielectric displacement, a magnetization response.

The dielectric tensor is considered nonlocal in time but local in space, that is, frequency dependent but not wave vector dependent. A charged compressible fluid model resulting in a dielectric tensor for a nonlocal spatial response is described by Weiglhofer. In principle, the optical Hall effect should be observable in semiconductors with very large carrier concentrations where nonlocal spatial effects may need to be considered.

C. Klingshirn, Semiconductor Optics (Springer-Verlag, 1995).

The electrical Hall effect is well known and has been described in many textbooks. It is beyond the scope of this paper to provide an in-depth review of the electrical Hall effect. The primary limitation in the electrical Hall effect is the physical requirement of ohmic contacts. Due to the fact that proper electric contact formation requires precise knowledge of surface potential functions for any given material and appropriate technological procedures, it is commonly difficult to provide equal contacts to multiple layered structures. Usually, contacts are made to the surface or bottom layer. Often, the actual passage, which the driving currents will take within the sample structure, is difficult to ascertain and hampers accurate data analysis.

P. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, 1999).

W. S. Weiglhofer and A. Lakhtakia, Introduction to Complex Mediums for Optics and Electromagnetics (SPIE, 2003).

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Figures (5)

Fig. 1.
Fig. 1. Schematic of the electrical Hall effect in a thin conducting sheet. Free charge carriers produce a transverse voltage by charge separation under the influence of the Lorentz force due to a magnetic field B when driven by a DC current through the sheet. Accordingly, the longitudinal voltage required to drive the DC current differs with and without the magnetic field. Note that, ideally, the sheet should be infinitesimally thin [107]. The electric Hall voltage is characteristic of the sheet material and depends on the free charge carrier types and density properties that constitute the current leading to the Hall voltage. Note that transport must occur homogeneously across the entire sheet, which makes analyses of the electric Hall voltage measured across complex sheet structures with multiple constituents difficult.

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Fig. 2.
Fig. 2. Schematic of the optical Hall effect in a conducting sample consisting of single or multiple conducting layers and sheets, in reflection configuration. Free charge carriers produce a dielectric polarization following the electric field of an incident electromagnetic field (analogous to the longitudinal Hall voltage), here for example parallel to the surface. The induced polarization P FCC produces P Hall due to the Lorentz force, oriented perpendicular to B and the incident electric field vector (analogous to the transverse Hall voltage). P FCC + P Hall are the source of the reflected light and contain a small circular polarization component, which provides information on the type of charge carrier, its density, mobility, and effective mass properties [1]. The physical motion of the charges remains local within the lattice of the material, describing pathways that depend on the Fermi velocity, their average scattering time, the frequency of the incident light, and the magnetic field direction. If multiple layers are thin enough against the skin depth at long wavelengths, light interacts with multiple layers and reveals, for example, free carrier properties within buried layers otherwise inaccessible to direct electrical measurements. Hence, the optical Hall effect can be measured across complex sheet and layer structures.

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Fig. 3.
Fig. 3. Left-handed [ E + , Figs. 3(a) and 3(c)] and right-handed [ E − , Figs. 3(b) and 3(d)] circularly polarized electromagnetic plane waves interact with a dielectrically polarizable material under the influence of an external quasi-static magnetic field B . The field B is collinear with the wave propagation direction. The displacement field phasors P ± are proportional to complex-valued, frequency-dependent response functions χ ± ( B ) . Symmetry requires switch of indices upon reversal of the magnetic field: χ ± ( B ) = χ ∓ ( − B ) . The latter statement originates from the assumption that P ± does not depend on propagation direction of E ± but only on the course of the electric field phasor at a given plane within the material. Functions χ ± then determine the symmetric and antisymmetric parts in the optical Hall effect tensor [Eq. (11)].

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Fig. 4.
Fig. 4. Wave vector k in of the incoming electromagnetic plane wave and the sample normal n define the angle of incidence Φ and the plane of incidence. The amplitudes of the electric field of the incoming E in and the reflected E out plane wave can be decomposed into complex field amplitudes E p in , E s in , E p out , and E s out , where the indices p and s stand for parallel and perpendicular to the plane of incidence, respectively.

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Fig. 5.
Fig. 5. Schematic presentation, under the incoming angle Φ , of the electromagnetic wave E I , and the reflected E R , transmitted E T , and backward-traveling electromagnetic waves E B used in the 4 × 4 matrix formalism. The medium into which the wave is reflected (transmitted) is labeled R (T). Between the media R and T, n slabs of parallel layers with homogenous optical properties may be located. Backward-traveling waves E B in the medium T are permitted. Plane ( x , y ) is parallel to the interfaces/surfaces; z points into the surface. The surface is the interface against which the incoming beam is directed.

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Equations (60)

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D = ϵ 0 E + P = ϵ 0 E + χ E = ϵ 0 ( I + χ ) E = ϵ 0 ϵ E ,
ϵ = I + χ = I + ∑ k χ k ,
ϵ ( x , y , z ) = ( ϵ x x ϵ x y ϵ x z ϵ y x ϵ y y ϵ y z ϵ z x ϵ z y ϵ z z ) = I + ( χ x x χ x y χ x z χ y x χ y y χ y z χ z x χ z y χ z z ) .
ϵ i j = δ i j + 1 2 ( χ i j + χ j i ) + 1 2 ( χ i j − χ j i ) ,
ϵ ( ± B ) = I + χ B = 0 + χ ± B .
ϵ x , y , z = A − 1 ϵ ξ , η , ς A = I + ∑ k A − 1 ( χ ξ k 0 0 0 χ η k 0 0 0 χ ς k ) A ,
A ϕ , θ , ψ ( R ) = ( cos   ψ sin   ψ 0 − sin   ψ cos   ψ 0 0 0 1 ) ( 1 0 0 0 cos   θ sin   θ 0 − sin   θ cos   θ ) ⁢ ( cos   ϕ sin   ϕ 0 − sin   ϕ cos   ϕ 0 0 0 1 ) .
P C = ( χ + 0 0 0 χ − 0 0 0 1 ) E C .
E C = ( E + E − E z ) = ( 1 2 ( E x − i E y ) 1 2 ( E x + i E y ) E z ) .
A ( C ) = 1 2 ( 1 − i 0 1 i 0 0 0 2 ) .
χ ( ± B ) = 1 2 ( ( χ + + χ − ) ∓ i ( χ + − χ − ) 0 ± i ( χ + − χ − ) ( χ + + χ − ) 0 0 0 0 ) .
A ( E ) = 1 a a ⋆ − 1 ( a 1 0 − a − 1 − 1 0 0 0 a a ⋆ − 1 ) ,
ϵ Ξ k = λ k Ξ k , k = 1,2 , 3 ;
E G = a 1 Ξ 1 + a 2 Ξ 2 + a 3 Ξ 3 .
A ( G ) = 1 det ( A ( G ) ) ( Ξ 1 , x Ξ 1 , y Ξ 1 , z Ξ 2 , x Ξ 2 , y Ξ 2 , z Ξ 3 , x Ξ 3 , y Ξ 3 , z ) .
0 = det ( ϵ ′ ) − λ 1 λ 2 λ 3 = det ( A ϵ A − 1 ) − λ 1 λ 2 λ 3 = det ( A ) det ( ϵ ) det ( A − 1 ) − λ 1 λ 2 λ 3 = det ( ϵ ) − λ 1 λ 2 λ 3 .
⟨ ∂ u ∂ t ⟩ = − ⟨ R e [ div   S ] ⟩ = ⟨ E D ˙ * + E * D ˙ + H B ˙ * + H * B ˙ ⟩ = ω ⟨ i E ϵ * E * − i E * ϵ E + i H μ * H * − i H * − H ⟩ = ω I m [ E 0 * ϵ E 0 ] + ω I m [ H 0 * μ H 0 ] ≥ 0 ,
I m [ λ k ] ≥ 0 ,
m x ¨ + m γ x ˙ + m ω 0 2 x = q E + q ( x ˙ × B ) ,
μ opt = q m − 1 γ − 1 .
E = 1 N q [ i m q ω ( ω 0 2 − ω 2 I − i ω γ ) j + ( B × j ) ] ,
χ i k L − D = N q 2 ϵ 0 [ m i k ( ω 0 , i k 2 − ω 2 − i ω γ i k ) − i ω ϵ i j k q B j ] − 1 .
ϵ L = I + χ L = ( ϵ x L 0 0 0 ϵ y L 0 0 0 ϵ z L ) .
ϵ k L = 1 + χ k L = ϵ ∞ , k ∏ j = 1 l ω 2 + i ω γ LO , k , j − ω LO , k , j 2 ω 2 + i ω γ TO , k , j − ω TO , k , j 2 ,
χ D = χ B = 0 D + χ ± B D ,
χ B = 0 D = − ω p 2 ω ( ω + i γ ) I = χ D I ,
ω p = N q 2 m ϵ 0 ,
χ ± = χ D 1 ∓ ω c ω + i γ ,
ω c = q | B | m .
χ ± = e ± i ϕ ∑ k A k ω 0 , k 2 − ω 2 − i γ k ω ,
E Graphite L L ( n , B ⊥ ) = ℏ ω c ( n + n 0 ) ,
E SLG LL ( n , B ⊥ ) = sign ( n ) E 0 | n | ,
E N − B L G LL ( n , μ , B ⊥ ) = sign ( n ) 1 2 [ ( λ N γ ) 2 + ( 2 | n | + 1 ) E 0 2 + μ ( λ N γ ) 4 + 2 ( 2 | n | + 1 ) E 0 2 ( λ N γ ) 2 + E 0 4 ] 1 / 2 ,
E out = JE in .
J = ( j p p j p s j s p j s s ) .
r p p = ( E p out E p in ) E s in = 0 , r p s = ( E s out E p in ) E s in = 0 , r s p = ( E p out E s in ) E p in = 0 , r s s = ( E s out E s in ) E p in = 0 .
( S 1 S 2 S 3 S 4 ) = ( E p E p * + E s E s * E p E p * − E s E s * E p E s * + E p * E s i ( E p E s * − E p * E s ) ) = ( I p + I s I p − I s I + 45 − I − 45 I σ + − I σ − )
S out = MS in ,
M = ( M 11 M 12 M 13 M 14 M 21 M 22 M 23 M 24 M 31 M 32 M 33 M 34 M 41 M 42 M 43 M 44 ) .
M i j = 1 2 Tr ( J σ i J † σ j ) ,
σ 1 = ( 1 0 0 1 ) , σ 2 = ( 1 0 0 − 1 ) ,
σ 3 = ( 0 1 1 0 ) , σ 4 = ( 0 − i i 0 ) .
M is = ( 1 2 ( r p p r p p * + r s s r s s * ) 1 2 ( r p p r p p * − r s s r s s * ) 0 0 1 2 ( r p p r p p * − r s s r s s * ) 1 2 ( r p p r p p * + r s s r s s * ) 0 0 0 0 R e ( r p p r s s * ) I m ( r p p r s s * ) 0 0 − I m ( r p p r s s * ) R e ( r p p r s s * ) ) ,
M an = ( 1 2 ( r p s r p s * + r s p r s p * ) − 1 2 ( r p s r p s * − r s p r s p * ) R e ( r p p r p s * + r s s r s p * ) I m ( r p p r p s * − r s s r s p * ) 1 2 ( r p s r p s * − r s p r s p * ) − 1 2 ( r p s r p s * + r s p r s p * ) R e ( r p p r p s * − r s s r s p * ) I m ( r p p r p s * + r s s r s p * ) R e ( r p p r s p * + r s s r p s * ) R e ( r p p r s p * − r s s r p s * ) R e ( r p s r s p * ) − I m ( r p s r s p * ) − I m ( r p p r s p * − r s s r p s * ) − I m ( r p p r s p * + r s s r p s * ) − I m ( r p s r s p * ) − R e ( r p s r s p * ) ) .
M B = M ( ϵ B ≠ 0 ( k ) ) .
φ F K = 1 2 arctan [ M 31 B + M 32 B   cos [ 2 β ] + M 33 B   sin [ 2 β ] ∓ tan [ 2 β ] ( M 21 B + M 22 B   cos [ 2 β ] + M 23 B   sin [ 2 β ] ) M 21 B + M 22 B   cos [ 2 β ] + M 23 B   sin [ 2 β ] ± tan [ 2 β ] ( M 31 B + M 32 B   cos [ 2 β ] + M 33 B   sin [ 2 β ] ) ] ,
∂ Ψ ∂ z = i ω c Δ Ψ ,
( E p I E s I E p R E s R ) = L ( E p T E s T E p B E s B ) ,
L = L R − 1 ( ∏ k = 1 m L P k ) L T .
Δ = ( − k x ϵ z x ϵ z z − k x ϵ z y ϵ z z 0 1 − k x 2 ϵ z z 0 0 − 1 0 − ϵ y x + ϵ y z ϵ z x ϵ z z k x 2 − ϵ y y + ϵ y z ϵ z y ϵ z z 0 k x ϵ y z ϵ z z ϵ x x − ϵ x z ϵ z x ϵ z z ϵ x y − ϵ x z ϵ z y ϵ z z 0 − k x ϵ x z ϵ z z ) ,
L R − 1 = 1 2 ( 0 1 − ( n R   cos   Φ ) − 1 0 0 1 ( n R   cos   Φ ) − 1 0 ( cos   Φ ) − 1 0 0 n R − 1 − ( cos   Φ ) − 1 0 0 n R − 1 ) ,
L T = ( 0 0 cos   Φ T cos   Φ T 1 1 0 0 − n T   cos   Φ T n T   cos   Φ T 0 0 0 0 n T n T ) .
cos   Φ T = 1 − ( n R / n T ) 2   sin 2   Φ .
L P k = exp ( − i ω c Δ k d k ) = ∑ j = 0 3 β j k Δ k j .
β n = ∑ j = 0 3 α n exp ( i ω q j ( − d ) / c ) ( q j − q k ) ( q j − q l ) ( q j − q m ) ,
α 0 = − q k q l q m , α 1 = q k q l + q k q m + q l q m , α 2 = − ( q k + q l + q m ) , α 3 = 1 ,
r p p = L 11 L 43 − L 13 L 41 L 11 L 33 − L 13 L 31 , r p s = L 33 L 41 − L 31 L 43 L 11 L 33 − L 13 L 31 , r s p = L 11 L 23 − L 13 L 21 L 11 L 33 − L 13 L 31 , r s s = L 33 L 21 − L 31 L 23 L 11 L 33 − L 13 L 31 .
φ = 1 2 arctan [ M 23 M 33 ] .
φ = ± 1 2 arctan ⁢ [ 2 ω c R e [ χ B eff ( 1 + n T − i χ LL * ) ] − γ | χ B eff | 2 | 1 + n T + i ( ( ω + i γ ) χ B eff + χ LL ) | 2 − | χ B eff | 2 ] ,
χ B eff = ω c ω + i γ ( ω + i γ ) 2 − ω c 2 , χ B = 0 D = − ω p 2 c 1 ( ω + i γ ) 2 − ω c 2 .

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