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P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).
T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]
S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]
T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]
T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]
T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
[Crossref]
T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]
T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]
T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]
M. Schubert, T. Hofmann, and C. M. Herzinger, “Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures,” Thin Solid Films 455–456, 563–570 (2004).
[Crossref]
M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).
T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).
T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
[Crossref]
M. Schubert, T. Hofmann, and C. M. Herzinger, “Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs,” J. Opt. Soc. Am. A 20, 347–356 (2003).
[Crossref]
M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]
T. Hofmann, M. Schubert, and C. M. Herzinger, “Far-infrared magneto-optic generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Proc. SPIE 4779, 90–97 (2002).
[Crossref]
M. Schubert, B. Rheinländer, J. A. Woollam, B. Johs, and C. M. Herzinger, “Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2,” J. Opt. Soc. Am. A 13, 875–883 (1996).
[Crossref]
T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]
B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]
M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
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[Crossref]
M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
[Crossref]
S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
[Crossref]
P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
[Crossref]
S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
[Crossref]
P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
[Crossref]
S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]
T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
[Crossref]
P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).
T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
[Crossref]
S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
[Crossref]
T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
[Crossref]
T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
[Crossref]
T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
[Crossref]
T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert, “Optical Hall effect studies on modulation-doped AlxGa1−xAs:Si/GaAs quantum wells,” Phys. Stat. Solidi C 5, 1386–1390 (2008).
[Crossref]
T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
[Crossref]
T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
[Crossref]
T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch, “Electron effective mass and phonon modes in GaAs incorporating Boron and Indium,” Appl. Phys. Lett. 90, 182110 (2007).
[Crossref]
T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
[Crossref]
T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
[Crossref]
T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
[Crossref]
T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
[Crossref]
M. Schubert, T. Hofmann, and C. M. Herzinger, “Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures,” Thin Solid Films 455–456, 563–570 (2004).
[Crossref]
M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).
T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).
T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
[Crossref]
M. Schubert, T. Hofmann, and C. M. Herzinger, “Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs,” J. Opt. Soc. Am. A 20, 347–356 (2003).
[Crossref]
T. Hofmann, M. Schubert, and C. M. Herzinger, “Far-infrared magneto-optic generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Proc. SPIE 4779, 90–97 (2002).
[Crossref]
M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]
T. Hofmann, V. Gottschalch, and M. Schubert, “Far-infrared dielectric anisotropy and phonon modes in spontaneously CuPt-ordered Ga0.52In0.48P,” Phys. Rev. B 66, 195204 (2002).
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A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]
A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
[Crossref]
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[Crossref]
B. F. Spencer, W. F. Smith, M. T. Hibberd, P. Dawson, M. Beck, A. Bartels, I. Guiney, C. J. Humphreys, and D. M. Graham, “Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique,” Appl. Phys. Lett. 108, 212101 (2016).
[Crossref]
Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
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[Crossref]
S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
[Crossref]
T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
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[Crossref]
Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]
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[Crossref]
A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
[Crossref]
M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
[Crossref]
A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, “Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry,” Phys. Rev. B 62, 7365–7377 (2000).
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Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices 48, 586–590 (2001).
[Crossref]
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A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner, “Phonons and free-carrier properties of binary, ternary, and quaternary group-III Nitride layers measured by infrared spectroscopic ellipsometry,” Phys. Stat. Solidi C 0, 1750–1769 (2003).
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M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. J. Hodgkinson, M. D. Arnold, W. A. Dollase, and C. M. Herzinger, “Generalized ellipsometry of complex mediums in layered systems,” Proc. SPIE 4806, 264–276 (2002).
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M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals,” Phys. Rev. B 93, 125209 (2016).
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S. Knight, S. Schöche, V. Darakchieva, P. Kühne, J.-F. Carlin, N. Grandjean, C. M. Herzinger, M. Schubert, and T. Hofmann, “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies,” Opt. Lett. 40, 2688–2691 (2015).
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P. Kühne, C. M. Herzinger, M. Schubert, J. A. Woollam, and T. Hofmann, “An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument,” Rev. Sci. Instrum. 85, 071301 (2014).
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S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert, “Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN,” J. Appl. Phys. 113, 013502 (2013).
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P. Kühne, V. Darakchieva, R. Yakimova, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, C. M. Herzinger, J. A. Woollam, M. Schubert, and T. Hofmann, “Polarization selection rules for inter-landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect,” Phys. Rev. Lett. 111, 077402 (2013).
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S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva, “Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect,” Appl. Phys. Lett. 103, 212107 (2013).
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T. Hofmann, P. Kühne, S. Schöche, J.-T. Chen, U. Forsberg, E. Janzén, N. B. Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, “Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 101, 192102 (2012).
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T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, “Terahertz ellipsometry and terahertz optical-Hall effect,” Thin Solid Films 519, 2593–2600 (2011).
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T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, “Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry,” Appl. Phys. Lett. 98, 041906 (2011).
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P. Kühne, T. Hofmann, C. M. Herzinger, and M. Schubert, “Terahertz frequency optical-Hall effect in multiple valley band materials,” Thin Solid Films 519, 2613–2616 (2011).
S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann, “Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett. 98, 092103 (2011).
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T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, R. Skomski, C. M. Herzinger, J. A. Woollam, M. Schubert, and E. Schubert, “Thz dielectric anisotropy of metal slanted columnar thin films,” Appl. Phys. Lett. 99, 081903 (2011).
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T. Hofmann, C. M. Herzinger, A. Boosalis, T. E. Tiwald, J. A. Woollam, and M. Schubert, “Variable-wavelength frequency-domain terahertz ellipsometry,” Rev. Sci. Instrum. 81, 023101 (2010).
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T. Hofmann, C. M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert, “The optical Hall effect,” Phys. Stat. Solidi A 205, 779–783 (2008).
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T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. Schaff, and M. Schubert, “Optical Hall effect in hexagonal InN,” J. Electron. Mater. 37, 611–615 (2008).
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T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert, “Optical Hall effect studies on modulation-doped AlxGa1−xAs:Si/GaAs quantum wells,” Phys. Stat. Solidi C 5, 1386–1390 (2008).
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T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch, “Electron effective mass and phonon modes in GaAs incorporating Boron and Indium,” Appl. Phys. Lett. 90, 182110 (2007).
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T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert, “Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation,” Rev. Sci. Instrum. 77, 063902 (2006).
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T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert, “Anisotropy of the Γ -point effective mass and mobility in hexagonal InN,” Phys. Stat. Solidi C 3, 1854–1857 (2006).
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M. Schubert, “Another century of ellipsometry,” Ann. Phys. 15, 480–497 (2006).
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T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert, “Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry,” Appl. Phys. Lett. 88, 042105 (2006).
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T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O’Reilly, “The inertial-mass scale for free-charge-carriers in semiconductor heterostructures,” AIP Conf. Proc. 772, 455–456 (2005).
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M. Schubert, T. Hofmann, and C. M. Herzinger, “Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures,” Thin Solid Films 455–456, 563–570 (2004).
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M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase, “Generalized ellipsometry for orthorhombic, absorbing materials: dielectric functions, phonon modes and band-to-band transitions of Sb2S3,” Thin Solid Films 455–456, 619–623 (2004).
T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill, “Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures,” Mater. Res. Soc. Symp. Proc. 744, M5.32.1–M5.32.16 (2003).
M. Schubert, T. Hofmann, and C. M. Herzinger, “Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs,” J. Opt. Soc. Am. A 20, 347–356 (2003).
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T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka, “Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P,” Appl. Phys. Lett. 82, 3463–3465 (2003).
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T. E. Tiwald and M. Schubert, “Measurement of rutile TiO2 dielectric tensor from 0.148 to 33 μm using generalized ellipsometry,” Proc. SPIE 4103, 19–29 (2000).
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