Abstract

This erratum is to correct an error in the simulations detailed in our paper [J. Opt. Soc. Am A 26, 1687 (2009) ].

© 2009 Optical Society of America

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References

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  1. X. Ma and G. R. Arce, “Binary mask optimization for forward lithography based on the boundary layer model in coherent systems,” J. Opt. Soc. Am. A 26, 1687-1695 (2009).
    [CrossRef]

2009 (1)

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Figures (5)

Fig. 1
Fig. 1

Desired pattern of the aerial image searched on the wafer.

Fig. 2
Fig. 2

OPC optimization based on the BL model for the first type of coherent optical lithography system. N A = 0.68 and λ = 248 nm . Top row (from left to right), initial mask pattern and corresponding output aerial image; middle row (from left to right), optimized binary mask based on the thin-mask approximation and corresponding output aerial image; bottom row (from left to right), optimized binary mask based on the BL model and corresponding output aerial image. In the mask patterns, black and white represent 0 and 1, respectively.

Fig. 3
Fig. 3

Intersections of the aerial images shown in Fig. 2 on the 45th row.

Fig. 4
Fig. 4

OPC optimization based on the BL model for the second type of coherent optical lithography system. N A = 0.85 and λ = 193 nm . Top row (from left to right), initial mask pattern and corresponding output aerial image; middle row (from left to right), optimized binary mask based on the thin-mask approximation and corresponding output aerial image; bottom row (from left to right), optimized binary mask based on the the BL model and corresponding output aerial image. In the mask patterns, black and white represent 0 and 1, respectively.

Fig. 5
Fig. 5

Intersections of the aerial images shown in Fig. 4 on the 48th row.

Equations (1)

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h ( r ) = J 1 ( 2 π r N A λ ) 2 π r N A λ ,

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