Abstract

We calculate the power-dependent propagation constant of a surface-plasma wave as a function of the thickness of the metal film on which it propagates when the metal film is bounded by a nonlinear semiconductor. In the case of a Cu film bounded by InSb at a wavelength of ~5 µm and a temperature of 5 K, we find that the effect of the nonlinearity on the propagation constant is enhanced by a factor of 10 as the metal thickness decreases from 120 to 15 nm.

© 1982 Optical Society of America

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