See Eq. (13) and Fig. 3 of Ref. 7 and also Fig. 3 (b) of this paper.

All CAIC's between 66.3° and 84.7° that appear in Fig. 2 intersect the imaginary axis of the complex ρ plane at four points. It is clear, however, that two and three points of intersection (and tangency) will occur, e.g., at angles of incidence between 66.3° and 75°.

This contour is readily derived from Fig. 4 by plotting ø¯(*d*) vs ψ¯(*d*) for different values of *d*.

It is interesting to observe that when the film-substrate system acts as a *p* or *s* reflection polarizer, such a condition is detected experimentally by the extinction of the reflected beam (the sample under measurement and the polarizer of the ellipsometer now operate as a pair of crossed polarizers). The null in both O'Bryan and Kent and Lawson's ellipsometers becomes due to the reflected beam being extinguished, and not because it is circularly polarized.

Furthermore, the coincident branches also become exactly symmetrical around the ψ¯ =45° line.

At this uv spectral line of mercury, the refractive indices of SiO_{2} and Si are assumed to be 1.5 and (1.67-*j*3. 59), respectively. [Ellipsometric Tables of the Si-SiO_{2} System for Mercury and He-Ne Laser Spectral Lines, edited by G. Gergely (Akademiai Kiado, Budapest, 1971).]

These definitions of the principal angle and the principal azimuth can be extended to include the case of an arbitrary transparent ambient. We should also mention that the value of Δ = + π/2, instead of − π/2, is based on the choice of conventions discussed in the paper by R. H. Muller, "Definitions and Conventions in Ellipsometry," Surface Sci. 16, 14–33 (1969) [also in Proceedings of the Symposium on Recent Developments in Ellipsometry, edited by N. M. Bashara, A. B. Buckman, and A. C. Hall (North-Holland, Amsterdam, (1969)].

See, for example, K. Kinosita and M. Yamamoto, "Principal-Angle-of-Incidence Ellipsometry," Surface Sci. 56, 64–75 (1976) [also in Proceedings of the Third International Conference on Ellipsometry, edited by N. M. Bashara and R. M. A. Azzam (North-Holland, Amsterdam, 1976)].

*P* is measured from the plane of incidence, positive in a counterclockwise sense when looking into the beam.

At these five wavelengths, the refractive indices of SiO_{2} are 1.48, 1.475, 1.47, 1.46, and 1.46, and those of Si are (5. 06-*j*3. 04), (6. 63-*j*2. 74), (5. 63-*j*0. 29), (4. 83-*j*0. 116), and (3. 85-*j*0. 02), respectively (after Gergely, Ref. 6).

Exact symmetry of ø¯(*d*) and ψ¯(*d*) around the line *d*=*d*_{s}, occurs in the limit of zero absorption in the substrate.

The reduced-thickness curve (RTC) is obtained by subtracting from the ordinate of each point on the line d = const the proper multiple of the thickness period *D*_{ø} that is required to bring that point vertically down below the *D*_{ø} boundary curve of the reduced-thickness zone (RTZ) (see the discussion in Ref. 12).

The equations that give *d* when *m*_{1} = *m*_{2} and *m*_{1} = *m*_{2} + 1 are the same as Eqs. (18a) and (18b), respectively, in Ref. 12.

See, for example, the method discussed in Sec. IV of Ref. 7.