Abstract

A computer-assisted, ellipsometric system performs in situ measurements on substrates and thin films in various atmospheres, at temperatures up to 1450 K. A laser is used as the light source. The light flux exiting from a rotating analyzer is measured at 512 equally spaced intervals, to yield a flux ellipse that is used for further analysis. Data acquisition and data reduction are under control of an IBM System/7 computer. Ab initio calibration of the optical components using a fixed angle of incidence is possible; the cell windows are considered as small-retardation wave plates. Effects of non-ideality of polarizer and analyzer were negligible. Refractive indices of silicon (<i>n</i><sub>SI</sub><sup>*</sup>) and thermally grown silicon dioxide (<i>n</i><sub>SiO</sub><sub>2</sub>) are reported as functions of temperature up to 1350 K.

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