Abstract

The optical constants of the manganese and bismuth constituents, and of the silicon monoxide protective coating of MnBi films have been measured. These values were used to compute the reflectance as a function of film thickness, which were compared with reflectance measurements at 6328 Å made during film deposition.

© 1974 Optical Society of America

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References

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  1. O. N. Tufte and D. Chen, IEEE Spectrum 10(Feb.), 26 (1973).
    [Crossref]
  2. R. E. MacDonald and J. W. Beck, J. Appl. Phys. 40, 1429 (1969).
    [Crossref]
  3. G. Fan and J. H. Griener, J. Appl. Phys. 41, 1401 (1970).
    [Crossref]
  4. R. L. Aagard, T. C. Lee, and D. Chen, Appl. Opt. 11, 2133 (1972).
    [Crossref] [PubMed]
  5. B. Tsujiyama, S. Yoshi, and K. Nishiguchi, IEEE Trans. Magn. 4, 603 (1972).
    [Crossref]
  6. D. Chen, G. N. Otto, and F. M. Schmit, IEEE Trans. Magn. 9, 66 (1973).
    [Crossref]
  7. E. Jager and U. Ropke, Phys. Status Solidi 19, 529 (1973).
    [Crossref]
  8. G. Hass and C. D. Salzberg, J. Opt. Soc. Am. 44, 181 (1954).
    [Crossref]
  9. American Institute of Physics Handbook, Third Edition, edited by D. E. Gray (McGraw–Hill, New York, 1972), pp. 6–128.
  10. H. M. O’Bryan, J. Opt. Soc. Am. 26, 122 (1936).
    [Crossref]
  11. S. Esho, S. Nogucki, Y. Ono, and M. Nagao, Appl. Opt. 13, 779 (1974).
    [Crossref] [PubMed]

1974 (1)

1973 (3)

O. N. Tufte and D. Chen, IEEE Spectrum 10(Feb.), 26 (1973).
[Crossref]

D. Chen, G. N. Otto, and F. M. Schmit, IEEE Trans. Magn. 9, 66 (1973).
[Crossref]

E. Jager and U. Ropke, Phys. Status Solidi 19, 529 (1973).
[Crossref]

1972 (2)

R. L. Aagard, T. C. Lee, and D. Chen, Appl. Opt. 11, 2133 (1972).
[Crossref] [PubMed]

B. Tsujiyama, S. Yoshi, and K. Nishiguchi, IEEE Trans. Magn. 4, 603 (1972).
[Crossref]

1970 (1)

G. Fan and J. H. Griener, J. Appl. Phys. 41, 1401 (1970).
[Crossref]

1969 (1)

R. E. MacDonald and J. W. Beck, J. Appl. Phys. 40, 1429 (1969).
[Crossref]

1954 (1)

1936 (1)

Aagard, R. L.

Beck, J. W.

R. E. MacDonald and J. W. Beck, J. Appl. Phys. 40, 1429 (1969).
[Crossref]

Chen, D.

O. N. Tufte and D. Chen, IEEE Spectrum 10(Feb.), 26 (1973).
[Crossref]

D. Chen, G. N. Otto, and F. M. Schmit, IEEE Trans. Magn. 9, 66 (1973).
[Crossref]

R. L. Aagard, T. C. Lee, and D. Chen, Appl. Opt. 11, 2133 (1972).
[Crossref] [PubMed]

Esho, S.

Fan, G.

G. Fan and J. H. Griener, J. Appl. Phys. 41, 1401 (1970).
[Crossref]

Griener, J. H.

G. Fan and J. H. Griener, J. Appl. Phys. 41, 1401 (1970).
[Crossref]

Hass, G.

Jager, E.

E. Jager and U. Ropke, Phys. Status Solidi 19, 529 (1973).
[Crossref]

Lee, T. C.

MacDonald, R. E.

R. E. MacDonald and J. W. Beck, J. Appl. Phys. 40, 1429 (1969).
[Crossref]

Nagao, M.

Nishiguchi, K.

B. Tsujiyama, S. Yoshi, and K. Nishiguchi, IEEE Trans. Magn. 4, 603 (1972).
[Crossref]

Nogucki, S.

O’Bryan, H. M.

Ono, Y.

Otto, G. N.

D. Chen, G. N. Otto, and F. M. Schmit, IEEE Trans. Magn. 9, 66 (1973).
[Crossref]

Ropke, U.

E. Jager and U. Ropke, Phys. Status Solidi 19, 529 (1973).
[Crossref]

Salzberg, C. D.

Schmit, F. M.

D. Chen, G. N. Otto, and F. M. Schmit, IEEE Trans. Magn. 9, 66 (1973).
[Crossref]

Tsujiyama, B.

B. Tsujiyama, S. Yoshi, and K. Nishiguchi, IEEE Trans. Magn. 4, 603 (1972).
[Crossref]

Tufte, O. N.

O. N. Tufte and D. Chen, IEEE Spectrum 10(Feb.), 26 (1973).
[Crossref]

Yoshi, S.

B. Tsujiyama, S. Yoshi, and K. Nishiguchi, IEEE Trans. Magn. 4, 603 (1972).
[Crossref]

Appl. Opt. (2)

IEEE Spectrum (1)

O. N. Tufte and D. Chen, IEEE Spectrum 10(Feb.), 26 (1973).
[Crossref]

IEEE Trans. Magn. (2)

B. Tsujiyama, S. Yoshi, and K. Nishiguchi, IEEE Trans. Magn. 4, 603 (1972).
[Crossref]

D. Chen, G. N. Otto, and F. M. Schmit, IEEE Trans. Magn. 9, 66 (1973).
[Crossref]

J. Appl. Phys. (2)

R. E. MacDonald and J. W. Beck, J. Appl. Phys. 40, 1429 (1969).
[Crossref]

G. Fan and J. H. Griener, J. Appl. Phys. 41, 1401 (1970).
[Crossref]

J. Opt. Soc. Am. (2)

Phys. Status Solidi (1)

E. Jager and U. Ropke, Phys. Status Solidi 19, 529 (1973).
[Crossref]

Other (1)

American Institute of Physics Handbook, Third Edition, edited by D. E. Gray (McGraw–Hill, New York, 1972), pp. 6–128.

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Figures (6)

FIG. 1
FIG. 1

Diagram of apparatus for vacuum deposition of MnBi films. A source (c) for Mn, Bi, and SiO are located about 0.45 m from the substrate and thickness monitor (b) in a large vacuum chamber (a). Light from laser (f) enters past (e) striking mirror (d) and the substrate at (b) and to detector (g). The output of the detector is displayed on strip-chart recorder (h).

FIG. 2
FIG. 2

Reflectance, transmittance, refractive index, and extinction coefficient for a bismuth film 325 Å thick, as functions of wavelength. The circles are the handbook values for basal-plane bismuth.

FIG. 3
FIG. 3

Reflectance vs thickness for bismuth overcoated with SiO. The vertical line divides the bismuth from the silicon monoxide deposition. The dotted curve is measured and the solid curves are calculated. The upper calculated curve is for basal-plane bismuth and the lower curve is for single-crystal bismuth.

FIG. 4
FIG. 4

Reflectance, transmittance, refractive index, and extinction coefficient for a manganese film 350 Å thick. The circles are handbook values.

FIG. 5
FIG. 5

Reflectance vs thickness of a manganese film. The dotted curve was measured during deposition and the solid curve was calculated. The vertical line divides the manganese and silicon monoxide depositions.

FIG. 6
FIG. 6

Reflectance vs thickness for the three-layer film structure. Vertical lines divide the bismuth, manganese, and silicon monoxide depositions.