The Abelès treatment of refraction in stratified isotropic media is extended to stratified anisotropic media. The present treatment is restricted to linear refraction problems with incident light assumed to be plane waves of infinite extent. A mathematical restriction excludes application to singular cases. Subject to these restrictions, the treatment is quite generally applicable. It is applied to the case of an isotropic semiconductor in an external magnetic field; results agreeing with published experimental data and with an alternative method of calculation for normal incidence are obtained.
© 1970 Optical Society of America
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