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  1. W. L. Goffe and M. P. Givens, J. Opt. Soc. Am. 53, 804 (1963).
    [Crossref]
  2. S. Kandare, Compt. Rend. 244, 571 (1957).
  3. M. P. Givens, Rev. Sci. Instr. 25, 1130 (1954).
    [Crossref]
  4. T. S. Moss, Optical Properties of Semi-conductors (Butterworths Scientific Publications Ltd., London, 1959), p. 159.
  5. H. P. D. Lanyon, Phys. Rev. 130, 134 (1963);H. P. D. Lanyon and W. E. Spear, Proc. Phys. Soc. (London) 76, 1157 (1961).
    [Crossref]

1963 (2)

W. L. Goffe and M. P. Givens, J. Opt. Soc. Am. 53, 804 (1963).
[Crossref]

H. P. D. Lanyon, Phys. Rev. 130, 134 (1963);H. P. D. Lanyon and W. E. Spear, Proc. Phys. Soc. (London) 76, 1157 (1961).
[Crossref]

1957 (1)

S. Kandare, Compt. Rend. 244, 571 (1957).

1954 (1)

M. P. Givens, Rev. Sci. Instr. 25, 1130 (1954).
[Crossref]

Givens, M. P.

Goffe, W. L.

Kandare, S.

S. Kandare, Compt. Rend. 244, 571 (1957).

Lanyon, H. P. D.

H. P. D. Lanyon, Phys. Rev. 130, 134 (1963);H. P. D. Lanyon and W. E. Spear, Proc. Phys. Soc. (London) 76, 1157 (1961).
[Crossref]

Moss, T. S.

T. S. Moss, Optical Properties of Semi-conductors (Butterworths Scientific Publications Ltd., London, 1959), p. 159.

Compt. Rend. (1)

S. Kandare, Compt. Rend. 244, 571 (1957).

J. Opt. Soc. Am. (1)

Phys. Rev. (1)

H. P. D. Lanyon, Phys. Rev. 130, 134 (1963);H. P. D. Lanyon and W. E. Spear, Proc. Phys. Soc. (London) 76, 1157 (1961).
[Crossref]

Rev. Sci. Instr. (1)

M. P. Givens, Rev. Sci. Instr. 25, 1130 (1954).
[Crossref]

Other (1)

T. S. Moss, Optical Properties of Semi-conductors (Butterworths Scientific Publications Ltd., London, 1959), p. 159.

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Figures (4)

F. 1
F. 1

Sketch of the photocell chamber and evaporator.

F. 2
F. 2

Photoelectric yields of amorphous Se (+) and metallic Se (0). The yield means number of emitted photoelectrons per incident photon.

F. 3
F. 3

Curent–voltage curves for amorphous Se and metallic Se under incident radiation of 1727 Å.

F. 4
F. 4

Current–voltage curves for amorphous Se and metallic Se under incident radiation of 1608 Å.