Abstract

<p>Germanium infrared detectors are cut from a large zone leveled crystal. Compensation with antimony donors is used to obtain <i>n</i>-type material. The gold-antimony doped detectors have a long wavelength cutoff at 6 microns and a photoconductive time constant which is dependent on the wavelength of the incident radiation. A table is given which shows the sensitivity characteristics of a number of these detectors. Indium antimonide detectors have been made with sensitivities comparable to those of the gold-doped germanium. The indium antimonide detector is made either by alloying or diffusing a thin layer of impurities into the surface layer of a single crystal of material. Cadmium is presently being used, giving a thin <i>p</i>-type surface on <i>n</i>-type indium antimonide. If light is allowed to fall on the front surface of the alloyed material, a photo-voltage may be measured between the <i>n</i> and <i>p</i> parts of the detector. The cutoff wavelength for this type of detector when cooled to liquid nitrogen temperature also is of the or der of 6 microns.</p><p>A comparison is made between the characteristics of the two types of cells and a description is given of a multiple contact cell which can locate a target as well as detect it. A section is included on the standard measuring techniques used in evaluating infrared detectors.</p>

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