Abstract

A method of constructing an interference filter by combining samples of a layered-structure compound in series is proposed. The use of single crystals of layered-structure compounds has the advantage of perfect crystal surfaces and low absorption coefficients. The possibility of designing an optical filter with predetermined characteristics in any wavelength of the near-infrared region is emphasized. Such a filter shows a relatively high transmittance maximum at the desired wavelength, which depends on the thickness of the samples used, and a controlled half-width. Infrared filters using the layered-structure semiconductor SiTe<sub>2</sub> are described.

© 1983 Optical Society of America

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  1. E. T. Fairchild, "Interference filters for the VUV (1200–1900 Å)," Appl. Opt. 12, 2240–2241 (1973).
  2. A. Malherbe, "Interference filters for the far ultraviolet," Appl. Opt. 13, 1275–1276 (1974).
  3. Optical Society of America, Handbook of Optics (McGraw-Hill, New York, 1975), pp. 8.4–8.11, 8.75–8.76, 8.78–8.80.
  4. A. Malherbe, "Multidielectric components for the far ultraviolet," Appl. Opt. 13, 1276 (1974).
  5. G. S. Evans, R. Hunneman, and J. S. Seeley, "Optical thickness changes in freshly deposited layers of lead telluride," J. Phys. D. 9, 321–329 (1976).
  6. J. P. Laurenti, K. G. Rustagi, and M. Rouzeyre, "Optical filters using coupled light waves in mixed crystals," Appl. Phys. Lett. 213–214 (1976).
  7. A. P. Lambros and N. A. Economou, "The optical properties of silicon ditelluride," Phys. Status Solidi B 57, 793–799 (1973).

1976 (2)

G. S. Evans, R. Hunneman, and J. S. Seeley, "Optical thickness changes in freshly deposited layers of lead telluride," J. Phys. D. 9, 321–329 (1976).

J. P. Laurenti, K. G. Rustagi, and M. Rouzeyre, "Optical filters using coupled light waves in mixed crystals," Appl. Phys. Lett. 213–214 (1976).

1974 (2)

1973 (2)

E. T. Fairchild, "Interference filters for the VUV (1200–1900 Å)," Appl. Opt. 12, 2240–2241 (1973).

A. P. Lambros and N. A. Economou, "The optical properties of silicon ditelluride," Phys. Status Solidi B 57, 793–799 (1973).

Economou, N. A.

A. P. Lambros and N. A. Economou, "The optical properties of silicon ditelluride," Phys. Status Solidi B 57, 793–799 (1973).

Evans, G. S.

G. S. Evans, R. Hunneman, and J. S. Seeley, "Optical thickness changes in freshly deposited layers of lead telluride," J. Phys. D. 9, 321–329 (1976).

Fairchild, E. T.

Hunneman, R.

G. S. Evans, R. Hunneman, and J. S. Seeley, "Optical thickness changes in freshly deposited layers of lead telluride," J. Phys. D. 9, 321–329 (1976).

Lambros, A. P.

A. P. Lambros and N. A. Economou, "The optical properties of silicon ditelluride," Phys. Status Solidi B 57, 793–799 (1973).

Laurenti, J. P.

J. P. Laurenti, K. G. Rustagi, and M. Rouzeyre, "Optical filters using coupled light waves in mixed crystals," Appl. Phys. Lett. 213–214 (1976).

Malherbe, A.

Rouzeyre, M.

J. P. Laurenti, K. G. Rustagi, and M. Rouzeyre, "Optical filters using coupled light waves in mixed crystals," Appl. Phys. Lett. 213–214 (1976).

Rustagi, K. G.

J. P. Laurenti, K. G. Rustagi, and M. Rouzeyre, "Optical filters using coupled light waves in mixed crystals," Appl. Phys. Lett. 213–214 (1976).

Seeley, J. S.

G. S. Evans, R. Hunneman, and J. S. Seeley, "Optical thickness changes in freshly deposited layers of lead telluride," J. Phys. D. 9, 321–329 (1976).

Appl. Opt. (3)

J. Phys. D. (1)

G. S. Evans, R. Hunneman, and J. S. Seeley, "Optical thickness changes in freshly deposited layers of lead telluride," J. Phys. D. 9, 321–329 (1976).

Phys. Status Solidi (1)

A. P. Lambros and N. A. Economou, "The optical properties of silicon ditelluride," Phys. Status Solidi B 57, 793–799 (1973).

Other (2)

J. P. Laurenti, K. G. Rustagi, and M. Rouzeyre, "Optical filters using coupled light waves in mixed crystals," Appl. Phys. Lett. 213–214 (1976).

Optical Society of America, Handbook of Optics (McGraw-Hill, New York, 1975), pp. 8.4–8.11, 8.75–8.76, 8.78–8.80.

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